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AntennaEffects|VLSIConcepts
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Saturday,July19,2008

AntennaEffects
AntennaEffects:
ModernwaferprocessingusesPlasmaetch(ordryetch). Plasmaisanionized/reactivegasusedtoetch.Itallowssupercontrol
of pattern (shaper edges / less undercut) and also allows several chemical reactions that are not possible in traditional (wet) etch.
Apart from this, several unwanted things happen just because of several plasma processing steps. One of them is the charging
damage.
PlasmachargingdamagereferstotheunintendedhighfieldstressingofthegateoxideinMOSFETduringplasmaprocessing.The
stress voltage that develops across the gate and substrate of a MOSFET during plasma processing basically comes from three
sources.

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Nonuniformdistributionofplasmapotentialacrossthewafer.
Chargingfiltering(shading)duetomicroscopictopographyonthewafer.

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ACeffectsduetothenatureofRFdischargethatsustaintheplasma.
ThestressvoltagesduetoACeffectsarequitesmallinmostcasesandcannotcausedamagebythemselves.Theydo,however,
add to the magnitude of stress voltages developed by either nonuniform plasma potential or topographic filtering of charge or the
sumofboth.

The available charges are the net charges collected from the plasma by the exposed conductor with connection to the gate or
substrate.Bothelectronsandpositiveionsfromtheplasmaareimpingingontheexposedconductorduringprocessing.Depending
on the charge balance condition, the electron flux might not equal the ion flux, a net positive or negative charge collection rate
exists.Thecollectednetchargesarechanneledtothegateasshowninfig.1whereitisneutralizedbythecurrenttunnelingacross
thegateoxide.

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Clearly,thesizeoftheconductorexposedtotheplasmaplaysaroleindeterminingthemagnitudeofthenetchargecollectionrate
andthereforethetunnelingcurrent.Thisisthesocalledantennaeffect.Thearearatiooftheconductortotheoxideunderthegate
istheantennaratio.Theantennaratio,inaroughsense,isacurrentmultiplierthatamplifiesthetunnelingcurrentdensityacrossthe
gateoxide. For a given antenna ratio, a larger tunneling current is supported when the plasma density is higher. Higher tunneling
currentmeanshigherdamage.
Thisantennaeffectcanbeunderstoodinadifferentwayalso.Itoccursduringthemanufacturingprocessandrendersadieuseless.
Duringmetallization(whenmetalwiresarelaidacrossdevices),somewiresconnectedtothepolysilicongatesoftransistorscanbe
left floating (unconnected) until the upper metal layers are deposited.A long floating interconnect (without proper shielding layer of
oxide)canactasatemporarycapacitor,collectingchargesduringfabricationsteps,suchasplasmaetching.Iftheenergybuiltup

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onthefloatingnodeissuddenlydischarged,thelogicgatemightsufferpermanentdamageduetotransistorgateoxidebreakdown.
Inotherwordthe'antenna'isaninterconnect,i.e.,aconductorlikepolysiliconormetal,thatisnotelectricallyconnectedtosilicon,
i.e.,not'grounded',duringtheprocessingstepsofthewafer.Theconnectiontosiliconwouldnormallyprovideanelectricalpathto
bleedoffanyaccumulatedcharges.Iftheconnectiontosilicondoesnotexist,chargesandmaybuildupontheinterconnecttothe
pointatwhichrapiddischargedoestakeplaceandpermanentphysicaldamageresults,e.g.,toMOSFETgateoxides.This
destructivephenomenonisknownasthe'antennaeffect'.

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Simplification:
Chargebuildsup(DC)onthemetalwires(antenna)duringtheapplicationoftheplasmaetch
BecausethegateofaMOSFETislikeacapacitor
Ifthepotentialonthegatereachesacertainvalueitwillbreakdown
Punchthroughoccurs
Thegateisdamagedirreparably
The 'antenna ratio' of an interconnect is used to predict if the antenna effect will occur. 'Antenna ratio' is defined as the ratio
betweenthephysicalareaoftheconductorsmakinguptheantennatothetotalgateoxideareatowhichtheantennaiselectrically
connected.Ahigherratioimpliesagreaterpropensitytofailduetotheantennaeffect.Thiscanresulteitherfromarelativelylarger
areatocollectchargeorareducedgateoxideareaonwhichthechargeisconcentrated.

