Ece Topicwise Conventional Sample Book PDF

28-B/7, Jia Sarai, Near IIT, Hauz Khas, New Delhi-110016. Ph. 011-26514888. www.engineersinstitute.
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2013 ENGINEERS INSTITUTE OF INDIA . All Rights Reserved
Page 1 of 19
2013 By Engineers Institute of India

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Engineers Institute of India

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Page 2 of 19
Dedicated to all the Electronics

engineers and future ESE aspirants
Page 3 of 19
Page 4 of 19
A word to the students

Engineering services examination offers one of the most promising and
prestigious careers for service to the nation. Over the past few years, it has
become more competitive as a number of aspirants are increasingly
becoming interested in government jobs due to decline in other career
options.
In my opinion, ESE rigorously tests candidates overall understanding of
concepts, ability to apply their knowledge and personality level by
screening them through various stages. A candidate is supposed to smartly deal with the
syllabus not just mugging up concepts. Thorough understanding with critical analysis of
topics and ability to express clearly are some of the pre-requisites to crack this exam. The
syllabus and questioning pattern has remained pretty much the same over the years.
Established in 2006 by a team of IES and GATE toppers, we at Engineers Institute of India
have consistently provided rigorous classes and proper guidance to engineering students over
the nation in successfully accomplishing their dreams. We believe in providing examoriented teaching methodology with updated study material and test series so that our
students stay ahead in the competition. The faculty at EII are a team of experienced
professionals who have guided thousands to aspirants over the years. They are readily
available before and after classes to assist students and we maintain a healthy student-faculty
ratio. Many current and past years toppers associate with us for contributing towards our
goal of providing quality education and share their success with the future aspirants. Our
results speak for themselves. Past students of EII are currently working in various
departments and PSUs and pursuing higher specializations. We also give scholarships to
meritorious students.
A detailed solution of the past years conventional questions, prepared by toppers, will
be available from January onwards.
R.K. Rajesh
Director
Engineers Institute of India
eii.rkrajesh@gmail.com
Page 5 of 19
TOPPERs VIEWS
Engineering Services examination offers one of the most promising and
fulfilling careers to the engineering graduates.
ESE 2012 was my 2nd attempt. In ESE 2011, I was not able to score
much in Conventional papers and so I gave more priority to
Conventional papers this time.
During my preparation, I realized that ES exam is not easy to crack
particularly due to the subjective (or conventional) papers. The three stages of the exam
checks the aspirant on various grounds like speed, accuracy and in-depth understanding of the
core subjects of the concerned stream, in a very comprehensive way. The interview can be a
little dicey. So I suggest the candidate should score as much as possible in written exams
itself to minimize dependence on the interview. Mostly it is the subjective papers which
affects qualification and if qualified, ones rank. Most candidates are not able to score good
marks in subjective papers because ones speed of answering, style of presentation and
relevance of answers content matter a lot. But attempting all the questions in the
conventional papers is not required. One needs to focus on ones stronger subjects and
prepare in a selective way. Thats why topic-wise selective approach to conventional papers
is required. This book is the first of its kind to give the student an idea of weight-age of
different topics on a year by year basis.
Kunal Srivastava
AIR -1 ESE 2012
AIR -44 GATE 2013
Electronics and Telecommunication Engineering

