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LETTERS
1093
PROCEEDIKGS
CONCLUSIOK
Our work shows that classical calculations of a microwave mixer
diode performances are still valid with an X band intermediate frequency, and that theygive a good value for the conversion loss.
Another interest of microwave intermediatefrequencyin
receivers is the drastic decrease of local oscillator noise, and the large
pass band (absolute value) which may be used. This is specially useful in radar systems.3
Smaller conversion loss may be obtainable with junction diodes.4
We think that we can improve these results by trying varactors
and tunnel diodes as microwave mixers.
MME. LIGEON
E. PIC
Ecole Nationale Superieure d'Electronique
University of Grenoble
Grenoble, France
8 H. ALlaries. "Une installation de radar pour ondes de 4 mm." Rro. Technique
PhiliDS. vol. 25. no. 8 . DD. 209-222. 1963-1964.
4 D..T. Y o k g and-J. C. I&,'
'Millimeter frequency conversion using Au-8;
type GaAs Schottky barrier epitaxial diodes with a novel contacting technique,
Proc. I E E E (Conespondcncc). voL 53, pp. 2130-2131. December 1965.
Operation of a M O S Transistor as a
Variable Resistor
An FET transistor, operating below saturation, can perform the
function of a variable resistor within a limited voltage range. This
restriction is due to the asymmetry and nonlinearity of its characteristics, especially for reverse drainpolarity. It has been shown
elsewhere that in the case of the junction FET a perfect symmetry
and a remarkable improvement in linearity is achieved if half of the
drain voltage is fed back to the gate [ l ] , [2]. The following work
shows that the same situation holds for a MOS transistor if the substrate is kept floating.
Let us assumea MOS n-channel enhancementtransistor,
as
shown in Fig. l(a). (For a +channel device reverse all voltage and
current polarities.) Before saturation is reached, the drain-current
I D ,as a function of the drain-voltage V D ,is given by [SI,
where
and
VD
p=carrier mobility
Co=gate oxide capacitance
L = channel length.
vG'=V a + - T
(1) becomes
I D = A ( V o - VTIVD
- VT = VD
(2)
and the characteristics are ideally linear. Under this condition the
drain-source immittance behaves as a pure resistor R, equal to the
previous I ,
R = A(Vc 1- V T )
IEEE
THE
OF
PROCEEDISGS
AUGUST
200 m v l s q u a r e
200 m v l s q u a r e
(b) The Same as Fig. 2(a) but with 50 percent feedback from drain to gate
a s shown in Fig. 1(b)
2 V 1s q u a r e
2 Vlsquare
VO - VT = 0.
(8)
VDl
k 2(v0 - V T )
(9)
The positive pinch-off occurs a t the drain side and the negative
at the source side, this being possible due to the floating substrate.
( D )with
Figures l(c), 2(a), and2(b), show the characteristics l ~ = f V
and without current feedback for the same reverse gate bias
( V G - V T ) .Beyond pinch-off, the conventional pentode characteristics
are no longer possible, the feedback action linearly changing the gatevoltage and consequently the drain-current. In all cases high value
resistors ( > 2 Mn) have been used for the feedback network in order
to avoid shunting of the drain-source resistance.