13 06

- Agilent 4284A Precision LCR Meter

:
Chapter 1 Motivation
Agilent 4284A MOS capacitor C-V

Chapter 2 Instrument
Agilent 4284A Precision LCR Meter

Safety Considerations
Any interruption of the protective ground conductor or
disconnection of the protective ground terminal can make the
instrument dangerous. Before you measure a capacitor, be sure the

capacitor is fully discharged.

Impedance Parameters
All circuit components, resistors, capacitors or inductors, have
parasitic components lurking in the shadows waiting for the unwary,
for example unwanted resistance in capacitors, unwanted capacitance
in inductors, and unwanted inductance in resistors.
Impedance definitions

Vector representation of impedance

The following parameters can be used to represent the reactance.

Where,

Q : Quality Factor
D : Dissipation Factor

Parallel/Series Circuit Mode

To measure L, C, or R, there are two equivalent circuit models, the
parallel and series modes as shown in Table below, and the 4284A can
select the mode by setting the FUNC (Cp, Cs, Lp or Ls ) on the MEAS
SETUP page. To determine which mode is best, consider the relative
impedance magnitude of the reactance and Rs and Rp.

Capacitance Circuit Mode Selection

The following is a rule of thumb for selecting the circuit mode

according to the impedance of the capacitor.
Above approx. 10 k : use parallel circuit mode
Below approx. 10 k : use series circuit mode
Between above values : follow the manufacturer's
recommendation
For example, to measure a 20 F capacitor at 1 kHz
, the Cs-D or Cs-Q function is suitable.

Sweep Mode (SEQ/STEP)

SEQ mode: when the 4284A is triggered once, all sweep points are
automatically swept.
STEP mode: each time the 4284A is triggered the sweep point is
swept by one step.

Correction Setup
Open correction
The 4284A's OPEN correction capability cancels errors due to the
stray admittance (G, B) in parallel with the device under test (Refer to

Figure below)
SHORT Correction
The 4284A's SHORT correction capability corrects for the residual
impedance (R, X) in serial with the device under test (Refer
to Figure below).

LOAD Correction
The 4284A's LOAD correction capability corrects for the other
errors by using the transmission coefficient derived from the
relationship between a standard's reference value to the actual
measurement value at the frequency points you specify.

Chapter 3 C-V Measurement

Nsub Extraction-Differential Capacitance Method

1
1
1

(
)
)

(
)
2 = 2 = 2 = 2

= + +
1 2

+
2

=
=

( +
)

= +

1
( 2)
2
=

( ) =

1 =
( 2)
[ ]

MOS CV: LFCV and HFCV

In the limit of a very high frequency, the inversion layer charge will not respond
to a differential change in capacitor voltage. Under the condition of HFCV, the
inverted minority carrier can follow V G but not vSS, so we only can measure as
Cmin. Under the condition of LFCV, the minority carrier can follow both V G and
vSS , so we can measure the capacitance induce from carrier of the inversion
layer.

 Chapter 4 C-V Measurement

250 x 250um2
:

1. : series mode parallel mode

2. : Quality factor(Q) dissipation factor(D)

Q10 D0.1
:
2

250X250(um ) C-V series mode

0.0000007

100kHz
1000kHz

Capacitance (F/cm )

0.0000006
0.0000005
0.0000004
0.0000003
0.0000002
0.0000001
0.0000000
-4

-2

Voltage (V)

250X250(um ) 250X250(um
C-V parallel 2mode
) C-V parallel mode
0.0000007

100kHz
1000kHz

Capacitance (F/cm )

0.0000006
0.0000005
0.0000004
0.0000003
0.0000002
0.0000001
0.0000000
-4

-2

Voltage (V)

:
2

250 x 250um

series

parallel

Dispersion

[ 1]

Disspation factor(D)

0.07~0.4

0.07~0.4

[ 2]

[ 1]: 250 x 250um2 MOS

parallel mode series mode accumulation region
dispersion MOS parallel

[ 2]: Disspation factor(D) 0.07~0.2

300 x 300um2
300 x 300um2
series parallel)(Quality factor(Q) dissipation factor(D))
2

300X300(um ) C-V series mode

0.0000014

100kHz
1000kHz

0.0000012

Capacitance (F/cm )

0.0000010
0.0000008
0.0000006
0.0000004
0.0000002
0.0000000
-4

-2

Voltage (V)

300X300(um ) C-V parallel mode

0.0000010

100kHz
1000kHz

Capacitance (F/cm )

0.0000008

0.0000006

0.0000004

0.0000002

-4

-2

Voltage (V)

:
2

300 x 300um

series

parallel

Dispersion

Disspation factor(D)

0.08~0.6

0.08~0.6

[ 3]

[ 3]: Disspation factor (D0.1)

400 x 400um2
2

400X400(um ) C-V series mode

1.40E-007

1000kHz
500kHz
100kHz

1.00E-007

Capacitance(F/cm )