GS+English Objective 1
117
112
Objective 2
110
Conventional 1
132
Conventional 2
122
Interview
122
Total
715/1200
Page 6 of 19
SYLLABUS
IES Conventional Paper-I (E & T)
1. MATERIALS AND COMPONENTS
Structure and properties of Electrical Engineering materials; Conductors, Semiconductors
and Insulators, magnetic, Ferroelectric, Piezoelectric, Ceramic, Optical and Superconducting materials. Passive components and characteristics Resistors, Capacitors and
Inductors; Ferrites, Quartz crystal Ceramic resonators, Electromagnetic and
Electromechanical components.
2. PHYSICAL ELECTRONICS, ELECTRON DEVICES AND ICs
Electrons and holes in semiconductors, Carrier Statistics, Mechanism of current flow in a
semiconductor, Hall effect; Junction theory; Different types of diodes and their
characteristics; Bipolar Junction transistor; Field effect transistors; Power switching devices
like SCRs, GTOs, power MOSFETS; Basics of ICs - bipolar, MOS and CMOS types; basic of
Opto-Electronics.
3. SIGNALS AND SYSTEMS
Classification of signals and systems: System modelling in terms of differential and
difference equations; State variable representation; Fourier series; Fourier transforms and
their application to system analysis; Laplace transforms and their application to system
analysis; Convolution and superposition integrals and their applications; Z-transforms and
their applications to the analysis and characterisation of discrete time systems; Random
signals and probability, Correlation functions; Spectral density; Response of linear system to
random inputs.
4. NETWORK THEORY
Network analysis techniques; Network theorems, transient response, steady state sinusoidal
response; Network graphs and their applications in network analysis; Tellegens theorem.
Two port networks; Z, Y, h and transmission parameters. Combination of two ports, analysis
of common two ports. Network functions : parts of network functions, obtaining a network
function from a given part. Transmission criteria: delay and rise time, Elmores and other
definitions effect of cascading. Elements of network synthesis.
5. ELECTROMAGNETIC THEORY
Analysis of electrostatic and magnetostatic fields; Laplaces and Poissons equations;
Boundary value problems and their solutions; Maxwells equations; application to wave
propagation in bounded and unbounded media; Transmission lines : basic theory, standing
waves, matching applications, microstrip lines; Basics of wave guides and resonators;
Elements of antenna theory.
6. ELECTRONIC MEASUREMENTS AND INSTRUMENTATION
Basic concepts, standards and error analysis; Measurements of basic electrical quantities
and parameters; Electronic measuring instruments and their principles of working: analog
and digital, comparison, characteristics, application. Transducers; Electronic measurements
of non electrical quantities like temperature, pressure, humidity etc; basics of telemetry for
industrial use.
Page 7 of 19
IES Conventional Paper-II (E & T)

7. ANALOG ELECTRONIC CIRCUITS
Transistor biasing and stabilization. Small signal analysis. Power amplifiers. Frequency
response. Wide banding techniques. Feedback amplifiers. Tuned amplifiers. Oscillators.
Rectifiers and power supplies. Op Amp, PLL, other linear integrated circuits and
applications. Pulse shaping circuits and waveform generators.
8. DIGITAL ELECTRONIC CIRCUITS
Transistor as a switching element; Boolean algebra, simplification of Boolean functions,
Karnaugh map and applications; IC Logic gates and their characteristics; IC logic families :
DTL, TTL, ECL, NMOS, PMOS and CMOS gates and their comparison; Combinational logic
Circuits; Half adder, Full adder; Digital comparator; Multiplexer Demulti-plexer; ROM an their
applications. Flip flops. R-S, J-K, D and T flip-flops; Different types of counters and registers
Waveform generators. A/D and D/A converters. Semiconductor memories.
9. CONTROL SYSTEMS
Transient and steady state response of control systems; Effect of feedback on stability and
sensitivity; Root locus techniques; Frequency response analysis. Concepts of gain and
phase margins: Constant-M and Constant-N Nichols Chart; Approximation of transient
response from Constant-N Nichols Chart; Approximation of transient response from closed
loop frequency response; Design of Control Systems, Compensators; Industrial controllers.
10. COMMUNICATIONS SYSTEMS
Basic information theory; Modulation and detection in analogue and digital systems;
Sampling and data reconstructions; Quantization & coding; Time division and frequency
division multiplexing; Equalization; Optical Communication : in free space & fiber optic;
Propagation of signals at HF, VHF, UHF and microwave frequency; Satellite
Communication.
11. MICROWAVE ENGINEERING
Microwave Tubes and solid state devices, Microwave generation and amplifiers,
Waveguides and other Microwave Components and Circuits, Microstrip circuits, Microwave
Antennas, Microwave Measurements, Masers, lasers; Microwave propagation. Microwave
Communication Systems terrestrial and Satellite based.
12. COMPUTER ENGINEERING
Number Systems. Data representation; Programming; Elements of a high level programming
language PASCAL/C; Use of basic data structures; Fundamentals of computer architecture;
Processor design; Control unit design; Memory organisation, I/o System Organisation.
Microprocessors : Architecture and instruction set of Microprocessors 8085 and 8086,
Assembly language Programming. Microprocessor based system design: typical examples.
Personal computers and their typical uses.
Page 8 of 19
ESE-2012 Objective papers cut-off marks (Out of 600 Marks)

Marks Secured by the LAST candidate for the evaluation of conventional papers.
Branch
Civil
Mechanical
Electrical
Electronics
& Telecom.
General
149
212
232
244
OBC
146
198
209
241
SC
124
169
184
196
ST
105
125
174
194
PH-1
87
72
99
65
PH-2
87
72
99
65
ESE-2012 Interview / Personality Test call cut-off marks (Out of 1000 Marks)
Marks Secured by the LAST written qualified candidate called for Personality Test
Branch
Civil
Mechanical
Electrical
Electronics
& Telecom.
General
342
366
418
465
OBC
296
327
364
436
SC
280
288
329
387
ST
255
235
315
381
PH-1
126
162
211
263
PH-2
126
115
131
119
ESE- 2012 Final recruitment cut-off marks (Out of 1200 Marks)

