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SPP12N50C3 SPI12N50C3, SPA12N50C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology •

SPP12N50C3

SPI12N50C3, SPA12N50C3

Cool MOS™ Power Transistor

Feature

New revolutionary high voltage technology

Ultra low gate charge

Periodic avalanche rated

Extreme dv/dt rated

Ultra low effective capacitances

Improved transconductance

P G-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)

V DS @ T jmax

560

V

R DS(on)

0.38

I

D

11.6

A

P G -TO262-

P G -TO220

P

G -TO220-3-31

2 2 3 2 3 1 1 P-TO220-3-31 P-TO220-3-1
2
2 3
2 3
1
1
P-TO220-3-31
P-TO220-3-1
G -TO2 20-3-31 2 2 3 2 3 1 1 P-TO220-3-31 P-TO220-3-1 Type Package Ordering Code

Type

Package

Ordering Code

Marking

SPP12N50C3

P

G -TO220

Q67040-S4579

12N50C3

SPI12N50C3

P

G -TO262

Q67040-S4578

12N50C3

SPA12N50C3

P

G -TO220FP

SP000216322

12N50C3

SPA12N50C3 P G -TO220 FP SP000216322 12N50C3 Maximum Ratings Parameter Symbol Value Unit

Maximum Ratings

Parameter

Symbol

Value

Unit

SPP_I

SPA

Continuous drain current

I

D

   

A

T C = 25 °C T C = 100 °C

 

11.6

11.6 1)

7

7 1)

Pulsed drain current, t p limited by T jmax

I D puls

34.8

34.8

A

Avalanche energy, single pulse

E

AS

340

340

mJ

I D =5.5A, V DD =50V

Avalanche energy, repetitive t AR limited by T jmax 2)

E

AR

0.6

0.6

I D =11.6A, V DD =50V

Avalanche current, repetitive t AR limited by T jmax

I AR

11.6

11.6

A

Gate Gate source source voltage voltage

V

GS

±20

±20

V

Gate source voltage AC (f >1Hz)

V

GS

±30

±30

 

Power dissipation, T C = 25°C

P

tot

125

33

W

Operating and storage temperature

T j , T stg

-55

+150

°C

Reverse diode dv/dt

7)

dv/dt

15

V/ns

SPP12N50C3 SPI12N50C3, SPA12N50C3

SPP12N50C3

SPI12N50C3, SPA12N50C3

Maximum Ratings

Parameter

Symbol

 

Value

Unit

Drain Source voltage slope

dv/dt

 

50

V/ns

V DS = 400 V, I D = 11.6 A, T j = 125 °C

 

Thermal Characteristics

Parameter

Symbol

 

Values

Unit

min.

typ.

max.

Thermal resistance, junction - case

R

thJC

-

-

1

K/W

Thermal resistance, junction - case, FullPAK

 

R

thJC_FP

-

-

3.8

Thermal resistance, junction - ambient, leaded

R

thJA

-

-

62

Thermal resistance, junction - ambient, FullPAK

R

thJA_FP

-

-

80

SMD version, device on PCB:

R

thJA

     

@ min. footprint

-

-

62

@ 6 cm 2 cooling area 3)

-

35

-

Soldering temperature, wavesoldering 1.6 mm (0.063 in.) from case for 10s 4)

 

T

sold

-

-

260

°C

Electrical Characteristics, at T j =25°C unless otherwise specified

 

Parameter

Symbol

Conditions

 

Values

Unit

min.

typ.

max.

Drain-source breakdown voltage

V

(BR)DSS

GS =0V, I D =0.25mA

V

500

-

-

V

Drain-Source avalanche breakdown voltage

V

(BR)DS

GS =0V, I D =11.6A

V

-

600

-

Gate threshold voltage

V

GS(th)

I D =500µA, V GS =V DS

2.1

3

3.9

Zero gate voltage drain current

I DSS

DS =500V, V GS =0V,

V

     

µA

T

j

=25°C

-

0.1

1

T

j

=150°C

-

- 100

Gate-source leakage current

I GSS

GS =20V, V DS =0V

V

-

 

- 100

nA

Drain-source on-state resistance

R

DS(on)

GS =10V, I D =7A

V

     

T

j

=25°C

-

0.34

0.38

T

j

=150°C

-

0.92

-

Gate input resistance

R

G

f=1MHz, open drain

-

1.4

-

SPP12N50C3 SPI12N50C3, SPA12N50C3

SPP12N50C3

SPI12N50C3, SPA12N50C3

Electrical Characteristics, at T j = 25 °C, unless otherwise specified

Parameter

Symbol

Conditions

 

Values

Unit

min.

typ.

max.

