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PD - 95177

IRF7303PbF

Generation V Technology
l Ultra Low On-Resistance
l Dual N-Channel Mosfet
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching
l Lead-Free
Description

HEXFET Power MOSFET

S1

D1

G1

D1

S2

D2

G2

D2

VDSS = 30V
RDS(on) = 0.050

Top View

Fifth Generation HEXFETs from International Rectifier


utilize advanced processing techniques to achieve
the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed
and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements,
multiple devices can be used in an application with
dramatically reduced board space. The package is
designed for vapor phase, infra red, or wave soldering
techniques. Power dissipation of greater than 0.8W
is possible in a typical PCB mount application.

SO-8

Absolute Maximum Ratings


Parameter
ID @ TA = 25C
ID @ TA = 25C
ID @ TA = 70C
IDM
PD @TA = 25C
V GS
dv/dt
TJ, TSTG

10 Sec. Pulsed Drain Current, VGS @ 10V


Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range

Max.

Units

5.3
4.9
3.9
20
2.0
0.016
20
5.0
-55 to + 150

A
W
W/C
V
V/ns
C

Thermal Resistance Ratings


Parameter
RJA

Maximum Junction-to-Ambient

Typ.

Max.

Units

62.5

C/W
10/6/04

IRF7303PbF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient

Qg
Q gs
Qgd
td(on)
tr
td(off)
tf

Gate-to-Source Forward Leakage


Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time

Min.
30

1.0
5.2

Typ.

0.032

6.8
21
22
7.7

LD

Internal Drain Inductance

4.0

LS

Internal Source Inductance

6.0

Ciss
Coss
Crss

Input Capacitance
Output Capacitance
Reverse Transfer Capacitance

520
180
72

V(BR)DSS
RDS(ON)

Static Drain-to-Source On-Resistance

VGS(th)
g fs

Gate Threshold Voltage


Forward Transconductance

IDSS

Drain-to-Source Leakage Current

IGSS

Max. Units
Conditions

V
VGS = 0V, ID = 250A
V/C Reference to 25C, ID = 1mA
0.050
VGS = 10V, ID = 2.4A

0.080
VGS = 4.5V, ID = 2.0A

V
VDS = VGS, ID = 250A

S
VDS = 15V, ID = 2.4A
1.0
VDS = 24V, VGS = 0V
A
25
VDS = 24V, V GS = 0V, TJ = 125 C
100
VGS = 20V
nA
-100
VGS = - 20V
25
ID = 2.4A
2.9
nC VDS = 24V
7.9
VGS = 10V, See Fig. 6 and 12

VDD = 15V

ID = 2.4A
ns

RG = 6.0

RD = 6.2, See Fig. 10


D

nH

Between lead tip


and center of die contact

pF

VGS = 0V
VDS = 25V
= 1.0MHz, See Fig. 5

G
S

Source-Drain Ratings and Characteristics


IS
I SM

V SD
t rr
Q rr
ton

Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time

Min. Typ. Max. Units

Conditions
D
MOSFET symbol
2.5
showing the
A
G
integral reverse
20
p-n junction diode.
S
1.0
V
TJ = 25C, IS = 1.8A, V GS = 0V
47
71
ns
TJ = 25C, IF = 2.4A
56
84
nC di/dt = 100A/s
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

Repetitive rating; pulse width limited by

Pulse width 300s; duty cycle 2%.

ISD 2.4A, di/dt 73A/s, VDD V(BR)DSS,

Surface mounted on FR-4 board, t 10sec.

max. junction temperature. ( See fig. 11 )

TJ 150C

IRF7303PbF
1000

1000

VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V

100

4.5V
10

20s PULSE WIDTH


TJ = 25C

1
0.1

VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP

I , Drain-to-Source Current (A)


D

I , Drain-to-Source Current (A)


D

TOP

10

100

4.5V
10

20s PULSE WIDTH


TJ = 150C

1
0.1

100

VDS , Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

100

R DS(on) , Drain-to-Source On Resistance


(Normalized)

I D , Drain-to-Source Current (A)

2.0

TJ = 25C
TJ = 150C

V DS = 15V
20s PULSE WIDTH
4

VGS , Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

100

VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

10

10

10

I D = 4.0A

1.5

1.0

0.5

VGS = 10V

0.0
-60

-40

-20

20

40

60

80

100 120 140 160

TJ , Junction Temperature (C)

Fig 4. Normalized On-Resistance


Vs. Temperature

IRF7303PbF
1000

V GS , Gate-to-Source Voltage (V)

800

C, Capacitance (pF)

20

V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
C oss = C ds + C gd

I D = 2.4A
VDS = 24V

16

Ciss
600

12

Coss
400

Crss

200

0
1

10

100

FOR TEST CIRCUIT


SEE FIGURE 12

0
0

VDS , Drain-to-Source Voltage (V)

15

20

25

Q G , Total Gate Charge (nC)

Fig 5. Typical Capacitance Vs.


