NASA-CR-193310

"/2.

FINAL

REPORT
for

"CONSTRUCTION
AND TESTING
READY RECTENNA"
Work

NASA

LEWIS

performed

OF A SPACE

for

RESEARCH

CENTER

under

GRANT

NAG 3-1368

by

THE CENTER
TEXAS

FOR

ENGINEERING

THE TEXAS

A&M

SPACE

POWER

EXPERIMENT
UNIVERSITY

STATION
SYSTEM

N94-I1357
(NASA-CR-I93310)
TESTING
OF
A
Final
report
3?

CONSTRUCTION
AND
SPACE
READY
RECTENNA
(Texas
A&M
Univ.)

Unc

I ;} s

63/32

0175473

Prepared by
Alan M. Brown

,/

Microwave
In February,

Energy

1993, the Solar

Transmission

Power

Satellite

in Space
(SPS)

Working

launch a sounding
rocket into low earth orbit to perform
information
on the high power microwave
- ionosphere
microwave
announced

power
transmission
an open invitation

in space at
to international

METS
experiment
in a number
of categories.
Lewis Research
Center,
the Center for Space
joined
The

the experiment
rectenna

is

characteristics.

by producing
special

The

into DC power.
The
technology
developed
consists

of dipole

antennas,

of the rectenna

microwave

to DC power

This

document

will

filter circuits,

ISAS,

Japan will

1) collect scientific
and 2) demonstrate

Under
the sponsorship
Power
located
at Texas
rectifying

receiving
purpose

from

antenna

receiving
with

is to efficiently

and transmission

of the NASA's
A&M University

antenna

unique
convert

(rectenna).
properties

microwave

and
power

in microwave
power beaming
rectenna
for this frequency
lines etched

on a thin layer

of

of the thin film rectenna

is ideally suited for space applications.
a low specific mass of approximately
1 kg/kW
[1]. The main

component

circuitry

of

Group

2.45 GHz.
The SPS Working
Group
agencies
willing to collaborate
with the

a microwave

main

Rectenna

two activities:
interaction,

rectenna
is an advanced
component
for 2.45 GHz.
The state-of-the-art

Kapton
film. The format
Thin film rectennas
have

in the rectenna

type

rectenna's

(METS)

is the rectifying
are capable

diode.

with special

High
Schottky

conversion
barrier

efficiencies
diodes

correctly

(90%)

in

located

[2].
explain

the

theory

of

operation

of

the

Experimental
test results on the METS rectenna will be presented.
rectenna will also be discussed
to meet space qualifications.

2.45
The

GHz
packaging

rectenna.
of the

Theory:
The rectenna

element

circuitry,

and 3) the

addressed

theoretically

will also be pointed

The

antenna used

can
DC

above

a reflecting

plane.

by the

configuration

k/4 above the ground

located

mll_WlllW,

determines

selected

Nrl1111r/ll

lll

1. Radiation
plane.

The

rectenna

element
sides

elements

has a diode
of

the

neighboring

aspects

unity

standing

areas

will be

of the rectenna

diode.
elements

on the

patterns

the dipole

lines.

in Figure

space.

views.

radiation

produced

Under

The

evidence
wave

I f l I_IIIIIRFIgAH

_'lllr

terminals

is

characteristic

pattern

of a Z/2 dipole

by a single horizontal

1 [4].

this

The broken

arrangement,

dipole

lines represent

no sidelobes

This characteristic

is important

lt

are

for the

of a _/2

dipole

located

lines are the pattern

the

Essentially,

has

of

connected

to convert

ratio

is

the length

power.

patterns

even

a M4

this configuration

by shorting

between

transmission

Z is the free

approximately

under

is obtained

plane are shown

The broken
are

where

though

by a common
microwave
each
they

are

above

to DC

element

physically

shown
in front

to support
of the

this theory

rectenna

[6].

line.

power
is

RF

connected

by the
Even

a ground

the reflecting

transmission

power

rectenna

a )d4

without

and

plane.
Each

rectenna

filters

isolated
from
of the

detection

though

on both

from

by transmission

Theoretically
the collection
efficiency
is 100% when no reradiation
illuminates
into sidelobes
and all radiation
occurs in the main beam
Experimental

rectifying

this separation.

based

and front

dipole

is located

length

'i

Figure

All three

is a k/2

in free

of microwave

_,

balanced

The radiation

as seen by the side

reception

2) the

load.

of the dipole

The gap

of the

was

placed

efficient

)t.

stripline

)d4 over a reflector.

produced

antenna,

Unique

The dipole

of the dipole

0.475

separation

antenna

energy

GHz).

Resonance

located

dipole

theory.

The input impedance

of the coplanar

The antenna

the

the microwave

to approximately

impedance

and circuit

cm at 2.45

120 2 [3].

determined

1) the

line and resistive

antenna

for receiving
(12.24

dipole

parts:

out.

wavelength

the

into three

transmission

using

space

approximately

be divided

their
lines.

the rectenna
rectenna
[5].
of an almost

it appears

to be a

phasedarray of dipole antennas,the

resemble

a single

receiving

power

element.

