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Code No: 2320403 Set No. 1

III B.Tech II Semester Regular Examinations, April/May 2009
MICROWAVE ENGINEERING
( Common to Electronics � Communication Engineering and Electronics �
Telematics)
www.andhracolleges.com
Time: 3 hours Max Marks: 80
Answer any FIVE Questions
All Questions carry equal marks
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1. (a) Derive the wave equation for a TM wave and obtain all the field components
in a rectangular wave guide.
(b) A rectangular wave guide with dimension of 3 � 2 cm operates in the TM��
mode at 10 GHz. Determine the characteristic wave impedance. [8+8]
2. (a) Draw the field configurations of TM�� , TM2� , TE�� and TE2� in circular wave
guides.
(b) An air filled circular wave guide has a radious of 1.5 cm and is to carry energy
at a frequency of 10 GHz. Find all TE and TM modes for which transmission
is possible. [8+8]
3. (a) Write short notes on “H-Plane Tee”.

(b) Ten watts is applied to the input of a coupler whose output end is terminated
in a matched load. The auxiliary output is found to be 100 milli watts. When
10 watts is applied to the output end of the coupler and the input is terminated
in a matched load, the auxiliary output is found to be 10 micro watts. Find
both the coupling and directivity. [8+8]
4. (a) Explain the principle of operation of an isolator? What is the significance of

using isolator in microwave circuits.
(b) Why are S - parameters used at microwave frequencies explain. Give the
properties of S -parameters. [8+8]
5. (a) Find the optimum length for 1 43 mode of a repeller space of reflex klystron
which operates with centre freq. 9GHZ with dc beam voltage 600V & repeller
voltage V� = 250V &n = 1�76 � 10�� Coul/kg.
(b) Describe the phenomenon of velocity modulation in two-cavity klystron &
hence explain how microwave power is amplified by the interaction of velocity
modulated beam with electromagnetic filed in the two cavity klystron. [8+8]
6. (a) What is the purpose of strapping in magnetron . What are the Dis advantages
of strapping under certain conditions.Give the Crosssection of a magnetron
anode cavity system that does not require strapping.
(b) With the aid of cross section sketh of coaxial magnetron ,explain the operation
of this device. [8+8]
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7. (a) Prove that maximum power that can be given to mobile carriers decreases as
1/f2 in IMPATT diode.
(b) An IMPATT diode has following parameters
Carrier drift velocity Vd = 2 � 107 cm/s
Drift region length L = 6 µm
Maximum operating voltage Vomax = 100 v
Maximum operating current Io max = 200 mA
Efficiency η = 15�
Breakdown voltage Vbd = 90v
Compute
i. Maximum CW output power in watts
ii. Resonant frequency in GHz. [8+8]
8. (a) Explain the mesuring impedence of a given load with suitable diagram.
(b) A 25dB isolater is added in series at the output of a signal generator to reduce
the possibility of frenquency pulling due to an affected system VSWR mis-
match of 1.25/1. If the generator power output is 234mw, what is the value
of the reflected signal received at the generator. [8+8]
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Telematics)
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(b) A rectangular wave guide with dimension of 3 � 2 cm operates in the TM11
2. (a) Write short notes on “parallel strip lines”.

(b) Explain about ohmic losses and radiation losses in a micro strip line. [8+8]
3. (a) Write short notes on “H-Plane Tee”.

(b) Ten watts is applied to the input of a coupler whose output end is terminated
in a matched load. The auxiliary output is found to be 100 milli watts. When
10 watts is applied to the output end of the coupler and the input is terminated
in a matched load, the auxiliary output is found to be 10 micro watts. Find
both the coupling and directivity. [8+8]
4. (a) Discuss propagation of microwave energy in ferrites.
(b) A matched isolator has insertion loss of 0.5 dB and isolation of 25 dB. Find
the scattering coefficients. [8+8]
5. (a) List � explain the applications � limitations of Reflex klystron � two cavity
klystron.
(b) Explain the operation of reflex klystron oscillator.Why is the transit time so
important in this device. [8+8]
6. (a) A X-band pulsed cylindrical magnetron has Vo =3KV, Io = 80A, Bo = 0.01

wb/m2 , a=4CM, b=8CM.Calculate Cyclotron Angular frequency, cut off Volt-
age ,cut off magnetic flux density.
(b) Give the necessary theory � explain the mechanism of oscillations in multi
cavity magnetron. [8+8]
7. (a) Derive the equation for power output � efficiency of IMPATT diode.
(b) Determine the conductivity of n-type Ga As Gunn diode if
Electron density n = 1018 cm�3
Electron density at lower valley n� = 101� cm�3
Electron density at upper valley nu = 108 cm�3
Temperature T = 300o K. [8+8]
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8. (a) The cablibrated power from a generator as read at the power meter is 25mw.
When a 3dB attenuator with a VSWR of 1.3/1 is inserted between the gener-
ator and detector what value should the power meter read.
(b) Compare the power ratio and RF substitution methods of measuring attenu-
ation provided by the microwave component. [8+8]
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Telematics)
��
(b) A rectangular wave guide with dimension of 3 × 2 cm operates in the TM��
2. (a) Draw the field configurations of TM�� , TM2� , TE�� and TE2� in circular wave
guides.
(b) An air filled circular wave guide has a radious of 1.5 cm and is to carry energy
at a frequency of 10 GHz. Find all TE and TM modes for which transmission
is possible. [8+8]
3. (a) Sketch a 4 port hybrid junction and justify that it is a basically a 3 dB direc-
tional coupler.
(b) A matched generator with a power of one watt is connected to the H arm
of magic tee C (port 4). The E arm (port 3) is match terminated and the
length of the coplanar arms is the same. Compute the power delivered to the
termination at port 1, 2 and 3 and the power reflected at port 4 when ports 1
and 2 are match terminated. [8+8]
4. (a) What are scattering parameters and S-matrix? Explain.

