Bipolar Junction Transistor (BJT)

A Bipolar Junction Transistor is an active semiconductor device formed by two

P-N junctions whose function is amplification of an electric current.

Bipolar transistors are made from 3 sections of semiconductor material

(alternating P-type and N-type), with 2 resulting P-N junctions.

One P-N junction is between the emitter and the base; the other P-N junction is
between the collector and the base.

Bipolar transistors are classified as either NPN or PNP according to the

arrangement of their N-type and P-type materials.

In a transistor, flow of current is due to both electrons & holes and hence the
name bipolar junction transistor.

Their basic construction and chemical treatment is implied by their names. So an

NPN transistors is formed by introducing a thin region of P-type material between two
regions of N-type material.

NPN Transistor
An NPN transistor is formed by introducing a thin region of P-type material between
two regions of N-type material.

PNP Transistor
A PNP transistor is formed by introducing a thin region of N-type material between two
regions of P-type material.

Terminals/Regions of a transistor
BJT consists of 3 regions all of which have a different doping concentration. They are

1.

Collector

2.

Base

3.

Emitter

Collector

Collector region has a larger area than the other two regions.

It has moderate doping.

Compared to the other two regions, the collector carries more current and

generates a larger amount of heat.

In order to dissipate the heat, collector is made of a larger area.

Base

Base has the least area among the 3 regions.

It has very low doping levels.

This terminal is also known as control terminal.

Base terminal is used to control the collector output current of the transistor.

Emitter

Emitter has moderate area.

It has high doping level.

The emitter region has more number of charge carriers. Hence it has high doping.

4 methods for biasing the transistor

1.
Emitter-Base and Base-Collector junction Both reverse biased The transistor
does not conduct current i.e. transistor is in cut-off stage.
2.
Emitter-Base and Base-Collector junction Both forward biased The transistor
conducts maximum current i.e. transistor is in saturation mode.
3.
Emitter-Base junction forward biased and Base-Collector junction reverse biased
The transistor is operating in active mode. This configuration is useful for the purpose
of amplification. The transistor action takes place in this mode.
4.
Emitter-Base junction reverse biased and Base-Collector junction forward
biased This is the inverse mode of operation of the transistor. Transistor conducts but
the current carrying capability of the transistor is very por. It can be used for
attenuating the signals.

Configurations of a transistor
Common Base (CB) Configuration

In the Common Base or grounded base configuration, the BASE connection is

common to both the input signal AND the output signal with the input signal being
applied between the base and the emitter terminals.

The corresponding output signal is taken from between the base and the collector
terminals as shown with the base terminal grounded or connected to a fixed reference
voltage point.

The input current flowing into the emitter is quite large as its the sum of both the
base current and collector current respectively therefore, the collector current output is
less than the emitter current input resulting in a current gain for this type of circuit of
1 (unity) or less, in other words the common base configuration attenuates the
input signal.

Common Base Characteristics

Input Characteristics

Output Characteristics

Common Emitter (CE) Configuration

In the Common Emitter or grounded emitter configuration, the input signal is

applied between the base, while the output is taken from between the collector and the
emitter as shown.

This type of configuration is the most commonly used circuit for transistor based
amplifiers and which represents the normal method of bipolar transistor connection.

The common emitter amplifier configuration produces the highest current and
power gain of all the three bipolar transistor configurations.

This is mainly because the input impedance is LOW as it is connected to a

forward biased PN-junction, while the output impedance is HIGH as it is taken from a
reverse biased PN-junction.

Common Emitter Characteristics

Input Characteristics

Output Characteristics

Common Collector (CC) Configuration

In the Common Collector or grounded collector configuration, the collector is

now common through the supply.

The input signal is connected directly to the base, while the output is taken from
the emitter load as shown.

This type of configuration is commonly known as a Voltage Follower or Emitter

Follower circuit.
The common collector or emitter follower configuration is very useful for impedance
matching applications because of the very high input impedance, in the region of
hundreds of thousands of Ohms while having relatively low output impedance.

Transistor Gains