Thus,

patterns

produced

the rectenna

for airborne vehicles

feed directly

into a two section

performs

1) impedance

match

impedance
higher

to the

order

off cycles

tasks:

diode,

harmonics

2) pass
produced

the

rectenna

non-directive

essentially
and ideal

for

that pitch and roll.

The antenna terminals

three

by

is basically

the

the input

2.45

GHz

by the diode,

low pass filter.

impedance

operating

The

of the

frequency

and 3) act as a tank

low pass filter

dipole
and

circuit

to the input
attenuate

the

for the on and

of the diode.

The filter design is based on the constant k type of low pass filters [3]. The low pass filter
is divided into two sections where the phase shift through each section is 90 at 2.45 GHz.
The impedance

transforming

property

of each section

is governed

by

z2

(1)

Zt

where

Z i is the input

impedance

to the filter, Z o is the characteristic

impedance

of the filter

section, and Z t is the terminating

impedance.
The format of the filter sections
can either
be T or n. The _ format is selected for the rectenna which allows the calculations
to be
performed

easier

in admittances.

The general

format

of the r_ network

is shown

2.

o
O

Figure

2.

Va

Va

Equivalent

rc network

of rectenna

transmission

o
O

line.

in Figure

The expressions

for the loss-free

transmission

line are shown

in Figure

3.

I
cos13 - 1

jwC

jZosin
cos13-

131

jZosin

jwC

13

I
I

I
Equivalent
Section
of Transmission
Line

Figure
The parameter

3. General

network

13is the electrical

expressions

length

for a lossless

of the transmission
2 _L

fl where

L is the physical

length

transmission

line section

line.

and is calculated

as

2 n:fL
-

(2)

of the transmission

line, _. is the

the frequency,
and c is the velocity
of light.
transmission
line is given by Z o. The characteristic

flee

space

wavelength,

f is

The characteristic
impedance
of the
admittance and phase of figures 2 and

3 are given by:

Yo

and

_/Y?I-

0 = cos'if

Y?2

"Y22 )
_, Y12

where

Using

these

calculations

equations
are equated

and

(3)

(4)

Y11 = Ya + Yb = Y22

(5)

Y12 = "Yb

(6)

Figure

3 to

solve

for

the

characteristic

admittance,

the

as follows:

Yll

= jo;C

cosfl-1
jZosinfl

1
+

jZosinfl

(7)

COS_

= jcoC +

jZosin_
1
Y12

jZosin]3

(8)

Then

Yo =

Because

the phase

jcoC +

shift of each section

jZosin/3)

is 90 , equation

-o_CZosin/3
which

can be reduced

jZosZm_

+ cos/3

(9)

(4) can be calculated

as

(10)

to

cot =
Substituting

equation

(11)

(11)

into (9), the characteristic

admittance

Yo-- I Jc2+
The capacitors

used

where

Yox represents

are denoted
The

/ Y2x-

impedance

section

has

second

radians

capacitors

pass

(12)

as

(13)

of the two

filter

impedance

value.

section

are denoted

sections.

The two

are denoted

sections

matches

of 270 f_.

of

are denoted

is calculated

The length

has a characteristic

120

Each

sections

as C 1 and C 2.
the

section

dipole

input

has its own

to

pF at 2.45

GHz.

mm by use of equation

by equation

impedance
(13)

The length
(11).

match

the

dipole

as C 1. By the use of equation

of the first section

as C 2. By use of equation

C 2 is 0.269

or 14.21

impedance

of this section

of this section

C 1 as the capacitor
2.45 GHz.

to 270 _,

equation

to 120 _ and Z o equal to 270 f_, C 1 is calculated

The length

section

input

a characteristic

The capacitors

with Zol equal

The

admittance

low

from

impedance.

impedance.
GHz.

of the

of 120 f_ to the diode

characteristic
first

transformation

(12)

Y2

as Yol and Yo2 and the corresponding

impedance

The

the characteristic

as

1
o

on the low pass filter are calculated

Cx--

is obtained

(11)

is 0.461

of 180

to be 0.485

by solving

f_.

with Zo2 equal

of this section

radians

input
(13)

pF at 2.45

for 13 and using

or 8.97

The capacitors

mm at

of this

to 180 f_ and Z o equal

is calculated

to be 0.73

Thecircuit schematicdrawingis shownin Figure4. The two adjacentcapacitors,C1 and

C2, form onecapacitorwhenaddingthe valuesin parallel. Thus,the valueof this second
capacitoris 0.754pF.
8.97 mm

14.21mm
dL
i F

Dipole
Antenna

- CI

CI--

0.485

dL
'W

--.
-

0.269
lib

120

Figure
The
result

circuit

was

is shown

and the signal

simulated
in Figure

is totally

the attenuation
lines.
-

circuit

than

Feb

O1

circuit

sottware

shift is 180 as seen

by DB[S21].
20 dB.

