SPP12N50C3

SPI12N50C3, SPA12N50C3
Cool MOS Power Transistor

VDS @ Tjmax

560

RDS(on)

0.38

ID

11.6

Feature
New revolutionary high voltage technology
Ultra low gate charge
Periodic avalanche rated

FP
PG-TO220-3-31
PG-TO262-

PG-TO220

Extreme dv/dt rated

Ultra low effective capacitances

Improved transconductance

23

P-TO220-3-31

P-TO220-3-1

PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)

Type

Package

Ordering Code

SPP12N50C3

PG-TO220

Q67040-S4579

Marking
12N50C3

SPI12N50C3

PG-TO262

Q67040-S4578

12N50C3

SPA12N50C3

PG-TO220FP

SP000216322

12N50C3

Maximum Ratings

SPP_I

Continuous drain current

Unit

Value

Symbol

Parameter

SPA

ID

TC = 25 C

11.6

11.6 1)

TC = 100 C

71)

ID puls

34.8

34.8

EAS

340

340

mJ

EAR

0.6

0.6

Avalanche current, repetitive tAR limited by Tjmax

IAR

11.6

11.6

Gate source voltage

VGS

20

20

Gate source voltage AC (f >1Hz)

VGS

30

30

Power dissipation, TC = 25C

Ptot

125

33

Operating and storage temperature

Reverse diode dv/dt 7)

T j , Tstg
dv/dt

Pulsed drain current, tp limited by Tjmax

Avalanche energy, single pulse
ID=5.5A, VDD =50V

Avalanche energy, repetitive tAR limited by Tjmax2)

ID=11.6A, VDD=50V

Rev. 3.1

Page 1

-55...+150
15

C
V/ns

2009-11-30

SPP12N50C3
SPI12N50C3, SPA12N50C3
Maximum Ratings
Parameter

Symbol

Drain Source voltage slope

dv/dt

Value

Unit

50

V/ns

Values

Unit

V DS = 400 V, ID = 11.6 A, Tj = 125 C

Thermal Characteristics
Symbol

Parameter

min.

typ.

max.

Thermal resistance, junction - case

RthJC

Thermal resistance, junction - case, FullPAK

RthJC_FP

3.8

Thermal resistance, junction - ambient, leaded

RthJA

62

Thermal resistance, junction - ambient, FullPAK

RthJA_FP

80

SMD version, device on PCB:

RthJA

@ min. footprint

62

@ 6 cm 2 cooling area 3)

35

260

Soldering temperature, wavesoldering

Tsold

K/W

1.6 mm (0.063 in.) from case for 10s 4)

Electrical Characteristics, at T j=25C unless otherwise specified

Symbol
Conditions
Parameter
Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA
Drain-Source avalanche
V(BR)DS VGS=0V, ID=11.6A

Values

Unit

min.

typ.

max.

500

600

2.1

3.9

breakdown voltage
Gate threshold voltage

VGS(th)

ID=500A, VGS=VDS

Zero gate voltage drain current

I DSS

VDS=500V, VGS=0V,

Gate-source leakage current

I GSS

Drain-source on-state resistance RDS(on)

Gate input resistance

Rev. 3.1

RG

Tj=25C

0.1

Tj=150C

100

VGS=20V, VDS=0V

100

VGS=10V, ID=7A
Tj=25C

0.34

0.38

Tj=150C

0.92

f=1MHz, open drain

1.4

Page 2

nA

2009-11-30

SPP12N50C3
SPI12N50C3, SPA12N50C3
Electrical Characteristics, at Tj = 25 C, unless otherwise specified
Parameter

Symbol

Conditions

Values

Unit

min.

typ.

max.

