PD - 9.

1280C

IRF4905
HEXFET Power MOSFET
Advanced Process Technology
Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175C Operating Temperature
l Fast Switching
l P-Channel
l Fully Avalanche Rated
Description
l

VDSS = -55V
RDS(on) = 0.02

ID = -74A

Fifth Generation HEXFETs from International Rectifier

utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.

TO-220AB

Absolute Maximum Ratings

ID @ TC = 25C
ID @ TC = 100C
IDM
PD @TC = 25C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG

Parameter

Max.

Continuous Drain Current, VGS @ -10V

Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw

-74
-52
-260
200
1.3
20
930
-38
20
-5.0
-55 to + 175

Units
A
W
W/C
V
mJ
A
mJ
V/ns
C

300 (1.6mm from case )

10 lbfin (1.1Nm)

Thermal Resistance
Parameter
RJC
RCS
RJA

Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient

Typ.

Max.

Units

0.50

0.75

62

C/W

8/25/97

IRF4905
Electrical Characteristics @ TJ = 25C (unless otherwise specified)

RDS(on)
VGS(th)
gfs

Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance

Qg
Q gs
Q gd
t d(on)
tr
t d(off)
tf

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time

Min.
-55

-2.0
21

Typ.

-0.05

18
99
61
96

IDSS

Drain-to-Source Leakage Current

LD

Internal Drain Inductance

4.5

LS

Internal Source Inductance

7.5

Ciss
Coss
Crss

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

3400
1400
640

V(BR)DSS
V(BR)DSS/TJ

I GSS

Max. Units
Conditions

V
VGS = 0V, ID = -250A
V/C Reference to 25C, I D = -1mA
0.02

VGS = -10V, ID = -38A

-4.0
V
VDS = VGS , ID = -250A

S
VDS = -25V, I D = -38A
-25
VDS = -55V, VGS = 0V
A
-250
VDS = -44V, VGS = 0V, T J = 150C
100
V GS = 20V
nA
-100
VGS = -20V
180
ID = -38A
32
nC VDS = -44V
86
V GS = -10V, See Fig. 6 and 13

VDD = -28V

I D = -38A
ns

RG = 2.5

RD = 0.72, See Fig. 10

Between lead,

6mm (0.25in.)
nH
G
from package

and center of die contact

VGS = 0V

pF
VDS = -25V

= 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

IS
ISM

VSD
t rr
Q rr
t on

Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time

Min. Typ. Max. Units

Conditions
D
MOSFET symbol
-74
showing the
A
G
integral reverse
-260
p-n junction diode.
S
-1.6
V
TJ = 25C, IS = -38A, V GS = 0V
89 130
ns
TJ = 25C, IF = -38A
230 350
C di/dt = -100A/s
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

Repetitive rating; pulse width limited by

max. junction temperature. ( See fig. 11 )

Starting TJ = 25C, L = 1.3mH

RG = 25, IAS = -38A. (See Figure 12)

ISD -38A, di/dt -270A/s, VDD V(BR)DSS ,

TJ 175C

Pulse width 300s; duty cycle 2%.

IRF4905
1000

1000

VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTT OM - 4. 5V

VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTT OM - 4. 5V
TOP

-ID , D ra in -to -S o u rc e C u rre n t (A )

-ID , D ra in -to -S o u rce C u rre n t (A )

TOP

100

10

-4.5 V

2 0 s PU LS E W ID TH
T c = 2 5C
A

1
0.1

10

100

-4.5 V

10

20 s PU LSE W ID TH
TC = 1 75C

100

0.1

-VD S , Drain-to-Source Voltage (V)

R D S (o n ) , D ra in -to -S o u rc e O n R e si sta n ce
(N o rm a li ze d )

-I D , D rain -to- S our ce C urr ent ( A )

2.0

TJ = 2 5 C
100

TJ = 1 7 5 C

10

V DS = -2 5 V
2 0 s P U L S E W ID T H
5

-VG S , Ga te-to-S o urce V oltage (V )

Fig 3. Typical Transfer Characteristics

100

Fig 2. Typical Output Characteristics

1000

10

-VD S , Drain-to-Source V oltage (V )

Fig 1. Typical Output Characteristics

10

I D = -6 4A

1.5

1.0

0.5

VG S = -10 V

0.0
-60

-40 -20

20

40

60

80

100 120 140 160 180

T J , Junction T em perature (C )

Fig 4. Normalized On-Resistance

Vs. Temperature

IRF4905
V GS
C is s
C rs s
C o ss

C , C a p a c ita n c e (p F )

6000

20

= 0 V,
f = 1M H z
= C gs + C gd , Cds SH O RTE D
= C gd
= C ds + C g d

-V G S , G a te -to -S o u rce V o lta g e (V )

7000

5000

C is s
4000

C o ss
3000

2000

C rs s

1000

0
10

VDS = - 44V
VDS = - 28V

16

12

FOR TE ST C IR C U IT
SE E FIG U R E 1 3

A
1

I D = -3 8A

100

-VD S , Drain-to-Source V oltage (V)

80

120

160

200

Q G , Total G ate C harge (nC)

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

1000

1000

OPE R ATIO N IN TH IS A RE A LIMITE D

BY R D S(o n)

-I D , D ra in C u rre n t (A )

-IS D , R e ve rse D ra in C u rre n t (A )

40

100

T J = 17 5C
T J = 25 C
10

VG S = 0 V

1
0.4

0.6

0.8

1.0

1.2

1.4

1.6

-VS D , S ource-to-Drain V oltage (V )

Fig 7. Typical Source-Drain Diode

Forward Voltage

1.8

100
100 s

1m s
10
10m s

T C = 2 5C
T J = 1 75C
Sin gle Pu lse

1
1

A
10

-VD S , Drain-to-Source V oltage (V )

Fig 8. Maximum Safe Operating Area

100

IRF4905
80

RD

VDS

I D , Drain Current (A)

VGS
60

D.U.T.

