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Ordering number : ENA1218A

MCH5908
N-Channel JFET
15V, 10 to 32mA, 35mS, Dual MCPH5

http://onsemi.com

Features

Composite type with 2 J-FET contained in a MCPH5 package currently in use, improving the mounting
efficiency greatly
The MCH5908 is formed with two chips, being equivalent to the 2SK3557, placed in one package

Specifications
Absolute Maximum Ratings at Ta=25C
Parameter

Symbol

Drain-to-Source Voltage
Gate-to-Drain Voltage

VDSX
VGDS

Gate Current

IG

Drain Current

ID
PD

Allowable Power Dissipation


Junction Temperature

Total Power Dissipation

PT
Tj

Storage Temperature

Tstg

Conditions

Ratings

Unit
15

1 unit

--15

10

mA

50

mA

200

mW

300

mW

150

--55 to +150

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

Package Dimensions

Product & Package Information

unit : mm (typ)
7021A-009

Package
: MCPH5
JEITA, JEDEC
: SC-88A, SC-70-5, SOT-353
Minimum Packing Quantity : 3,000 pcs./reel

0.15

MCH5908H-TL-E
MCH5908G-TL-E

Packing Type : TL

Marking

K NA
R
K

LOT No.

LOT No.

0 to 0.02

2.1
1.6

0.25

2.0

0.25

TL

0.65

0.3

0.07

0.85

Electrical Connection
4

1 : Drain1
2 : Source1/Source2
3 : Drain2
4 : Gate2
5 : Gate1

MCPH5

Semiconductor Components Industries, LLC, 2013


August, 2013

91212 TKIM/22410AC TKIM TC-00002292 No. A1218-1/6

MCH5908
Electrical Characteristics at Ta=25C
Parameter

Symbol

Gate-to-Drain Breakdown Voltage

V(BR)GDS
IGSS
VGS(off)

Gate-to-Source Leakage Current


Cutoff Voltage
Zero-Gate Voltage Drain Current
Forward Transfer Admittance

IDSS
| yfs |

Input Capacitance

Ciss

Reverse Transfer Capacitance

Crss

Noise Figure

NF

Ratings

Conditions

min

IG=--10A, VDS=0V
VGS=--10V, VDS=0V

typ

Unit

max

--15

V
--1.0

VDS=5V, ID=100A

--0.3

VDS=5V, VGS=0V

--0.7

10.0*

VDS=5V, VGS=0V, f=1kHz

24

VDS=5V, VGS=0V, f=1MHz


VDS=5V, Rg=1k, ID=1mA, f=1kHz

nA

--1.5

32.0*

mA

35

mS

10.5

pF

3.5

pF

1.0

dB

The specifications shown above are for each individual J-FET.


* : The MCH5908 is classified by IDSS as follows (unit : mA).
Rank

IDSS

10 to 20

16 to 32

Ordering Information
Package

Shipping

MCH5908H-TL-E

Device

MCPH5

3,000pcs./reel

MCH5908G-TL-E

MCPH5

3,000pcs./reel

ID -- VDS

20

memo
Pb Free

ID -- VDS

20

VGS=0V
16

V
V GS=0

12

Drain Current, ID -- mA

Drain Current, ID -- mA

16

--0.1V
--0.2V

--0.3V
4

--0.3V

--0.4V
--0.5V
--0.6V

--0.7V
0

0.4

0.8

1.2

1.6

2.0

Drain-to-Source Voltage, VDS -- V

20

--0.5V

--0.6V

22

--0.2V

--0.4V
--0.7V

--0.1V
12

2.4

10

Drain-to-Source Voltage, VDS -- V

ITR02749

ID -- VGS

16

VDS=5V

14

12
ITR02750

ID -- VGS

VDS=5V
IDSS=15mA

8
6
4

75
C

10

--2
5C

10

20
m
15 A
mA
10
mA

0m

12

Ta
=

14

12

25
C

Drain Current, ID -- mA

16

ID
SS =
3

Drain Current, ID -- mA

18

4
2
2
0
--1.4

--1.2

--1.0

--0.8

--0.6

--0.4

--0.2

Gate-to-Source Voltage, VGS -- V

0.2
IT04224

0
--1.2

--1.0

--0.8

--0.6

--0.4

--0.2

Gate-to-Source Voltage, VGS -- V

0.2

ITR02752

No. A1218-2/6

MCH5908
yfs -- ID

30m
3

=
I DSS

yfs -- IDSS

100

VDS=5V
f=1kHz

Forward Transfer Admittance, yfs -- mS

Forward Transfer Admittance, yfs -- mS

A
15m

10
7
5

3
2

VDS=5V
VGS=0V
f=1kHz

10
3

1.0

10

Drain Current, ID -- mA

VGS(off) -- IDSS

Drain Current, IDSS -- mA

IT04226

10

IT04225

Ciss -- VDS

VGS=0V
f=1MHz

Input Capacitance, Ciss -- pF

Cutoff Voltage, VGS(off) -- V

VDS=5V
ID=100A

1.0

3
7

Drain Current, IDSS -- mA

IT04227

10

10

Drain-to-Source Voltage, VDS -- V

VDS=5V
ID=1mA
Rg=1k

Noise Figure, NF -- dB

8
5

IT13691

NF -- f

10

10

Drain-to-Source Voltage, VDS -- V

VDS=5V
ID=1mA
f=1kHz

2 3

5 7 1.0

2 3

5 7 10

2 3

5 7 100

Signal Source Resistance, Rg -- k

2 3

5 7 0.1

2 3

5 71000
ITR02759

2 3

5 7 1.0

2 3

5 7 10

Frequency, f -- kHz

IT13692

NF -- Rg

10

0
0.1

0
0.01

300

2 3

5 7100
ITR02758

PT, PD -- Ta

350

Allowable Power Dissipation, PT, PD -- mW

Reverse Transfer Capacitance, Crss -- pF

VGS=0V
f=1MHz

1.0
1.0

Noise Figure, NF -- dB

10

3
1.0

Crss -- VDS

10

PT Total power dissipation

250

200

PD 1unit

150

100

50
0
0

20

40

60

80

100

120

Ambient Temperature, Ta -- C

140

160

IT15408

No. A1218-3/6

MCH5908
Taping Specification

MCH5908H-TL-E, MCH5908G-TL-E

No. A1218-4/6

MCH5908
Outline Drawing
MCH5908H-TL-E, MCH5908G-TL-E

Land Pattern Example


Mass (g) Unit
0.008 mm
* For reference

Unit: mm

2.1

0.6

0.4

0.65 0.65

No. A1218-5/6

MCH5908

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of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLCs product/patent coverage may be accessed at
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application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical
experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use
as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in
which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for
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PS No. A1218-6/6

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