AP4439GMT-HF

Halogen-Free Product

Advanced Power
Electronics Corp.

P-CHANNEL ENHANCEMENT MODE

POWER MOSFET

Simple Drive Requirement

SO-8 Compatible
Lower Gate Charge

BVDSS
RDS(ON)
ID

-30V
10m
-58A

RoHS Compliant & Halogen-Free

S
D

Description
AP4439 series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and fast
switching performance. It provides the designer with an extreme efficient
device for use in a wide range of power applications.
The PMPAK 5x6 package is special for voltage conversion application
using standard infrared reflow technique with the backside heat sink to
achieve the good thermal performance.

D
D

PMPAK 5x6

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

-30

VGS

Gate-Source Voltage

+25

ID@TC=25

Continuous Drain Current (Chip), VGS @ 10V

ID@TA=25
ID@TA=70

-58

-18.5

-14.8

-200

Continuous Drain Current , VGS @ 10V

Continuous Drain Current , VGS @ 10V
1

IDM

Pulsed Drain Current

PD@TC=25

Total Power Dissipation

50

PD@TA=25

Total Power Dissipation

TSTG

Storage Temperature Range

-55 to 150

TJ

Operating Junction Temperature Range

-55 to 150

Thermal Data
Symbol
Rthj-c
Rthj-a

Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient

Data and specifications subject to change without notice

Value

Unit

2.5

/W

25

/W
1
201205211

AP4439GMT-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)

Parameter

Test Conditions

Drain-Source Breakdown Voltage

Static Drain-Source On-Resistance

Min.

Typ.

Max. Units

VGS=0V, ID=-250uA

-30

VGS=-10V, ID=-20A

10

VGS=-4.5V, ID=-12A

11

15

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=-250uA

-1

-1.4

-3

gfs

Forward Transconductance

VDS=-10V, ID=-20A

28

IDSS

Drain-Source Leakage Current

VDS=-24V, VGS=0V

-10

uA

IGSS

Gate-Source Leakage

VGS=+20V, VDS=0V

+100

nA

Qg

Total Gate Charge

ID=-20A

30

48

nC

Qgs

Gate-Source Charge

VDS=-15V

nC

Qgd

Gate-Drain ("Miller") Charge

VGS=-4.5V

15

nC

td(on)

Turn-on Delay Time

VDS=-15V

11

ns

tr

Rise Time

ID=-20A

ns

td(off)

Turn-off Delay Time

RG=3.3

100

ns

tf

Fall Time

VGS=-10V

65

ns

Ciss

Input Capacitance

VGS=0V

2750 4400

pF

Coss

Output Capacitance

VDS=-15V

490

pF

Crss

Reverse Transfer Capacitance

f=1.0MHz

420

pF

Rg

Gate Resistance

f=1.0MHz

5.3

10.6

Min.

Typ.

Max. Units

Source-Drain Diode
Symbol

Parameter
2

Test Conditions

VSD

Forward On Voltage

IS=-20A, VGS=0V

-1.2

trr

Reverse Recovery Time

IS=-10A, VGS=0V,

30

ns

Qrr

Reverse Recovery Charge

dI/dt=100A/s

24

nC

Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.

AP4439GMT-HF
120

200

T C =25 o C

-10V
-7.0V
-6.0V
-5.0V
V G = -4.0V

100

-ID , Drain Current (A)

-ID , Drain Current (A)

160

T C = 150 o C

120

80

80

-10V
-7.0V
-6.0V
-5.0V
V G = -4.0V

60

40

40
20

0
0

12

16

-V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

12

1.6

I D = -20A
V G = -10V

I D = -12 A
o

T C =25 C
11

1.4

Normalized RDS(ON)

RDS(ON) (m)

-V DS , Drain-to-Source Voltage (V)

10

1.2

1.0

0.8

0.6
2

10

-50

-V GS , Gate-to-Source Voltage (V)

50

100

150

T j , Junction Temperature ( C)

Fig 3. On-Resistance v.s. Gate Voltage

Fig 4. Normalized On-Resistance

v.s. Junction Temperature

20

2.0

I D = -250uA
1.6

Normalized -VGS(th)

-IS(A)

16

12

T j =150 o C

T j =25 o C

1.2

0.8

0.4

2.01E+09
0.0

0.2

0.4

0.6

0.8

1.2

-V SD , Source-to-Drain Voltage (V)

Fig 5. Forward Characteristic of

Reverse Diode

1.4

-50

50

100

150

T j , Junction Temperature ( o C)

Fig 6. Gate Threshold Voltage v.s.

Junction Temperature
3

AP4439GMT-HF
f=1.0MHz

5000

10

4000

C (pF)

-VGS , Gate to Source Voltage (V)

I D = -20 A
V DS = -15V

3000

C iss

2000

1000

C oss
C rss
0

10

20

30

40

50

60

Q G , Total Gate Charge (nC)

13

17

21

25

29

-V DS , Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics

Fig 8. Typical Capacitance Characteristics

Normalized Thermal Response (Rthjc)

1000

Operation in this area

limited by RDS(ON)

100

-ID (A)

100us

1ms

10

10ms
100ms
DC

T C =25 o C
Single Pulse

Duty factor=0.5

0.2

0.1

0.1
0.05

PDM

t
T

0.02

Duty factor = t/T

Peak Tj = PDM x Rthjc + T c

0.01

Single Pulse

0.01

1
0.1

10

0.00001

100

0.0001

0.001

0.01

0.1

10

-V DS , Drain-to-Source Voltage (V)

t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area

Fig 10. Effective Transient Thermal Impedance

100

80

V DS =-5V
T j =25 o C

T j =150 o C
-ID , Drain Current (A)

-ID , Drain Current (A)

80

60

40

60

40

20
20

2.01E+09
0

0
0

-V GS , Gate-to-Source Voltage (V)

Fig 11. Transfer Characteristics

25

50

75

100

125

150

Tc , Case Temperature ( C )

Fig 12. Maximum Continuous Drain Current

v.s. Case Temperature
4