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SEMICONDUCTOR TECHNICAL DATA by P2N2222A/D

 

NPN Silicon
COLLECTOR

1

2
BASE

3
EMITTER

MAXIMUM RATINGS
Rating Symbol Value Unit 1
2
Collector – Emitter Voltage VCEO 40 Vdc 3

Collector – Base Voltage VCBO 75 Vdc

CASE 29–04, STYLE 17
Emitter – Base Voltage VEBO 6.0 Vdc TO–92 (TO–226AA)
Collector Current — Continuous IC 600 mAdc
Total Device Dissipation @ TA = 25°C PD 625 mW
Derate above 25°C 5.0 mW/°C
Total Device Dissipation @ TC = 25°C PD 1.5 Watts
Derate above 25°C 12 mW/°C
Operating and Storage Junction TJ, Tstg – 55 to +150 °C
Temperature Range

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient RqJA 200 °C/W
Thermal Resistance, Junction to Case RqJC 83.3 °C/W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage V(BR)CEO 40 — Vdc
(IC = 10 mAdc, IB = 0)
Collector – Base Breakdown Voltage V(BR)CBO 75 — Vdc
(IC = 10 mAdc, IE = 0)
Emitter – Base Breakdown Voltage V(BR)EBO 6.0 — Vdc
(IE = 10 mAdc, IC = 0)
Collector Cutoff Current ICEX — 10 nAdc
(VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
Collector Cutoff Current ICBO µAdc
(VCB = 60 Vdc, IE = 0) — 0.01
(VCB = 60 Vdc, IE = 0, TA = 150°C) — 10
Emitter Cutoff Current IEBO — 10 nAdc
(VEB = 3.0 Vdc, IC = 0)
Collector Cutoff Current ICEO — 10 nAdc
(VCE = 10 V)
Base Cutoff Current IBEX — 20 nAdc
(VCE = 60 Vdc, VEB(off) = 3.0 Vdc)

Motorola Small–Signal Transistors, FETs and Diodes Device Data 1

 Motorola, Inc. 1996
P2N2222A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain hFE —
(IC = 0.1 mAdc, VCE = 10 Vdc) 35 —
(IC = 1.0 mAdc, VCE = 10 Vdc) 50 —
(IC = 10 mAdc, VCE = 10 Vdc) 75 —
(IC = 10 mAdc, VCE = 10 Vdc, TA = –55°C) 35 —
(IC = 150 mAdc, VCE = 10 Vdc)(1) 100 300
(IC = 150 mAdc, VCE = 1.0 Vdc)(1) 50 —
(IC = 500 mAdc, VCE = 10 Vdc)(1) 40 —
Collector – Emitter Saturation Voltage(1) VCE(sat) Vdc
(IC = 150 mAdc, IB = 15 mAdc) — 0.3
(IC = 500 mAdc, IB = 50 mAdc) — 1.0
Base – Emitter Saturation Voltage(1) VBE(sat) Vdc
(IC = 150 mAdc, IB = 15 mAdc) 0.6 1.2
(IC = 500 mAdc, IB = 50 mAdc) — 2.0

SMALL– SIGNAL CHARACTERISTICS

Current – Gain — Bandwidth Product(2) fT 300 — MHz
(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)
Output Capacitance Cobo — 8.0 pF
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance Cibo — 25 pF
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Input Impedance hie kΩ
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2.0 8.0
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 0.25 1.25
Voltage Feedback Ratio hre X 10– 4
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) — 8.0
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) — 4.0
Small–Signal Current Gain hfe —
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 50 300
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 75 375
Output Admittance hoe mmhos
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 5.0 35
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 25 200
Collector Base Time Constant rb′Cc — 150 ps
(IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz)
Noise Figure NF — 4.0 dB
(IC = 100 mAdc, VCE = 10 Vdc, RS = 1.0 kΩ, f = 1.0 kHz)

SWITCHING CHARACTERISTICS
Delay Time (VCC = 30 Vdc, VBE(off) = –2.0 Vdc, td — 10 ns
Rise Time IC = 150 mAdc, IB1 = 15 mAdc) (Figure 1) tr — 25 ns
Storage Time (VCC = 30 Vdc, IC = 150 mAdc, ts — 225 ns
IB1 = IB2 = 15 mAdc) (Figure 2)
Fall Time tf — 60 ns

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

2. fT is defined as the frequency at which |hfe| extrapolates to unity.

