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I. INTRODUCTION
Fully integrated microsystems and system-on-chip concepts
are currently under investigation in many different sections
of microelectronic industry and MEMS.
However,
biomedical microsystems are among those that probably get
the highest benefits from progresses in this area especially
when they are intended to be implantable. Almost all of
these implantable devices except a small category, which
need large drug reservoirs out of the body, have become
wireless to improve patient's safety and comfort level.
Some of these wireless implants, which naturally have very
low power requirement like pacemakers include a DC
power source in the form of rechargeable or long-lifetime
disposable batteries and the rest of them need to be powered
by magnetic inductive coupling between an extracorporeal
transmitter coil and an intemal receiver coil inside the
implanted device. Transcutaneous electromagnetic power,
which is delivered by the extemally generated RF magnetic
field in the MHz range, generates a sinusoidal voltage in the
receiver tank circuit [ 1,2]. The next block should be a wideband rectifier to convert the AC signal to an unregulated DC
supply and finally there is a regulator block, which rejects
high frequency ripples as well as eliminated power supply
output voltage variation in case of load current variations.
However, in many recent biomedical implant designs, the
414
2"6Annual International IEEE-EMBS Special Topic Conference on Microtechnologies in Medicine & Biology
Poster 148
I: : : : : : : :. (
'.:
:0.8
.........
...........................
6
Id (mA)
".L
II
1.6
1.4 ............ ..................... ...... .............................
-1.2
......................
,
. .........................
-.
0.8 ................................
o0.6
..................
0.4
.................
. .............,...............
IRb= 0. lb, 5O,l00~200,500.~lk
and 2d Ohms
0
"
,
Id ( m A r
'
...
'"
0.2
................
0.5
0.6
0.4
0.3
UI
0.1
500
1000
1500
Rb (Ohm)
2000
(a)
(b)
(C)
Fig. 3. The effect of base resistance (Rb)on diode-connected NPN substrate leakage current. (a) Substrate leakage current when Rb is changed from 0 to
2kR. (b) Diode-connected NPN voltage drop (c) Comparison between the desirable substrate leakage current reduction and undesirable diode voltage drop
increase by increasing Rb when diode current is fixed at 10mA.
2"" Annual International IEEE-EMBS Special Topic Conference on Microtechnologies in Medicine & Biology
May 2 4 2 0 0 2 , Madison, Wisconsin USA - 0-7803-7480-0/02/$17.0002002 IEEE.
415
Poster 1 4 8
D
Fig. 4. Conventional BJT bridge rectifiers with different topology, size, breakdown voltage, and current handling capabilities on a rectifier test stmcture.
Coil2
12
10
z8
E6
-4
v
vout
0
0.1
Mn2
v + n
1
freq (MHz)
416
10
2"6Annual Intemational IEEE-EMBS Special Topic Conference on Microtechnologies in Medicine & Biology
May 2 4 2 0 0 2 , Madison, WisconsinUSA - 0-7803-7480-0/02/$17.00 02002 IEEE.
Poster 148
vout
..... .
(c)
Fig. 7. (a) Schematic diagram of the CMOS full-wave rectifier implemented
in an N-Epi BiCMOS process (b) Cross section of half of the symmetrical
structure showing the NMOS and diode-connected PMOS complexes and
parasitic BJTs. (c) Prototype rectifier fabricated in the UofM 3pm
BiCMOS process. Size: 0.5x0.73mm
v. DUAL-OUTPUT
POWER SUPPLY
The rectifiers discussed in previous sections were
employed in design of an integrated dual-output power
supply. Fig. 9 shows a simplified schematic diagram of the
voltage regulator block. It generates 5V/l OV outputs and is
able to supply over lOmA from its 1OV output. A VBE
referenced current source (Iref) is mirrored to bias two 5.4V
Zener diodes, which generate 5.4V and 12.2V reference
2&Annual International IEEE-EMBS Special Topic Conference on Microtechnologies in Medicine & Biology
May 24,2002, Madison, Wisconsin USA - 0-7803-7480-0/02/$17.00 02002 IEEE.
417
Poster 148
11 314
(%T2,
11 338
MI
9 3 . Q4
: 11
5v~7+&,j;;
M3
M5
M6
@)
(a)
'
11'
(2)
= b n c o . r (wn Ln )('Cis - 'ThN - ' B E ( 0 N )
It can be shown [14] that the small signal output resistance
of the PMOS-NPN compound is
(3)
Ro =''gmp(l+gmn(R, II yn))=l'gmp',e
Fig. 9. Simplified schematic diagram of the dual-output voltage regulator
block.
418
2"dAnnual International IEEE-EMBS Special Topic Conference on Microtechnologies in Medicine & Biology
May 24,2002, Madison, Wisconsin USA - 0-7803-7480-0/02/$17.00 0 2 0 0 2 IEEE.
Poster 148
TABLE 1
SPECIFICATIONS OF VARIOUS RECTIFIER DESIGNS
V. CONCLUSION
REFERENCES
[IO]
[ll]
[I21
>
[ 131
0.01
0.1
10
100
R+RFig.12: The dual-output power supply load balance curve. Setting both
loads at IKR and increasing them one at a time.
[I41
2Annual International IEEE-EMBS Special Topic Conference on Microtechnologies in Medicine & Biology
May 24,2002, Madison, Wisconsin USA - 0-7803-7480-0/02/$17.00 02002 IEEE.
419