IHP10T120

Soft Switching Series

Low Loss DuoPack : IGBT in Trench and Fieldstop technology

with soft, fast recovery anti-parallel EmCon HE diode

Short circuit withstand time 10s

Designed for :
- Soft Switching Applications
- Induction Heating
Trench and Fieldstop technology for 1200 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- easy parallel switching capability due to positive
temperature coefficient in VCE(sat)
- Very low Vce(sat)
Very soft, fast recovery anti-parallel EmCon HE diode
Low EMI
Application specific optimisation of inverse diode

Type
IHW10T120

P-TO-220-3-1
(TO-220AB)

VCE

IC

VCE(sat),Tj=25C

Tj,max

Marking

Package

Ordering Code

1200V

10A

1.7V

150C

H10T120

TO-220-3-1

Q67040-S4650

Maximum Ratings
Parameter

Symbol

Value

Unit

Collector-emitter voltage

VCE

1200

DC collector current

IC

TC = 25C

16

TC = 100C

10

Pulsed collector current, tp limited by Tjmax

ICpuls

24

Turn off safe operating area

24

VCE 1200V, Tj 150C

Diode forward current

IF

TC = 25C

11

TC = 100C

Diode pulsed current, tp limited by Tjmax, Tc = 25C

IFpuls

Diode surge non repetitive current, tp limited by Tjmax

IFSM

16.5
A

TC = 25C, tp = 10ms, sine halfwave

28

TC = 25C, tp 2.5s, sine halfwave

50

TC = 100C, tp 2.5s, sine halfwave

40
VGE

20

tSC

10

Power dissipation, TC = 25C

Ptot

138

Operating junction temperature

Tj

-40...+150

Storage temperature

Tstg

-55...+150

Soldering temperature, 1.6mm (0.063 in.) from case for 10s

Gate-emitter voltage
Short circuit withstand time

1)

VGE = 15V, VCC 1200V, Tj 150C

1)

260

Allowed number of short circuits: <1000; time between short circuits: >1s.

Power Semiconductors

Rev. 2 Apr-04

IHP10T120
Soft Switching Series
Thermal Resistance
Parameter

Symbol

Conditions

Max. Value

Unit

RthJC

0.9

K/W

RthJCD

2.6

RthJA

62

Characteristic
IGBT thermal resistance,
junction case
Diode thermal resistance,
junction case
IGBT thermal resistance,
junction ambient
Electrical Characteristic, at Tj = 25 C, unless otherwise specified
Parameter

Symbol

Conditions

Value
min.

typ.

max.

1200

T j = 25 C

1.7

2.2

T j = 12 5 C

2.0

T j = 15 0 C

2.2

T j = 25 C

1.65

2.15

T j = 15 0 C

1.7

5.0

5.8

6.5

Unit

Static Characteristic
Collector-emitter breakdown voltage

V ( B R ) C E S V G E = 0V, I C = 0. 5mA

Collector-emitter saturation voltage

VCE(sat)

Diode forward voltage

Gate-emitter threshold voltage

Zero gate voltage collector current

VF

V G E = 15V, I C = 10A

V G E = 0V, I F = 4A

VGE(th)

I C = 0. 6mA, V C E = V G E

ICES

V C E = 1200V ,
V G E = 0V

mA

T j = 25 C

0.2

T j = 15 0 C

2.0

Gate-emitter leakage current

IGES

V C E = 0V ,V G E = 2 0V

100

nA

Transconductance

gfs

V C E = 20V, I C = 10A

10

Integrated gate resistor

RGint

Power Semiconductors

none

Rev. 2 Apr-04

IHP10T120
Soft Switching Series
Dynamic Characteristic
pF

Input capacitance

Ciss

V C E = 25V,

606

Output capacitance

Coss

V G E = 0V,

48

Reverse transfer capacitance

Crss

f= 1 M Hz

29

Gate charge

QGate

V C C = 9 60V, I C = 10A

53

nC

Internal emitter inductance

LE

13

nH

48

V G E = 1 5V
measured 5mm (0.197 in.) from case
Short circuit collector current1)

IC(SC)

V G E = 1 5V,t S C 10s
V C C = 600V,
T j = 25 C

Switching Characteristic, Inductive Load, at Tj=25 C

Parameter

Symbol

Conditions

Value
min.

typ.

max.

Unit

IGBT Characteristic
Turn-on delay time

td(on)

Rise time

tr

Turn-off delay time

td(off)

Fall time

tf

Turn-on energy

Eon

Turn-off energy

Eoff

Total switching energy

45

20

520

82

ns

0.68

0.78

Ets

T j = 25 C,
V C C = 6 10V, I C = 10A,
V G E = 0/ 15V,
R G = 8 1 ,
L 2 ) = 180nH,
2)
C =39pF
Energy losses include
tail and diode
reverse recovery.