Branch
Civil
Mechanical
Electrical
Electronics
& Telecom.
General
512
532
590
607
OBC
484
486
542
585
SC
422
416
497
511
ST
422
369
495
512
PH-1
474
361
315
382
PH-2
393
351
289
385
The number of candidates recommended for appointment are:

(i) 269 candidates in Civil Engineering.
(ii) 169 candidates in Mechanical Engineering.
(iii) 103 candidates in Electrical Engineering.
(iv) 94 candidates in Electronics & Telecommunication Engineering.
A total number of 635 candidates recommended for appointments in ESE-2012 lists include 312
General, 183 OBC, 92 SC and 48 ST (including 46 candidates belonging to Physically
Handicapped category).
Page 9 of 19
CONTENT
IES Conventional Paper-I (E & T) ............................................. 1-74
1.
MATERIALS AND COMPONENTS ..................................................... 01- 03
2.
ELECTRONIC DEVICES & CIRCUITS ...............................................
3.
SIGNALS & SYSTEM ........................................................................ 18-28
4.
NETWORK THEORY ......................................................................... 29-49
5.
ELECTROMAGNETIC THEORY ........................................................
6.
MEASUREMENTS AND INSTRUMENTATION ................................... 62-74
04-17
50-61
IES Conventional Paper-II (E & T)........................................ 75-172
7.
ANALOG ELECTRONICS ................................................................. 77-105
8.
COMMUNICATION ENGINEERING .................................................. 106-122
9.
CONTROL SYSTEMS ....................................................................... 123-138
10. DIGITAL ELECTRONICS ................................................................. 139-153
11. MICROWAVE ENGINEERING ........................................................... 154-164
12. COMPUTER ENGINEERING ............................................................. 165-172
Page 10 of 19
ENGINEERING SERVICES EXAMINATION
IES CONVENTIONAL PAPER-I

ELECTRONICS & TELECOMMUNICATION ENGINEERING
(E & T 1992 to 2013)
Page 11 of 19
1. MATERIALS AND COMPONENTS

Papers-1992 to 2013
Paper 1992
A small sphere of polarizability and radius a is placed at a distance r (>> a) from a
conducting sphere of radius b which is maintained at a potential V. Find an expression for the
force on the dielectric sphere.
(8)
1.
Paper 1993
2. (a)
An automotive radar operates at a frequency of 8 GHz. Determine the Doppler shift due to an
automobile directly approaching the radar at a speed of 160 Km per hours. (8)
(b)
Calcium has a face-centered cubic structure with an ionic radius of 1.06 A. Calculate the
inter-planar separation for (111) plane.
(8)
Paper 1997
A quartz crystal has a charge sensitivity of 2pC/N, r = 4.5, diameter of 10 mm and
3.
thickness 2 mm. What is its voltage sensitivity? Find the output voltage due to an applied
force of 100 N.
(Youngs modulus = 9 1010 N/ m 2 )
(8)
Paper 1999
4.
(a)
(b)
(c)
Draw the electrical equivalent circuit of a Quartz Crystal explaining the significance of the
various components of the circuit.
(10)
Draw neat sketches of Impedance Vs Frequency, Reactance Versus Frequency of the Quartz
resonator indicating the critical frequencies and their values.
A quartz crystal has the following electrical characteristics:
Series resonance 200 kHz
Impedance at series resonance 200 ohms
Parallel resonance at 200.25 kHz
Impedance at parallel resonance 40 M
Determine the component values of the equivalent circuit.
(10)
(20)
5. (a)
Paper 2000
What are Optoisolators? Where do they find application? Discuss their propagation delay,
operating voltage range and power dissipation.
(20)
(b)
(c)
With a sketch of characteristics, explain the features of a power MOSFET.

(10)
The reverse recovery time t rr of a diode is 3 s. In a conducting mode to reverse blocking
mode operation. It needs a diode current rate of fall of 30 Amps/ s .
Determine (i) storage charge, Q RR and (ii) peak reverse current, I RR .
(10)
Page 12 of 19
2. ELECTRONIC DEVICES & CIRCUITS

