FSB649

FSB649

C
E
B

SuperSOTTM-3

NPN Low Saturation Transistor

These devices are designed with high current gain and low saturation voltage with collector currents up to 3A
continuous. Sourced from Process NC.

Absolute Maximum Ratings*

Symbol

TA = 25C unless otherwise noted

Parameter

FSB649

Units

VCEO

Collector-Emitter Voltage

25

VCBO

Collector-Base Voltage

35

VEBO

Emitter-Base Voltage

IC

Collector Current - Continuous

TJ, Tstg

Operating and Storage Junction Temperature Range

-55 to +150

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

TA = 25C unless otherwise noted

Max
Characteristic

Symbol

Units
FSB649

PD

Total Device Dissipation

500

mW

RJA

Thermal Resistance, Junction to Ambient

250

C/W

1999 Fairchild Semiconductor Corporation

fsb649.lwpPrNC revA

(continued)

Electrical Characteristics
Symbol

TA = 25C unless otherwise noted

Parameter

Test Conditions

Min

Max

Units

OFF CHARACTERISTICS
BVCEO

Collector-Emitter Breakdown Voltage

IC = 10 mA

25

BVCBO

Collector-Base Breakdown Voltage

IC = 100 A

35

BVEBO

Emitter-Base Breakdown Voltage

IE = 100 A

ICBO

Collector Cutoff Current

VCB = 30 V

100

VCB = 30 V, TA=100C

10

nA
uA

VEB = 4V

100

nA

IEBO

Emitter Cutoff Current

ON CHARACTERISTICS*
hFE

VCE(sat)

DC Current Gain

Collector-Emitter Saturation Voltage

IC = 50 mA, VCE = 2 V

70

IC = 1 A, VCE = 2 V

100

IC = 2 A, VCE = 2 V

75

IC = 6 A, VCE = 2 V

15

300

IC = 1 A, IB = 100 mA

300

mV

IC = 3 A, IB = 300 mA

600
1.25

VBE(sat)

Base-Emitter Saturation Voltage

IC = 1 A, IB = 100 mA

VBE(on)

Base-Emitter On Voltage

IC = 1 A, VCE = 2 V

50

pF

SMALL SIGNAL CHARACTERISTICS

Cobo

Output Capacitance

VCB = 10 V, IE = 0, f = 1MHz

fT

Transition Frequency

IC = 100 mA,VCE = 5 V, f=100MHz

150

*Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%

1999 Fairchild Semiconductor Corporation

fsb649.lwpPrNC revA

FSB649

NPN Low Saturation Transistor

TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ACEx
Bottomless
CoolFET
CROSSVOLT
DenseTrench
DOME
EcoSPARK
E2CMOSTM
EnSignaTM
FACT
FACT Quiet Series

FAST
FASTr
FRFET
GlobalOptoisolator
GTO
HiSeC
ISOPLANAR
LittleFET
MicroFET
MICROWIRE
OPTOLOGIC

OPTOPLANAR
PACMAN
POP
Power247
PowerTrench
QFET
QS
QT Optoelectronics
Quiet Series
SILENT SWITCHER
SMART START

STAR*POWER
Stealth
SuperSOT-3
SuperSOT-6
SuperSOT-8
SyncFET
TinyLogic
TruTranslation
UHC
UltraFET
VCX

STAR*POWER is used under license

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
2. A critical component is any component of a life
1. Life support devices or systems are devices or
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification

Product Status

Definition

Advance Information

Formative or
In Design

This datasheet contains the design specifications for

product development. Specifications may change in
any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. H3