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Chapter 10, Solution 1.
Known quantities:
Transistor diagrams, as shown in Figure P10.1:
(a) pnp, VEB = 0.6 V and VEC = 4.0 V
(b) npn, VCB = 0.7 V and VCE = 0.2 V
(c) npn, VBE = 0.7 V and VCE = 0.3 V
(d) pnp, VBC = 0.6 V and VEC = 5.4 V
Find:
For each transistor shown in Figure P10.1, determine
whether the BE and BC junctions are forward or
reverse biased, and determine the operating region.
Analysis:
(a) VBE = - 0.6 V for a pnp transistor implies that the BE junction is forward-biased.
VBC = VEC - VEB = 3.4 V. The CB junction is reverse-biased. Therefore, the transistor is in the
active region.
(b) VBC = - 0.7 V for a npn transistor implies that the CB junction is reverse-biased.
VBE = VBC - VEC = -0.5 V. The BE junction is reverse-biased. Therefore, the transistor is in the
cutoff region.
(c) VBE = 0.7 V for a npn transistor implies that the BE junction is forward-biased.
VBC = VEC - VEB = 0.4 V. The CB junction is forward-biased. Therefore, the transistor is in the
saturation region.
(d) VBC = 0.6 V for a pnp transistor implies that the CB junction is reverse-biased.
VBE = VBC VEC = - 4.8 V. The BE junction is forward-biased. Therefore, the transistor is in
the active region.
Chapter 10, Solution 2.
Known quantities:
Transistor type and operating characteristics:
a) npn, VBE = 0.8 V and VCE = 0.4 V
b) npn, VCB = 1.4 V and VCE = 2.1 V
c) pnp, VCB = 0.9 V and VCE = 0.4 V
d) npn, VBE = - 1.2 V and VCB = 0.6 V
Find:
The region of operation for each transistor.
Analysis:
a) Since VBE = 0.8 V, the BE junction is forward-biased. VCB = VCE + VEB = - 0.4 V. Thus, the
CB junction is forward-biased. Therefore, the transistor is in the saturation region.
b) VBE = VBC + VCE = 0.7 V. The BE junction is forward-biased.
VCB = 1.4 V. The CB junction is reverse-biased. Therefore, the transistor is in the active
region.
c) VCB = 0.9 V for a pnp transistor implies that the CB junction is forward-biased.
VBE = VBC VCE = - 1.3 V. The BE junction is forward-biased. Therefore, the transistor is in
the saturation region.
d) With VBE = - 1.2 V, the BE junction is reverse-biased.
VCB = - 0.6 V. The CB junction is reverse-biased. Therefore, the transistor is in the cutoff
region.
Chapter 10, Solution 3.
Known quantities:
The circuit of Figure P10.3:
IC
100 .
IB
Find:
The operating point and the state of the transistor.
Analysis:
VBE 0.6 V and the BE junction is forward biased.
12.5A
3
820 10 910 101 911910
I C I B 1.25mA
IB
15 VBE 15 0.6
480 A
30000 30000
From the value of VCE it is clear that the BJT is in the active region.
Chapter 10, Solution 7.
Known quantities:
The circuit of Figure P10.7, assuming the BJT has
V 0.6 V .
VCC = 20V
Find:
The emitter current and the collector-base voltage.
Analysis:
Applying KVL to the right-hand side of the circuit,
VBB I E RE VEB 0
V VEB 20 0.6
I E BB
VBB = 20V
6.29 V .
I C 79.5 103
Chapter 10, Solution 10.
Known quantities:
Figure P10.10, assuming both transistors are
silicon-based with 100 .
Find:
a) IC1, VC1, VCE1.
b) IC2, VC2, VCE2.
Analysis:
a)
From KVL:
30 I B1RB1 VBE1 0
30 0.7
I B1
39.07 A
750 103
I C1 I B1 3.907 mA
I E2
5.779 0.7
4.7 103
1.081 mA
Finally, I C 2
30 VC 2
RC 2
100
Load line
IC
12 0.1
11.9 mA
1
50
And since
V VBEsat
I B BB
mA
10
Therefore,
V VBB 0.238 mA 10k 0.6 2.98 V
50 5kI C VCE 5k ( I C 20 A) 0
or
If VCE 0 , I C
49.9
4.99mA , and if I C 0 , VCE 49.9V .
10k
I C
2mA
200
I B 10A
Find:
Range of RC.
Analysis:
RC
340
I LED
0.01
Pmax
0.1
71 mA
V LED 1.4
Find:
1A
R
12
min
IC
I B max
1
1 10 3
1000
1
I E 40.4mA .
Since the base-emitter junction voltage is assumed to be 0.6 V, then resistor R2 has a voltage:
V2 V z V 5.6 0.6 5 V , so the required value of R2 to be:
R2
V
5
123.8
IE
0.0404
Since the only purpose of R1 is to bias the Zener diode, we can select a value that will supply
enough current fro the Zener to operate, for example R1 > 100 , so that there will be as little
current flow through this resistance as possible.