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ChargeBuildupisaffectedby:
Diffusionpath
ThereisanNPdiodetosubstrateatthedrain/sourceofanyoutputpin
Duringplasmaetchthisdiodeisreversebiasedandathightemp
Thiscausesthediodetobehavelikearesistor
GateArea
Largergate_area==largergatecapacitor
Atfixedcharge,voltagepotentialreducesascapsizeincreases
Reducingthevoltagepreventspunchthrough
DiffusionArea
Biggerdiffusion==Smallerresistor
SmallerRallowsmorecurrenttopass
Wirelength
Longerwiresactasantennastopickupmorecharge
The conditions that lead to antenna formation depend on the technology used to fabricate the chip and must be determined
empirically for each process. Once they have been identified, they can be used to define a set of antenna rules, similar to
conventional DRC rules, that can be coded. Factors these rules need to consider is whether the antenna should be based on the
"top"areaofthemetaloronits"sidewall"area.
Inanaluminumbasedprocess,chargeaccumulationoccursduringtheETCHstep.Thetopofthemetalisprotectedby
aresistduringthisstep,sotheantennarulesforthisprocessshouldbebasedonthemetalsidewallarea.
Incopperbasetechnologies,chargeaccumulationoccursduringCMP(ChemicalMechanicalPolishing).Inthisprocess,
thesidesofthemetalareprotected,sotheantennarulesneedtobebasedonthemetal'stopsurfacearea.
Anumberoftechniquescanbeutilizedtominimizetheantennaeffect.Forexample,theoccurrencesofantennascanbepredicted
and their ratios calculated using design verification and layout software known as 'design rule check' ('DRC') programs. Then by
adjustingthephysicallayoutoftheinterconnects,theantennaratioscanbereducedtoanacceptablelevel.Inaddition,processing
stepsutilizingplasmacanbeoptimizedtoreducethebuildupofchargesonanyantennasthatdoexistondevices.
To avoid antenna problems, you must design all net topologies so that no gate is vulnerable to a large amount of floating charge.
Antennarulesarecommonlyexpressedasaratioofwireareaovergatearea(Aw/Ag)foreachmetalandcut(via)layer.Thisratio
indirectlystateshowmuchfloatingchargeatransistorgatecanhandlebyspecifyinghowmuchwirecanbeconnectedtotheinput
ofthelogicgatebeforeantennaproblemsoccur.

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DesignSolutiontoreduceAntennaEffects:
Routeroptions
Breaksignalwiresandroutetouppermetallayersbyjumperinsertion
Allmetalbeingetchedisnotconnectedtoagateuntilthelastmetallayerisetched.
Dummytransistors
Additionofextragateswillreducethecapacitanceratio.
PFETsmoresusceptiblethanNFETs
ProblemofreverseAntennaEffects.
EmbeddedProtectionDiode
Connect reverse biased diodes to the gate of transistor (during normal circuit operation, the diode does not
affectfunctionality).
Diodeinsertionafterplacementandroute
Connectdiodesonlytothoselayerswithantennaviolations.
Onediodecanbeusedtoprotectallinputportsthatareconnectedtothesameoutputports.

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Mostimportantmethodsarejumperinsertionanddiodeinsertiontoremoveantennaviolation.Wearediscussingthesetwomethods
hereindetail.
Jumper techniques are the most effective method of avoiding antennaeffect problems. Diode insertion can repair the remaining
antennaproblems.However,itiscostlyintermsofcellareasizeanditcomplicatesthenetlistverificationprocess.
JumperInsertion:
Ajumperisaforcedlayerchangefromonemetallayertoanother,andthenbacktothesamelayer.Jumperinsertionbreaksupa
long wire so that the wire connected to the gate input is shorter and less capable of collecting charge, as shown in Figure. The
advantageofjumperinsertionisthatitisfullycontrolledbytheroutingtool.Thedisadvantageisthatitcanpotentiallycontributeto
routingcongestionproblemsinuppermetallayers.Therearealsosituationsforwhichtherearenovalidjumpersolutions.
Figure:JumperInsertionBreaksUpaLongWire

In most of the tools, jumper insertion is performed automatically during the routing. After detailed routing, you can fix antenna
violations manually by inserting jumpers by using commands corresponding to the tool you are using. When you execute those
commands,tooldetectsandfixesantennaviolationsusingjumpersandatailoredripupandreroutestrategy.
TheImportanceofJumperLocationinRepairingAntennaViolations
Figureshowstwonetswiththesameseparationbetweentheinputandoutputpins,butslightlydifferentjumperlocations.Thefirst
onehasanantennaviolation,andthesecondonedoesnot.
Figure:ImpactofJumperLocation