Papers-1992 to 2013
Paper 1992
1.
State the relative merits of bipolar and field effect transistors. A field effect transistor is used
as a simple common source amplifier. The gain of the amplifier is found to be 60 and 45 with
load resistances of 20 k and 60 k respectively. Determine the drain resistance
r
and trans
(17)
conductance of the transistor.
Paper 1993
2.
For a half-wave
wave rectifier circuit, find the required a.c. voltage for getting a d.c. value of 150
V. The source and load resistances are 25 k and 75 k respectively. (8)
3.
By drawing neat diagrams, explain the working of bipolar and field-effect

field effect transistors and
state their relative merits.
(17)
Paper 1994
4. (a)
Consider the circuit of figure. The diode is ideal. The input waveform is as shown. Find the
voltage across
ross the capacitor at 1 ms, 3 ms, 6 ms and 9 ms.
(8)
(b)
A p-type
type material has an acceptor ion concentration of 1 1016 per cm 3 . Its intrinsic carrier
concentration is 1.48 1010 / cm3 . The hole and electron mobilities are 0.05 m 2 / V- s and
0.13 m 2 / V- s respectively. Calculate the resistivity of the materials:

(8)
5.
For the JFET in the circuit of figure.
(17)
I DSS = 5 mA;
Vpo = 3V with usual notations.
Also in this circuit

R D = 2 k ;
R s = 8 k ;
VDD = 15 V;
VG = 10 V;
and
VSS = 8 V.
Calculate VGS and Vo

28-B/7,
B/7, Jia Sarai, Near IIT, Hauz Khas, New Delhi-110016.
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2013 ENGINEERS
S INSTITUTE OF INDIA . All Rights Reserved
Page 13 of 19
6.
A 5.2 V Zener diode has a maximum power dissipation of 260 mW. It maintains a constant
voltage when the current though the diode does not fall below 10% of the maximum
permissible current. A 15 V supply is given to the Zener through a series resistor R. Find the
range for R so that the Zener maintains its constant voltage. Find the new range when the
diode is loaded by 50 load.
7.
A silicon diode showed currents of 2 mA and 10 mA respectively when the diode voltages
were 0.6 V and 0.7 V. Estimate the operating temperature of the diode junction.
(17)
Paper 1995
The parameters of a certain transistor are = 0.99 and I CBO = 100 n A, while I B = 20 A .
8.
The transistor, connected in CE configuration, is in amplifying mode. Find ICEO , I C and I E .

All symbols carry their usual meanings.
9.
Paper 1996
Sketch the output waveform for the circuit of figure. Also draw the variation of energy stored
in the capacitor as a function of time. Mark appropriate values. Take the diode to be ideal.
Page 14 of 19
3. SIGNALS & SYSTEM

Papers-1992 to 2013
Paper 1995
1.
2.
Represent a half sinusoidal pulse g (t ) = sin t , 0 t 1 by an expression involving sine waves

and step functions; and using this representation, write the Laplace transform of the given
pulse.
Paper 1996
Determine the value of k so that all the roots of the following polynomial are to the left of the
line = 0.5.
F( s ) = s 3 + 6s 2 + 11s + k
Paper 1997
3.
(a) The Fourier Transforms of the input and output of a linear time invariant system are
e j
e 2 j
and
respectively. What is its impulse response?
(1 + j)
(1 2 + 2 j)
(8)
(b) Determine the Laplace transform of the periodic function shown in figure
(8)
4.
(a) The complex exponential Fourier series representation of a signal f(t) over the interval (O, T)
is
3
f (t ) =
e jnt
2
n = 4 + ( n )
(i) Determine the numerical value of T.
(ii) One of the components of f (t) is A cos 3t. what is the numerical value of A?
(iii) Find the minimum number of terms which must be retained in the representation in order
to include 99.9% of the energy of f(t) in the interval. (Assume signal energy as 0.669 over the
period).
(17)
(b) A discrete system has the unit pulse response:

h(n T) = {3, 2, 1, 0, 0, 0, 0, }
(17)
Determine its response for the input:

x(n T) = {1, 1, 2, 2, 1, 1, 0, 0, 0, 0, ..}
Page 15 of 19
Paper 1998
5.
A train of rectangular pulses, making excursions from zero to one volt, have a duration of 2 s
and are separated by intervals of 10 s. Assume that the center of one pulse is located at t = 0
and obtain the trigonometric, Fourier series for this pulse train.
6.
If F(s) =
(8)
(3s + 4) ( s + 5)
find f (0), f (0), f (0).
( s + 1) 2 ( s + 6)
(Note: F(s) is the Laplace transform of f (t)).

