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application of magnetic field in a direction which is perpendicular to the direction of the current. [2]
P
(b) (i)
t
- - FB=Beve
Diagram
[1]
I
E
H
v
V
d
E
F =eE
+
+
Q
B
- The magnetic force Fm acts on electrons by the magnetic field will deflect electrons to the upper side of
the semiconductor whereas the lower surface of the semiconductor is induced positively. [1]
-This result in a potential difference V between the two sides and an electric field occurs across QP. This
electric field will produce an electric force Fe acts on the electrons in the direction against the magnetic
force FB as shown in the diagram.
[1]
- The magnitude of Fe will increase as the electric field E increases due to more electrons deflected to the
upper side of the semiconductor. However ,this deflection process of electrons will stop when FB = Fe and
a steady p.d., VH will produce across PQ.
FB = Fe
[1]
evB = eE
Bv = E
Substitute v = I/Ane and E = VH/d
B(
V
) H
Ane
V
d
ne(td )
BId
H
B
VH I
net
[1]
where A t d
BId
neA
[1]
(ii) Metal has much more number of charges per volume, n than semiconductor. Since VH is inversely
proportional to n according to the above equation, therefore the value of Hall voltage, VH produced in
semiconductor is bigger and more obvious than in the metal.
[2]
(iii) The pointer of the galnanometer will deflect to reverse direction or to the right hand side because the Hall
Effect will produce a reverse p.d across the PQ due to the magnetic force will deflect positive charge carriers
(Holes) to the upper side of the semiconductor whereas the lower surface of the semiconductor is induced
negatively.
[3]
(iv)
Use
BI
BI
nqt
3
(4.5 10 )
VH qt
(2.0)(250 10 )
3
(10.510 )(1.60 10
19
[1]
22
6.6 10 m
[1]
CT
C1
C2
1
1
1
CT
510
CT = 3.33F
1
2
C T VT
2
.. 1
........ 1
.. 1
1
= (3.33F )(10 2 )
2
-4
= 1.67 x 10 J
(c) (i)
. 1
. 1
.. 1
=
c
2fCT =
398
.. 1
Vo
=
.. 1
(ii)
Io
X
c
10
389
= 0.025 A
or
rad
2
. 1
(iii)
For
st
quarter,
capacitor
is
charged,
energy
is
stored
nd
or
in
capacitor