1.46

Diode reverse recovery time

trr

T j = 25 C,

115

Diode reverse recovery charge

Qrr

V R = 8 00V, I F = 4A,

330

nC

Diode peak reverse recovery current

Irrm

di F / dt = 75 0A / s

7.15

mJ

Anti-Parallel Diode Characteristic

1)
2)

ns

Allowed number of short circuits: <1000; time between short circuits: >1s.
Leakage inductance L and Stray capacity C due to dynamic test circuit in Figure E.

Power Semiconductors

Rev. 2 Apr-04

IHP10T120
Soft Switching Series
Switching Characteristic, Inductive Load, at Tj=150 C
Parameter

Symbol

Conditions

Value
min.

typ.

max.

45

24

592

177

0.83

Unit

IGBT Characteristic
Turn-on delay time

td(on)

Rise time

tr

Turn-off delay time

td(off)

Fall time

tf

Turn-on energy

Eon

Turn-off energy

Eoff

Total switching energy

ns

1.19

Ets

T j = 15 0 C,
V C C = 6 10V, I C = 10A,
V G E = 0 / 15V,
R G = 81
L 1 ) = 180nH,
C 1 ) =39pF
Energy losses include
tail and diode
reverse recovery.

2.02

Diode reverse recovery time

trr

T j = 15 0 C

185

ns

Diode reverse recovery charge

Qrr

V R = 8 00V, I F = 4A,

630

nC

Diode peak reverse recovery current

Irrm

di F / dt = 75 0A / s

8.1

mJ

Anti-Parallel Diode Characteristic

1)

Leakage inductance L and Stray capacity C due to dynamic test circuit in Figure E.

Power Semiconductors

Rev. 2 Apr-04

IHP10T120
Soft Switching Series

tp=2s

15A

T C =80C

10A

T C =110C

Ic
5A

Ic
0A
100Hz

10s

10A

IC, COLLECTOR CURRENT

IC, COLLECTOR CURRENT

20A

50s
1A

200s
500s
2ms
DC

0,1A

1kH z

10kHz

100kHz

1V

10V

100V

1000V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 2. Safe operating area
(D = 0, TC = 25C,
Tj 150C;VGE=15V)

f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(Tj 150C, D = 0.5, VCE = 600V,
VGE = 0/+15V, RG = 81)

25A

140W
120W
100W

IC, COLLECTOR CURRENT

Ptot, DISSIPATED POWER

20A

80W
60W
40W

15A

10A

5A

20W
0W
25C

50C

75C

100C

0A
25C

125C

TC, CASE TEMPERATURE

Figure 3. Power dissipation as a function
of case temperature
(Tj 150C)

Power Semiconductors

75C

125C

TC, CASE TEMPERATURE

Figure 4. Collector current as a function of
case temperature
(VGE 15V, Tj 150C)

Rev. 2 Apr-04

IHP10T120
Soft Switching Series

20A
VGE=17V

IC, COLLECTOR CURRENT

IC, COLLECTOR CURRENT

20A

15V
15A

13V
11V
9V

10A

7V
5A

0A
1V

2V

3V

4V

5V

13V
11V
9V

10A

7V
5A

6V

0V

20A

15A

10A

5A
TJ=150C
25C
0V

2V

4V

6V

8V

10V

12V

2V

3V

4V

5V

6V

3,0V

IC=15A

2,5V
2,0V

IC=8A

1,5V

IC=5A
IC=2.5A

1,0V
0,5V
0,0V
-50C

0C

50C

100C

TJ, JUNCTION TEMPERATURE

Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(VGE = 15V)

VGE, GATE-EMITTER VOLTAGE

Figure 7. Typical transfer characteristic
(VCE=20V)

Power Semiconductors

1V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 6. Typical output characteristic
(Tj = 150C)

VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 5. Typical output characteristic
(Tj = 25C)

IC, COLLECTOR CURRENT

15V
15A

0A
0V

0A

VGE=17V

Rev. 2 Apr-04

IHP10T120
Soft Switching Series

td(off)

td(off)

tf

t, SWITCHING TIMES

t, SWITCHING TIMES

tf
100ns

td(on)
10ns

tr

1ns

5A

10A

100ns
tf
td(on)
tr

50C

100C

150C

TJ, JUNCTION TEMPERATURE

Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE=600V, VGE=0/15V, IC=8A,
RG=81,
Dynamic test circuit in Figure E)

Power Semiconductors

50

100

150

200

RG, GATE RESISTOR

Figure 10. Typical switching times as a
function of gate resistor
(inductive load, TJ=150C, VCE=600V,
VGE=0/15V, IC=8A,
Dynamic test circuit in Figure E)

VGE(th), GATE-EMITT TRSHOLD VOLTAGE

t, SWITCHING TIMES

10 ns

1 ns

15A

td(off)

0C

td(on)

tr

IC, COLLECTOR CURRENT

Figure 9. Typical switching times as a
function of collector current
(inductive load, TJ=150C, VCE=600V,
VGE=0/15V, RG=81,
Dynamic test circuit in Figure E)

10ns

100 ns

7V
6V
max.