Characteristics

Transconductance

g fs

V DS 2*I D *R DS(on)max ,

-

8

-

S

I D =7A

Input capacitance

C

iss

V GS =0V, V DS =25V,

-

1200

-

pF

Output capacitance

C

oss

f=1MHz

-

400

-

Reverse transfer capacitance

C

rss

-

30

-

Effective output capacitance, 5) energy related

C

o(er)

V GS =0V,

-

45

-

V DS =0V to 400V

Effective output capacitance, 6) time related

C

o(tr)

-

92

-

Turn-on delay time

t

d(on)

V DD =380V, V GS =0/10V,

-

10

-

ns

Rise time

t

r

I D =11.6A, R G =6.8

-

8

-

Turn-off delay time

t

d(off)

-

45

-

Fall time

t

f

-

8

-

Gate Charge Characteristics

Gate to source charge

Q

gs

V DD =400V, I D =11.6A

-

5

-

nC

Gate to drain charge

Q

gd

-

26

-

Gate charge total

Q

g

V DD =400V, I D =11.6A,

-

49

-

V GS =0 to 10V

Gate plateau voltage

V

(plateau)

V DD =400V, I D =11.6A

-

5

-

V

V D D =400V, I D =11.6A - 5 - V 1 Limited only by maximum

1 Limited only by maximum temperature

2 Repetitve avalanche causes additional power losses that can be calculated asP AV =E AR *f.

3 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.

4 Soldering temperature for TO-263: 220°C, reflow

5 C o(er) is a fixed capacitance that gives the same stored energy as C oss while V DS is rising from 0 to 80% V DSS .

6 C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS .

7 I SD <=I D , di/dt<=400A/us, V DClink =400V, V peak <V BR, DSS , T j <T j,max . Identical low-side and high-side switch.

SPP12N50 C3 SPI12N50C3, SPA12N50C3 Electrical Characteristics Parameter Symbol Conditions Values Unit min. typ.

SPP12N50 C3 SPI12N50C3, SPA12N50C3

Electrical Characteristics

Parameter Symbol Conditions Values Unit min. typ. max. Inverse diode continuous T C =25°C -
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Inverse diode continuous
T
C =25°C
-
-
11.6
A
I S
forward current
Inverse diode direct current,
I
-
-
34.8
SM
pulsed
Inverse diode forward voltage
V
V
GS =0V, I F =I S
-
1
1.2
V
SD
Reverse recovery time
t
V
R =400V, I F =I S ,
-
380
-
ns
rr
Reverse recovery charge
di
F /dt=100A/µs
-
5.5
-
µC
Q rr
Peak reverse recovery current
I
-
38
-
A
rrm
Peak rate of fall of reverse
di
rr /dt
T
=25°C
-
1100
-
A/µs
j
recovery current
Typical Transient Thermal Characteristics
Symbol
Value
Unit
Symbol
Value
Unit
SPP_I
SPA
SPP_I
SPA
R
0.015
0.15
K/W
C
0.0001878
0.0001878
Ws/K
th1
th1
R
0.03
0.03
C
0.0007106
0.0007106
th2
th2
R
0.056
0.056
C
0.000988
0.000988
th3
th3
R
0.197
0.194
C
0.002791
0.002791
th4
th4
R
0.216
0.413
C
0.007285
0.007401
th5
th5
R
0.083
2.522
C
0.063
0.412
th6
th6
External Heatsink
T j
T
R th1
R th,n
case
P tot (t)
C th1
C th2
C th,n
T
amb
SPP12N50C 3 SPI12N50C3, SPA12N50C3

SPP12N50C 3 SPI12N50C3, SPA12N50C3

1 Power dissipation P tot = f (T C )

SPP12N50C3

140 W 120 110 100 90 80 70 60 50 40 30 20 10 0
140
W
120
110
100
90
80
70
60
50
40
30
20
10
0
0
20
40
60
80
100
120
°C
160
T C
P
tot

3 Safe operating area

I D = f ( V DS ) parameter : D = 0 , T C =25°C

2 10 A 1 10 0 10 tp = 0.001 ms tp = 0.01 ms
2
10
A
1
10
0
10
tp =
0.001 ms
tp =
0.01 ms
tp =
0.1
ms
tp =
1
ms
-1
10
DC
-2
10
10 0
10 1
10 2
V
10 3
V DS
I
D

