FDPF7N50U

FDPF7N50U
N-Channel UniFETTM Ultra FRFETTM MOSFET

500 V, 5 A, 1.5
Features
Description
RDS(on) = 1.5 (Max.) @ VGS = 10 V, ID = 2.5 A
UniFETTM MOSFET is Fairchild Semiconductors high voltage

MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. UniFET Ultra FRFETTM MOSFET has much
superior body diode reverse recovery performance. Its trr is less
than 50nsec and the reverse dv/dt immunity is 20V/nsec while
normal planar MOSFETs have over 200nsec and 4.5V/nsec
respectively. Therefore UniFET Ultra FRFET MOSFET can
remove additional component and improve system reliability in
certain applications that require performance improvement of
the MOSFETs body diode. This device family is suitable for
switching power converter applications such as power factor
correction (PFC), flat panel display (FPD) TV power, ATX and
electronic lamp ballasts.
Low Gate Charge (Typ.12.8 nC)

Low Crss (Typ. 9 pF)
100% Avalanche Tested
Improved dv/dt Capability
Applications
LCD/LED TV
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
G
D
TO-220
TO-220F
Absolute Maximum Ratings

Symbol
Parameter
FDPF7N50U
VDSS
Drain-Source Voltage
ID
Drain Current
- Continuous (TC = 25C)

- Continuous (TC = 100C)
IDM
Drain Current
- Pulsed
Unit
500
5*
3.0 *
A
A
(Note 1)
20 *
30
125
mJ
VGSS
Gate-Source voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
IAR
Avalanche Current
(Note 1)
EAR
Repetitive Avalanche Energy
(Note 1)
8.9
mJ
(Note 3)
dv/dt
Peak Diode Recovery dv/dt
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering Purpose,

1/8 from Case for 5 Seconds
(TC = 25C)
- Derate above 25C
20
V/ns
31.3
0.25
W
W/C
-55 to +150
300
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
Parameter
FDPF7N50U
RJC
Thermal Resistance, Junction-to-Case, Max.
4.0
RJA
Thermal Resistance, Junction-to-Ambient, Max.
62.5
2009 Fairchild Semiconductor Corporation
FDPF7N50U Rev. C0
Unit
C/W
www.fairchildsemi.com
FDPF7N50U N-Channel UniFETTM Ultra FRFETTM MOSFET
March 2013
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FDPF7N50U
FDPF7N50U
TO-220F
--
--
50
Electrical Characteristics
Symbol
TC = 25C unless otherwise noted
Parameter
Conditions
Min.
Typ.
Max
Unit
500
--
--
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250A
BVDSS
TJ
Breakdown Voltage Temperature

Coefficient
ID = 250A, Referenced to 25C
--
0.5
--
V/C
IDSS
Zero Gate Voltage Drain Current
VDS = 500V, VGS = 0V

VDS = 400V, TC = 125C
---
---
25
250
A
A
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30V, VDS = 0V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30V, VDS = 0V
--
--
-100
nA
3.0
--
5.0
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250A
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10V, ID = 2.5A
--
1.2
1.5
gFS
Forward Transconductance
VDS = 40V, ID = 2.5A
--
2.5
--
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25V, VGS = 0V,

f = 1.0MHz
--
720
940
pF
--
95
190
pF
--
13.5
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 250V, ID = 5A
RG = 25
(Note 4)
VDS = 400V, ID = 5A
VGS = 10V
(Note 4)
--
20
ns
--
55
120
ns
--
25
60
ns
--
35
80
ns
--
12.8
16.6
nC
--
3.7
--
nC
--
5.8
--
nC
--
--
Drain-Source Diode Characteristics and Maximum Ratings

IS
Maximum Continuous Drain-Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
20
VSD
Drain-Source Diode Forward Voltage
VGS = 0V, IS = 5A
--
--
1.6
trr
Reverse Recovery Time
40
--
ns
Reverse Recovery Charge
VGS = 0V, IS = 5A
dIF/dt =100A/s
--
Qrr
--
0.04
--
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. IAS = 5A, VDD = 50V, L=10mH, RG = 25, Starting TJ = 25C
3. ISD 5A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C
4. Essentially Independent of Operating Temperature Typical Characteristics
FDPF7N50U Rev. C0
Package Marking and Ordering Information
Figure 1. On-Region Characteristics

20
Figure 2. Transfer Characteristics
VGS
Top :
10.0 V
8.0V
7.5 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
10
ID , Drain Current [A]
ID, Drain Current [A]
15
10
* Notes :
1. 250s Pulse Test
150 C
0
10
25 C
-1
10
2. TC = 25 C
* Note :
1. VDS = 40V
2. 250s Pulse Test
10
20
30
40
-2
50
10
VDS, Drain-Source Voltage [V]
10
Figure 4. Body Diode Forward Voltage

Variation vs. Source Current
and Temperature
IDR , Reverse Drain Current [A]
2.5
2.0
VGS = 10V
1.5
1.0
VGS = 20V
0.5
10
10
150 C
25 C
* Notes :
1. VGS = 0V
2. 250s Pulse Test
* Note : TJ = 25 C
0.0
-1
10
15
10
20
0.2
0.4
0.6
0.8
Figure 5. Capacitance Characteristics
VGS, Gate-Source Voltage [V]
Ciss
Coss
Crss
* Notes :
1. VGS = 0 V
2. f = 1 MHz
10
0
FDPF7N50U Rev. C0
1.8
10
VDS = 250V
10
VDS = 400V
8
2
* Note : ID = 57 A
10
15
QG, Total Gate Charge [nC]
1.6
VDS = 100V
Crss = Cgd
10
1.4
12
Ciss = Cgs + Cgd (Cds = shorted)
100
1.2
Figure 6. Gate Charge Characteristics
Coss = Cds + Cgd
1000
1.0
VSD , Source-Drain Voltage [V]
Capacitance [pF]
VGS , Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs.