5V

typ.
4V
min.
3V
2V
1V
0V
-50C

0C

50C

100C

150C

TJ, JUNCTION TEMPERATURE

Figure 12. Gate-emitter threshold voltage
as a function of junction temperature
(IC = 0.3mA)

Rev. 2 Apr-04

IHP10T120
Soft Switching Series

Ets*

6,0mJ

4,0mJ
Eon*
2,0mJ

Eoff

*) Eon and Ets include losses

due to diode recovery

3,2 mJ

E, SWITCHING ENERGY LOSSES

E, SWITCHING ENERGY LOSSES

*) Eon and Etsinclude losses

due to diode recovery

Ets*

2,8 mJ
2,4 mJ
2,0 mJ

Eoff

1,6 mJ

Eon*

1,2 mJ
0,8 mJ
0,4 mJ

0,0mJ

5A

10A

0,0 mJ

15A

IC, COLLECTOR CURRENT

Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, TJ=150C, VCE=600V,
VGE=0/15V, RG=81,
Dynamic test circuit in Figure E)

*) Eon and E ts include losses

due to diode recovery

1,5mJ

E off
E on*

1,0mJ

0,5mJ

100

150

200

*) Eon and Ets include losses

due to diode recovery

E, SWITCHING ENERGY LOSSES

E, SWITCHING ENERGY LOSSES

2,0mJ

50

RG, GATE RESISTOR

Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, TJ=150C, VCE=600V,
VGE=0/15V, IC=8A,
Dynamic test circuit in Figure E)

E ts*

2,5mJ

3mJ

2mJ
Ets*

1mJ Eoff
Eon*

0,0mJ
50C

100C

0mJ
400V

150C

500V

600V

700V

800V

TJ, JUNCTION TEMPERATURE

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 15. Typical switching energy losses

as a function of junction temperature
(inductive load, VCE=600V, VGE=0/15V, IC=8A,
RG=81,
Dynamic test circuit in Figure E)

Figure 16. Typical switching energy losses

as a function of collector emitter voltage
(inductive load, TJ=150C, VGE=0/15V, IC=8A,
RG=81,
Dynamic test circuit in Figure E)

Power Semiconductors

Rev. 2 Apr-04

IHP10T120
Soft Switching Series

1nF

15V

240V

c, CAPACITANCE

VGE, GATE-EMITTER VOLTAGE

Ciss

960V

10V

100pF

Coss

5V

Crss

0V

0nC

25nC

10pF 0V

50nC

IC(sc), short circuit COLLECTOR CURRENT

15s

10s

5s

0s

12V

14V

75A

50A

25A

0A

16V

VGE, GATE-EMITTETR VOLTAGE

Figure 19. Short circuit withstand time as a
function of gate-emitter voltage
(VCE=600V, start at TJ=25C)

Power Semiconductors

20V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 18. Typical capacitance as a
function of collector-emitter voltage
(VGE=0V, f = 1 MHz)

tSC,

SHORT CIRCUIT WITHSTAND TIME

QGE, GATE CHARGE

Figure 17. Typical gate charge
(IC=8 A)

10V

12V

14V

16V

18V

VGE, GATE-EMITTETR VOLTAGE

Figure 20. Typical short circuit collector
current as a function of gate-emitter
voltage
(VCE 600V, Tj 150C)

Rev. 2 Apr-04

IHP10T120
Soft Switching Series

D=0.5

D=0.5

ZthJC, TRANSIENT THERMAL RESISTANCE

ZthJC, TRANSIENT THERMAL RESISTANCE

10 K/W

0.2
R,(K/W)
0.1759
0.3291
0.2886
0.1189

0.1
-1

10 K/W

0.05

, (s)
-2
8.688*10
-2
1.708*10
-3
1.259*10
-4
1.898*10

R1

R2

0.02
C1= 1/R1

0.01

C2= 2/R2

single pulse

-2

10 K/W
10s

100s

1ms

10 K/W
0.2
0.1

0.05

-1

10 K/W

, (s)
-2
4.529*10
-3
6.595*10
-3
1.003*10
-5
9.423*10

R,(K/W)
0.500
0.578
1.036
0.4046

0.02

R1

0.01
single pulse

R2

C1= 1/R1

C2= 2/R2

-2

10ms

10 K/W
10s

100ms

tP, PULSE WIDTH

Figure 23. IGBT transient thermal
resistance as a function of pulse width
(D = tp / T)