Sat

schematic.
microwave

the phase

as noted

Touchstone

Touchstone
GI-h,

is greater

DB[SIII
LPF

0.000

Rectenna

At 2.45

transmitted

transmission

4.

DC
)ad

10 pF

180 ohms

by EESofs
5.

of 4.9 GHz,

EEsol

Z ol =

--- -

_i _,.

pF

d&

ohms

C2__- -

C2

pF

Zol

At the

second

This simulation

17:57:t9

lgg2

the

value

(lossless)

LPF_OPTB
o

'

harmonic

is for ideal

OB[S21]
LPF
_

and

by ANG[S21]

ANG[S21]
LPF
_

000

80. 0

-40.00
000

2.450

Figure

5.

Simulation

of constant

FREQ-GHZ

k low pass filter.

4. go0

Physical implementationof

the

capacitor.

The

third

capacitance

[7].

The dimensions

circuit

capacitor

design

is replaced

involves

by

the

of the capacitor

Area

patches

(13),

h is the

capacitors

determined
(14)

are

Kapton

substrate
under

the

side

calculated

from

of

capacitor

value

by

computed

and t o is 8.854

the

coplanar

Therefore,

equation

Teflon

third

effective

(14)

(13).

coating

stripline,

The

the

equation

substrate

mil thick

Because

capacitance

used

is

in equation

is Type

for the copper.

is 0.5

from

x 10 -12 F/m.

the capacitance

used as the laminate

the

are determined

the

an

Eo

substrate,

of 2 mils and dielectric

coplanar

stripline

are shown

7.65

8.
_

the

in series.

with FEP Teflon

thickness

Ii

each

of

produces

F Kapton

The thickness

on both

of

sides.

The

constant
of the Kapton
film with the Teflon
coating
was experimentally
to be 3.09 at 2.45 GHz and the loss tangent
to be 0.0033
[7].
Using the

dimensions

on

film is 1 mil and

dielectric
discovered

of the

the halves

the value

by DuPont

C is twice

constant

halved

by adding

is twice

made

height,

r is the dielectric

the

the

substrate

elimination

which

hC

_r

where

the

diode

are

in Figure

calculated

constant
by

equation

(14).

the

area
The

of the
printed

capacitors
circuit

and

6.

27.84

0.56
3.73,

"11
/1.35__.

of 3.09,

15.88

_1_ 4
,-p

-1TM

i1

13.46

---7

_m

to next

dipole

-I.J
I

i3.18
2.36

58.4

All

Figure
The

dimensions

substrate
2.45

GHz,

of the

and the desired

a dielectric

6. Physical
coplanar

stripline

impedance.

constant

rectenna
are

Because

of 1.0 is used.

layout
based

Dimensions

in mm

and dimensions.
on

the Kapton
To obtain

the

dielectric

film is electrically

constant

of

the

thin (<< _) at

the 270 f_ transmission

line, the

strip width (W) is 1.59mm andthe separationgap (S) is 2.36 mm. The equationsto
calculatethe characteristic impedance of coplanar stripline are given below [8]:
S

k =

(15)

S+2W

k' =

K(k)

_-

k2

_r

K'(k)

(16)

for0

< k < 0.707

(17)

_-;
In/ 2 II +-'fk;

120 _
K(k)
/r
+ 1 K'(k)

(ohm)

(18)

V
The

diode

is the most

important

component

for efficiently

converting

into DC power because it is the main source of loss [7]. Plated

diodes with a GaAs semiconductor
have proven to be the best
process.

The

in Figure

7.

the package
[9].

circuit

model

The diode
capacitance

zero-bias

parameters
Cp,

0.45

Rs=

0.5 ohms

Cp=

0.3 pF

junction

capacitance

of the Schottky
inductance

capacitance

Rs<

barrier

diode

barrier

Cjo is typically

diode

Lp, the series

Cj, and

_,.

model

power

heat sink Schottky

barrier
device for this conversion

the junction

Lp
t 1

nH

7. Schottky

values

are the package

the junction

Lp=

Figure
The

and parameter

microwave

Cp

and parameters.

3.5 to 3.8 pF.

are shown

resistance
resistance

R s,
Rj

The seriesresistanceRs is
Figure
current

important

in determining

the efficiency

7, this value is low.

In the conduction
portion of the rectification
flows through it, while on the non-conducting
portion the charging

through

the junction

capacitance.

The

value

of R s depends

material used, the doping density of the epitaxial

and the area of the Schottky barrier junction.

layer,

Another

voltage

starts

important
to conduct

DC output
the epitaxial
thus,

of the diode.

parameter

is the

in reverse

voltage

bias.

in combination

Maximum

output

breakdown

voltages

The breakdown

of the rectifier.

layer, the zero-bias

range

of this type of high power

The

parameter

junction

with the
power

breakdown

area

from

(Vbr)

Vbr

determines

by the

the

semiconductor

at which

is typically

the" series

the doping

Figures

resistance

voltage

of

8 and 9 show

IV trace

tO .OC
/air

/
!

