As we all know the basic building block of all electronic circuits
is a semiconductor.Imagine if we found a material which is
optically transparent and also has good conductivity.It can be used to form transistors-BJTs ,FETs.the whole electronic circuitry can be made transparent.
What is a transparent electronics?
Transparent electronics is an emerging science and technology field focused on producing invisible electronic circuitry.
Historically, this area was dominated by transparent conducting
oxides (oxide materials that are both electrically conductive and optically transparent).But there has been drastic change in the number of material available for transparent electronics. As we all know a transparent material is an insulator which posseses filled valence band and empty conduction band but metallic conductivity appears when Fermi level Lies within a band with a large density of states.These two properties are contrary to each other. But a compromise can be chieved by SLIDE 3 BursteinMoss effect In a nominally doped semiconductor Fermi level lie between conduction band and valence band, suppose if we increase the doping level in the material, such that the In case of degenerate level of doping Fermi level shift to the conduction band, the apparent band gap increases. SLIDE 4
In degenerate semiconductors, an electron from the top of the
valence band can only be excited into conduction band above the Fermi level (which now lies in conduction band) since all the states below the Fermi level are occupied states. Pauli's exclusion principle forbids excitation into these occupied states. Thus we observe an increase in the apparent band gap. Apparent band gap = Actual band gap + Moss-Burstein shift. SLIDE 5 This combination is achieved in several commonly used oxides In2O3, SnO2, ZnO and CdO. In the undoped stoichiometric state, these materials are insulators with optical band gap of about 3 eV. To become a transparent conducting oxide (TCO), these TCO hosts must be degenerately doped to displace the Fermi level up into the conduction band Conventional n-type TCO hosts (In2O3, SnO2, CdO and ZnO) share similar chemical, structural and electronic properties. Exclusively oxides of the posttransition metals with electronic configurations, they have densely packed structures with four- or six-coordinate metal ions. There are two types of Doping:1. Substitutional doping. 2. Oxygen reduction. 1.Substitutional doping with aliovalent ions is the most widely used approach to generate free carriers in TCO hosts. Compared with native point defects, it allows a better control over the resulting optical and transport properties as well as better environmental stability of the TCO films. Traditionally, same-period, next-row elements, e.g, Sn4+ for In3+ and In3+ for Cd2+, are thought to provide better compatibility and, thus, less disturbance in the host crystal and electronic structure.However, other dopants may prove beneficial for optimizing the properties for a specific application. For example, transparent conducting ZnO films have been prepared by doping with Group III (Al, Ga, In and B), Group IV (Si, Ge, Ti, Zr and Hf) and a Group VII element (F substituted at an oxygen site), giving rise to a wide range of electrical conductivities 2.OXYGEN REDUCTION Removal of an oxygen atom from a metal oxide leaves two extra electrons in the crystal. Whether one or both of these electrons become free carriers or remain localized at the vacancy site correlates with the oxide free energy of formation. In light metal oxides, such as CaO or Al2O3, where the formation energy is high, oxygen vacancies create deep charge localized states within the electronic band gap known as color or F centers.
Festkörper Probleme: Plenary Lectures of the Divisions Semiconductor Physics, Surface Physics, Low Temperature Physics, High Polymers, Thermodynamics and Statistical Mechanics, of the German Physical Society, Münster, March 19–24, 1973