100s

1ms

10ms

100ms

tP, PULSE WIDTH

Figure 24. Diode transient thermal
impedance as a function of pulse width
(D=tP/T)

850nC
500ns

I F =8A

800nC I F =8A

400ns
350ns

Qrr, REVERSE RECOVERY CHARGE

trr, REVERSE RECOVERY TIME

450ns
4A

2A

300ns
250ns
200ns
150ns
100ns
50ns
0A/s

400A/s

800A/s

1200A/

diF/dt, DIODE CURRENT SLOPE

Figure 23. Typical reverse recovery time as
a function of diode current slope
(VR=600V, IF=8A,
Dynamic test circuit in Figure E)

Power Semiconductors

10

750nC
700nC
650nC
600nC

4A

550nC
500nC
450nC
400nC
0A/s

2A

400A/s

800A/s

1200A/

diF/dt, DIODE CURRENT SLOPE

Figure 24. Typical reverse recovery charge
as a function of diode current slope
(VR=800V, TJ = 125C,
Dynamic test circuit in Figure E)

Rev. 2 Apr-04

IHP10T120
Soft Switching Series
20
I F =8A

15

S, SOFTNESSFACTOR

10
I F =8A
4A

2A

4A

2A

10

Irr,

REVERSE RECOVERY CURRENT

12

4
0A/s

400A/s

800A/s

0
0A/s

1200A/

diF/dt, DIODE CURRENT SLOPE

Figure 25. Typical reverse recovery current
as a function of diode current slope
(VR=800V, TJ = 125C,
Dynamic test circuit in Figure E)

400A/s

800A/s

1200A

diF/dt, DIODE CURRENT SLOPE

Figure 26. Typical reverse recovery
softness factor as a function of diode
current slope
(VR=800V, TJ = 125C,
Dynamic test circuit in Figure E)
2,4V
I F =8A

12A

T J =25C

4A

10A

150C

VF, FORWARD VOLTAGE

IF, FORWARD CURRENT

2,0V

8A
6A
4A
2A

1,6V

2A

1,2V

0,8V

0,4V

0A

0,0V
0V

1V

2V

VF, FORWARD VOLTAGE

Figure 27. Typical diode forward current as
a function of forward voltage

Power Semiconductors

-50C

0C

50C

100C

150C

3V

11

TJ, JUNCTION TEMPERATURE

Figure 28. Typical diode forward voltage
as a function of junction temperature

Rev. 2 Apr-04

IHP10T120
Soft Switching Series

TO-220AB

dimensions

[mm]

symbol

min

max

min

max

9.70

10.30

0.3819

0.4055

14.88

15.95

0.5858

0.6280

0.65

0.86

0.0256

0.0339

3.55

3.89

0.1398

0.1531

2.60

3.00

0.1024

0.1181

6.00

6.80

0.2362

0.2677

13.00

14.00

0.5118

0.5512

4.35

4.75

0.1713

0.1870

0.38

0.65

0.0150

0.0256

0.95

1.32

0.0374

0.0520

Power Semiconductors

12

[inch]

2.54 typ.

0.1 typ.

4.30

4.50

0.1693

0.1772

1.17

1.40

0.0461

0.0551

2.30

2.72

0.0906

0.1071

Rev. 2 Apr-04

IHP10T120
Soft Switching Series
i,v
tr r =tS +tF

diF /dt

Qr r =QS +QF
tr r
IF

tS
QS

Ir r m

tF

QF

10% Ir r m

dir r /dt
90% Ir r m

t
VR

Figure C. Definition of diodes

switching characteristics
1

r1

r2

rn

Tj (t)
p(t)

r1

r2

rn

Figure A. Definition of switching times

TC

Figure D. Thermal equivalent

circuit

Figure E. Dynamic test circuit

Leakage inductance L =180nH
and Stray capacity C =39pF.

Figure B. Definition of switching losses

Power Semiconductors

13

Rev. 2 Apr-04

IHP10T120
Soft Switching Series

Published by
Infineon Technologies AG,
Bereich Kommunikation
St.-Martin-Strasse 53,
D-81541 Mnchen
Infineon Technologies AG 2001
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits,
descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of
that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or
systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect
human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

Power Semiconductors

14

Rev. 2 Apr-04