MMD70R600P Datasheet

MMD70R600P
700V 0.6 N-channel MOSFET
Description
MMD70R600P is power MOSFET using magnachips advanced super junction technology that can
realize very low on-resistance and gate charge. It will provide much high efficiency by using
optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to
designers as well as low switching loss.

Key Parameters

Package & Internal Circuit

Parameter

Value

Unit

VDS @ Tj,max

750

RDS(on),max

0.6

VTH,typ

ID

7.3

Qg,typ

23

nC

G
G

Features

Low Power Loss by High Speed Switching and Low On-Resistance

100% Avalanche Tested

Green Package Pb Free Plating, Halogen Free

Applications

PFC Power Supply Stages

Switching Applications

Adapter

Motor Control

DC DC Converters

Ordering Information
Order Code

Marking

Temp. Range

Package

Packing

RoHS Status

MMD70R600PRH

70R600P

-55 ~ 150

TO-252

Reel

Halogen Free

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MMD70R600P Datasheet

Absolute Maximum Rating (Tc=25 unless otherwise specified)

Parameter

Symbol

Rating

Unit

Drain Source voltage

VDSS

700

Gate Source voltage

VGSS

30

7.3

TC=25

4.6

TC=100

Continuous drain current

ID

Pulsed drain current(1)

IDM

21.9

Power dissipation

PD

71

Single - pulse avalanche energy

EAS

142

mJ

MOSFET dv/dt ruggedness

dv/dt

50

V/ns

Diode dv/dt ruggedness

dv/dt

15

V/ns

Tstg

-55 ~150

Tj

150

Storage temperature
Maximum operating junction
temperature
1)
2)

Note

Pulse width tP limited by Tj,max

ISD ID, VDS peak V(BR)DSS

Thermal Characteristics
Symbol

Value

Unit

Thermal resistance, junction-case max

Rthjc

1.75

/W

Thermal resistance, junction-ambient max

Rthja

62.5

/W

Parameter

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MMD70R600P Datasheet

Static Characteristics (Tc=25 unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Drain Source
Breakdown voltage

V(BR)DSS

700

VGS = 0V, ID=0.25mA

VGS(th)

VDS = VGS, ID=0.25mA

Zero Gate Voltage

Drain Current

IDSS

VDS = 700V, VGS = 0V

Gate Leakage Current

IGSS

100

nA

VGS = 30V,

RDS(ON)

0.54

0.6

VGS = 10V, ID = 2.1A

Gate Threshold Voltage

Drain-Source On
State Resistance

Test Condition

VDS =0V

Dynamic Characteristics (Tc=25 unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Input Capacitance

Ciss

681

Output Capacitance

Coss

34.9

Unit

pF
Reverse Transfer Capacitance

Crss

470

Effective Output Capacitance

Energy Related (3)

Co(er)

22

Turn On Delay Time

td(on)

14.4

tr

27.6

Rise Time
Turn Off Delay Time

td(off)

68

tf

26

Total Gate Charge

Qg

23

Gate Source Charge

Qgs

4.3

Gate Drain Charge

Qgd

13

Gate Resistance

RG

3.2

Fall Time

Test Condition

VDS = 25V, VGS = 0V,

f = 1.0MHz

VDS = 0V to 560V,
VGS = 0V,f = 1.0MHz

ns

VGS = 10V, RG = 25,

VDS = 350V, ID = 7.3A

nC

VGS = 10V, VDS =560V

ID = 7.3A

VGS = 0V, f = 1.0MHz

3) Co(er) is a capacitance that gives the same stored energy as COSS while VDS is rising from 0V to 80% V(BR)DSS

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MMD70R600P Datasheet

Reverse Diode Characteristics (Tc=25 unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Continuous Diode Forward

Current

ISD

7.3

Diode Forward Voltage

VSD

1.4

Reverse Recovery Time

trr

344

ns

Reverse Recovery Charge

Qrr

4.3

Reverse Recovery Current

Irrm

13.4

Jun. 2014 Revision 1.0

Test Condition

ISD = 7.3 A, VGS = 0 V

ISD = 7.3 A
di/dt = 100 A/s
VDD = 100 V

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MMD70R600P Datasheet

Characteristic Graph

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MMD70R600P Datasheet

Jun. 2014 Revision 1.0

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MMD70R600P Datasheet

Jun. 2014 Revision 1.0

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MMD70R600P Datasheet
Test Circuit
Same type as DUT

VGS

Qg

100K
10V
10V
+

Qgs

VDS

Qgd

1mA

DUT

10V
Charge

Fig15-2. Gate charge waveform

Fig15-1. Gate charge measurement circuit

trr
DUT

IFM

IF

0.5 IRM

+
V
- DS
IS

tb
0.25 IRM

di/dt

Rg
10K

ta

0.75 IRM

IRM

Same type as DUT

VDD

VR

Vgs 15V

VRM(REC)

Fig16-1. Diode reverse recovery test circuit

Fig16-1. Diode reverse recovery test waveform

ID
DUT

VDS

VDS
Rg
25

90%

RL

Vgs

10%

tp

+
VDD
VGS

Td(on)

tr

Td(off)

ton

Fig17-1. Switching time test circuit for resistive load

tf

toff

Fig17-2. Switching time waveform

IAS
DUT
VDS

BVDSS
tp

Rg
L

Vgs

tAV
IAS

VDD
tp

VDS(t)

+
VDD
Rds(on) * IAS

Fig18-1. Unclamped inductive load test circuit

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Fig18-2. Unclamped inductive waveform

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MMD70R600P Datasheet
Physical Dimensions
TO-252 (D-PAK) , 3L
Dimensions are in millimeters, unless otherwise specified

Worldwide Sales Support Locations

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MMD70R600P Datasheet

DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Sellers customers using or selling Sellers products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.

MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product.
is a registered trademark of MagnaChip
Semiconductor Ltd.
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