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Thedifferenceisthatthefirstnethasalongmetal1connectiontotheinputpin.Thewireareaasdetectedbytheinputpinofthe
firstnetissignificant,and,therefore,theantennaratioisexceeded.
Thisexampleshowsthatantennaviolationscanbeavoidedthroughtheuseofjumpers(alsoknownasbridges).Ajumperdirects
thenettoahighermetallayerbeforedescendingagain.Intheprocessofmetallization,thepinisconnectedtoasmallamountof
wirearea,exceptonthehighestlayer,avoidinganyantennaproblembelowthatlayer.
Unfortunately, the use of jumpers might only defer the antenna problem to the highest metal layer of the jumper, where antenna
violationsmightstilloccurbecauseallgeometriesofthenetarephysicallyconnectedtoeachother.Forthisreason,itisimportant
thattheoutputpinhavesomeabilitytosolveantennaviolations.
DiodeInsertion
Figure:DiodeInsertedNearaLogicGateInputPin

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As shown in Figure, diode insertion near a logic gate input pin on a net provides a discharge path to the substrate so that builtup
chargescannotdamagethetransistorgate.
Unfortunately, diode insertion increases cell area and slows timing due to the increase of logic gate input load. Moreover, diode

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insertionisnotfeasibleinregionswithveryhighplacementutilization.
Inmostofthetools,diodeinsertionisperformedautomaticallywhenyouusetheroutingcommand.Youcanmanuallyinsertdiodes
using the corresponding tools commands. There are two points in the design flow where you can insert diodes to fix antenna
violations.
InsertingDiodesBeforeDetailedPlacement
Normally,thediodeisaddedonlytothepinsthatneedit.Theantennacheckeriscalledforeachpininquestiontodecidefirst,ifthe
pinhasantennaviolationsandsecond,ifajumperhasfailedintheareaofthepinbecausetheareaisblockedandalargeenough
holedoesnotexist.
InsertingDiodesAfterDetailedPlacement
Afterdetailedrouting,theantennaviolationscanstillexistforvariousreasons.Forexample,therecanbetoomuchcongestionto
insertajumperorthediffusionstrengthsoftheoutputpinsaretooweak.Inthesecases,diodeinsertionisaviablechoice.
Thesemiconductormanufacturergenerallyprovidesthegateareaorsize,andtheantennacheckercalculatestheappropriatewire
areausingthewire(charge)accumulationmethodspecifiedbythemanufacturer.
DesignRulesforSomeCurrentTechnologiesTSMC0.18um
Metalantennaratioisnotcumulative.
Maximumdrawnratiooffieldpolyperimeterareatotheactivepolygateareaconnecteddirectlytoit200.
Whentheprotectiondiodeisnotused,themaximumratioofeachmetal(forM1toM5)perimeterareatotheactivePoly
gatearea400.
AntennaRatio=2[(L+W1)*t]/W2*l
L:floatingmetallengthconnectedtogate
W1:floatingmetalwidthconnectedtogate
t:metalthickness
W2:connectedtransistorchannelwidth
l:connectedtransistorchannellength
DesignRulesforSomeCurrentTechnologiesIBM0.13um
Antennaratioisnoncumulative.
Polyantennaelargerthan100areNOTALLOWED
Floatinggatedeviceswithmetalantennaelargerthan150areNOTALLOWED
EveryNwellisrequiredtobetieddownbyaN+diode
AntennaRules:
Inmostcases,antennarulesareintheformof:
(antennaarea)/(gatearea)<(maxantennaratio)
Gatearea
BooleanANDofthepolyandthediffusionlayers
Recognizedasgateareaofthetransistorsbyessentiallyallfoundries
Antennaarea
Amountofmetalareaattachedtotheinputpin
Calculationmethodvariesfordifferentprocesses
Maxantennaratio
Representsmaxallowedratioofantennaareatogatearea
Calculationmethodvariesfordifferentprocesses
Thereare2waystocalculateantennaarea:
SideWallArea=(W+L)*2*Thickness
PolygonArea=W*L
Calibreantennarules
M6_DIO=NETAREASD>=0.16
A.R.4_A.R.6.M6
{@(M6area/gatearea+ACCUMULATE)>(600inOD2,5500notinOD2)(withouteffectivediode)
@(M6area/gatearea)+ACCUMULATE>Ratio(witheffectivediode)
NETAREARATIOM6M6_DIOHV_GATEGATE>0ACCUMULATEACC_M5
[
!!AREA(M6)*!!AREA(GATE)*
(!AREA(M6_DIO)*(!!AREA(HV_GATE)*(AREA(M6)/AREA(GATE)600)+
!AREA(HV_GATE)*(AREA(M6)/AREA(GATE)5500))+
!!AREA(M6_DIO)*(AREA(M6)/AREA(GATE)AREA(M6_DIO)*45643000))
(!AREA(M6)+!AREA(GATE))*LargeNumber
]
}
ACC_M6=NETAREARATIOM6GATE>=0ACCUMULATEACC_M5
Magmaantennarules:
ruleantennaratiometal_rule$larea_typeareaaccumulation_typepath\
ratios{{{{06000}{0.16e1243072.96456e12}}{METAL6}}
Synopsysantennarules:
define_antenna_rulemode\
diode_mode\
metal_ratio\
cut_ratio
define_antenna_layer_rulemode\
layer\
ratio\
diode_ratio<{v0v1v2v3[v4]}>
Summary:
During the IC manufacturing process, the metal layer is exposed to conditions that lead to the buildup of an electrostatic charge.
Theamountofchargethatbuildsupdependsonanumberoffactorsthemostimportantfromanantennastandpointishowmuch
metal is exposed. As more metal is exposed, the maximum charge that accumulates on the net that the metal is part of also
increases.Thesubstrateremainsatgroundsinceitisconnectedtothefabricationdevice.Asaresultavoltagegradientdevelops
across the gate oxide. When this gradient becomes large enough, it is relieved via an explosive discharge (i.e. "lightning"). The
problemismoresignificantatsmallertechnologiesbecausethedamageresultingfromthedischargeismorelikelytoextendacross
theentirelengthofthegate.
Antenna rule checking is different for every process technology because the method for expressing antenna ratio is not
standardized.
Antenna repair is accomplished by inserting a reversebias diode on the violating net as close to the gates being protected as
practical.Duringnormalchipoperation,thereversebiaspreventselectronsfromflowingfromthenetthroughthediodeandintothe
chip'ssubstrate.Duringfabrication,however,thechargeonthenetcanbuildtothepointwherethevoltagedropacrossthediode
exceeds its breakdown voltage. This voltage is greater than the normal operating voltage, but less than the voltage at which an
electrostatic discharge at the gate can be expected. When this happens, the diode allows electrons to flow from the net to the
substrateandthuslimitshowmuchchargecanaccumulateonthenet.Theprocessisnondestructive,andit'spossiblethatthenet

