DOC/LP/01/28.02.

02
LESSON PLAN
Sub Code & Name: EC 6201 ELECTRONIC DEVICES
Unit : I
UNIT I

Branch : EC

Semester : II

LP EC6201
LP Rev. No: 00
Date:16/01/2014
Page 01 of 06

SEMICONDUCTOR DIODE

PN junction diode, Current equations, Diffusion and drift current densities, forward and reverse bias
characteristics, Switching Characteristics.
Objective: To acquaint the students with the construction, theory and operation of PN junction diode.
Session
No.

Topics to be covered

Time Ref.

Teaching
Method

Introduction to the syllabus, Atoms, Atomic Models, Atomic

1.

50m

1,4,5

BB

50m

1,4,5

BB

50m

1,4,5

BB

50m

1,4,5

BB

50m

1,4,5

BB

50m

1,4,5

BB

Energy band
Classification of solids based on energy band theory (insulators,
2.
conductors and semiconductors- Types)
Mobility and conductivity, Intrinsic Semiconductors Electrons
3.
and Holes in the semiconductors.
Extrinsic semiconductors Donor and Acceptor impurities, PN
4.
junction Open circuited
PN junction Diode Reverse and Forward bias, VI
5.
characteristics
Current components in PN diode-Diode current, Reverse
6.
saturation current, Majority carrier current components
7.

Current Equations Diffusion and Drift current

50m

1,4,5

BB

8.

Switching Characteristics of PN Diode

50m

1,4,5

BB

9.

Tutorial

50m

1,4,5

BB

DOC/LP/01/28.02.02
LESSON PLAN
Sub Code & Name: EC 6201 ELECTRONIC DEVICES
Unit : II

Branch : EC

LP EC6201
LP Rev. No: 00
Date:16/01/2014
Semester : II Page 02 of 06

UNIT II

BIPOLAR JUNCTION

NPN - PNP Junctions - Early effect - Current equations Input and Output characteristics of CE, CB,
CC - Hybrid - model - h-parameter model, Ebers Moll Model- Gummel Poon-model, Multi Emitter
transistor.
Objective: To acquaint the students with the construction, theory and operation of Bipolar Junction
Transistors.

Session

Topics to be covered

Time

Ref.

No.

Teaching
Method

10.

NPN - PNP Junctions

50m

1,4,5

BB

11.

Early effect

50m

1,4,5

BB

12.

Current equations

50m

1,4,5

BB

13.

CB - Input and Output characteristics

50m

1,4,5

BB

14.

CE - Input and output characteristics

50m

1,4,5

BB

15.

Hybrid - model, h-parameter model

50m

1,4,5

BB

16.

Ebers Moll Model

50m

1,4,5

BB

17.

Gummel Poon-model

50m

6,7

OHP

18.

Multi Emitter transistor

50m

6,7

OHP

CAT I

180m

DOC/LP/01/28.02.02
LESSON PLAN
Sub Code & Name: EC 6201 ELECTRONIC DEVICES
Unit : III
UNIT III

Branch : EC

LP EC6201
LP Rev. No: 00
Date:16/01/2014
Semester : II Page 03 of 06

FIELD EFFECT TRANSISTORS

JFETs Drain and Transfer characteristics - Current equations - Pinch off voltage and its significance
MOSFET - Characteristics - Threshold voltage - Channel length modulation, D-MOSFET, E-MOSFETCurrent equation - Equivalent circuit model and its parameters, FINFET, DUAL GATE MOSFET.
Objective: To acquaint the students with the construction, theory and operation of field effect transistors.

Session Topics to be covered

Time Ref.

Teaching

19. Introduction to Field Effect Transistors, Construction

50m

1,4,5

Method
BB

and Operation of JFETs

20. JFETs Drain and Transfer characteristics, JFET parameters
21. Expression for Saturation Drain Current, Pinch-off voltage

50m
50m

1,4,5
1,4,5

BB
BB

and its significance

22. MOSFET Construction and Operation
23. Characteristics of D-MOSFET, E-MOSFET
24. Threshold Voltage, Effect of Channel Length Modulation -

50m
50m
50m

1,4,5
1,3,5
1,3,5

BB
BB
BB

D-MOSFET, E- MOSFET
25. Current Equation Equivalent Circuit Model and its parameters 50m

1,3,5

BB

26. FINFET

50m

6,7

OHP

27. Dual Gate MOSFET

50m

6,7

OHP

No.