Figure

8. Typical

t.O00

IV trace

of forward

biased

(V)

Schottky

barrier

diode.

a typical

9 807mA

.iO00/div

of
and

Typical

IO0.0

VF

the

diode.

(mA)

.0000
.0000

diode

density

R s of the

the

IF
.7600V

the

thickness,

diode.

MARKER

layer,

2.5 times

Clo, and its minimum

breakdown

-55 V to -70 V.

cycle the DC
current
flows

of the epitaxial

of the diode

voltage

capacitance

of the junction,

is limited

upon

the thickness

As seen in

diode.

MARKER(-60.OOOV

-3.265uA

.0000

1.000
-/div

-I0.00
-65.00

.0000
VF

Figure9.
These

diodes

TypicallV

are extremely

and are very durable.

traceofreversedbiased
efficient

They

(V)

6.500/div

Scho_kybarrierdiode.

in converting

can convert

the power

the microwave
at input

power

levels

into DC

of 10 W per diode.

power
The

physical construction
of the diode is shown in Figure 10 [6]. An important
aspect of this
construction
is the 1 mil gold wire connecting
the top of the diode to the GaAs chip. Due
to the wires small diameter,
it will bum in half if too much current
flows through
the
diode.

In an array

of rectenna

current

from shorting

through

elements,

the wire

protects

the

array

one diode.
0.001

SCREW

by preventing

INCH

GOLD

WIRE

BASE

AND
HEAT

PEDESTAL

SINK

TOP
MAJORS
SHOWN

FEATURES
NOT

TO

SCALE

\
CERAMIC
WA LL

\
SCHOTTKY
BARRIER

Figure

10. Cross

section

view ofGaAs

GaAs
CHIP

Schottky

ELD

barrier

diode.

the

The

large

signal

For coplanar
as shown

model

stripline,

in Figure

of the

diode

is represented

it is convenient

to convert

by a resistor
the series

and capacitor

elements

in series.

into parallel

elements

11.

A
v

Ill

cT

A
w

Figure
The equations
given

11.

Series

to convert

and parallel

circuit

the resistor

configurations

and capacitor

from

of large
series

form

signal diode.
into parallel

form are

as

R,

R + --X 2
R

whereX-

(19)

coC

C' -

(20)

R 2

+1
X2
The efficiency
the diode

input impedance

the DC load
characteristic
value
shows

of the rectenna
resistance

the

is dependent
is typically

impedance

of the

of 350 f2 to 380

resistance

is dependent

efficiency

on the DC load.

1.3 to 1.4 times

coplanar

of a single

thin

DC output

element

OC

12.

DC

resistance

85%.

Figure

as a function

of DC

POWlSlt

,,., ,,., ,.,

Single rectenna

I_lltlEII

element

O(JTImLJT

INTO

,:,
LOAO

efficiency

,.,, ,.,, ,.,

RESISTANCE

as a function

of De

The

a load

RESISTANCE
DC
LOAO

IFFOCIENCY

Figure

around

[3].

OHMS

,k

D,, therefore

that

efficiencies,

impedance

level [ 10].

IlU

input

efficiency

film rectenna

power

diode

is 270

a conversion

This implies

For high conversion

the

stripline

f2 will produce

and operating

on the DC load resistance.

load resistance.

12
load

Using Figure 12, it is possibleto

design

power.
The characteristic
impedance
ratio between
the DC load to diode
match

the diode

input

impedance

a rectenna

based

on the DC

load

and

output

of the coplanar
stripline is then determined
from the
input impedance.
Thus, Figure
12 can be used to

to the characteristic

impedance

of the transmission

line.

The dipole input impedance,

diode input impedance,
and DC load are all related.
Efficient
rectenna
design cannot take place without understanding
the relationship
between
these
components.
incident

Efficient

power

The diode performs

approaches

the

design

the highest

This

voltage

conversion

voltage

component,

diode.

also depends

The breakdown

the breakdown

The last circuit

atter

rectenna

density.

composed

of

but equally

capacitor

efficiency

important,

performs

mismatches
its area

stripline between
diode capacitance

the

diode

between

separates

the

by

creating

an open

two

The spacing

between

tasks:

DC pass
1) tunes

effective

The capacitor

dipole

which

impedance.
Another
stated

dipole

on

top

phased

array
the

resembles
a phased

will change

is 0.635

when

array

further

_..

effect

is the

array.

Figure

greater

in a large

10 pF and
DC

the

bus

capacitor

elements

by

However,
13 shows

in rows

in series.
Even though
electrically,
the input
The

affects

rectenna

the patterns

created
harmonic

surface

the

waves

dipole

input

by the

array

at the

diode.

by the harmonics
(4.9

GHz)

As

operating
do

radiation

was measured
by recording
the rectenna
was illuminated

source.
Normal
incidence
of the array. As seen from

array.

to
is
and

are connected

produced

by the

pattern
while

phased

2)
the
the

of the rectenna.

of harmonics

produced

second

as a normal

Since

array.

elements

the

detected

than

the rectenna

The elements

pattern produced
by a a 4 x 5 rectenna array. The
radiation
level when rotating around the rectenna
normal incidence
by the power
which is the broadside
direction

and

capacitance,

dipole.

isolates

array effects

radiation

pattern

a single element.

placed

of rectenna

is one of the phased

radiation

diode

dipole feed point.

antennas

of a large

This aspect

previously,

frequency
resemble

of the

occur

the

placed

A quarter-wavelength

of parallel rectennas,
and for large arrays, the rows are connected
each rectenna
element
is basically
isolated
from
each
other
impedance

power

capacitor

junction

is usually

antennas.

the L/4 spacing

at the adjacent
the dipole

vital

to the feed of the adjacent

short circuit,

circuit

the level of the incident

is the large

capacitance,

of the

end of the capacitor

acts as a microwave

when

of the

by this factor.