2 Power dissipation FullPAK P tot = f (T C )

36 W 28 24 20 16 12 8 4 0 0 20 40 60 80
36
W
28
24
20
16
12
8
4
0
0
20
40
60
80
100
120
°C
160
P
tot

T C T C

4 Safe operating area FullPAK

I D = f (V DS ) parameter: D = 0, T C = 25°C

2 10 A 1 10 0 10 tp = 0.001 ms tp = 0.01 ms
2
10
A
1
10
0
10
tp =
0.001 ms
tp =
0.01 ms
tp =
0.1
ms
tp =
1
ms
-1
10
tp =
10
ms
DC
-2
10
10 0
10 1
10 2
V
10 3
V DS
I
D
SPP12N50 C3 SPI12N50C3, SPA12N50C3

SPP12N50C3

SPI12N50C3, SPA12N50C3

5 Transient thermal impedance

Z thJC = f (t p ) parameter: D = t p /T 10 1
Z thJC = f (t p )
parameter: D = t p /T
10 1
K/W
0
10
-1
10
D
= 0.5
-2
10
D
= 0.2
D
= 0.1
D
= 0.05
D
= 0.02
-3
D
= 0.01
10
single pulse
-4
10
10 -7
10 -6
10 -5
10 -4
10 -3
s 10 -1
Z
thJC

-4 10 10 -7 10 -6 10 -5 10 -4 10 -3 s 10 -1 Z

t p

7 Typ. output characteristic

I D = f (V DS ); T j =25°C

parameter: t p = 10 µs, V GS

40 20V A 10V 8V 32 7V 28 6.5V 24 20 6V 16 12 5.5V
40
20V
A
10V
8V
32
7V
28
6.5V
24
20
6V
16
12
5.5V
8
5V
4
4.5V
0
0
5
10
15
V
25
V DS
I
D

6 Transient thermal impedance FullPAK

Z thJC = f (t p ) parameter: D = t p /t 10 1
Z thJC = f (t p )
parameter: D = t p /t
10 1
K/W
0
10
-1
10
D
=
0.5
D
=
0.2
D
=
0.1
-2
10
D
=
0.05
D
=
0.02
D
=
0.01
single pulse
-3
10
-4
10
10 -7
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1
s 10 1
Z
thJC

10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 1 Z

t p

8 Typ. output characteristic

I D = f (V DS ); T j =150°C

parameter: t p = 10 µs, V GS

22 A 20V 8V 7.5V 18 7V 6V 16 14 5.5V 12 10 5V 8
22
A
20V
8V
7.5V
18
7V
6V
16
14
5.5V
12
10
5V
8
6
4.5V
4
4V
2
0
0
5
10
15
V
25
V DS
I
D
SPP12N50C 3 SPI12N50C3, SPA12N50C3

SPP12N50C 3 SPI12N50C3, SPA12N50C3

9 Typ. drain-source on resistance

R DS(on) =f(I D )

parameter: T j =150°C, V GS

2 Ω 4V 4.5V 5V 6V 1.6 5.5V 1.4 1.2 1 0.8 6.5V 0.6 8V
2
4V
4.5V
5V
6V
1.6
5.5V
1.4
1.2
1
0.8
6.5V
0.6
8V
20V
0.4
0
2
4
6
8
10
12
14
16
A
20
I D
R
DS(on)

11 Typ. transfer characteristics

I D = f ( V GS ); V DS 2 x I D x R DS(on)max

parameter: t p = 10 µs

40 A 25°C 32 28 24 150°C 20 16 12 8 4 0 0 1
40
A
25°C
32
28
24
150°C
20
16
12
8
4
0
0
1
2
3
4
5
6
7
8
V
10
V GS
I
D

10 Drain-source on-state resistance

R DS(on) = f (T j )

parameter : I D = 7 A, V GS = 10 V

SPP12N50C3 2.1 Ω 1.8 1.6 1.4 1.2 1 0.8 0.6 98% 0.4 typ 0.2 0
SPP12N50C3
2.1
1.8
1.6
1.4
1.2
1
0.8
0.6
98%
0.4
typ
0.2
0
-60
-20
20
60
100
°C
180
T j
R DS(on)

