IXGN 200N60A2

IGBT
Optimized for Switching
up to 5 kHz
Preliminary Data Sheet
Symbol

= 600 V
= 200 A
= 1.35 V

Test Conditions

Maximum Ratings

VCES

TJ = 25C to 150C

600

VCGR

TJ = 25C to 150C; RGE = 1 M

600

VGES

Continuous

20

Transient

30

IC25

TC = 25C

200

IC110

TC = 110C

100

ICM

TC = 25C, 1 ms

400

SSOA
(RBSOA)

VGE = 15 V, TVJ = 125C, RG = 2.0

Clamped inductive load

ICM = 200
@ 0.8 VCES

PC

TC = 25C

700

-55 ... +150

TJM

150

Tstg

-55 ... +150

2500
3000

V~
V~

TJ

VISOL

50/60 Hz
IISOL 1 mA

t = 1 min
t=1s

Md

Mounting torque
Terminal connection torque (M4)

1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.

Weight

30

Symbol

Test Conditions

VGE(th)

IC

ICES

VCE = VCES
VGE = 0 V

IGES

VCE = 0 V, VGE = 20 V

VCE(sat)

IC

= IC110, VGE = 15 V

Characteristic Values
(TJ = 25C, unless otherwise specified)
min. typ. max.

= 1 mA, VCE = VGE

2.5
TJ = 25C
TJ = 125C

1.2

SOT-227B, miniBLOC
Ec

VGEM

2003 IXYS All rights reserved

VCES
IC25
VCE(sat)

5.5

50
2

A
mA

400

nA

1.35

Ec
C
G = Gate, C = Collector, E = Emitter
c either emitter terminal can be used as
Main or Kelvin Emitter

Features
z
International standard package
miniBLOC
z
Aluminium nitride isolation
- high power dissipation
z
Isolation voltage 3000 V~
z
Very high current IGBT
z
Low VCE(sat) for minimum on-state
conduction losses
z
MOS Gate turn-on
- drive simplicity
z
Low collector-to-case capacitance
(< 50 pF)
z
Low package inductance (< 5 nH)
- easy to drive and to protect
Applications
z
AC motor speed control
z
DC servo and robot drives
z
DC choppers
z
Uninterruptible power supplies (UPS)
z
Switch-mode and resonant-mode
power supplies
Advantages
z
Easy to mount with 2 screws
z
Space savings
z
High power density

DS99087A(11/03)

IXGN 200N60A2
Symbol

Test Conditions

gfs

IC

Characteristic Values
(TJ = 25C, unless otherwise specified)
min. typ.
max.

= 60 A; VCE = 10 V,

70

106

9900

pF

740

pF

190

pF

480

nC

63

nC

169

nC

60

ns

45

ns

360

ns

250

ns

Eoff

mJ

td(on)

60

ns

tri

60

ns

3.0

mJ

290

ns

SOT-227B miniBLOC

Pulse test, t 300 s, duty cycle 2 %

Cies
Coes

VCE = 25 V, VGE = 0 V, f = 1 MHz

Cres
Qg
Qge

IC = IC110, VGE = 15 V, VCE = 0.5 VCES

Qgc
td(on)
tri

Inductive load, TJ = 25C

td(off)

IC = IC110, VGE = 15 V
VCE = 0.8 VCES, RG = Roff = 2.0

tfi

Eon
td(off)
tfi

Inductive load, TJ = 125C

IC = IC110, VGE = 15 V
VCE = 0.8 VCES, RG = Roff = 2.4

Eoff

660

ns

12

mJ
0.17 K/W

RthJC
0.05

RthCK

K/W

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:

4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343

IXGN 200N60A2
Fig. 1. Output Characte ristics
@ 25 Deg. C

Fig. 2. Extended Output Characte ristics

@ 25 de g. C
350

200
VGE = 15V
13V
11V

175

300

150
125
100
75

200
7V
150
100

50
25

50

5V

5V

0.25

0.5

0.75

1.25

1.5

1.75

2.25

0.5

V C E - Volts
Fig. 3. Output Characteristics
@ 125 Deg. C

2.5

V C E - Volts

3.5

1.4
VGE = 15V
13V
11V
9V

150

1.3
7V

V C E (sat)- Normalized

175

I C - Amperes

1.5

Fig. 4. De pende nce of V CE(sat) on

Tem perature

200

125
100
75
50

5V

1.1
1.0

0.8

0.6
0.75

1.25

1.5

1.75

I C = 100A

0.9

0.7

0.5

I C = 200A

V GE = 15V

1.2

25

0.25

2.25

I C = 50A
-50

-25

V CE - Volts

25

50

75

100

125

150

7.5

TJ - Degrees Centigrade

Fig. 5. Collector-to-Em itter Voltage

vs. Gate-to-Em iiter Voltage

Fig. 6. Input Adm ittance

3.0

350
TJ = 25C

2.8

300

2.6

2.2
2.0
1.8
I C = 200A

1.6
1.4

100A

1.2

I C - Amperes

250

2.4

VC E - Volts

9V

250

7V

I C - Amperes

I C - Amperes

VGE = 15V
13V
11V

9V

200
150
TJ = 125C
25C
-40C

100
50

50A

1.0

0
5

10 11 12

V G E - Volts
2003 IXYS All rights reserved

13 14 15 16 17

4.5

5.5

6.5

V G E - Volts

IXGN 200N60A2
Fig. 7. Transconductance

Fig. 8. Dependence of Eoff on RG

200

35

180

30
TJ = -40C
25C
125C

140

E off - milliJoules

g f s - Siemens

160

120
100
80
60

I C = 200A

25

TJ = 125C
VGE = 15V
VCE = 480V

20
15

I C = 100A

10

40
5

20
0

I C = 50A

0
0

50

100

150

200

250

300

350

10

I C - Amperes

20

25

Fig. 10. Dependence of Eoff on

Tem perature

Fig. 9. Dependence of Eoff on Ic

30

30
R G = 2.4
VGE = 15V
VCE = 480V

R G = 2.4
VGE = 15V
VCE = 480V

25

E off - milliJoules

25

E off - MilliJoules

15

R G - Ohms

20
TJ = 125C
15
10

I C = 200A

20

15
I C = 100A
10

TJ = 25C
5

I C = 50A
50

75

100

125

150

175

200

25

35

45

I C - Amperes

65

75

85

95

105 115 125

Fig. 12. Capacitance

Fig. 11. Gate Charge

100000

15

f = 1 MHz

Capacitance - p F

VCE = 300V
I C = 100A
I G = 10mA

12

VG E - Volts

55

TJ - Degrees Centigrade

C ies

10000

1000

C oes

3
C res
0

100
0

50

100 150 200 250 300 350 400 450 500

Q G - nanoCoulombs

10

15

20

25

V C E - Volts

30

35

IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:

4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665
6,534,343

40

IXGN 200N60A2

Fig. 1 3 . M a x im um Tra ns ie nt The r m a l Re s is ta nc e

0 . 18
0 . 16

R (th) J C - (C/W)

0 . 14
0 . 12
0. 1
0 . 08
0 . 06
0 . 04
0 . 02
0
1

2003 IXYS All rights reserved

10

Puls e W idth - millis ec onds

10 0

10 0 0