RG

VDD

-10V
40

Pulse Width 1 s
Duty Factor 0.1 %

Fig 10a. Switching Time Test Circuit

20
td(on)

tr

t d(off)

tf

VGS
10%

0
25

50

75

100

125

TC , Case Temperature

150

175

( C)
90%

Fig 9. Maximum Drain Current Vs.

Case Temperature

VDS

Fig 10b. Switching Time Waveforms

(Z thJC )

D = 0.50

Thermal Response

0.20
0.1

0.10
PDM

0.05

t1
0.02
0.01

0.01
0.00001

t2

SINGLE PULSE
(THERMAL RESPONSE)

0.0001

Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.001

0.01

0.1

t1, Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

IRF4905

D .U .T

RG

IA S
- 20V
tp

VD D
A
D R IV E R

0 .0 1

15V

Fig 12a. Unclamped Inductive Test Circuit

E A S , S in g le P u ls e A va la n c h e E n e rg y (m J)

2500

VDS

TO P
BOT TO M

2000

1500

1000

500

A
25

I AS

ID
-1 6A
- 27A
-38 A

50

75

100

125

150

175

Starting TJ , Junction T emperature (C)

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

tp
V(BR)DSS

Fig 12b. Unclamped Inductive Waveforms

Current Regulator
Same Type as D.U.T.

50K

QG

12V

.3F

-10V
QGS

.2F

QGD

D.U.T.

+VDS

VGS

VG

-3mA

Charge

Fig 13a. Basic Gate Charge Waveform

IG

ID

Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit

IRF4905
Peak Diode Recovery dv/dt Test Circuit
+

D.U.T*

Circuit Layout Considerations

Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer

dv/dt controlled by RG
I SD controlled by Duty Factor "D"
D.U.T. - Device Under Test

RG
VGS

+
-

VDD

Reverse Polarity of D.U.T for P-Channel

Driver Gate Drive

P.W.

Period

D=

P.W.
Period

[VGS=10V ] ***

D.U.T. ISD Waveform

Reverse
Recovery
Current

Body Diode Forward

Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt

Re-Applied
Voltage

Body Diode

[ VDD]

Forward Drop

Inductor Curent
Ripple 5%

*** VGS = 5.0V for Logic Level and 3V Drive Devices

Fig 14. For P-Channel HEXFETS

[ ISD]

IRF4905
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)
2 . 8 7 ( .1 1 3 )
2 . 6 2 ( .1 0 3 )

1 0 . 5 4 (. 4 1 5 )
1 0 . 2 9 (. 4 0 5 )

-B -

3 . 7 8 (. 1 4 9 )
3 . 5 4 (. 1 3 9 )

4 . 6 9 ( .1 8 5 )
4 . 2 0 ( .1 6 5 )

-A -

1 .3 2 (. 0 5 2 )
1 .2 2 (. 0 4 8 )

6 . 4 7 (. 2 5 5 )
6 . 1 0 (. 2 4 0 )

4
1 5 . 2 4 ( .6 0 0 )
1 4 . 8 4 ( .5 8 4 )

1 . 1 5 ( .0 4 5 )
M IN
1

1 4 . 0 9 (.5 5 5 )
1 3 . 4 7 (.5 3 0 )

3X

1 .4 0 (. 0 5 5 )
1 .1 5 (. 0 4 5 )

L E A D A S S IG N M E N T S
1 - G A TE
2 - D R AIN
3 - SO URCE
4 - D R AIN

4 . 0 6 (. 1 6 0 )
3 . 5 5 (. 1 4 0 )

0 . 9 3 ( .0 3 7 )
3 X 0 . 6 9 ( .0 2 7 )
0 .3 6 (. 0 1 4 )

3X
M

B A

2 . 5 4 ( .1 0 0 )
2X
NO TE S :
1 D I M E N S IO N I N G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 .
2 C O N T R O L L I N G D IM E N S IO N : I N C H

0 . 5 5 (. 0 2 2 )
0 . 4 6 (. 0 1 8 )

2 .9 2 (. 1 1 5 )
2 .6 4 (. 1 0 4 )

3 O U T L IN E C O N F O R M S T O J E D E C O U T L I N E T O -2 2 0 A B .
4 H E A T S IN K & L E A D M E A S U R E M E N T S D O N O T IN C L U D E B U R R S .

Part Marking Information

TO-220AB
E XPLE
AM PLE
N 1010
IRF 1010
E X AM
: T:HI TSHIISS AISN AIRF
S ELY
MB LY
W ITWH ITAHS SAESMB
T DE
CO DE
9B 1M
LO TLOCO
9B 1M

INRTE
T ION
IN TE
NARTNA
ION
AL AL
T IF IER
R ECRTEC
IF IER
F 1010
IR F IR
1010
LO GO
LO GO
9246
9246
9B 9B1M 1M
S SBEM
A S SAEM
LYB LY
LO
T
CO DE
LO T CO DE

P A RT
NU
P A RT
NU M
BEMRBE R

D A TE
D A TE
C ODCEOD E
(Y
YW
(Y YW W ) W )
= AYE
Y Y Y=Y YE
R AR
W WW =W W= EW
EKE EK

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Data and specifications subject to change without notice.
8/97