Paper 2000
(17)
7.
(a) Define the z-transform.
(b) Discuss the method of obtaining inverse z-transform of the form r(kT).
(c) Given the z-transformed function:
(1 e T )
R( z ) =
( z 1) ( z e T )
(5)
(20)
Determine the inverse.
(15)
Paper 2002
8. (a) With mathematical expressions, define the properties stability and casuality of a system.
(10)
(b) Obtain the difference equation to represent the discrete time system of the figure given below:
(15)
(c) For the above direct form I implementation of a Linear Time Invariant [LTI] system, derive
the direct form II implementation. Show the block diagram and point out the improvement.
(15)
Page 16 of 19
4. NETWORK THEORY
Papers-1992 to 2013
Paper 1992
1.
(a) Calculate the steady state current in the 2 -resistor shown in the figure below. The internal
resistance of the battery is negligible and the value of capacitor C is 0.2 F.
(8)
(c) An a-c supply of 230 V is applied to a half-wave rectifier circuit through a transformer having
primary to secondary turns ratio 10 : 1.
Find:
(i) the d-c output voltage and
(8)
(ii) the peak inverse voltage. Assume the diode to be ideal.
2.
In the circuit shown in the figure below, the capacitor and inductor do not have initial stored
energy. On closing the switch at t = 0, it is found that i (0+ ) = 15 mA and that
Vab (t ) = 0 for all t 0. Evaluate R and L.
3.
(17)
A 1 F capacitor and a 2 F -capacitor are connected in series across a 1200 V supply line.
Find the charge on each capacitor and voltage across each. The charged capacitors are
subsequently disconnected from the line and from each other and reconnected with terminals of
like sign together. Find the final charge on each and voltage across each. (17)
4.
(a) The frequency pattern for an impedance ZLC (s) is shown in the figure below. Where O and
1
X represent zero and pole respectively. If lim ZLC ( s ) = . Determine Z LC ( s ) and realize its first
s
s
Foster form.
(17)
Page 17 of 19
(b) In the figure below, switch S is open and at t = 0 + , the value of capacitor voltage
Vb
2 Vb
. When the capacitor charges to a level of
. The switch closes. Which isolates
3
3
the voltage Vb from the capacitor. When the capacitor discharges back to a level of Vb / 3. The
Vc (0 + ) =
switch opens again. Determine the two timing intervals in a cycle. (17)
5.
Paper 1993
(a) If each of the resistances in the network shown in Fig. 1 (a) is R, what is the resistance
between the terminals A and B?
(8)
(a) Assuming the internal resistance of the voltage source to be negligible calculate the current in
branch XY of the circuit show.
Page 18 of 19
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28-B/7, Jia Sarai, Near IIT, Hauz Khas, New Delhi-110016. Ph. 011-26514888. www.engineersinstitute.

2013 By Engineers Institute of India

Engineers Institute of India

Dedicated to all the Electronics

A word to the students

Electronics and Telecommunication Engineering

IES Conventional Paper-II (E & T)

ESE-2012 Objective papers cut-off marks (Out of 600 Marks)

ESE- 2012 Final recruitment cut-off marks (Out of 1200 Marks)

The number of candidates recommended for appointment are:

MATERIALS AND COMPONENTS ..................................................... 01- 03

ELECTRONIC DEVICES & CIRCUITS ...............................................

SIGNALS & SYSTEM ........................................................................ 18-28

NETWORK THEORY ......................................................................... 29-49

ELECTROMAGNETIC THEORY ........................................................

MEASUREMENTS AND INSTRUMENTATION ................................... 62-74

IES Conventional Paper-II (E & T)........................................ 75-172

ANALOG ELECTRONICS ................................................................. 77-105

COMMUNICATION ENGINEERING .................................................. 106-122

CONTROL SYSTEMS ....................................................................... 123-138

10. DIGITAL ELECTRONICS ................................................................. 139-153

11. MICROWAVE ENGINEERING ........................................................... 154-164

12. COMPUTER ENGINEERING ............................................................. 165-172

ENGINEERING SERVICES EXAMINATION

IES CONVENTIONAL PAPER-I

(E & T 1992 to 2013)

1. MATERIALS AND COMPONENTS

With a sketch of characteristics, explain the features of a power MOSFET.

2. ELECTRONIC DEVICES & CIRCUITS

conductance of the transistor.

By drawing neat diagrams, explain the working of bipolar and field-effect

0.13 m 2 / V- s respectively. Calculate the resistivity of the materials:

For the JFET in the circuit of figure.

Vpo = 3V with usual notations.

Also in this circuit

Calculate VGS and Vo

The transistor, connected in CE configuration, is in amplifying mode. Find ICEO , I C and I E .

3. SIGNALS & SYSTEM

Represent a half sinusoidal pulse g (t ) = sin t , 0 t 1 by an expression involving sine waves

(b) A discrete system has the unit pulse response:

Determine its response for the input:

(Note: F(s) is the Laplace transform of f (t)).

Determine the inverse.

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