12 Typ. gate charge

V GS = f (Q Gate ) parameter: I D = 11.6 A pulsed

SPP12N50C3

16 V 12 0,2 V DS max 10 0,8 V DS max 8 6 4
16
V
12
0,2 V
DS max
10
0,8 V DS max
8
6
4
2
0
0
10
20
30
40
50
70
nC
V
GS

Q Gate Q Gate

SPP12N50C3 SPI12N50C3, SPA12N50C3

SPP12N50C3

SPI12N50C3, SPA12N50C3

13 Forward characteristics of body diode

I F = f (V SD ) parameter: T j , tp = 10 µs
I F = f (V SD )
parameter: T j , tp = 10 µs
2
SPP12N50C3
10
A
1
10
0
10
T j =
25
°C
typ
T j =
150
°C typ
T j =
25
°C
(98%)
T j =
150
°C (98%)
-1
10
0
0.4
0.8
1.2
1.6
2
2.4
V
3
V
SD
I F

15 Avalanche energy

E AS = f (T j ) par.: I D = 5.5 A, V DD = 50 V

350 mJ 250 200 150 100 50 0 20 40 60 80 100 120 °C
350
mJ
250
200
150
100
50
0
20
40
60
80
100
120
°C
160
T j
E
AS

14 Avalanche SOA

I AR = f (t AR ) par.: T j 150 °C

11 A 9 8 7 6 5 T j (START)=25°C 4 3 T j (START)=125°C
11
A
9
8
7
6
5
T j (START)=25°C
4
3
T j (START)=125°C
2
1
0
10 -3
10 -2
10 -1
10 0
10 1
10 2
µs
10 4
t AR
I
AR

16 Drain-source breakdown voltage

V (BR)DSS = f (T j )

SPP12N50C3

600 V 570 560 550 540 530 520 510 500 490 480 470 460 450
600
V
570
560
550
540
530
520
510
500
490
480
470
460
450
-60
-20
20
60
100
°C
180
T j
V
(BR)DSS
SPP12N50C3 SPI12N50C3, SPA12N50C3

SPP12N50C3

SPI12N50C3, SPA12N50C3

17 Avalanche power losses

P AR = f (f ) parameter: E AR =0.6mJ

300 W 200 150 100 50 0 10 4 10 5 Hz 10 6 P
300
W
200
150
100
50
0
10 4
10 5
Hz
10 6
P AR

f300 W 200 150 100 50 0 10 4 10 5 Hz 10 6 P AR

19 Typ. C oss stored energy

E oss =f(V DS )

6 µJ 4 3 2 1 0 0 100 200 300 V 500 V DS
6
µJ
4
3
2
1
0
0
100
200
300
V
500
V DS
E oss
18 Typ. capacitances C = f (V DS ) parameter: V GS =0V, f=1 MHz
18 Typ. capacitances
C = f (V DS )
parameter: V GS =0V, f=1 MHz
10 4
pF
Ciss
3
10
2
10
Coss
1
10
Crss
0
10
-1
10
0
100
200
300
V
500
V DS
C
SPP12N50C 3 SPI12N50C3, SPA12N50C3

SPP12N50C 3 SPI12N50C3, SPA12N50C3

Definition of diodes switching characteristics

SPP12N50C 3 SPI12N50C3, SPA12N50C3 Definition of diodes switching characteristics Rev. 3. 1 Page 10 200 9
SPP 1 2 N 5 0C3 SPI 1 2 N 5 0C3, SPA 1 2

SPP12N50C3

SPI12N50C3, SPA12N50C3

PG-TO-220-3-1, PG-TO220-3-21

SPP 1 2 N 5 0C3 SPI 1 2 N 5 0C3, SPA 1 2 N
SPP 1 2 N 5 0C3 SPI 1 2 N 5 0C3, SPA 1 2

SPP12N50C3

SPI12N50C3, SPA12N50C3

PG-TO220-3-31/3-111 Fully isolated package (2500VAC; 1 minute)

1 2 N 5 0C3 P G -TO220-3- 3 1 /3-111 Fully isolated package (2500VAC; 1
SPP 1 2 N 5 0C3 SPI 1 2 N 5 0C3, SPA 1 2

SPP12N50C3

SPI12N50C3, SPA12N50C3

PG-TO262-3-1, PG-TO262-3-21 (I²-PAK)

SPI 1 2 N 5 0C3, SPA 1 2 N 5 0C3 P G -TO2 6
SPP12N50C 3 SPI12N50C3, SPA12N50C3

SPP12N50C 3 SPI12N50C3, SPA12N50C3

Published by Infineon Technologies AG 81726 Munich, Germany © 2007 Infineon Technologies AG All Rights Reserved.

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Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com).

Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.