PD - 9.

690A

IRGBC40S
INSULATED GATE BIPOLAR TRANSISTOR
Features

Standard Speed IGBT

C

Switching-loss rating includes all "tail" losses

Optimized for line frequency operation ( to 400 Hz)
See Fig. 1 for Current vs. Frequency curve

VCES = 600V
VCE(sat) 1.8V

@VGE = 15V, I C = 31A

n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications.

TO-220AB
Absolute Maximum Ratings
Parameter
VCES
IC @ T C = 25C
IC @ T C = 100C
ICM
ILM
VGE
EARV
PD @ T C = 25C
PD @ T C = 100C
TJ
TSTG

Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.

Max.

Units

600
50
31
240
100
20
15
160
65
-55 to +150

V
A

V
mJ
W

C
300 (0.063 in. (1.6mm) from case)
10 lbfin (1.1Nm)

Thermal Resistance
Parameter
RJC
RCS
RJA
Wt

Junction-to-Case
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight

Min.

Typ.

Max.

0.50

2.0 (0.07)

0.77

80

Units
C/W
g (oz)
Revision 0

C-15

IRGBC40S
Electrical Characteristics @ TJ = 25C (unless otherwise specified)

VCE(on)

Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage
Temp. Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage

VGE(th)
VGE(th)/TJ
gfe
ICES

Gate Threshold Voltage

Temp. Coeff. of Threshold Voltage
Forward Transconductance
Zero Gate Voltage Collector Current

IGES

Gate-to-Emitter Leakage Current

V(BR)CES
V(BR)ECS
V(BR)CES/TJ

Min. Typ. Max. Units

Conditions
600

V
VGE = 0V, I C = 250A
20

V
VGE = 0V, IC = 1.0A
0.75
V/C VGE = 0V, I C = 1.0mA

1.6
1.8
IC = 31A
V GE = 15V

2.2

V
IC = 60A
See Fig. 2, 5

1.7

IC = 31A, T J = 150C
3.0

5.5
VCE = VGE, IC = 250A

-9.3
mV/C VCE = VGE, IC = 250A
12
21

S
VCE = 100V, I C = 31A

250
A
VGE = 0V, V CE = 600V

1000
VGE = 0V, V CE = 600V, T J = 150C

100 nA
VGE = 20V

Switching Characteristics @ TJ = 25C (unless otherwise specified)

Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres

Min.

Typ. Max. Units

Conditions
62
90
IC = 31A
10
15
nC
VCC = 400V
See Fig. 8
27
40
VGE = 15V
28

TJ = 25C
50

ns
IC = 31A, V CC = 480V
1100 1500
VGE = 15V, R G = 10
620 1100
Energy losses include "tail"
1.0

12

mJ
See Fig. 9, 10, 11, 14
13
20
29

TJ = 150C,
53

ns
IC = 31A, V CC = 480V
1600
VGE = 15V, R G = 10
1200
Energy losses include "tail"
22

mJ
See Fig. 10, 14
7.5

nH
Measured 5mm from package
1600
VGE = 0V
140

pF
VCC = 30V
See Fig. 7
20

= 1.0MHz

Notes:
Repetitive rating; V GE=20V, pulse width
limited by max. junction temperature.
( See fig. 13b )

Repetitive rating; pulse width limited

by maximum junction temperature.

VCC=80%(V CES), VGE=20V, L=10H,

R G= 10, ( See fig. 13a )

Pulse width 80s; duty factor 0.1%.

C-16

Pulse width 5.0s,

single shot.

IRGBC40S
60

LO A D C U R R E N T (A )

Fo r bo th:

Tria ngu lar w av e:

D uty c yc le: 50%

T J = 125 C
T s in k = 90C
G ate d riv e as s pec ified
P o w e r D issip a tion = 2 8 W

40

C lam p voltage:
80% of ra ted

S qu are w ave :
60% of rated
voltage

20

Ideal diodes

0
0.1

10

100

f, F re quency (kH z)

Fig. 1 - Typical Load Current vs. Frequency

(For square wave, I=I RMS of fundamental; for triangular wave, I=I PK)

1000

IC , C ollector-to-E mitter C urrent (A )

I C , Collector-to-E m itter C urrent (A)