S
pF

Characteristics
Transconductance

g fs

V DS2*I D*RDS(on)max,
ID=7A

Input capacitance

Ciss

V GS=0V, V DS=25V,

1200

Output capacitance

Coss

f=1MHz

400

Reverse transfer capacitance

Crss

30

45

92

Effective output capacitance,5) Co(er)

V GS=0V,

energy related

V DS=0V to 400V

Effective output capacitance,6) Co(tr)

time related
Turn-on delay time

td(on)

V DD=380V, V GS=0/10V,

10

Rise time

tr

ID=11.6A, R G=6.8

Turn-off delay time

td(off)

45

Fall time

tf

26

49

ns

Gate Charge Characteristics

Gate to source charge

Qgs

Gate to drain charge

Qgd

Gate charge total

Qg

VDD=400V, ID=11.6A

VDD=400V, ID=11.6A,

nC

VGS=0 to 10V

Gate plateau voltage

V(plateau) VDD=400V, ID=11.6A

1Limited only by maximum temperature

2Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f.
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain
connection. PCB is vertical without blown air.
4Soldering temperature for TO-263: 220C, reflow
5C
o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V DSS.
6C
is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V
.
o(tr)

DSS

7I <=I , di/dt<=400A/us, V
SD
D
DClink=400V, Vpeak<VBR, DSS, Tj<Tj,max.
Identical low-side and high-side switch.

Rev. 3.1

Page 3

2009-11-30

SPP12N50C3
SPI12N50C3, SPA12N50C3
Electrical Characteristics
Symbol

Parameter
Inverse diode continuous

IS

Conditions

Values

Unit

min.

typ.

max.

11.6

34.8

TC=25C

forward current
Inverse diode direct current,

ISM

pulsed
Inverse diode forward voltage

VSD

VGS=0V, IF=IS

1.2

Reverse recovery time

trr

VR=400V, IF=IS ,

380

ns

Reverse recovery charge

Qrr

diF/dt=100A/s

5.5

Peak reverse recovery current

Irrm

38

Peak rate of fall of reverse

dirr /dt

1100

A/s

Tj=25C

recovery current
Typical Transient Thermal Characteristics
Symbol

Value
SPP_I

Unit

Symbol

SPA

Rth1

0.015

0.15

Rth2

0.03

Rth3

Value
SPP_I

SPA

Cth1

0.0001878

0.0001878

0.03

Cth2

0.0007106

0.0007106

0.056

0.056

Cth3

0.000988

0.000988

Rth4

0.197

0.194

Cth4

0.002791

0.002791

Rth5

0.216

0.413

Cth5

0.007285

0.007401

Rth6

0.083

2.522

Cth6

0.063

0.412

Tj

K/W

Unit

R th1

R th,n

T case

Ws/K

E xternal H eatsink

P tot (t)
C th1

C th2

C th,n
T am b

Rev. 3.1

Page 4

2009-11-30

SPP12N50C3
SPI12N50C3, SPA12N50C3
1 Power dissipation

2 Power dissipation FullPAK

Ptot = f (TC)

Ptot = f (TC)

140

SPP12N50C3

36

120
110

28
24

Ptot

Ptot

100
90
80

20

70
16

60
50

12

40
8

30
20

10
0
0

20

40

60

80

100

120

0
0

160

20

40

60

80

100

120

TC

160

TC

3 Safe operating area

4 Safe operating area FullPAK

ID = f ( V DS )

ID = f (VDS)

parameter : D = 0 , TC =25C

parameter: D = 0, TC = 25C

10

10 2

10 1

10 1

ID

ID

10 0

10 -1

10 -2 0
10

Rev. 3.1

10 0

tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
DC

10

10 -1

10

V
VDS

10

10 -2 0
10

Page 5

tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
tp = 10 ms
DC

10

10

10
V
VDS

209-11-30

SPP12N50C3
SPI12N50C3, SPA12N50C3
5 Transient thermal impedance

6 Transient thermal impedance FullPAK

ZthJC = f (t p)

ZthJC = f (t p)

parameter: D = tp/T

parameter: D = tp/t

10

10 1

K/W

K/W
10 0

ZthJC

ZthJC

10 0

10 -1

D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse

10 -2

10 -3

10 -4 -7
10

10

-6

10

-5

10

-4

10

-3

s
tp

10 -1

D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse

10 -2

10 -3

10

10 -4 -7
-6
-5
-4
-3
-2
-1
10
10
10
10
10
10
10

-1

tp

7 Typ. output characteristic

8 Typ. output characteristic

ID = f (VDS); Tj=25C

ID = f (VDS); Tj=150C

parameter: tp = 10 s, VGS

parameter: tp = 10 s, VGS

40

22

20V
10V
8V

20V
8V
7.5V
7V

A
18

7V

32

6V

16

ID

28

ID

1
s 10

6.5V

24

14
5.5V

12
20
6V

10

16

5V

8
5.5V

12

8
5V

4
0
0

4V

2
4.5V

10

15

0
0

25

10

15

25

VDS

VDS

Rev. 3.1

4.5V

Page 6

2009-011-30

SPP12N50C3
SPI12N50C3, SPA12N50C3
9 Typ. drain-source on resistance

10 Drain-source on-state resistance

RDS(on)=f(ID)

