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THRU
2N6398
Description
* Driven directly with IC and MOS device
* Feature proprietary, void-free glass passivated chips
* Available in voltage ratings from 100 to 600 volts
* Non-sensitive gate trigger current
* Designed for high volume, line-powered control
application in relay lamp drivers, small motor controls,
gate drivers for large thyristors
TO-220AB
Pinning
1 = Cathode, 2 = Anode, 3 = Gate
Rating
VDRM,
VRRM
100
200
400
600
IT(RMS)
12
.055(1.40)
.045(1.14)
ITSM
100
.037(0.95)
.030(0.75)
IGM
2.0
PGM
20
2N6395
2N6396
2N6397
2N6398
PG(AV)
0.5
TJ
-40 to +110
TSTG
-40 to +150
Unit
.625(15.87)
.570(14.48)
Symbol
.055(1.39)
.045(1.15)
.295(7.49)
.220(5.58)
.185(4.70)
.173(4.40)
.405(10.28)
.380(9.66)
.151
Typ
(3.83)
.350(8.90)
.330(8.38)
1
.640 Typ
(16.25)
.562(14.27)
.500(12.70)
.024(0.60)
.014(0.35)
.100
Typ
(2.54)
W
o
Electrical Characteristics
o
Symbol
TJ=25oC
TJ=110oC
IDRM, IRRM
Min
Typ
Max
10
2000
Unit
Test Conditions
VTM
2.2
IGT
20
mA
VGT
2.0
IH
50
mA
DC Holding Current
Critical Rate-of-Rise of Off-State Voltage
Gate Controlled Turn-on Time(tD+tR)
Thermal Resistance, Junction to Case
ITM=12A Peak
VAK=7V DC, RL=100
VAK=7V DC, RL=100
RGK=1K
dv/dt
50
V/S
RGK=1K
Tgt
2.2
sec
IGT=10mA
RJC
2.0
C/W