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coulddischargethroughthediodeseveraltimesduringthefabricationprocess.
Theotherwaytorepairisto"breakup"theantennabyshiftingbrieflytoadifferentmetal.Whenthismetallayerisfabricated,the
long piece on one side is no longer electrically connected to the gate and does not contribute to any antenna effects. When it is
eventuallyconnectedthroughthehigherlevelmetal"bridge,"itisnolongerexposedtothechargeaccumulationandagaindoesnot
contributetoanantennaviolation.
Causesofantennadefects:
Electrostatic charge collection on wires while the metallization is being deposited. (This is usually referred as charge
collectingantennaproblemorsimplyantennaproblem)

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ofanothermetallayer).
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61comments:
Anonymous February5,2011at11:14PM
Iseldomleavecommentsonblog,butIhavebeentothispostwhichwasrecommendedbymyfriend,lotsofvaluabledetails,thanks
again.
Reply

yourVLSI February10,2011at4:13PM
Hi,
NicetoherethatyoulikethisPost.Pleasekeepvisitingmyblogandletmeknowifyouneedanyotherspecificdetail.
Reply
Replies
ankitgoyal April1,2013at3:36PM
Ifyoucanwritesomethingonverilogthanitwillbegreat
Reply

Anonymous March17,2011at2:33PM
seemsyouhaveworkedinalledacompanies..gr8
Reply

qa May16,2011at10:57PM
greatwork,cheeeers,certainlygoodforthefreshers
Reply

yourVLSI May20,2011at11:24AM
thanksqa
Reply

iam August1,2011at6:55PM
Amazingknowledge...wellwrittento...
Reply

Sujata September26,2011at8:33AM
Thanksalotforsharing.Icouldn'thaveunderstoodtheconceptbetterfromanyothersource.