1.20E-007

8.00E-008

6.00E-008

4.00E-008

2.00E-008
-4

-2

Voltage(V)

400X400(um ) C-V parallel mode

1.40E-007

1000kHz
500kHz
100kHz

Capacitance(F/cm )

1.20E-007

1.00E-007

8.00E-008

6.00E-008

4.00E-008

2.00E-008
-4

-2

Voltage (V)

400 x 400um

series

parallel

Dispersion

Disspation factor(D)

0.01~0.2

0.01~0.1

[ 4]

[ 4]: Disspation factor

Chapter 5

250 x 250um2 ( 1000kHz )

2

250X250(um ) C-V parallel mode

0.0000007

1000kHz
0.0000006

Capacitance (F/cm )

0.0000005

0.0000004

0.0000003

0.0000002

0.0000001

0.0000000
-6

-4

-2

Voltage (V)

Substate type: P-type

Tox
accumulation mode(-5V): 6.11 107 (F/cm2)

Cox =
T
3.9 8.85 1014
7
6.24 10 =
T

Tox= 5.52 107 (cm)=5.52(nm)

N Sub

( 2 )
2[ ]1

NSub

( 2 )

depletion region(-1.2~-0.9) slope:

1
( 2 )

= 2.37 1013

= 2 [1.6 10

19

11.7 8.85 10

14

( 2)

V FB
V FB LD(Debye length)

= 5.1 1017 (cm-3)

11.7 8.85 1014 0.0258

=
= 5.72 107 ()
2
1.6 1019 5.1 1017

C
C = C = (

+ )1 =4.66 107

C-V Bias voltage VFB

V FB =-1.6(V)
VFB Vacc CLD
CFB Cacc

300 x 300um2 ( 1000kHz )

2

300X300(um ) C-V parallel mode

0.0000009

1000kHz

0.0000008

Capancitance (F/cm )

0.0000007
0.0000006
0.0000005
0.0000004
0.0000003
0.0000002
0.0000001
0.0000000
-6

-4

-2

Voltage (V)

Substate type: P-type

Tox
accumulation mode(-5V): 9.56 107 (F/cm2)

Cox =
T
3.9 8.85 1014
7
8.25 10 =
T

Tox= 4.18 107 (cm)=4.18(nm)

N Sub

( 2 )
2[ ]1

NSub

( 2 )

depletion region(-1.2~-0.9) slope:

1
( 2 )

= 9.45 1012

= 2 [1.6 10

19

11.7 8.85 10

14

( 2)

= 1.28 1018 (cm-3)

V FB
V FB LD(Debye length)

11.7 8.85 1014 0.0258

=
= 3.61 107 ()
2
1.6 1019 1.28 1018

C
C = C = (

)1 =6.41 107

C-V Bias voltage VFB

V FB =-1.5(V)

400 x 400um2 ( 1000kHz )

2

400X400(um ) C-V parallel mode

1.40E-007

1000kHz
500kHz
100kHz

1.20E-007

Capacitance

1.00E-007

8.00E-008

6.00E-008

4.00E-008

2.00E-008
-4

-2

Voltage (V)

Substate type: P-type

Tox
accumulation mode(-5V): 9.56 107 (F/cm2)

Cox =
T

1.35 107 =

3.9 8.85 1014

T

Tox= 2.55 106 (cm)

N Sub

( 2 )
2[ ]1

NSub

( 2 )

depletion region(-1.6~-0.9) slope:

1
( 2 )

= 2.13 1014

= 2 [1.6 10

19

11.7 8.85 10

14

( 2)

= 5.64 1016 (cm-3)

V FB
V FB LD(Debye length)
=

11.7 8.85 1014 0.0258

=
= 1.74 106 ()
2
1.6 1019 5.55 1016

C
C = C = (

+ )1 =1.11 107

C-V Bias voltage VFB

V FB =-1.9(V)

Table of all capacitnaces.

Tox(nm)
Nsub(cm-3)

250 x 250um2
5.52
5.01 10

17

300 x 300um2
4.18
1.28 10

18

400 x 400um2
25.5
5.64 10

16

[ 5]
[ 6]

VFB(V)
-1.6
-1.5
-1.9
2
[ 5]: Tox 400 x 400um MOS Tox
3 Tox
[ 6]: 250 x 250um2 300 x 300um2

quality factor(Q) dissipation factor(D)

 Chapter 6 Low frenwuency C-V measurement

2

400X400(um ) low frequency C-V

1.40E-007

1k hz

Capacitance (F/cm )

1.20E-007

1.00E-007

8.00E-008

6.00E-008

4.00E-008

2.00E-008
-4

-2

Voltage (v)

20Hz frenquency 60Hz

60Hz
low frquency 1kHz
treatment
generation rate minority carrier
AC inversion region C-V