RDS(on) = f (Tj)

parameter: Tj=150C, VGS

parameter : ID = 7 A, VGS = 10 V
2.1

1.8
4V

4.5V

5V

6V

5.5V

RDS(on)

RDS(on)

1.6

SPP12N50C3

1.4

1.6
1.4
1.2

1.2

1
0.8

0.6

0.8

98%

6.5V
8V
20V

0.6

0.4
0

0.4

10

12

14

typ

0.2
16

A
ID

0
-60

20

-20

20

60

100

180

Tj

11 Typ. transfer characteristics

12 Typ. gate charge

ID= f ( VGS ); VDS 2 x ID x RDS(on)max

VGS = f (Q Gate)
parameter: ID = 11.6 A pulsed

parameter: tp = 10 s

40

16

SPP12N50C3

25C

32

ID

24

150C

VGS

12
28

20

0,2 VDS max

10

0,8 VDS max

16

12
4
8
2

4
0
0

Rev. 3.1

0
0

V 10
VGS

10

20

30

40

50

nC

70

Q Gate

Page 7

2009-11-30

SPP12N50C3
SPI12N50C3, SPA12N50C3
13 Forward characteristics of body diode

14 Avalanche SOA

IF = f (VSD)

IAR = f (tAR)

parameter: Tj , tp = 10 s

par.: Tj 150 C

2 SPP12N50C3

10

11

A
A
9
8

IF

IAR

10 1

7
6
5

T j(START) =25C

10 0
Tj = 25 C typ

T j(START) =125C

Tj = 150 C typ

10 -1
0

0.4

0.8

Tj = 25 C (98%)

Tj = 150 C (98%)

1.2

1.6

2.4 V

0 -3
10

10

-2

10

-1

10

10

10

4
s 10
tAR

VSD

15 Avalanche energy

16 Drain-source breakdown voltage

EAS = f (Tj)

V(BR)DSS = f (Tj)

par.: ID = 5.5 A, V DD = 50 V
350

600

SPP12N50C3

V(BR)DSS

mJ

EAS

250

200

570
560
550
540
530
520

150

510
500

100

490
480

50

470
460

0
20

40

60

80

100

120

450
-60

160

Tj

Rev. 3.1

-20

20

60

100

180

Tj
Page 8

2009-11-30

SPP12N50C3
SPI12N50C3, SPA12N50C3
17 Avalanche power losses

18 Typ. capacitances

PAR = f (f )

C = f (VDS)

parameter: E AR=0.6mJ

parameter: V GS=0V, f=1 MHz

10 4

300

pF
Ciss

200
10 2

PAR

10 3

Coss

150
10 1
100

Crss

10 0
50

0 4
10

10

Hz

10

10 -1
0

100

200

300

500

VDS

19 Typ. Coss stored energy

Eoss=f(VDS)
6

Eoss

0
0

100

200

300

500

VDS

Rev. 3.1

Page 9

2009-11-30

SPP12N50C3
SPI12N50C3, SPA12N50C3

Definition of diodes switching characteristics

Rev. 3.1

Page 10

2009-11-30

SPP12N50C3
SPI12N50C3, SPA12N50C3
PG-TO-220-3-1, PG-TO220-3-21

Rev. 3.1

Page 11

2009-11-30

SPP12N50C3
SPI12N50C3, SPA12N50C3
PG-TO220-3-31/3-111 Fully isolated package (2500VAC; 1 minute)

Rev. 3.1

Page 12

2009-11-30

SPP12N50C3
SPI12N50C3, SPA12N50C3
PG-TO262-3-1, PG-TO262-3-21 (I-PAK)

Rev. 3.1

Page 13

2009-11-30

SPP12N50C3
SPI12N50C3, SPA12N50C3

Published by
Infineon Technologies AG
81726 Munich, Germany
2007 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.

Rev. 3.1

Page 14

2009-11-30