The separation
between
this capacitor
and
capacitance
on the diode.
In other words,

and dipole.

spacing

prediction

this capacitor
and diode controls
the inductance
given in equation
(20).
The parasitic
capacitance

package

the diode

is limited

accurate

of the diode.

electrically
shorts the microwave
energy.
diode is critical for resonating
the parasitic
length of coplanar
resonate
with the

on the

of the diode is determined

the
at

is marked
at ninety degrees
the figure, peaks and nulls are

_, 30
/'N

\
\ ,f-,,,,

\/

._ lO

10

20

30

40

50

60

70

80

100

90

110

120

1'-

130

140

150

160

170

180

Angle (degrees)
Azimuth
Plane

Figure

METS

13.

Second

radiation

produced

by a 4 x 5 element

rectenna

array.

Rectenna:

The

METS

the

rectenna

daughter

rectenna
payload

daughter

detected

and

(zener

diodes)

close

proximity

is an unique

is acting

The microwave
the

harmonic

application

as a microwave

section
power

power

and is released

from

Any microwave

may be produced

placed

across

of the daughter

by the main beam

METS

spacecraft

located

on the microwave

with

the

near

or as sidelobes.
and

transmitter

the

during
daughter

Japanese
indicate

away

section
Voltage
Due

the received

microwave

14 shows

the top view

Figure

rectennas

unfolded.

the transmit

The

polarization.

[-7
JRa_e_ee
Snn_

Paddle

"_

Transmitterpaddle_

Figure

14. Top view of METS

rican
._

mother

Rectenna

and daughter

spacecraft

on the

the experiment.

in directions

the instrumentation.

to the transmitter,

American

power

section

experiment,

is located

as a 0 to 5 V signal.

the DC load to protect

section

rectenna

will transmit

located

package

In the METS

The

the mother
section

power

sent to the instrumentation

rectenna.

detector.

beam from the mother

section.
were

of the

sections.

from

will be
limiters
to the
power
of the
arrows

The operatingfrequencyof the power transmitteris 2.411GHz. The METS rectennais

designedfor 2.45GHz but thereis minimal,if any,reductionin performance.
The packaging

of the METS

rectenna

was also unique

due to the size constraints

performance.
The dimensions
specified
the rectenna
package
to be 27 cm
wide, and 1.6 cm tall. The rectenna
circuit is etched on the thin film Kapton
in the theory

section,

and the single

The

between

the rectenna

spacing

This spacing
of this

was reduced

separation

dipoles

input

impedance

plane

dimensions

causes

an impedance

impedance

(120

the transmitted

power

from

plane

between

Theoretical

25 f_ when

in Figure

0.11

the mother

free

The

reduction

space

and

the

indicate

the

dipole

_, above

section

2 to 2.5 cm.

contents.

calculations

spaced

6.

is normally

by the package

mismatch

_2).

are shown

and the reflecting

to 1.1 cm as mandated

to be approximately

However,

element

and the

long, 10 cm
as discussed

a reflecting

is predicted

rectenna
input

plane

to be 800

[11].

W, and

this impedance
mismatch
will help to protect
the rectenna
circuitry
from large power
densities.
Because
rectenna
efficiency
will not be considered,
the impedance
mismatch
works for the rectenna.
After

releasing

from

the mother

and

the

from the mother

section.

transmitter

on the

rectenna

polarization

rectenna

layer

layer

to create

foreplane
The

from

was

rigorous

dual

The

and

strong

The material
by carbide

from

layers

the Kapton

to house

construction

tips to the specified

for

spring

on

the

rectenna

with

during

dimensions

placed

and tapped
also

drilled

to secure

in the package

foam

at 2.411

elements.
isolate

A second
them

and

the Kapton

the Kapton

performance.

the rectenna's

rocket

launch

to hold

to the G10 lip.

Because

materials

foam

to securely

layer

and

layer

Rigid

Hz.

was

cut

to hold the

screws.

secure
was

the

selected

An epoxy

A lip

was

between

of Volara

thickness

composed
the

to be 5

constants

of

is much

RF transparent

ROHACELL

rectenna
glue made

A 20 mil layer
the dielectric

are basically

is placed

hold them.

to be
is 3.06

to 2,000
block

screws
the

are low and their

The first rectenna

vibration

the contents.

of the rectenna

covering.