Finally, we need to select an appropriate supply voltage. VCC must be greater than or equal to the
sum of the battery voltage, the CE junction voltage and the voltage across R2. That is,
VCC 9 VCE 5 . A collector supply of 24 V will be more than adequate for this task.
Finally, we need to select an appropriate supply voltage. VCC must be greater than or equal to the
sum of the battery voltage, the CE junction voltage. That is, VCC 11 VCE . A collector supply
of 12 V should be adequate for this task.
R2 22 k
Find:
VCEQ
Analysis:
Simplify the circuit by obtaining the Thvenin equivalent of the biasing network (R1,, R2, VCC) in
the base circuit:
V CC R2 12 22
VD : V BB = V TH = V OC = = = 2.538 V
R1+ R2 82 22
82 22
Suppress V CC : RB = Req = R1 R2 = = 17.35 k
R1+ R2 82 22
Redraw the circuit using the Thvenin equivalent. The "DC blocking" or "AC coupling" capacitors act as open
circuits for DC; therefore, the signal source and load can be neglected since this is a DC problem. Specify directions
of current and polarities of voltages.
Assume the transistor is operating in its active region. Then, the base-emitter junction is forward
biased.
V BEQ 700 mV [Si]
I EQ = [ + 1 ] I BQ
KVL : - V BB + I BQ R B + V BEQ + I EQ R E = 0
- V BB + I BQ R B + V BEQ + [ + 1 ] I BQ R E = 0
I BQ =
V BB - V BEQ
2.538 0.7
=
= 22.18 A
+
1
17350
130 1 500
RB
RE
6
= 2.906 mA
I EQ = + 1 I BQ = 130 + 1 22.18 10
KVL : - I EQ R E - V CEQ + V CC = 0
V CEQ = V CC - I EQ R E = 12 2.906 0.5 = 10.55 V
The collector-emitter voltage is greater than its saturation value (0.3 V for Silicon). Therefore
the initial assumption (operation in the active region) was correct and the solution is valid.
VEE 4 V
R E 3 k
RL 6 k
Find:
VCEQ
Analysis:
The "DC blocking" or "AC coupling" capacitors act as open circuits for
DC; therefore, the signal source and load can be neglected since this is a
DC problem. Specify directions of current and polarities of voltages.
Assume the transistor is operating in its active region; then, the baseemitter junction is forward biased and:
VBEQ 700 mV [ Si ]
I CQ I BQ
I EQ ( 1) I BQ
VEE VBEQ
RB 1 RE
4 0.7
8.189 A
100000 (100 1)(3000)
100
RB 60 k
Find:
a) The value of RE so that I E is 1 mA.
b) RC so that VC is 5 V.
c) The small-signal equivalent circuit of the amplifier for RL 5k
d) The voltage gain.
Analysis:
(a) With RB 60 k and VB 3 V , applying KVL, we have
3 I B RB 0.6 (1 ) I B RE
2.4
IB
60k 101RE
I E 101
2.4
1mA
60k 101RE
Therefore,
101 2.4 60
1.81 k
101
(b) VCE 15 I C RC I E RE
(d)
hie
VBE
I B
I BQ
vS h ie
VS
RB hiw
1
vout I C RL
h
oe
RB
RC
IB
h fe I
IC
1
RL
h oe
I out h fe I B
C 1 h
oe
0.6
60.6k
0.0099 10 3
Since hoe is not given, we can reasonably assume that 1/hoe is very large. Therefore,
v
100 RL
AV out
4.15
vs
RB hie
+
v OUT
Find:
e) The operating point of the transistor.
f) Voltage gain vout vin ; current gain iout iin
g) Input resistance ri
h) Output resistance ro
Analysis:
(a) VB VCC
R2
6.1 V
R1 R2
RB R1 || R2 3749.87
V
I E E 22 mA
RE
IB
IE
0.088 mA
b 1
and
VBE
I B
I BQ
0 .6
0.088 10 3
6.82k
vout RE ( I B I C ) 250(250 1) I B
vin I B hie vout I B hie 250 251 I B
and
iout I B I C ( 1) I B
v
iin I B in I B ( I B hie 250 251 I B ) RB
RB
12.84
iin
I B ( I B hie 250 251 I B ) RB
(c) To find the input resistance we compute:
vin I B hie 250 251 I B
v2
Q1
Q2
Q3
vo1
vo2
off
off
on
5V
5V
off
on
off
5V
5V
on
off
off
5V
5V
5V
on
on
off
5V
Find:
Show that the given circuit functions as a NOR gate if the output is taken at v02.
Analysis:
See the state table constructed for Problem 10.41. This table clearly describes a NOR gate when
the output is taken at vo 2 .
5 0.2
2.4 mA , therefore, iB = iC/ = 0.24 mA.
2000
v 0.6
RB in
. Substituting for (vin)min and (vin)max , we find the following range for RB:
iB
5.833 k RB 18.333k
or
R1B R2 B 27 k .
Find:
a) vB, vout, and the state of the transistor Q1 when vin
is low.
b) vB, vout, and the state of the transistor Q1 when vin
is high.
Analysis:
a)