8/7/2016

IR5

vlsitechnology.org/IRdrop/2Wcorepower

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ExampleCalculationofPowerStrapWidthwith6LM,
DifferentResistivitiesandWidths,2WCorePower

IRDrop

Horizontalpowerstrapsarehalfthewidth(ortwicethe

DesignAttribute

Value

Powerdelivery

pitch)ofverticalonesmetalresistivitiesaredifferentcore
powerconsumptionis2Wwith32coreVddand32core
Vsspads.

PNOM

corepowerconsumption

2W

chipillustration

Step1:Calculate Ipadand Vcore:

ps

fractionofmetal1inthestandardcellsusedforpower
supplies

22%(for
vsclib)

1Wcorepower

PNOM
Ipad= Vdd Npad

r1

resistivityofmetallayer1inohmspersquare

0.09persq.

r25

resistivityofmetallayers25inohmspersquare

0.07persq.

r6

resistivityofmetallayer6inohmspersquare

0.02persq.

ka1,3,5

userdefined metallayers1,3,5allocatedtopower
ratioof
metal2allocatedtopower

50%

ka4

userdefined metallayer4allocatedtopower
ratioof
metal2allocatedtopower

100%

ka6

userdefined metallayer6allocatedtopower
ratioof
metal2allocatedtopower

200%

mn

percentageofmetallayer nblockedtopowerstraps

0%

Vdd

thenominalsupplyvoltage

1.2V

IRdropproblem

2Wcorepower

=(1.232)=0.052A

15%powerstraps
1W30%blocks

Vddmin(12Ipad(Rpkg+Rbond+Rpad))
Vcore=
Vdd

2W30%RAM,20%analog

=1.14(120.052(0.025+0.025+0.1) .2
=1.125V

upperpowerstraps
reducingimpact
1Wpowerbest
2Wpowerbest
1Wbest30%blocks
2WbestRAM,analog
summaryofmethod
conclusions
example1
example2

Derivations

Vcorederivation
G(n)derivation
conductivitycalc.
stdcellpowerrails

mnderivation
diesizeimpact

Step2:Calculatethereferencepowersupplyconductance G:
7

4r2
=7(40.07)=25mhos

G=

Step3istosetoutthevaluesof kan, kwn, kcnand mnforeach

metallayer,andusethesetocalculatethevalueof L.

Vddmin theminimumsupplyvoltage,5%lessthannominal

1.14V

Vmin

thedesiredvoltageatthecentreofthedie,10%lessthan
thenominal

1.08V

powermetalallocatedcoefficient

Npad

numberofcore Vddorcore Vsspowerpads

32

kwn

Rpkg

theresistanceofthepackageleadframe

25m

powermetalusedcoefficient

Rbond

theresistanceofthebondwire

25m

kcn

Rpad

theresistanceofthebondpad

100m

metallayer

kan

50% 100% 50% 100% 50% 200%

80% 80% 80% 80% 80% 80%
78% 100% 100% 100% 100% 350%

conductivitycoefficient
mn

r
kcn= 2
rn

0% 0% 0% 0% 0% 0%

coreareablocked
78%=.07/.09350%=.07/.02
Normallywecan'tcalculate Ldirectlybecauseitsvaluedepends
on pwhichwedon'tknow.Butinthiscasewith m16=0wecan

L= kw1kc1(1ps)(1m1(1ka2p)(1ka3p))+
kw2kc2(1m2(1ka2p)(1ka3p))+

kw3kc3(1m3(1ka2p)(1ka3p))+

kw4kc4(1m4(1ka2p)(1ka3p))+

kw5kc5(1m5(1ka2p)(1ka3p))+

kw6kc6(1m6(1ka2p)(1ka3p))

=(0.24+0.8+0.4+0.8+0.4+5.6)
=8.24
Step4:Calculatethepowerstrapallocationpercentage p:

p=
=

VddminPNOM

{(VcoreVmin)Vdd2Gkc1ps} L
1.142

{(1.1251.08)1.22250.780.22}8.24

=(1.4030.173)0.121=14.92%
Asshownontheright,aspreadsheetcanbeusedtoiterateto
theanswer.
Ifthedesignersetsthepowerstrappitch,thenthesupply
allocationforeachmetallayer nispitchkanp andthesupply
widthispitchkwnp .Anexampleisshowninthespreadsheet
ontherightwherewehavechosenaverticalpowerstrappitchof
250m.
Step5:Calculatethenewcoresize.Iftheinitialcoresize
estimatewithoutpowerstrapsis x,thenwithpowerstrapsthe
coresizebecomes x

x=

x
(((1ka2p)
(1ka3p))

= x+12.70%

(0.85080.9254) 0.8873

Thevalue12.7%iscalledtheIRDropAdder.
Thisrepresentsamore"normal"powerbusingscenario(butnot
necessarilyabetterone),whereverticalpowerstrapsare
preferredoverhorizontalones.Theextrauseofmetal6for
powerstrapsmakessense(a)becauseitisalongwayfromthe
transistorsandsotheimpactonroutingdensityshouldbeless
and(b)becauseitisathickmetallayerwithbetterconductivity.
Notethevalueof L=8.24ofwhich5.6comesfrommetal6.

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