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Reply

Anonymous October4,2011at4:35PM
thanksforthedetailedexplanation...:)
Reply

Anonymous November23,2011at4:38PM
Really,Verygoodanddetailedexplanation.
Goodno.ofwayshasbeenmentionedtoovercometheANTENNAeffect.
Thanks
Reply

$@$! December29,2011at1:04PM
Excellentanalysisandgreatpresentation.
Reply

Anonymous January3,2012at12:39AM
Kudostoyouforgivingsuchdetailedandgraphicalexplanationofthistopic.IunderstoodmanyconceptsrelatedtoAntennaproblem
becauseofthis.
Reply

Anonymous January5,2012at12:24PM
thanks
Reply

Anonymous January25,2012at12:22AM
thank you so much,i would like to know what will happen for hanged metal1 it will not find any discharging path na after metal2
fabricationitmayaidthechargeonmetal1(hanged)andmetal2andhencemaydamagethegateoxidena??canyouplsclarifymore
onit..Thanxinadvance.
Reply
Replies
yourVLSI January26,2012at7:46AM
Youareright.Soifthemetal1hastoomuchchargethatitcandamagethegateoxide,itwilldothatbutifthat'snotthecase
thenitwillwaitformetal2andthenmetal3andsoon.
Sothepointisthemomentaccumulatedchargeissufficienttodestroythrgateoxide,itwilldo.
Reply

Unknown February10,2012at11:10AM
canugivmealnkfordocumentation,pptandabstractforthistopic..iwouldliktogivatechseminaronthis...wilitbegood?
Reply
Replies
yourVLSI February10,2012at11:30AM
hiUnknow,
Itsverydifficultformetogiveyouanypptrightnow.BecauseIdon'thaveanythinghandycurrently.Apartofmyblog,may
bewikkipediawebsitecanhelpyou.
http://en.wikipedia.org/wiki/Antenna_effect
SorrymanThatIamunabletohelpyouregardingthisrightnow.
Reply

Unknown February10,2012at11:11AM
canugivmealnkfordocumentation,pptandabstractforthistopic..iwouldliktogivatechseminaronthis...wilitbegood?
Reply

VLSIfan February21,2012at11:43AM
itsveryusefullformethankyou........canuplzexplainmewhtpropotionuseinanteenaeffect.........
Reply

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Anonymous March7,2012at2:54PM
itsveryusefulltounderstandanteenaconceptGoodwork,anyotherblogs.
Reply

AD April10,2012at10:37PM
Hi
Thisarticleisreallyveryniceandithelpsmetounderstandveryclearly.
IhaveaQUESTION:Insomearticlesihavered,whenatoolputsajogonmetalthenittakesahigheroroneabovemetal.Butnot
loweroronebelowmetal.why?Wouldyoupleaseexplainme.
Thanks
AD
Reply
Replies
holla June4,2014at6:21PM
noucannotgotolowerlevelmetalcbecausewhnthegatesconnectedbyM2andurgettingantennaerror.
ifugoforjumperofm1nearthegate,M1sfabricatedfirstandthenM2sovrgettingerrorfromM2,M1andM2are
connectedandthatmayharmourgate.
Ifugoforjumperofm3nearthegate,M2sfabricatedfirstasatwopiecenearthegateandafterthejumper.
denwefabricatem3sochargesinm2sremovedbeforem3fabrication,soitwillnotharmthegate.
Reply

sangeeta April25,2012at3:58PM
Hi,
Thanksalot.
goodexplanation.
Reply

NeethuA July8,2012at4:48PM
Hi,ifweareconnectingtheantennametaltohighermetal,thetopmetalstillcontributestoantennaeffectright?
Reply
Replies
yourVLSI July10,2012at2:30PM
Yes.Youareright