2 Motorola Small–Signal Transistors, FETs and Diodes Device Data

 P2N2222A
SWITCHING TIME EQUIVALENT TEST CIRCUITS

+ 30 V + 30 V
1.0 to 100 µs, 1.0 to 100 µs, 200
200
+16 V DUTY CYCLE ≈ 2.0%
+16 V DUTY CYCLE ≈ 2.0%

0 0
1 kΩ –14 V 1k CS* < 10 pF
–2 V CS* < 10 pF
< 2 ns < 20 ns
1N914

Scope rise time < 4 ns –4 V

*Total shunt capacitance of test jig,
connectors, and oscilloscope.
Figure 1. Turn–On Time Figure 2. Turn–Off Time

1000
700
500 TJ = 125°C
hFE , DC CURRENT GAIN

300
200
25°C
100
70
–55°C
50
30 VCE = 1.0 V
20 VCE = 10 V

10
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 700 1.0 k
IC, COLLECTOR CURRENT (mA)

Figure 3. DC Current Gain

VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)

1.0
TJ = 25°C
0.8

0.6 IC = 1.0 mA 10 mA 150 mA 500 mA

0.4

0.2

0
0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50
IB, BASE CURRENT (mA)

Figure 4. Collector Saturation Region

Motorola Small–Signal Transistors, FETs and Diodes Device Data 3

P2N2222A
200 500
IC/IB = 10 VCC = 30 V
300 IC/IB = 10
100 TJ = 25°C
200 t′s = ts – 1/8 tf IB1 = IB2
70 tr @ VCC = 30 V
50 TJ = 25°C
td @ VEB(off) = 2.0 V
100
td @ VEB(off) = 0
t, TIME (ns)

30

t, TIME (ns)
70
20 tf
50
30
10
7.0 20
5.0
10
3.0 7.0
2.0 5.0
5.0 7.0 10 20 30 50 70 100 200 300 500 5.0 7.0 10 20 30 50 70 100 200 300 500
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 5. Turn – On Time Figure 6. Turn – Off Time

10 10
RS = OPTIMUM f = 1.0 kHz
IC = 1.0 mA, RS = 150 Ω RS = SOURCE
8.0 RS = RESISTANCE 8.0
500 µA, RS = 200 Ω IC = 50 µA
NF, NOISE FIGURE (dB)

NF, NOISE FIGURE (dB)

100 µA, RS = 2.0 kΩ 100 µA
6.0 50 µA, RS = 4.0 kΩ 6.0 500 µA
1.0 mA

4.0 4.0

2.0 2.0

0 0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (OHMS)

Figure 7. Frequency Effects Figure 8. Source Resistance Effects

f T, CURRENT–GAIN BANDWIDTH PRODUCT (MHz)

30 500
VCE = 20 V
20 TJ = 25°C
300
Ceb
CAPACITANCE (pF)

10 200

7.0

5.0
100
Ccb
3.0 70

2.0 50
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)

Figure 9. Capacitances Figure 10. Current–Gain Bandwidth Product

4 Motorola Small–Signal Transistors, FETs and Diodes Device Data

 P2N2222A
1.0 +0.5
TJ = 25°C

0.8 0 RqVC for VCE(sat)

COEFFICIENT (mV/ °C)

V, VOLTAGE (VOLTS)

VBE(sat) @ IC/IB = 10
1.0 V – 0.5
0.6
VBE(on) @ VCE = 10 V – 1.0
0.4
– 1.5

0.2
– 2.0 RqVB for VBE
VCE(sat) @ IC/IB = 10
0 – 2.5
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 11. “On” Voltages Figure 12. Temperature Coefficients

Motorola Small–Signal Transistors, FETs and Diodes Device Data 5

P2N2222A
PACKAGE DIMENSIONS

NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
A B
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
R 4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
P MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
L
SEATING F
PLANE K INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.175 0.205 4.45 5.20
D B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
J D 0.016 0.022 0.41 0.55
X X F 0.016 0.019 0.41 0.48
G G 0.045 0.055 1.15 1.39
H H 0.095 0.105 2.42 2.66
SECTION X–X J 0.015 0.020 0.39 0.50
V C K 0.500 ––– 12.70 –––
L 0.250 ––– 6.35 –––
N 0.080 0.105 2.04 2.66
1 N P ––– 0.100 ––– 2.54
R 0.115 ––– 2.93 –––
N V 0.135 ––– 3.43 –––

STYLE 17:
CASE 029–04 PIN 1. COLLECTOR
2. BASE
(TO–226AA) 3. EMITTER
ISSUE AD

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*P2N2222A/D*
6 ◊ P2N2222A/D
Motorola Small–Signal Transistors, FETs and Diodes Device Data