1000

TJ = 25 C
100

TJ = 15 0C

10

V G E = 15 V
20 s P UL S E W ID TH

1
0.1

TJ = 25 C
TJ = 1 50 C
100

10

V C C = 1 00 V
5 s P UL S E W IDTH

1
5

10

10

15

V G E , G ate -to-E m itter V olta ge (V )

V C E , C o llector-to-Em itter V oltage (V)

Fig. 3 - Typical Transfer Characteristics

Fig. 2 - Typical Output Characteristics

C-17

20

IRGBC40S
3.0

V G E = 15 V
LIMITED BY PACKAGE

60

V CE , Collector-to-E m itter V oltage (V)

M a xim u m D C C o llec to r C urren t (A )

70

50

40

30

20

10

VG E = 1 5 V
80 s P UL S E W ID TH
I C = 62 A

2.5

2.0

I C = 31 A

1.5

I C = 1 6A

1.0

0
25

50

75

100

1 25

-60

150

T C , C as e T em pe ra ture (C )

-40

-20

20

40

60

80

1 00 120 140 160

TC , C ase Tem perature (C )

Fig. 5 - Collector-to-Emitter Voltage vs.

Case Temperature

Fig. 4 - Maximum Collector Current vs.

Case Temperature

T herm al Response (Z th JC )

D = 0 .5 0

0.2 0

0.1
0.1 0

PD M

0 .05

0.0 2

t2
N o te s:
1 . D u ty fa c to r D = t

0.0 1

0.01
0.00001

SIN G LE P UL SE
(TH ER MA L R E SP O NS E )
1

/ t

2 . P e a k TJ = P D M x Z thJ C + T C

0.0001

0.001

0.01

0.1

t 1 , R ectangular Pulse D uration (sec)

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

C-18

10

IRGBC40S
3 0 00

20

V G E , G ate-to-E mitter V oltage (V )

V GE = 0V,
f = 1MHz
C ies = C ge + C gc , Cce SHORTED
C res = C gc
C oes = C ce + C gc

C , C a pac ita nc e (pF )

Cies
2 0 00

Coes

1 0 00

Cres

V C E = 40 0 V
I C = 3 1A

16

12

0
1

10

10 0

10

V C E , C o lle c to r-to -E m itte r V o lta g e (V )

Fig. 7 - Typical Capacitance vs.

Collector-to-Emitter Voltage

VC C
VG E
TC
IC

1 4 .4

30

40

50

60

Fig. 8 - Typical Gate Charge vs.

Gate-to-Emitter Voltage

100

= 4 80 V
= 15 V
= 25 C
= 3 1A

To ta l S w itc hing Lo sse s (m J)

To ta l S w itch in g Losses (m J)

1 4 .6

20

Q g , Total G ate C harge (nC )

1 4 .2

1 4 .0

1 3 .8

1 3 .6

R G = 10
V GE = 15 V
V CC = 4 80 V

I C = 62 A
I C = 31A
I C = 1 6A

10

1 3 .4

1 3 .2

1
0

10

20

30

40

50

60

-60

R G , G ate R es istance ( )

-40

-20

20

40

60

80

100 120 140 160

TC , C ase Tem perature (C )

W

Fig. 9 - Typical Switching Losses vs. Gate

Resistance

Fig. 10 - Typical Switching Losses vs.

Case Temperature

C-19

IRGBC40S
RG
TC
VCC
VGE

40

1000

= 10
= 1 50C
= 48 0V
= 1 5V

I C , C o lle c to r-to -E m itte r C u rre n t (A )

T o ta l S w itc hin g L o s s e s (m J )

50

30

20

10

VGGE E= 20 V
T J = 125 C

100

S A FE O P E R A TING A R E A

10

0
0

10

20

30

40

50

60

70

10

100

V C E , C o lle cto r-to-E m itte r V olta g e (V )

I C , C o lle c to r-to -E m itte r C u rre n t (A )

Fig. 11 - Typical Switching Losses vs.

Collector-to-Emitter Current

Fig. 12 - Turn-Off SOA

Refer to Section D for the following:

Appendix C: Section D - page D-5
Fig. 13a - Clamped Inductive Load Test Circuit
Fig. 13b - Pulsed Collector Current Test Circuit
Fig. 14a - Switching Loss Test Circuit
Fig. 14b - Switching Loss Waveform
Package Outline 1 - JEDEC Outline TO-220AB

C-20

Section D - page D-12

1000