Anonymous August23,2012at8:46AM
See,therewillbeasmallchancethattopmetalwillnotcontributetotheantenna.Thisisbecausetopmetallengthusedas
jumperissmall.Unlesstopmetal,whichisusedinthesamenet(oflowermetal,sufferingantenna)andusedindifferent
location,adduptocrossantennaratioforthatmetallayer(topmetal),itwillnotnothappen.
Reply

kishan November4,2012at7:06PM
HelloExpert
Ihaveonemoredoubtregardingantennaeffect
ifoneofthemetalisconnectedtodrainandotherendconnectedto
gate(exinverterconnectedtoanotherinverter)isthereaneedfor
antennaprotection??becauseoneendisconnectedtodiffusionwhich
bydefaulthasaparasiticreversebiasdiode(bwdiffusionand
substrate)soifeelitisprotectedbydefaultamiright?
Reply
Replies
yourVLSI November8,2012at12:46PM
Kishan,
YouhavetogoforAntennaprotectioninthiscasealso.Seeinlaymanlanguagewhythereisaproblem.Whenever(even
forainstant)ifthereexistenoughchargeonthegate(whichcomesfromthewire)whichcandamageitweshouldgofor
theAntennaprotection.NowtheotherendcanbeconnectedtoanywhereItdoesn'tmatter.Itallmatterhowlongthewire
isifwireistoolongandafterthatitsconnectedtogroundeveninthatcasetheremaybeaproblemofAntenna.
Actuallytheseproblemscomesduringthefabricationsothesehavenomajorrelationshipwiththelogicalconnectionand
whateveryouaretalking..isthelogicalconnection.
Ihopeyougotmypoint.Stilliftheseisanydoubtfeelfreetoposthere.

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kishan November9,2012at10:29PM
Thiscommenthasbeenremovedbytheauthor.

kishan November9,2012at10:43PM
Thanksalotexpertbutfirststepinfabissubstrate,diffusion,polyandmetalsoareversebiasdiodeisalreadyformed
therewhichcanbreakdownathighreversevoltageandformalowimpedancepathtosubstratesodontthechargesleak
awayduringtheprocess?
Thanksandregards

holla June4,2014at6:12PM
yes.. we dont need diode or jumper in dis case. It will go through the diffusion. we need diode only when the gate s
connectedbyM1(lowerlayer)anddrainsconnectedbyM2(higherlayer)andantennaerrorsfromM1(lowerlayer)indis
caseonlyvneeddiodeorjumper.

SagarPatel July23,2014at3:02PM
HiKishan,
SupposethenetisroutedthroughM1M5layersandit'shavingantennaviolationonM3.
SowhileM3ismanufacturedthere'sexcesschargeonit.ButM4andM5aren'tmanufacturedyet.Sothepieceofneton
M3whichishavingexcesscharge,isn'tconnectedtothedriver'soutputpin(diffusion)yet.Hencethere'snopathforthe
chargetogointothediffusion.
BythetimeM4andM5aremanufactured,thechargeonM3isalreadygrounded(Idon'tknowexactlyhowthough),and
there'snoantennaviolationanymore.
CorrectmeifIamwrongsomewhere.
Thanks,
Sagar
Reply

Anonymous November26,2012at1:13PM
hi,
mayiknowinadesignwithsevenlayersisthereanychanceofgettingantennaviolationsatseventhlayer..
sayifexiststhenhowtoovercomewiththatviolations
asthereisnoroomtoinsertdiode..whatcouldbetheotherchanceofremovingit..pleaseletmeknow..
Reply
Replies
yourVLSI November27,2012at12:30PM
there are chances any where and any layer that's the reason you can see that the foundry have rules for all the
layers...
Nowforsuchviolationsalwayspreferjumpers.
"Usingjumperstobreakuplongwiresconnectedtogates".
ItsamostlyrecommendedmethodologythatforM1orMaxM2UseDiodeandforupperlayeruseJumpers.
Reply

Anonymous January29,2013at11:24PM
Hello,
Ihaveaquestionabouttheantennarules....ihavobservedthatthetopmostlayerwillhavetheantennaratioveryless[0.1]...canyou
plstellmewhyisthat?Allotherlayerswillhaveantennaratiosas200,300etc...ButwhyonlyTopmostlayerhaslessratio??
Reply

Anonymous May7,2013at11:29AM
Reallyhelpfulthankyouforsharingit!!!
Reply

Anonymous May13,2013at7:48PM
verymuchhelpful,wellexplained,clearedmostofmydoubtsonantennaeffect
Reply

mayankgupta September30,2013at2:16PM

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Reply

Anonymous October3,2013at8:57AM
Superbxlanation...thanku
Reply

Anonymous February24,2014at5:09PM
Hiexpertscoulduplzexplaindetaildlyregordingantennadideworking..
Thanksinadvance.
Regards,
Siddharth.
Reply

