Documenti di Didattica
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Documenti di Cultura
Takehiko Adachi
Faculty of Engineering, Yokohama National University
Tokiwadai 79-5, Yokohama, Japan
1
circuit is much smaller than that of the resonator. frequency is calculated from the obtained equiva-
Therefore, when the current dependence of the lent capacitance and the crystal parameters. The fre-
equivalent parameters of the active circuit are calcu- quency deviation caused by the power supply volt-
lated beforehand, the oscillation frequency and the age variation can be calculated by similar calcula-
crystal current can be calculated by these character- tion for the power supply voltage VCC + dVCC . By
istics and the equivalent parameters of a crystal res- this method, the frequency deviation of 1ppm
onator. 0.01ppm can be estimated by calculation of the ac-
tive impedance with the 10 3 10 4 resolution.
2.2 Calculation method of negative resis- Ci
tance and equivalent capacitance Ci B1 VCC
VCC +dVCC
Ci +dCi B2
The negative resistance and the equivalent capaci-
tance of the active circuit can be calculated by the
following procedure; At first, the voltage response at
the crystal terminals is calculated using the transient ix i x +dix i
0
analysis, when the crystal resonator is replaced by A1
- Re
the sinusoidal current source with magnitude Ix and A2
frequency f in Fig. 1. Then, the magnitude Vx and
phase φ of the fundamental component of the volt- VCC VCC +dVCC
age response are calculated from the 1-period data - Ri
of the steady state voltage response. The negative
resistance and the equivalent capacitance are calcu-
Figure 2: Crystal current dependence of negative
lated using obtained Vx and phse φ and the crystal
resistance and equivalent capacitance.
current Ix , by the following equations.
Vx
Ri = cos φ (1) 2.3.1 Convergence
Ix
Ix To obtain the negative resistance and the equivalent
Ci = (2)
2π fVx sin φ capacitance, the calculation of the transient analysis
is necessary until the voltage response reaches the
steady state. Judgment whether the response reaches
the steady state is easily made by checking the varia-
2.3 Calculation method of steady state tion of the period of voltage response cycle by cycle.
characteristics Necessary cycles to reach the steady state is roughly
proportional to the number of transistors used in the
The crystal current and the oscillation frequency at oscillator circuit. Although necessary cycles depend
the steady state can be calculated by following pro- on the purpose of the calculation, 20 50 cycles is
cedure; The crystal current dependence of the nega- sufficient for the colpitts crystal oscillator composed
tive resistance and the equivalent capacitance are ob- by single transistor.
tained at the power supply voltage VCC and the crys-
tal nominal frequency, as in Fig. 2. The steady state 2.4 Example
crystal current is obtained from the current value at
the point A1 where the magnitude of negative resis- Fig. 3 shows the schematic diagram of the cas-
tance agrees with the crystal equivalent resistance code crystal oscillator[7] widely used as a frequency
Re . The steady state equivalent capacitance is ob- source of mobile communication equipments. The
tained from the value of capacitance at the current negative resistance and the equivalent capacitance,
level obtained above. The steady state oscillation and frequency stability against the power supply
2
voltage are calculated and compared to the measure- 20
18
ment. 16
Ci [pF]
14
12
Rc 10
RD 8
6
Q2 Output 4
2
CD 0
VCC 0 0.2 0.4 0.6 0.8 1
RA Ic Ix [mA]
Ix Cs 0
Q1 0.2 0.4 0.6 0.8 1
-100
Ri [pF]
CA -200
RB
CB -300
RE
-400
3
by the obtained equivalent parameters of the ac- R0BVA
VBE
R + RB
tive circuit and the crystal parameters. This method
A
RA R0B
IC0 = (6)
is a modified harmonic balance method based on 1
B f (RA + R0B)
1+ RE +
the time domain analysis and the frequency domain Bf
analysis[4].
Recently, sophisticated simulators base on the
harmonic balance technique are available. ADS[8] 1
RA + R0B
VBE =
and Micro wave office[9] are the examples of these 1
R0BVA
+
simulators. These simulators also have the function VT
of phse noise analysis.
ln (
VA
! ) (7)
(RA + R0B )RE 1 RA
IS
R 0 1+
Bf
+
Bf
B
3 Algebraic analysis method
where B f , VA , IS are transistor model parameters,
Although simulator is a powerful tool for crystal os- and R0B is the parallel resistance of RB and B f RE .
cillator design, it is difficult to grasp the relation be- K (v) is expressed as follows;
tween circuit performances and circuit parameters
by simulation. We have derived the several approxi- 2 I1 (v)
mate equations for the fundamental performances of K (v) = (8)
v I0 (v)
a crystal oscillator.
where I0 (v) and I1 (v) are 0th and 1st order modified
Bessel functions, respectively.