(b) Write the scattering matrix for the following wave guide components.
i. 3 port ideal circulator
ii. Magic tee. [8+8]
5. (a) The beam voltage V� =250, beam current,I� =15mA , the sign voltage Vm =35v,
are the parameters of a reflex klystron which operate ate the mode n=2. Find
the input power � efficiency.
(b) Derive the expressions used in the above problem. [8+8]
6. (a) Derive the expression for power gain in dB for TWT.

(b) A TWT has following characteristics:
Beam Voltage Vo 2KV, Beam current Io= 4mA, characteristic Impedance
Zo = 20 Ω ,circuit length, N=50 � frequency f =8 GHz. Find the
i. gain parameter C
ii. power gain in db. [8+8]
1 of 2

7. (a) Derive the criterion for classifying the modes of operation for Gunn effect
diodes
(b) An n-type GaAs Gunn diode has following parameters
Electron drift velocity Vd = 2.5 × 105 m/s
Negative Electron mobility �μn � = 0.015 m2 / v s
Relative dielectric constant εr = 13.1
Determine the criterion for classifying the modes of operation. [8+8]
8. (a) What type of precations are needed while doing microwave mesurements?
(b) Explain the method of microwave power measurement using Bolometer.[8+8]
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Telematics)
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1. (a) Find the expressions for electric surface current density on the walls of a
rectangular wave guide for a TE1� mode.
(b) The electric field intensity of the dominant TE1� mode in a lossless rectangular
wave guide is
i. Find the magnetic field intensity H.
ii. Calculate the cut off frequency and the time averaged transmitted power.
[8+8]
2. (a) Why is a micro strip line referred to as an “open strip line”?

(b) Does micro strip line support TEM modes? Justify the answer.
(c) What are the disadvantages of using micro strip lines? [5+5+6]
3. (a) Explain the principle of working of a precision rotary phase shifter with a neat
sketch.
(b) Establish the properties of a series type wave guide Tee junction. [8+8]
4. (a) What is the necessity of S-matrix representation of microwave component?

(b) Derive the S-matrix of directional coupler in standard form. [8+8]
5. (a) Explain the gain Bandwidth product limitation � Transit angle effects in
conventional tubes at microwave frequencies.
(b) A reflex klystron operates under the following conditions
V� = 900v� L = 1mm
Rsh = 25k − 2� m� = 1.759 � 1011 � fr = 9GHZ
The tube is oscillating at fr at the peak of n =2 mode or 1 34 mode.
Assume that the transit time through the gap � beam loading can be ne-
glected.
i. Find the value of repeller voltage Vr .
ii. Find the D.C. current necessary to give a microwave gap voltage of 100v.
iii. What is the electronic efficiency under this condition. [8+8]
6. (a) Derive the expression for power gain in dB for TWT.

(b) A TWT has following characteristics:
Beam Voltage Vo 2KV, Beam current Io= 4mA, characteristic Impedance
Zo = 20 Ω ,circuit length, N=50 � frequency f =8 GHz. Find the
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i. gain parameter C
ii. power gain in db. [8+8]
7. (a) Am IMPATT diode has drift length of 2 µm. Determine
i. Drift time of the carriers
ii. Operating frequency of IMPATT diode.
(b) Compare IMPATT and TRAPATT diodes. [8+8]
8. (a) The cablibrated power from a generator as read at the power meter is 25mw.
When a 3dB attenuator with a VSWR of 1.3/1 is inserted between the gener-
ator and detector what value should the power meter read.
(b) Compare the power ratio and RF substitution methods of measuring attenu-
ation provided by the microwave component. [8+8]
��
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com The Complete Information About Colleges in Andhra Pradesh

Code No: 2320403 Set No. 1

3. (a) Write short notes on “H-Plane Tee”.

4. (a) Explain the principle of operation of an isolator? What is the signiﬁcance of

Seminar Topics - Scholarships - Admission/Entrance Exam Notifications

Code No: 2320403 Set No. 1

Code No: 2320403 Set No. 2

2. (a) Write short notes on “parallel strip lines”.

3. (a) Write short notes on “H-Plane Tee”.

6. (a) A X-band pulsed cylindrical magnetron has Vo =3KV, Io = 80A, Bo = 0.01

Code No: 2320403 Set No. 2

Code No: 2320403 Set No. 3

4. (a) What are scattering parameters and S-matrix? Explain.

6. (a) Derive the expression for power gain in dB for TWT.

Code No: 2320403 Set No. 3

Code No: 2320403 Set No. 4

2. (a) Why is a micro strip line referred to as an “open strip line”?

4. (a) What is the necessity of S-matrix representation of microwave component?

6. (a) Derive the expression for power gain in dB for TWT.

Code No: 2320403 Set No. 4

7. (a) Am IMPATT diode has drift length of 2 µm. Determine

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