Anonymous March19,2014at12:16AM
ReallygoodexplanationtounderstandtheAntennaIssue,Ihaveonequestion,IhaveantennaViolationonTopMetalLayerandmy
designisverycongestedsoIcannotputtheAntennaDiode.UsuallyforJumperyoumovetohighermetallayerandthencomedown
tolowermetalLayer.InthisscenariocanJumptoLowermetalLayerandthenagaingoingbacktoTopmetallayerwillfixtheAntenna
Violationorweneedtotrysomethingelse.
Reply
Replies
holla June4,2014at6:03PM
noucannotgotolowerlevelmetalandthentotoplevel..cbecausewhngatesconnectedtom3thatsdonefirstafterthe
m4(considertoplayer)isdone.sobothareconnectedanderroriscomingfromm4(toplayer).souhavtoconnectadiode
ortrytoreducethelengthoftoplayer.
Reply

PREETHESHK May8,2014at12:15AM
Niceexplanation.NoneedreferanythingelseforunderstandingAntennaeffect.Nicework!!!!
Reply

Anonymous May27,2014at11:43PM
Ithinkyouguysdidanexcellentjobexplainingtheantennaeffect.Iwillbelookingforwardtomoreinformation
asalayouttechnician.Thiswillcontinuetohelpmeemensely.GreatWork!!andThankYou
Reply

KrishnaSoorannavar June16,2014at12:24PM
Thiscommenthasbeenremovedbytheauthor.
Reply

Anonymous June16,2014at12:26PM
Greatexplanation......:)
ThisdatamuchbetterthanArtofAnalogLayoutAlanHestings
Reply

srinivas June28,2014at7:39PM
Thanksalot...:)
Reply

Anonymous September10,2014at6:14AM
CouldyouexpalinhowtochoosediodespecificationsorlayoutareaforAntennaeffect?
Reply

Anonymous October10,2014at10:36AM
Canyoupleaseexplainthedetailedoperationofantennadiode???
Reply
Replies
Anonymous October10,2014at10:40AM
Yes,itooneedsomeexplanationsregardingtheoperationofantennadiode.

http://www.vlsiexpert.com/2008/07/antennaeffects.html

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Reply

Anonymous December1,2014at5:16PM
canyoupleasetellmewhyhighermetallayersdoesnotaccumulatecharge?
Reply

Anonymous August27,2015at1:30AM
Ijustgetartictleabouttunneldiode,ifyouneedtogetmoreinformationaboutthiselectronicdevicecheckthis.
Reply

Anonymous December2,2015at5:41PM
Hi
Agreatarticletounderstandantennaeffect.Thanksforthedetailedexplanantion.
Ihaveonequeryregardinguseofantennadiode.Whattypeofdiodesareprefarable(p+/n+diode)?andHowareweconnectingit?
Thanks
Reply
Replies
Sanam December30,2015at11:58AM
Hi,
WepreferNMOSdevicesasthediodes.SourceandDrainconnectedtoantennaaffectedsignal,Gtaeandsubstarteare
connectedtoGND.
Reply

Sanam December30,2015at11:56AM
Pleaseexplaintheantennadiodefunctioningindetail?
Reply

Anonymous February8,2016at1:59AM
cheers..keepupthegoodwork!!!!
Reply

Unknown February12,2016at2:45PM
Ihaveonedoubtondiodeinsertioninreversebiasforantennaeffect.whywehavetoconnectdiodeinreversebiasonly.plsexplain
Reply

Unknown March2,2016at8:43AM
Nicegdexplanation
Reply

AbubackerSiddique March4,2016at6:12PM
Canyoupleaseexplainthethreesourcesofthestressvoltagementioned?
Reply

MadhuSwamy March9,2016at5:29PM
Hii,
while calculating the maximum antenna ratio in the formula, i have seen a parameter called "Diode Protection" (DP) value, when
diodesareusedforpreventingantennaviolations.itwouldbeveryhelpfulifyoucouldexplainthat.ihavereadsomewhere,itisa
ratiothatcanrangefrom0to1e6.canyoupleasetellmewhatsthatratioisandhowthevalueisdeterminedforpreventingviolations.
Thankyouverymuchforthispost..veryuseful
Reply

Unknown May20,2016at3:51PM
Hi,niceexplanationforAntennaeffectgiven.ButicoundtgettheOperationoftheAntennaDiode,inthisscenario.Isisashottkey
diode/tunneldiode?oranormaldiode,whichwillbedamagedifitconductsinreversebias.
Reply

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