I

rIlM

ffi illll

lliri

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Reg.No.

20009

Name : ......."....
Th ird Sennester B.Tech. (Reg./Su ppl.fl mp.) (lncl ud i ng Part-Time) Degree
Examination, November 201 1

eoa7 Admn.)
PT 2KGI2K6 CHMUEE/EC/AEI/CS/IT 301 : ENGINEERING MATHEMATICS *
Time: 3 Hours

II

Max. Marks: 100

lnstruction : Answer all questions.

l.

a) lf a positive term series )an

converges, show that

tt

8n =

0. Give an example to

show that the converse is not true.

b)

Find the 8th derivative of x3 Sin 5x.

l+2 1 sl

3 4 ?l
121011

c) Findtherankof O=lU

[r 1

d)

Find thecharacteristic

e) lf F=gxyi-y21

sl
equation of A =l 1 3 -3 | anO hence findthe inverse of A.

l-z -4 -41

evaluate If.Or

whereC:y-x2from (0, O)to(1,2).

f)

Apply Greens theorem to prove that the area enclosed by a plane curve is
%

*ov -Ydx.

g)

Check for linear independence of {(1

h) T: R3 +

[,
SoT.

R2 is given by T (x.,,
S(xr, xr) = (k, x., ) find

x3)

,2,4) (2,2, 8) (1 , 0, 4)}.

- (xr + xzf \,

xr) and S : R2 -+ R2 is given by

(8x5=40)
P.T.O.

M 20009

2. a) i)

-2-

Test the converEence of the series

Jn
s.
)16

ffffil

ffi ffifi

ililr tiilt fiilt fifl ilil

*"

ii) Find the nth derivative of ex (2x+5)3.

(S+7)

OR

b) i)

Discuss the behavior of the geometric series 1 + x + x2e ... to

ii) Expand ex Sinx into Maclurian's

3. a) i)

series upto

t' term.

(8+7)

Find the values of f, for which

(I-1)

x + (31" + 1) y + 2)yz =

- t) x + (4[ *2)y + (]. + 3) z = 0

2x + (31" + 1) Y+ 3 (i, - t) z = 0
(1.

are consistent.

ii) Solve using matrix inversion method

3x+y +22=3;2x-3y-

t=-3;x+

2y

+z=4

(8+7)

OR

b)

i)

Check the consistency and solve the following system of equations using Gauss
elimination. x + y + z- 4 ;2x+ y- z= 1ix-y + 2z= 2.

ii) Verify caytey Hamitton theorem

lz -1 1l

(B+z)

", L;, :., ;l

+ (4y-6xy)dywhere C is the boundary

4. a) i) Verify Green'stheorem tor J(Sx'z-By2)dx

C

of the region enclosed by the lines x = 0, Y = 0, x+y = 1'

ii)

Using divergence theorem evaluate

I
C

finds where i=4yz.i-y'j+yzk-

isthesurfaceofthecubeboundedbyx=0,x=1,Y=0,Y=1,
OR

z=A,z=1.

(&F4

|ilililtilililltIIliltlifi ilflttilr ffit

b) i)

M 20009

-3-

Using Green's theorem evaluate

-y')dx+(x2 +y')dy.
[{Z*'
c

C is the boundary of

the region in the xy plane enclosed by the x-axis and upper half of the circle
x2+y2_a2.
ii) Show that F =

(x' -y' +x) i -(Z*y

y;]

is conservative and find the scalar

potential.

5. a)

(8+7)

i)

Showthat{ (1, 0, O) (1, 1, 0) (1, 1, 1) }forms a basis for

ii)

lf T : R2 -+R' is a mapping defined by T (x, y) = (x+y, y) show thatT

transformaticn.

R3.

is a linear

(8+7)

OR

b)

n
4, e E are linearly dependent iff some of the vectors
is a linear combination of remaining vectors.

i) Show that a set of vectors ar...

ii)

lf T : R2 -+ R2 is a mapping defined byT(x, y) = (3x + 2y, 3x- 4y).ShowthatT is a

li

near transformation.

(8+7)

riltilil fl

flilt

ilil

ililt ilflt

ililtil

M 20550

Reg. No.:

Name:

Third Semester B.Tech. (Reg./Sup./lmp. - lnctuding part-time) Degree

Examination, November 2011
(2007 Admn.)
PT2K6|2K6 EUEc/AEr/cs/rr 302

: HUMANTilES

Time : 3 Hours

Max. Marks : 100

PART _ A

All questions are compulsory.

1. lnsert articles where necessary :

a) Do not look gift horse

b) How blue sky looks

in mouth.

2. Fill in the blanks with appropriate prepositions

a) Human sacrifices were practised
b)

3.

He has spent his life

the Nagas.