(e r = 1.08)

GHz, these

Volara

the

is predicted

for the

under the lip on the G10.

and Volara

single

G10

between

layer was placed

( e r = 3.8)

rectenna

existing

The

The

This Kapton

to bond

first

15 g for 400

was G10 fiberglass.

direction

underneath

the

a second

an

launch

load.

in the broadside

was used

prevent

the

to

covering

placed

To

off axis
polarized,

polarization,

during

to a 140 g static

pins were

were

to rotate
is linearly

polarized.

is similar

The shock

equates

the rectenna

not effect
electrically

linearly

the transmitter

10 to 35 I-Iz, 7.5 g for 35 to 400 Hz, and

less than the wavelength

rectenna

section

[12].

and construction.

of materials

Goodrich

6E foam was

is expected

is 90 out of phase

imposed

This force

Holes

The top

mil Kapton.
by B.F.

is also

layer

This

section

in the theory

was milled into the top of the G10 frame

Different
layers.

for

plane.

overhang

second

vibrations

materials

selected
milling

reflecting

section
misaligned

polarization.

40 g for 10 milliseconds.
mm (amplitude)

the daughter
described

with dual polarization

forces

necessitated

mother
being

added.

recterma

section,

The rectenna

and do

of separate

rectenna
foam

layers

to

made

by

Rohm is used to
grade

separate

the

71 has a low dielectric

(0.0003).
constant,
then

reflecting
constant

from

(e r = 1.08

the

rectenna

at 2.0 GHz)

layers.
and

ROHACELL

a low

loss

tangent

This product
is ideal for this application
due to its rigidity,
low dielectric
and ease in milling to the correct height.
A 60 mil aluminum reflecting
plane was

secured

to the Gl0

frame

by screws.

(grade 8), and 12 spring pins connected

were bonded to the frame by Loc-Tite
package

plane

and figures

16 and 17 show

Eighteen

4-40

size screws,

six 8-32

screws

the reflecting plane to the G10 frame.

The screws
410. Figure 15 shows the contents
of the rectenna

the dimensions

of the G 10 frame.

GIO

5 mil
Volara
20

Kapton

Foam
mil

First Layer
of
Thin Film Rectenna
Volara

Foam

20

Array

mil

Second
of
Thin
Film Layer
Rectenna

Rohacell
Foam
11 mm

60

mil

Aluminum

Reflecting

Plane
Figure

15. Package

contents

ofMETS

rectenna.

ij'll

a_

I
.....

.....

C_

I
I

....

_j

I
I
I
L_
C'-

I
I
I

II

I
I

<_

I
I

a_

II
.....

a0

a_

i::':.'I

t_

I
I
I
I
I

n_

o_,,l
I11

I
o

a_

..C

oo

I
I

p_
o,=-I

I
I

b_

I
I
I
o

O0

,!

.c
....

oj

a_

o,--I

_o

L_

o_=,1

P=l
O0

II

I
a_

L_
C'2

I
I
I

".i_'J.- ".

_I _

I " I"

C,1
L_

o
L_

"

c_

,i

_[,,

_.

!
!

c_

t_

c_

i
!

Ol

L....

C_

c_

r_
rf_

e_
v_

c_
[30

_Q

C_
o_

u_
c_

c_
e,j
k

E_

Lr_

_c_
c_

c_

k
....

C_

r-'!
!

t_
c_
-i-

S_k

Six IMPATT

GaAs

diodes

were

ordered

from

M/A-COM,

diodes (model # M/A 46137 with Cjo = 3.6 pF) are designed
X-band.
For the rectenna application,
these Schottky
barrier
process.
microwave
55 V.

Instead
power

The

requirements

are met by these

Due

of generating
an oscillation
into DC power in the S-band.
for an efficient

IMPATT

diodes.

power

densities

to excessive

These

diode

METS

as discussed

rectenna,

surface

mount

as microwave
sources
in the
diodes are used in a reverse

from a DC source,
the
The breakdown
voltage

rectenna

on the

Inc.

diodes
of the

convert
diodes is

in the theory

the heat dissipation

section

from

the

diodes is an important
lines on each rectenna

issue.
Copper strips of 20 mil thickness
were glued to the DC bus
element to act as heat sinks. The same epoxy glue used to bond the

Kapton

G10

cover

transmission

to the
lines.

Figure

frame

was

18 shows

applied

where

to bond

the copper

the

strips

copper

strips

to the

copper

were applied.

i i\
20

mil

Copper

Strips

I J

.................................................
_:!.%,>i_
,%,..__,i_ ____ __.%,.-,...%,>.-:!.,.-.,.._
_:i_S_ {_:i:i_:i_
___

Figure
The

rectenna

constraints
located

18. Placement

layers
of the

were
rectenna

in the optimum

on the bottom

of the copper

positioned
package,

positions.

strips

as shown
the

top

The elements

on the rectenna

in Figure
layer

19.

Due

of rectenna

were placed

elements.
to the

elements

equally

dimensional
could

between

layer.