DOC/LP/01/28.02.02
LESSON PLAN
Sub Code & Name: EC 6201 ELECTRONIC DEVICES
Unit : IV

UNIT IV

Branch : EC

SPECIAL SEMICONDUCTOR DEVICES

LP EC6201
LP Rev. No: 00
Date:16/01/2014
Semester : II Page 04 of 06

Metal-Semiconductor Junction- MESFET, Schottky barrier diode - Zener diode - Varactor diode Tunnel
diode- Gallium Arsenide device, LASER diode, LDR.
Objective: To study about the special semiconductor devices.

Session
No.

Topics to be covered

Time

Ref.

Teaching
Method

28.

Metal-Semiconductor Junction

50m

BB

29.

MESFET

50m

5,6,7

OHP

30.

Schottky barrier diode

50m

1,5

BB

31.

Zener diode

50m

1,2,4,5

BB

32.

Varactor diode

50m

1,2,4,5

BB

33.

Tunnel diode

50m

1,2,4,5

BB

34.

Gallium Arsenide device

50m

5,6,7

BB

35.

LASER diode

50m

BB
5,6,7

36.

LDR

50m

CAT-II

180m

5,6,7

OHP

DOC/LP/01/28.02.02
LESSON PLAN
Sub Code & Name: EC 6201 ELECTRONIC DEVICES
Unit : V
UNIT V

Branch : EC

POWER DEVICES AND DISPLAY DEVICES

Semester : II

LP EC6201
LP Rev. No: 00
Date:16/01/2014
Page 05 of 06
9

UJT, SCR, Diac, Triac, Power BJT- Power MOSFET- DMOS - VMOS. LED, LCD, Photo transistor,
Opto Coupler, Solar cell, CCD.
Objective: To acquaint the students with the construction, theory and operation power control devices,
LED, LCD, and other Opto-electronic devices.

Session

Topics to be covered

Time

Ref.

Teaching

No.

Method
37.

UJT

50m

1,4,5

BB

38.

SCR

50m

1,4,5

BB

39.

DIAC

50m

1,4,5

BB

40.

TRIAC

50m

1,4,5

BB

41.

Power BJT

50m

6,7

BB

42.

Power MOSFET DMOS,VMOS

50m

6,7

BB

43.

LED, LCD

50m

6,7

BB

44.

Phototransistor, Optocoupler

50m

2,6,7

BB

45.

Solar cell, CCD

50m

2,6,7

BB

DOC/LP/01/28.02.02
LESSON PLAN
Sub Code & Name: EC 6201 ELECTRONIC DEVICES

LP EC6201
LP Rev. No: 00
Date:16/01/2014
Semester : II Page 06 of 06

Branch : EC
Course Delivery Plan:
Week

1
I

Units

2
II

1 1

3
II

4
II

5
II

6
II

7
II

8
II

9
II

10
II

11
II

12
II

13
II

14
II

C
C
1 1 1 1 2 2 2 2 2 2 A 3 3 3 3 3 4 4 4 4 A 5 5 5
T
T
1
2

TEST - I

TEST - II

TEST - III

TEST - IV

TEST - V

15
II

5 5

TEST - VI

II

TEST - VII

TEXT BOOKS
1. Donald A Neaman, Semiconductor Physics and Devices, Third Edition, Tata Mc Graw Hill Inc., 2007.

REFERENCES
2. Yang, Fundamentals of Semiconductor devices, McGraw Hill International Edition,

1978.

3. Robert Boylestad and Louis Nashelsky, Electron Devices and Circuit Theory Pearson Prentice Hall,
10th edition,July 2008.
4. R.S.Sedha., A Text Book of Applied Electronics, S.Chand Publications, 2002.

5. Salivahanan. S, Suresh Kumar. N, Vallavaraj.A, Electronic Devices and circuits, First Edition, Tata
McGraw- Hill, 1999.
6. http://www.allaboutcircuits.com
7. www.radio-electronics.com
Prepared by

Approved by

Mr.S.R.Balasubramanian,
Ms.T.J.Jeyaprabha,
Ms.C.Gomatheeswari Preethika.
AP
16/01/2014

Dr. S. Ganesh Vaidyanathan

Signature
Name
Designation
Date

HOD, Department of ECE

16/01/2014