Calcutta.

Correct the following sentences

a) This hardly won liberty was not to be tighily abandoned.

b) I never rememberto have seen a more excited foot ball match.

4. Rewrite to indirect speech :

"You have all done it very badly !,' remarked the teacher.

5. lnsert the correct tense of the verb in the following :

a) Hespeaksasonewho
b) So long as the rain

6.

Combine to complex sentence

(to know)
, lstayed at home. (to continue)
:

That is the man. He gave me a dog. lt went mad.

P.T.O.

M 20550
7. Combine to complex sentence containing an adverb clause

llllllll

ilff lllll llu llil llll

llll

A gentle man may call. Please ask him to wait'

8. Add question

tags:

a) You like him,

b) He willnevergive

uP

o Punctuate the following

-?

it is a paltry
Nothing is so easy and inviting as the retort of abuse and sarcasm but
and an unProfitable contest.

10. Rewrite by improving arrangement:

(10x2=20)

For sale, a Piano, the property of a Musician, with carved legs.

PART

Answeranyseven.

11. Define a technical report. Mention its attributes.

12. What are the importance of visual aids and oral communication ?

13. Explain the different styles of note-making'

14. What are the barriers that lead to miscommunication in an organisation ?
15. what is the role of professional ethics in engineering ?
16. What is the role of science and technology in the world of communication

17. How IPR is important for an organisation ?

18. What are the contribution of Arabs to science and technology ?

19. Briefly point out the steps involved in obtaining a patent.

20. What is the impact of science and technology to Indian culture ?

(7x5=35)

Ilillfil

ill il|il

rilllflril

lflfl

-J-

ffi tH

M 20550

PART- C
Answer all.

21. a) "All innovations are not patentable"

- Comment.

OR

b)

Explain the flow of communication in an educational organization.

15

22. a) Explain the different types of technical report.

OR

b) What are the barriers to be overcome forthe good performance on an

15

interview ?

23. a) "lnternet and social networking influencing lndian youth"- Comment.

OR

b) What

are the recent advances in lndian space researches ?

15

il]ilIilltilt

tfit llfltIilfl ilt

Reg. No.
Name

til

M20024

Th i rd

semester B.Tech. ( Reg./su p./l m prov.) (l n cl ud i n g pa rt-Ti me) Deg ree

Examination, November 201 1
(2007 Admn.)
PT2K6/2KG EC/AEI303 : ELECTRICAL ENGTNEERTNG

Time: 3 Hours

Max. Marks : 100

lnstruction : Answer all questions.

PART

a)

Derive the e.m.f. equation of D.C. generator.

b)

Draw and explain the performance characteristics of D.C. shunt motor.

c)

With diagram, explain the working of an Autotransformer.

d)

Mention the differences between single phase and 3 phase transformerconstructions.

e)

Derive an expression for distribution factor of an alternator.

List out the applications of synchronous motor.

g)

Explain the working principle of induction generator.

h)

Give the classifications and applications of

PART

ll. a) With diagrams,

b)

servomotors.

(gx5=40 Marks)

explain the concept of armature reaction in D.C.

generator.

A 1 10 V battery is connected to the same busbars as d.c. generator. Battery resistance

is 0'025 Ct and generator resistance is 0.1 A . The battery flows when the load current
is 100 A. Find the generator output when the load current is s0

A.

OR

P.T.O.

M20024

ililffiilrilililililtilffill]lffitil

c) With a neat circuit diagram,

d)

explain Swinburn's test conducted on a d.c.

machine. I

A 6 pole lap wound shunt motor has 500 conductors. The armature and shunt field
resistances are 0.05 o and 25 o respectively. Find the speed of the motor, if it takes
120 A from a d.c. supply of 100 volts. Flux per pole is 20

milliwebers.

lll. a) With all assumptions,

load.
b)

lV.

explain the phasor diagram of a single phase transformer with

8

ln a 50 KVA transformer, the iron loss is 500 watts and the full load copper loss is
800 watts. Find the efficiency at full load and half full load at 0.8 P.F.
OR

lagging.

c)

With diagram, explain the parallel operation of two single phase

With diagram, explain different 3 phase transformer

a) With neat circuit diagram, explain e.m.f. method

Alternator.

b)

transformers. I

connections,

of finding out regulation of a

Two alternators working in parallel, supply a lighting load of 3000 kW and motor load
amounting to 5000 kW at a P.F. of 0.71 lagging. One machine is loaded up to 5000 kW
at 0.8 P.F. lagging. What is the load and P.F. of other machine

I
T

OR

motor.
d) Write a note on synchronous condenser and mention its field of applications.

c)

Derive an expression for power developed in synchronous

V. a) Give the power flow diagram of a 3 phase induction motor. Write a note on losses in
the machine.

b) A 6 pole, 50 Hz, 3 phase induction motor has rotor resistance and reactance per
phase of 0.02 Q and 0.1 Q respectively. At what speed is the torque maximum ?
What must be the value of external rotor resistance per phase to produce two-third of
the maximum torque at starting

OR

c)
d)

Explain the double field revolving theory in the working of single phase induction

motor.