!
Figure

19. Stacked

layers

of rectenna

elements

in METS

rectenna

not

be

the elements

package.

The middle
the outside

element

of the top layer

elements.

Experimental

reversing

the

detector.

Figure

pass

middle

capacitor,

element.

20 shows

was

reversed

evidence
Thus,

by the

large

by wires

that run underneath

7.7

7.14

Figure
The DC power
array

(top

dissipating
21.

layer

its dipole

the output

rectenna's

from

voltage

performance

of the top layer

white

bottom
layer's DC pass capacitor.
This
transmission
lines between the two layers.
in parallel

proved

the

the dimensions

represented

to isolate

patch,

located

of

increased

by

was

was

of rectenna

was

the dipoles
improved

elements.

directly

as

The

DC

on top of the

placement
minimized
field interference
on the
The top layer rectenna
elements
are connected

the ROHACELL

cm

foam.

_11

cm

20.

is collected

Spacing

between

by electrically

and bottom

layer)

25 W of DC power

top layer rectenna

insulated

wires

to the DC resistive

by zener

diodes.

elements.

that connect

load.

The

The DC load

the output

DC

package

load

of each

is capable

is shown

in Figure

263
240 t') __285
2W

1
I

Figure

130
4W

21.

DC load and zener

f2

f2
V2W

I
Zener Diodes
22 V, 5 W Rating
Each
25 W Total Protection

of

diodes.

1/4w

q_
4.7 V
400 mW

The resistiveload as seenby the

elements
was

in each layer are connected

targeted

rectenna

for

these

the METS

will perform

load will receive

power

rectenna

rating

daughter

in parallel,

rectenna

based

well as a detector
of the 22 V zener

in parallel

sections

is 25 W.

during

the

is 130 fL

each element
on the

Based

the three

rectenna

has a 390

f_ load.

This load

The

curve

in Figure

maximum

power

of the two resistors

diodes

is 5 W.

on the separation

experiment,

Because

efficiency

with this load.

is 3.72 W, so the total rating

on each

diodes

arrays

transmitted

power, a rating of 25 W will provide adequate protection

V level of the zener diodes is based on the breakdown

The

in parallel
power

between

power,

and

The
130 f_

is 4 W.

rating

distance

12.
the
with

the mother

estimated

The

five of
and

sidelobe

to the rectenna
circuit.
voltage
(55 V) of the

The 22
rectenna

diodes.
Two
used.

different

types

of resistive

This type of resistor

microwave

power

loads

were

has capacitive

beam.

A spurious

tried.

A 5 W wire

and inductive

wound

elements

signal a 320 MHz was

resistor

which

generated

interact

during

was

first

with the

the rectenna

testing.
Atter switching
to a carbon resistive load and shorting
of the wire leads between
the rectenna
and the load, the spurious signal disappeared.
Figures
22, 23, and 24 show
the 2 kHz to 10 GHz
produced

spectrum

by the rectenna

al-TEN
RI_.

diode

when

the METS

are shown

in figures

. OdBm

IOOB/

was

operating.

The

harmonics

23 and 24.

MKH

;:_OdB
10

rectenna

-.

. 67cllBm

451GH7

l
o

MKF_
2_.451

GtH7

--.67

clEm

CENTER
FIBW

Figure

22.

1
2

. 450GHz

. ONIHz

Measured

spectrum

SPAN
VI_V

. OMt

when operating

I_

the METS

2
SWI

rectenna,

900GHz

60ms

2 kHz to 2.9 GHz.

I'-IKA
.:_ . _!_-4

C=-Hz

START

RBW

Figure

23.

Me_ured

STOP
3

VBW

spectrum

ATTEN
RL

. 900GHz

. ONHz

when

operating

lOdB

. O00GHz
SWP

the METS
Mt<A

oaBm

lOaB/

MKR
7 . 320

. ONHz

70ms

recte_
--48

2.9 to 6 GHz.
17dBnl

. 320GHz

GHz

--48.

17

laBm

t
I
START
REIN

6
2

. O00GH7

. OMHz

Figure 24. Measured

STOP
VEiN

spectrum

11.0

. OMHz

when operating

. O00GHz

SNP

the METS

PlOrrls

rectenna,

6 to 10 GHz.

To prevent

the maximum

output

designed.

The

maximum

maximum

power

delivered

resistor.
zener

Using
diode

power

voltage

current

through

the

to this resistor

the same maximum

is 309

from exceeding

mW.

The

263

mW

the maximum

rating

power

on this output

circuit

was

mA.

Thus,

the

will protect

the

is 66

seen by the output

diode

will also

4.7 V

handle

this

level.

The testing
tests were

of the METS rectenna

involved
many
performed
with a separation
distance

transmitter

and

Friis equation

the rectenna.

