Documenti di Didattica
Documenti di Professioni
Documenti di Cultura
Development of highly manufacturable processes for wide band gap technology compatible with a Si-production
Si
environment
CMOS Process
Process-Compatible High-Power
Power LowLow
Leakage
age AlGaN/GaN MISHEMT on Silicon
Marleen Van Hove, Sanae Boulay, Steve Stoffels, Xuanwu Kang, Dirk Wellekens, Karen Geens,
Michel Mlotte, and Stefaan Decoutere
I. INTRODUCTION
high-electron
electron mobility transistors (HEMTs)
have attracted a significant amount of interest for highfrequency and also high-power
power applications because of their
potential for fast and low-loss
loss switching, high breakdown
voltage, high operating temperature and radiation robustness.
robustness
The majority of devices have been realized to
to-date using the
AlGaN/GaN material system using Schottky gate metallisation
schemes (e.g. Ni/Au) and processed on costly SiC substrates.
However, for mass market penetration of the power
pow
conversion market it is important to reduce the cost of GaN
power devices by adopting processing techniques that make
use of the economies of scale of the Si industry [9]. Therefore
a key aim of the work performed on the ESA funded
Development of highlyy manufacturable processes for wide
band gap technology compatible with a Si production
AN-BASED
PECVD SiN
W
Al2O3
MOCVD Si3N4
Al0.2Ga 0.8N
This work was supported in part by the European Space Agency through
the GaN-in-the-Line project (20713/07/NL/SF).
M. Van Hove, S. Stoffels, X. Kang, D. Wellekens, K. Geens, and S.
Decoutere are with the Interuniversity Microelectronics Center (imec), 3001
Leuven, Belgium (e-mail: vanhove@imec.be).
S.. Boulay is with the Holst Centre, 5656 Eindhoven, The Netherlands.
M. Mlotte is with Thales Alenia Space ETCA, 6032 Charleroi, Belgium.
GaN
10 nm
10
-12
G
10
ID
I (A/mm)
IG
10
-6
10
GS
10
-10
10-12
10
-12
10
15
-3 V
4
V
DS
6
(V)
10
Fig. 6. Pulsed ID-VDS curves (pulsewidth 1 ms) of a 20 mmwide power transistor. The maximum output current is 8 A and
the specific on-resistance is 2.9 mcm2.
-8
10-10
-2 V
10-3
0
VGS (V)
10
15
VGS (V)
ID (A)
10-8
-5
-1 V
10-6
10
0V
4
2
-20
-2
10
=2V
1V
b)
-16
0
-4
GS
10 -24
-4
I , I (A/mm)
10-2
a)
VDS = 1 V
ln(I )
100
-8
I (A)
10
-4
10
-5
10
-6
10
-7
10
-8
GS
= -8 V
7 A
10-9
10-10
200
400
600
V (V)
800
DS
(0,0)
(-6,50)
0.6
ID (A/mm)
0.5
0.4
0.3
0.2
0.1
0.0
0
10
20
30
40
50
VDS (V)
16
VDMOS
6
GaN
6
4
25C
75C
125C
175C
2
0
2
0
-6
-4
-2
(normalized to 25C)
VDMOS
1.8
GaN
1.6
1.4
1.2
GaN 500 m
GaN 20 mm
VDMOS
1
0.8
0
50
100
150
200
Temperature (C)
Fig. 9. On-resistance change with temperature for 500 mwidth and 20 mm-width power GaN transistors in comparison
to a Si VDMOS power device.
Furthermore, the drain leakage currents (ID,leak) were
measured in cut-off conditions (VGS = - 7 V) with VDS swept
between 0 V and 400 V. The increase of ID,leak with
temperature for the 20 mm GaN power transistors is shown in
Fig. 10 for different VDS and compared to the behaviour of the
Si VDMOS reference device. For both devices the drain
leakage current exhibits an exponential increase over the
-3
10-4
VDMOS
GaN
10-5
10
ID,leak (A)
ID (VDMOS) (A)
25C
165C
10
10
10
ID (GaN) (A)
12
on
12
14
-6
10-7
10
-8
10
-9
10
-10
10
-11
100V
200V
300V
400V
50
100
150
200
Temperature (C)
45
Xe
Ne
Ar
Kr
20
No radiation
25
15
10
DS
= 1V
increase of Ron
-3
10
Vth shift
spikes in forwards
IG leakage
I
-5
leakage
increase
ID
10
10-7
a)
= 16 m
GD
30
on
R ( mm)
35
99
40
I , I (A/mm)
95
90
10-9
Percent
80
70
-6
-4
-2
V
GS
50
30
20
10
(V)
Fluence: 1 10 p/cm
1 -10
-9
-8
-7
-6
-5
-4
-3
-2
10 10 10 10 10 10 10 10 10
I
G,leak
99
(A/mm)
b)
95
90
Percent
80
70
V : 50-200 V
ds
V : 200-400 V
ds
50
30
20
10
5
1 -10
-9
-8
-7
-6
-5
-4
-3
-2
10 10 10 10 10 10 10 10 10
I
G,leak
(A/mm)
VI. BENCHMARKING
Table 1 shows the benchmarking of the main electrical
parameters of the 60 mm imec project demonstrator devices in
comparison to commercially available or prototype Si, SiC
and GaN power devices. The selection criteria are based on
the maximum drain-source voltage (600 V) and on the DC
drain current (12 A). Note that the EPC GaN device is E-mode
with a Vth of +1.4 V, while both the microGaN and imec GaN
devices are D-mode with a Vth of -2.8 V and -3.7 V
respectively. From this benchmark comparison we conclude
that the imec devices are state-of-the-art for all parameters.
In the comparison with the EPC devices, the imec devices
have a larger on-resistance, but much reduced values for the
capacitances resulting in devices with, most probably, higher
switching speed. In comparison to both the GaN EPC and
microGaN devices, especially the low values for the drain and
gate leakage of the imec devices are striking.
VII. CONCLUSION
The goal of the project was to develop processing techniques
for manufacture of GaN-on-Si power devices compatible with
processing in a Si CMOS production environment and can be
viewed as part of the wider ESA strategy that is aimed at the
Si IGBT - IR - IRGB4045DPbF
[2]
VBD (V)
ID (A)
Vth (V)
Ron ()
ID,leak (A)
IG,leak (A)
CISS (pF)
COSS (pF)
CRISS (pF)
Qg (nC)
200
15
+3
0.15
1
0.1
800
165
26
24
600
12
+3
0.26
1
0.1
1000
60
3
35
600
12
+3
0.22
1
0.1
1200
54
1
26
200
12
+4
25
0.1
350
29
10
19.5
1200
24
+2.4
0.16
0.5
0.25
930
63
7.5
11.8
200
12
+1.4
0.03
50
200
440
310
30
7.5
600
12
-2.8
0.2
500
500
9
32
8
7.4
600
12
-3.7
0.1
30
3
113
17
8.4
8.6
[3]
[4]
[5]
[6]
[7]
[8]
[9]
[10]
[11]
[12]
[13]
[14]