Explain the working of a stepper motor. How it can be classified ? Mention its

applications.

M 2002s

llililt ililiilt ililt iltil tilt lil lili

Reg.No.

Name :
Th ird Semester B,Tech. (Reg./Su p./lmp.) (l ncl

uding Part-Time) Deg ree Examination,

November 201'!
(2007 Admn.)
PT2K6/2K6 EC/AEI 304 - SOLID STATE DEVICES
Time :3 Hours

Max. Marks : 100

lnstruction : Answer all questions"

l.

1) A silicon sample

is doped with 5x1016 As atoms/cms and 2x1016 Boron atomsicms.

(i)
Determine : electron and hole concentrations at room temperature (ii) position of
Fermi level. Assume ni = 1 .5x1010 cm-3 at room temperature.

2)

Expiain Quasi Fermi levels.

3)

Explain a varactor diode.

4j With neat diagrams explain avalanche break down.

5)

With neat diagram define delay time, rise time, fa!ltime for switching transistor"

6)

Define injection efficiency and transport factor of a BJT. How are they related to

cr

and B?

7) With neat ckt diagram explain CMOS inverter.

8)

Explain ideal MOS

capacitor.

(8x5)

Il. ) a) Explain diffusion process. Derive the expression

1

b)

For a silicon sample at 300 K

Po

for diffusion

current.

10

= 4x1012 cm-S

a) determine the electron density

b) determine the acceptor density if donor density is 1012 cm-3
Given ni = '1.5x1010

cm-3.

OR

2) a)

b)

Derive Einstein

relations.

Explain intrinsic and extrinsic semiconductors with

10

example.

5
P.T.O.

M 20025

lll. 3)

a) Derive the expression for junction capacitance of p-n

b)

ifi lill

ilt

ililHilt filll iiill

tfl i

junction.

lilt

A silicon aprupt p-n junction at 300 K has Nu = 1016 cm-s orl p - side and No = 10" em-s on
N-side Area of cross secticn is -10-5 crn2. Calcuiate the .junction capacitance,

G= :

= 8.854x10-14x1 1.8. ni = 1.5x1010

cm-3.

OR

4)

a) What is a Pon diode ? Write the approximate expression for W and I of P.n
b) Explain with diagram characteristics of Tunnel

lV.5)

diode.

diode.

a) Draw Ebers Moli model of pnp BJT and wnite the Ebers Moll equations. Exptain

the terms

involved.

b) Plot the ir'p and oip characteristics of p-n-p transistor in common-base configuration
ancl explain. Mark different regions of

operation.

OR
6)

v. 7)

a)

Explain with neat diagrams emitter crowding.

b)

Write neat diagrams explain Kirk effect"

With energy band diagrams explain the working of MOS transistor under
a) Equiiibriurn
b) '=-'ve voltage is applieci
c) '+'ve voltage is applied
d) large positive voltage applied.
OB

8) a)

Find the maximum wicith of the depletion region for an ideal MOS capacitor on
p-type Siwith N,=' i01ecm-3 ni = 1.5x1010cm-3. . = F G = 1 1.8x8.85x10-1a.

ttf

b)

= 0.026

Explain short channel effects in MOSFETS.

15

llllllil il il]tllilllllll illll

Reg. No.

llfl

M 20026

llll

Name :
Third Semester B.Tech. (Reg.lSup.flmp.) (lncluding Part - time)
Degree Examination, November 201 1
pOAT Admission)
PT2kGl2k6 EC/AEI 305 : NETWORK THEORY
Max. Marks: 100

Time: 3 Hours

lnstructions
1.

a)

1) Answer al! questions.

2) Assume missing data'

For the circuit show in figure 1. (a) determine the voltage V,, Vo, V., and Vo,

,\-

.+

r.--YV

I n'*tAe J"

,=*u-l
.l

-:;

l{

n ,ur'fi

-vn
L.

?
3: '5r-fu

1'

v!

I 't'

+
Figure 1. (a)

b)

Determine the rnagnitude and correct direction of the currents l. and lu for the netwoa"k
shown in figure 1. (b).

VV,/

li.lt

L j,=ro
\fr

5r?

at\
-/"
'
\\"\Y

*--+
r3
Figure 1. (b)

P.T.O.