Drain-to-Source Voltage

Fig 6. Typical Gate Charge Vs.


Gate-to-Source Voltage

100

100

OPERATION IN THIS AREA LIMITED


BY RDS(on)

ID , Drain Current (A)

ISD , Reverse Drain Current (A)

10

10

TJ = 150C

TJ = 25C

VGS = 0V

0.1
0.0

0.5

1.0

1.5

2.0

VSD , Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode


Forward Voltage

2.5

100us
10

1ms

TA = 25 C
TJ = 150 C
Single Pulse

1
0.1

10ms
1

10

VDS , Drain-to-Source Voltage (V)

Fig 8. Maximum Safe Operating Area

100

IRF7303PbF
5.0

V DS
VGS

ID , Drain Current (A)

4.0

D.U.T.

RG
3.0

RD

- VDD

10V
Pulse Width 1 s
Duty Factor 0.1 %

2.0

Fig 10a. Switching Time Test Circuit


1.0

VDS
90%

0.0

25

50

75

100

125

150

TC , Case Temperature ( C)
10%
VGS

Fig 9. Maximum Drain Current Vs.


Ambient Temperature

td(on)

tr

t d(off)

tf

Fig 10b. Switching Time Waveforms

Thermal Response (Z thJA )

100

D = 0.50
0.20
10

0.10
0.05
0.02

PDM

0.01

t1

SINGLE PULSE
(THERMAL RESPONSE)

0.1
0.0001

t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA

0.001

0.01

0.1

10

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

100

IRF7303PbF
Current Regulator
Same Type as D.U.T.

QG

10V
QGS

50K
.2F

12V

.3F

QGD

VG

D.U.T.

+
V
- DS

VGS
3mA

Charge

IG

ID

Current Sampling Resistors

Fig 12a. Basic Gate Charge Waveform

Fig 12b. Gate Charge Test Circuit

IRF7303PbF
Peak Diode Recovery dv/dt Test Circuit
+

D.U.T

Circuit Layout Considerations


Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer

RG

Driver Gate Drive


P.W.

dv/dt controlled by R G
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test

Period

D=

VDD

P.W.
Period
VGS=10V

D.U.T. ISD Waveform


Reverse
Recovery
Current

Body Diode Forward


Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt

Re-Applied
Voltage

Body Diode

VDD

Forward Drop

Inductor Curent
Ripple 5%

* VGS = 5V for Logic Level Devices


Fig 13. For N-Channel HEXFETS

ISD

IRF7303PbF
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
D

DIM

B
5

E
1

6X

0.25 [.010]

e1

8X b
0.25 [.010]

MILLIMET ERS

MAX

MIN

.0532

.0688

1.35

1.75

A1 .0040

.0098

0.10

0.25

.013

.020

0.33

0.51

.0075

.0098

0.19

0.25

.189

.1968

4.80

5.00

.1497

.1574

3.80

4.00

.050 BASIC

1.27 BASIC

e1

.025 BASIC

0.635 BAS IC

.2284

.2440

5.80

6.20

.0099

.0196

0.25

0.50

.016

.050

0.40

1.27

INCHES
MIN

MAX

K x 45
C

y
0.10 [.004]

A1

8X L

8X c

C A B

FOOT PRINT

NOT ES :
1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994.

8X 0.72 [.028]

2. CONT ROLLING DIMENS ION: MILLIMETER


3. DIMENS IONS ARE SHOWN IN MILLIMET ERS [INCHES ].
4. OUT LINE CONFORMS T O JEDEC OUT LINE MS-012AA.
5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROT RUSIONS NOT T O EXCEED 0.15 [.006].
6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS .
MOLD PROT RUSIONS NOT T O EXCEED 0.25 [.010].

6.46 [.255]

7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING T O


A S UBS T RAT E.
3X 1.27 [.050]

8X 1.78 [.070]

SO-8 Part Marking Information (Lead-Free)


EXAMPLE: T HIS IS AN IRF7101 (MOSFET )

INTERNAT IONAL
RECT IFIER
LOGO

XXXX
F7101

DAT E CODE (YWW)


P = DESIGNAT ES LEAD-FREE
PRODUCT (OPT IONAL)
Y = LAST DIGIT OF T HE YEAR
WW = WEEK
A = ASS EMBLY SIT E CODE
LOT CODE
PART NUMBER

IRF7303PbF

SO-8 Tape and Reel


Dimensions are shown in milimeters (inches)
TERMINAL NUMBER 1

12.3 ( .484 )
11.7 ( .461 )

8.1 ( .318 )
7.9 ( .312 )

FEED DIRECTION

NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

330.00
(12.992)
MAX.

14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

Data and specifications subject to change without notice.


This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IRs Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.10/04

Mouser Electronics
Authorized Distributor

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International Rectifier:
IRF7303PBF IRF7303TRPBF

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