Drain Current and Gate Voltage
RDS(ON) [],Drain-Source On-Resistance
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation

vs. Temperature
Figure 8. Maximum Drain Current

Vs. Case Temperature
6
1.1
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
1.0
* Notes :
1. VGS = 0 V
0.9
2. ID = 250 A
0.8
-100
-50
50
100
150
0
25
200
50
75
TJ, Junction Temperature [ C]
100
125
150
TC, Case Temperature [ C]
Figure 9. Maximum Safe Operating Area

- FDPF7N50U
10 us
1
10
100 us
1 ms
10 ms
100 ms
10
Operation in This Area

is Limited by R DS(on)
DC
-1
10
* Notes :
o
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
-2
10
10
10
10
Figure 10. Transient Thermal Response Curve
ZJC(t), Thermal Response
D = 0 .5
10
0 .2
0 .1
0 .0 5
10
PDM
0 .0 2
-1
t1
0 .0 1
* N o te s :
t2
o
1 . Z JC (t) = 4 .0 C /W M a x.
2 . D u ty F a c to r, D = t 1 /t 2
3 . T J M - T C = P D M * Z J C (t)
s in g le p u ls e
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
10
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
FDPF7N50U Rev. C0
Typical Performance Characteristics (Continued)
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDPF7N50U Rev. C0
Peak Diode Recovery dv/dt Test Circuit & Waveforms
FDPF7N50U Rev. C0
Mechanical Dimensions
TO-220M03
Dimensions in Millimeters
FDPF7N50U Rev. C0
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILDS WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:

1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or

system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
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www.Fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
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proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications

may change in any manner without notice.
Definition
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later

date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to

make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild

Semiconductor. The datasheet is for reference information only.
Rev. I64
FDPF7N50U Rev. C0
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
Sync-Lock
FPS
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F-PFS
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*
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PowerTrench
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Global Power Resource
PowerXS
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Build it Now
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Marking Small Speakers Sound Louder Saving our world, 1mW/W/kW at a time
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TriFault Detect
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FDPF7N50U

N-Channel UniFETTM Ultra FRFETTM MOSFET

RDS(on) = 1.5 (Max.) @ VGS = 10 V, ID = 2.5 A

UniFETTM MOSFET is Fairchild Semiconductors high voltage

Low Gate Charge (Typ.12.8 nC)

Absolute Maximum Ratings

- Continuous (TC = 25C)

Single Pulsed Avalanche Energy

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating and Storage Temperature Range

Maximum Lead Temperature for Soldering Purpose,

* Drain current limited by maximum junction temperature.

Thermal Resistance, Junction-to-Case, Max.

Thermal Resistance, Junction-to-Ambient, Max.

2009 Fairchild Semiconductor Corporation

FDPF7N50U N-Channel UniFETTM Ultra FRFETTM MOSFET

TC = 25C unless otherwise noted

Drain-Source Breakdown Voltage

VGS = 0V, ID = 250A

Breakdown Voltage Temperature

ID = 250A, Referenced to 25C

Zero Gate Voltage Drain Current

VDS = 500V, VGS = 0V

Gate-Body Leakage Current, Forward

VGS = 30V, VDS = 0V

Gate-Body Leakage Current, Reverse

VGS = -30V, VDS = 0V

Gate Threshold Voltage

VDS = VGS, ID = 250A

VGS = 10V, ID = 2.5A

VDS = 40V, ID = 2.5A

Reverse Transfer Capacitance

VDS = 25V, VGS = 0V,

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Drain-Source Diode Characteristics and Maximum Ratings

Maximum Continuous Drain-Source Diode Forward Current

Maximum Pulsed Drain-Source Diode Forward Current

Drain-Source Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

2009 Fairchild Semiconductor Corporation

FDPF7N50U N-Channel UniFETTM Ultra FRFETTM MOSFET

Package Marking and Ordering Information

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

ID , Drain Current [A]

ID, Drain Current [A]

VDS, Drain-Source Voltage [V]

Figure 4. Body Diode Forward Voltage

IDR , Reverse Drain Current [A]

Figure 5. Capacitance Characteristics

VGS, Gate-Source Voltage [V]

QG, Total Gate Charge [nC]

VDS, Drain-Source Voltage [V]

2009 Fairchild Semiconductor Corporation

Ciss = Cgs + Cgd (Cds = shorted)

Figure 6. Gate Charge Characteristics

Coss = Cds + Cgd

VSD , Source-Drain Voltage [V]