M 20026

c)

-2-

Use defining integral to find laplace transform of (i) g

d) Findf(t)ifF(s) =ffi

2"

(t)

(ii) e-

tillfit tfitilffiilililililfi lllililt

at

10(s2 + 119)

e)

Obtain the relationship between Z and Y parameters.

Write short note on the use of lmage lmpedance.

g)

Write a short note on Properties of RC network functions.

h)

Explain briefly Brune's positive real functions with the help of an

a)

The switch in the circuit shown in figure 2.{a) has been closed for a long time before
it is opened at t = 0. Find

example.

(8x5=40)

i) iL{t) fort> 0
ii) io (t) for t > 0+
iii) vo (t) for t > 0+
iv) the percentage
10 Q

of the total energy stored in the 2H inductor that is dissipated in the

resistor.

15
s
!L_

+
4o st' r{l
Vo

Figure 2.tal
OR

b)

Determine the Jhevenin equivalent circuit external to Z, in the circuit as shown in

figure 2.

(b).

SoV

ful'
Figure 2.(b)

15

rrillllililililililffiruffiililrilil

3.

M 20026

a) Determine for the Fl-L series circuit shown in figure 3. (a) expression for current i,
inductor voltage V. and resistor voltage V* when a step voltage V is applied to the
input terminals.

:;L

15

J:e-

-Vu

j: t'

t.

t;

Figure 3. (a)
OR

b)

Use Laplace transforms to solve the differential equation

z]-.* s9 - 3v=o
dx' dx
Given that when x = o, y

4ano

fl = o

4. a) A network has transmission matrix

15

l) 2ooo )
[io oot 1 )
[

(t+

Determine the parameters for two such networks in cascade.

15

OR

n - network has series impedance of 10160' and shunt admiitances of

0.01/75" S. Determine :
a) the transmission matrix and
b) the input voltage and current when there is a load resistance of 20fi across the
output and the input voltage produces a current of lro through it.
15

b) A symmetrical

5.a) Explain in detail Fcster and cauer forms of RC and RL networks with the help of
example.

15

OR
b)

i) Write short note on even and odd functions.

ii) Write short note on properties of positive realfunctions.

M 20A27

Illlilililililtililttilfiililffiilil

Reg. No.
Name

Th i rd Semester B.Tech. (Reg./Su p./lmp.) (l ncl ud in g Part-Ti me) Deg ree

Examination, November 2O11
PT2KGI2KOEC/AEI306 : ELECTRONIC CIRCUITS - I

Time:3 Hours

Max. Marks : 100

lnstruction : Answer all questions.

l.

1)

Describe a common base transistor configuration with the help of circuit and output
characteristics.

2)

Describe RC-coupled CE transistor stages.

3)

With circuit diagram, explain self biasing circuit for n-channel FET.

4) Explain fixed bias circuit for a n-channel

enhancement MOSFET.

5)

With block diagram, explain the concept of negative feedback.

6)

With block diagram, explain Barkhausen criterion for an oscillator.

7)

Define the conversion efficiency

expression for 11

tt of a power amplifier, hence derive a simple

B) What is cascode pair ? Also state the benefits.

ll. A) i)
ii)

(8x5=40)

Describe h-parameter model for a common emitter configuration.

Describe hybrid zr model for a transistor in CE configuration.

OR

B)

i)

For a transistor in CC configuration, write the h-parameter model and derive the
expression for current gain, voltage gain, input impedance and output admittance. 10

ii) Compare CE, CB and CC configurations in terms of A,, Av, Rr and

ilr. A)

i)

Explain the fixed biasing for n-channel

FET.

Ro.

s
s

ii) Draw the small signal equivalent circuit at high frequencies for a CS amplifier.
Derive the expression for voltage gain, input impedance and output admittance. 10

OR
P.T.O"

M-20027
B)

i)

ililtilltil

With circuit diagram, explain the feedback biasing for an enhancement

il]t

ill ililililt lilt il]

MOSFET.

ii) Draw the small signai equivalent circuit at high frequencies for source follower. Derive

the expression for voltage gain, input impedance and output

rv. A)

i)

Describe the four possible topologies of a feedback

admittance.

amplifier.

ii) Explain the effect of negative feedback on the input impedance of a currentseries and voltage shunt feedback

amplifier.

10
8

OR
B)

i)

Describe a Hartley oscillator. Also derive the expression forfrequency of oscillation

starting from the reactance of tank circuit.

ii) List the factors which affect the frequency

stability of an oscillator. Also describe a

crystal oscillator.

V. A)

i)

With circuit diagram and waveforms, describe a class B push pull amplifier.

ii) Compare class A, B and class Ats amplifiers.

I
10
E

OR
B)

i)

Explain broad banding techniques in power amplifiers.

ii) Explain wide band amplifiers.

I
7