Capital University of Science & Technology, Islamabad

Department of Electrical Engineering

Course Title:

EEME_1222: Basic Electronic Engineering

Pre-requisite(s):

PHME_1012: Applied Physics

Credit Hours:

Instructor:

Mr. Fahd Naveed Cheema

Office: 1st Floor, A-Block
Department of Electrical Engineering
Phone Ext: 132
E-mail: fahd.cheema@cust.edu.pk

Recommended Book(s):

Electronic Devices and Circuit Theory By H. Boylestad and L. Nashelsky

Ref. Book(s):

Electronic Devices and Circuits By Theodore F. Bogart, Jr.

Course Objectives:
One of the main goals of this course is to explain the basic concepts of semi-conductor diode and
its current-voltage relationship. Various applications of junction diode are discussed and various
types of diodes are also explained. Bipolar Junction Transistors (BJTs) and Field-Effect
Transistors (FETs) are evolved as two PN-junction devices. Relations of various currents and
voltages in these transistors are explained in detail. The effect of temperature on these
semiconductor devices is highlighted. Similarly, the working principles of Op-Amps and
MOSFETS are also taught. Their critical parameters impacting design of amplifiers are talked
about in detail. A variety of applications of various types of transistors, Op-Amps and MOSFETS
are dealt with. The course is directly supported with lab experiments embracing the design
principles.

Course Learning Outcomes:

At the end of this course, the students should be able to:
CLO:1. Explain and discuss the basic construction, operation and characteristics of
semiconductor devices (Level: C2)
CLO:2. Apply the acquired knowledge to solve small scale circuits consisting of
semiconductor devices (Level: C3)
CLO:3. Analyze DC and AC response of small signal amplifier circuits using device models
(Level: C4)

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Course Contents:
1. Semiconductor Theory
Introduction.
Intrinsic and Extrinsic Semiconductors.
Doping and energy levels.
2. Diodes
PN junction/ Biased PN junction.
V-I Characteristics.
Load Line and dynamic resistance.
Diode models.
Reverse recovery time and temperature effects.
3. Diode Applications
Half wave and Full wave rectifiers.
Clippers and Clampers.
Logic gates.
4. Bipolar Junction Transistors
Construction, operation and characteristics.
Amplifying action and variation in current gain.
Common Emitter, Common Collector and Common Base Configurations.
Power Ratings.
5. BJT Biasing Circuits
Fixed Bias, Voltage Divider Bias and Emitter feedback Bias Circuits
DC load line and operating point
Biasing circuit design and stabilization
Transistor as a switch
6. BJT Small Signal Analysis
Common Emitter Amplifier
Common Base Amplifier
Common Collector Amplifier
Amplifier Design and Loading effects
7. Field Effect Transistors
JFET Construction and Operation
Transfer characteristics and parameters
8. FET Biasing Circuits
Fixed Bias, Self Bias and Voltage divider Bias
Design of a bias circuit
9. FET Small Signal Analysis
JFET/Depletion MOSFET small-signal model
Common source, common drain and common gate amplifiers
Loading effects and design of amplifier circuits.
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Grading Policy:
S.No.
i.
ii.
iii.
iv.

Grading
Assignments
Quizzes
Mid-term Exam
Final Exam
Total

% of Total Marks
20
20
20
40
100

CLOs
CLO:1

CLO:2

C2

C3

CLO:3

PLOs
PLO:1
(Engineering Knowledge)
PLO:2
(Problem Analysis)
PLO:3
(Design and Development of Solutions)
PLO:4
(Investigation)
PLO:5
(Modern Tool Usage)
PLO:6
(The Engineer and Society)
PLO:7
(Environment and Sustainability)
PLO:8
(Ethics)
PLO:9
(Individual and Team Work)
PLO:10
(Communication)
PLO:11
(Project Management)
PLO:12
(Life Long Learning)

C4

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