TIP110 / TIP111 / TIP112

NPN Epitaxial Silicon Darlington Transistor

Equivalent Circuit

Features

Monolithic Construction with Built-in Base-Emitter

Shunt Resistors
Complementary to TIP115 / TIP116 / TIP117
High DC Current Gain:
hFE = 1000 @ VCE = 4 V, IC = 1 A (Minimum)
Low Collector-Emitter Saturation Voltage
Industrial Use

TO-220
R1

1.Base

2.Collector

3.Emitter

R2

R1 10k
R2 0.6k

Ordering Information
Part Number

Top Mark

Package

Packing Method

TIP110

TIP110

TO-220 3L (Single Gauge)

Bulk

TIP110TU

TIP110

TO-220 3L (Single Gauge)

Rail

TIP111TU

TIP111

TO-220 3L (Single Gauge)

Rail

TIP112

TIP112

TO-220 3L (Single Gauge)

Bulk

TIP112TU

TIP112

TO-220 3L (Single Gauge)

Rail

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TC = 25C unless otherwise noted.

Symbol

Parameter

Value
TIP110

VCBO

VCEO

Collector-Base Voltage

Collector-Emitter Voltage

Unit

60

TIP111

80

TIP112

100

TIP110

60

TIP111

80

TIP112

100

VEBO

Emitter-Base Voltage

V
V

IC

Collector Current (DC)

ICP

Collector Current (Pulse)

IB

Base Current (DC)

50

mA

TJ

Junction Temperature

150

-65 to 150

TSTG

Storage Temperature Range

2001 Fairchild Semiconductor Corporation

TIP110 / TIP111 / TIP112 Rev. 1.1.0

www.fairchildsemi.com

TIP110 / TIP111 / TIP112 NPN Epitaxial Silicon Darlington Transistor

November 2014

Values are at TC = 25C unless otherwise noted.

Symbol
PC

Parameter

Value

Collector Dissipation (TA = 25C)

Collector Dissipation (TC = 25C)

50

Unit
W

Electrical Characteristics(1)
Values are at TC = 25C unless otherwise noted.

Symbol

Parameter

Conditions
TIP110

VCEO(sus)

Collector-Emitter Sustaining
Voltage

ICBO

Collector Cut-Off Current

Collector Cut-Off Current

IEBO

Emitter Cut-Off Current

hFE

DC Current Gain

Max.

Unit

60

TIP111

IC = 30 mA, IB = 0

TIP112
ICEO

Min.
80

100

TIP110

VCE = 30 V, IB = 0

TIP111

VCE = 40 V, IB = 0

TIP112

VCE = 50 V, IB = 0

TIP110

VCB = 60 V, IE = 0

TIP111

VCB = 80 V, IE = 0

TIP112

VCB = 100 V, IE = 0

VEB = 5 V, IC = 0

mA

IC = 2 A, IB = 8 mA

2.5

VCE = 4 V, IC = 1 A

1000

VCE = 4 V, IC = 2 A

500

mA

mA

VCE(sat)

Collector-Emitter Saturation Voltage

VBE(on)

Base-Emitter On Voltage

VCE = 4 V, IC = 2 A

2.8

Output Capacitance

VCB = 10 V, IE = 0,
f = 0.1 MHz

100

pF

Cob

Note:
1. Pulse test: pw 300 s, duty cycle 2%.

2001 Fairchild Semiconductor Corporation

TIP110 / TIP111 / TIP112 Rev. 1.1.0

www.fairchildsemi.com
2

TIP110 / TIP111 / TIP112 NPN Epitaxial Silicon Darlington Transistor

Thermal Characteristics

10000

IB = 500A

1.8

IB = 450A

1.6

IB = 400A

A
350
I B=

00A
IB = 3

VCE = 4V

0A
I B = 25

hFE, DC CURRENT GAIN

IC[A], COLLECTOR CURRENT

2.0

1.4
1.2

IB = 200A

1.0
0.8
0.6

IB = 150A

0.4

1000

100

0.2
10
0.01

0.0
0

0.1

VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 1. Static Characteristic

10

Figure 2. DC Current Gain

1000

100

IC = 500 IB

f = 0.1 MHz

Cob[pF], CAPACITANCE

VBE(sat), VCE(sat)[V], SATURATION VOLTAGE

IC[A], COLLECTOR CURRENT

10

VBE(sat)
1

VCE(sat)

0.1
0.01

0.1

100

10

1
0.01

10

IC[A], COLLECTOR CURRENT

0.1

10

100

VCB[V], COLLECTOR-BASE VOLTAGE

Figure 3. Base-Emitter Saturation Voltage and

Collector-Emitter Saturation Voltage

Figure 4. Collector Output Capacitance

80

10

PC[W], POWER DISSIPATION

1mS

5mS

IC[A], COLLECTOR CURRENT

70

DC
1

TIP 110
TIP 111
TIP 112

0.1
1

10

50
40
30
20
10
0
0

100

VCE[V], COLLECTOR-EMITTER VOLTAGE

25

50

75

100

125

150

175

TC[ C], CASE TEMPERATURE

Figure 5. Safe Operating Area

2001 Fairchild Semiconductor Corporation

TIP110 / TIP111 / TIP112 Rev. 1.1.0

60

Figure 6. Power Derating

www.fairchildsemi.com
3

TIP110 / TIP111 / TIP112 NPN Epitaxial Silicon Darlington Transistor

Typical Performance Characteristics

TIP110 / TIP111 / TIP112 NPN Epitaxial Silicon Darlington Transistor

Physical Dimensions

Figure 7. TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB

2001 Fairchild Semiconductor Corporation

TIP110 / TIP111 / TIP112 Rev. 1.1.0

www.fairchildsemi.com
4

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