3.1 Negative resistance and equivalent ca-
R p is the equivalent loss component of the active
pacitance circuit. The loaded Q of the oscillator is determined
The approximate expression of the negative resis- by the crystal equivalent resistance Re and R p .
tance for the cascode oscillator shown in Fig. 3 is The equivalent capacitance is given by the follow-
given by the following equations[6]. ing equations.
1 φ 1
CA0
Ci = C jBC + + (9)
gm Ix CB
ω CACB ωCA0 VT
0
Ri = K( ) + Rp (3)
2
where,
1 1 1
Rp = 0 + +
RBE (ωCA ) 2 RE (ωCB ) 2 RAB (ωCt )2 gm Ix 1 1
φ = 1+ 0 K( 0 ) 0 + (10)
(4) ωCA ωCAVT ωCA RBE ωCB RE
where VT is the thermal voltage, CA0 is the parallel 3.2 Frequency stability against power sup-
capacitance of CA and the large-signal base-emitter ply voltage variation
capacitance of transistor Q1 , Ct is parallel capaci-
tance of CA0 and CB , RAB is the parallel resistance of
Frequency deviation caused by power supply volt-
age change is calculated by the deviation of equiv-
RA and RB , RBE is the large-signal base-emitter re-
alent capacitance of the active circuit using the fol-
sistance.
lowing equation[5].
gm is the mutual conductance of transistor Q1 at
the large-signal collector DC current IC0 and is ex- d f=f CiC1 dCi =Ci
= (11)
pressed by the following equations. dVCC =VCC 2(Ci + C0 )2 dVCC =VCC
4
Table 2: Comparison of frequency stability
dCi =Ci 1 1 MJC CJC estimated by approximate analysis
dVCC =VCC
= (
CA
+ )
CB V JC
VBC0 1+MJC BC0
V
and simulation
1
V JC frequency deviation [ ppm] Error
1 1 MJE CJE
+
1 + CA =CB CA V JE
VBE 1+MJE
Circuit Simulation Analysis [%]
1 No. 1 0.485 0.543 12
( V JE ) No. 2 0.063 0.070 11
1
VBE0
VT
1
1
1
1
VB 2VT k VB BBE0
(12) The start-up time is defined by the time where the
crystal current reaches the 90% of its steady state
where MJC,CJC,CJE,V JE are the transistor model value. The approximate equation of start-up time is
parameters, VBC0 , VBE0 , VB are the base-collector given by the following equation.
bias voltage, base-emitter bias voltage, base bias
RDCD (RA + R0B ) n VBE o
voltage, respectively.
RA + R0B + RD
k is the margin of the negative resistance: the ra- t90% = 3 ln 1
VBmax
tion of the negative resistances at the steady state
oscillation and the small signal level. 2L1
Calculation of the frequency deviation are made Rn0 (R p + R1 )
!
and compared to the simulated values for the cir-
cuits with the parameters of Table 1. Tabel 2 shows ln
Ix2
Ix1
+ ln
R1
R1
Ri (Ix1 )
Ri (Ix2 )
the comparison of the frequency deviation between ( !)
the algebraic approximate analysis and simulation. 2L1 R p + R1
+ ln 10 + ln 1 2
Sufficiently good agreement is obtained between the R p + R1 Rn0
approximate analysis and simulation.
(13)
Table 1: Circuit parmeters where VBmax is DC base voltage, Rn0 is small signal
negative resistance, Ix1 , Ix2 are the crystal boundary
Parameter No. 1 No. 2 current used by approximate analysis.
CA = CB [ pF ] 36.0 108.0 The analysis of the start-up characteristics of the
RE [kΩ] 18.0 6.0 cascode oscillator is made and compared to the sim-
RA = RB [kΩ] 128.0 42.7 ulation. Tabel 3 shows the circuit parameters of the
L1 [mH ] 5.80 5.80 circuits. Fig. 6 shows the start-up characteristics.
C1 [ f F ] 11.9 11.9 Tabe 4 shows the calculated results of start-up time.
R1 [Ω] 14.0 14.0 Sufficiently good agreement is obtained between the
C0 [ pF ] 2.84 2.84 approximate analysis and simulation.
4 Summary
3.3 Start-up Characteristics of Cascode
The analysis methods of a crystal oscillator are pre-
Crystal Oscillator
sented. SPICE base method gives high resolution
On the design of cellular phones, the reduction of the with short simulation time. Approximate analysis
start-up time of a crystal oscillator is required for re- methods can estimate the frequency stability and
duction of the power consumption. We have derived start-up time with sufficient accuracy. Presented
the algebraic analysis method of start-up character- methods are thought to be useful for crystal oscil-
istics of the cascode crystal oscillator. lator design.
5
10
IX [mA]
1e-1
Parameter No. 1 No. 2
1e-2 Circuit No. 1
CA [ pF ] 180 60
1e-3
CB [ pF ] 220 180
Crystal current
CD [nF ] 10 10 1e-4
CS [ pF ] 42.29 1e-5