The

power

where

a horn

power

was measured

Figure

antenna

25 shows

the transmitter
frame.

reversed.
dipoles.
dipole

and orientations.
(89 cm) between

rectenna

was

calculated

All
the
by the

Pout Gtrans
4 trR 2

by use of a voltmeter

the results

As shown,

the performance

The reason

for the increased

The capacitive

fringing

Therefore,

is little difference

(21)

that

across

antennas.

elements

increases

when

The

were tested

the middle

is the improved

between

the middle element

dB.

with the electric

The elements

performance

that occurred

had a gain of 9.63

output

a 130 f_ resistor.

of the top layer rectenna

with the dipole

26 shows the output

power density.
The

there

at the

was used as the transmitter

polarized

efficiency.

Figure
versus

density

configurations
of 35 inches

as

Pdensity

G10

f_ resistor

divider

is 1.14 W and the 2 W rating

current,

400

5 V, a voltage

the dipole

was reversed

field from
without

rectenna

the

element

isolation

is

between

the

ends had reduced

the

for all following

results.

voltage
of both top layer and bottom layer rectenna
arrays
G10 frame was not used for these results either.
As seen,

between

the polarizations.

Figures 27, 28 and 29 show the results of the rectenna

the transmitted
electric
field with and without
the

orientation
G10 frame.

to the polarization
As seen from

of
the

progression
of the rotation,
the effect
of the G10 frame becomes
prominent.
The
dielectric
constant
of the G10 is 4.8. Because
a 1.6 mm lip of the G10 extends
towards
the

dipoles

There
with

exists

on the top layer,

another

the bottom

the

reduction

layer

rectenna

as seen

the frame to Figure 25. However,

the interaction
between
the layers
densities.
Figure

30 shows

the output

Instead

of a relatively

voltage

output

rectenna

influence

voltage

when

greatly

reduces

due to the reaction

comparing

when

as the rectenna

the rectenna
be expected
rotates

This figure is an extension

is rotated
from

towards

of figures

the

dipole

performance.

of the top layer

the results

the reduction
in performance
helps to protect the rectenna

fiat line as would

is reduced

elements.

G10

in performance

of Figure

rectenna

27 without

due to the flame and to

circuit from high power

in a clockwise

a dual polarized
the polarization

27, 28, and 29.

direction.

rectenna,

the

of the top layer

,q.
r-,

6.)

Vm_
o,,-4

E
G.)

r-,

em

<

k.

"x3

omm

63

t_.

63
63

x_.
m

O
qmb

"r"
t_

O
D
63
{.)

t"-4
t.a

(_)(IA)

o8_;lOA

_nd_no

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t_
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r-.

0
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0

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t_

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iI

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a_lA

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0
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t_

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lndlno

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t_
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lm

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Although
test

the rectenna

of this

rectenna

conversion

package

was

is rotated.

efficiency

performed.

The efficiency

is not a concern

Figure

31

was calculated

shows

of the

the

METS

rectenna

experiment,

efficiency

by use of the Friis equation

as the

as

VD2C
7] =

Rlad
4 _ R

where

the rectenna

(22)

Gtrans Grectenna

gain was calculated

Ptrans

by
47t

Orectenna-

The

effective

element.
horn

Thus

of the

on the

was

mW/cm

2.

rectenna

at all rotation
The

from the

figure,

the

efficiency

particular

rectennas

array,

quite different from normal

have nulls and sidelobes.
A test was conducted
where

23 VDC

from

and the voltage

34 which

proved

The final assembly,

load circuit,
changes
detection
microwave

from

the

35.

power.

included
The

rectenna's

Although

the

on the

is good

and

diode

layers

bottom

impinge

layer

the package

Even

on the

about

and

though

The

recorded.

there

was
source
The

are 3

of antenna

distribution

source

their

an unique

This type

phasing

was

is

which

connected
was
result

do

to the

elevated

to

is shown

in

design.
the

performance

diverge

is rotated

voltage.

of rectennas,

detection
curves

dramatically

emphasize

section.

be located.

of the circuit

both

at the

of the G10 frame

may

patterns

A DC voltage

would

from the 4.7 zener

rectennas

performance

of uniform

the rectenna

density

The same

density

drops

as the rectenna
These

in the theory

arrays

the effectiveness

which

was tested.

in Figure

pattern

on the DC load alone.

the outputs

power

are no nulls on the output

phased

angles.

cm 2 per

protection.

polarization.

as discussed

there

a high

of 50

power

This drop is due to the influence

Because

voltage

about

value

W.

the output

in each

the

area

As seen

elements.

to the

using

250

32 and 33 show
respect

by

(23)

transmitting

as circuit

elements

shown

for the effective

used

can serve

characteristic

Figure

determined

the inefficiency

with

load

was

of 75% to a low of 2.6%.

top layer

rectenna,
Figures

earlier

was 23.1

from a peak

rectenna

150 cm 2 was used

as mentioned

rectenna

axis

area

,_ Aeffectiv e
A,"

from
to the

G10

frame,

at different
each

other

rectennas

can withstand

large

and the DC

orientations

as the
on the

top

amounts

are

polarization
layer,

the

of incident

Q,,

E
_t

cD
I

_D

*m

t_

e_
q_

t..

t_

>.
e_
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(%)

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_D

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)
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IILII_

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c_

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mmu
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