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Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
100
RDS(on) ()
VGS = 10 V
Qg max. (nC)
0.54
8.3
Qgs (nC)
2.3
Qgd (nC)
3.8
Configuration
Single
D
Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
TO-220AB
DESCRIPTION
G
S
N-Channel MOSFET
TO-220AB
IRF510PbF
Lead (Pb)-free
SiHF510-E3
IRF510
SnPb
SiHF510
SYMBOL
LIMIT
Drain-Source Voltage
VDS
100
Gate-Source Voltage
VGS
20
VGS at 10 V
TC = 25 C
TC = 100 C
ID
IDM
UNIT
V
5.6
4.0
20
0.29
W/C
EAS
75
mJ
IAR
5.6
EAR
4.3
mJ
PD
43
dV/dt
5.5
V/ns
TJ, Tstg
-55 to +175
Repetitive Avalanche
Energy a
TC = 25 C
for 10 s
6-32 or M3 screw
300
10
lbf in
1.1
Nm
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 C, L = 4.8 mH, Rg = 25 , IAS = 5.6 A (see fig. 12).
c. ISD 5.6 A, dI/dt 75 A/s, VDD VDS, TJ 175 C.
d. 1.6 mm from case.
S15-2693-Rev. C, 16-Nov-15
IRF510, SiHF510
www.vishay.com
Vishay Siliconix
SYMBOL
TYP.
MAX.
Maximum Junction-to-Ambient
RthJA
62
RthCS
0.50
RthJC
3.5
UNIT
C/W
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS
VGS = 0 V, ID = 250 A
100
VDS/TJ
Reference to 25 C, ID = 1 mA
0.12
V/C
VGS(th)
2.0
4.0
Gate-Source Leakage
IGSS
VGS = 20 V
100
nA
25
IDSS
250
0.54
1.3
180
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
RDS(on)
gfs
ID =3.4 A b
VGS = 10 V
VDS = 50 V, ID = 3.4
Ab
Dynamic
Input Capacitance
Ciss
VGS = 0 V,
Output Capacitance
Coss
VDS = 25 V,
81
Crss
15
Qg
ID = 5.6 A, VDS = 80 V
8.3
Gate-Source Charge
Qgs
VDS = 10 V,
2.3
Gate-Drain Charge
Qgd
td(on)
Rise Time
Turn-Off Delay Time
Fall Time
tr
td(off)
VGS = 10 V
VDD = 50 V, ID = 5.6 A
Rg = 24 , RD = 8.4, see fig. 10 b
tf
LD
LS
Between lead,
6 mm (0.25") from
package and center of
die contact
pF
nC
3.8
6.9
16
15
9.4
4.5
7.5
5.6
20
2.5
100
200
ns
0.44
0.88
ns
nH
IS
ISM
VSD
trr
Qrr
ton
MOSFET symbol
showing the
integral reverse
p - n junction diode
TJ = 25 C, IS = 5.6 A, VGS = 0 V b
TJ = 25 C, IF = 5.6 A, dI/dt = 100 A/s b
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 s; duty cycle 2 %.
S15-2693-Rev. C, 16-Nov-15
IRF510, SiHF510
www.vishay.com
Vishay Siliconix
VGS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
Top
100
4.5 V
20 s pulse width
TC = 25 C
10-1
100
101
91015_01
ID = 5.6 A
VGS = 10 V
2.5
2.0
1.5
1.0
0.5
0.0
- 60 - 40 - 20 0
400
VGS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
101
3.0
91015_04
VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds shorted
Crss = Cgd
Coss = Cds + Cgd
Top
100
320
4.5 V
Capacitance (pF)
101
240
Ciss
160
Coss
80
Crss
20 s pulse width
TC = 175 C
100
10-1
100
91015_02
25 C
20
101
175 C
100
20 s pulse width
VDS = 50 V
10-1
4
S15-2693-Rev. C, 16-Nov-15
101
91015_05
91015_03
101
ID = 5.6 A
VDS = 80 V
16
VDS = 50 V
VDS = 20 V
12
4
For test circuit
see figure 13
10
0
91015_06
10
IRF510, SiHF510
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Vishay Siliconix
175 C
100
5.0
6.0
25 C
4.0
3.0
2.0
1.0
10-1
VGS = 0 V
0.5
0.6
0.7
0.8
0.9
1.0
1.1
0.0
1.2
25
91015_07
50
125
150
RD
VDS
VGS
D.U.T.
RG
10
175
102
5
100
91015_09
75
+
- VDD
100 s
10 V
1 ms
Pulse width 1 s
Duty factor 0.1 %
10 ms
TC = 25 C
TJ = 175 C
single pulse
0.1
10
VDS
102
90 %
103
91015_08
10 %
VGS
td(on)
td(off) tf
tr
10
0 - 0.5
1
0.2
0.1
0.1
0.05
0.02
0.01
PDM
t1
Single pulse
(thermal response)
t2
Notes:
1. Duty factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC
10-2
10-5
91015_11
10-4
10-3
10-2
0.1
10
S15-2693-Rev. C, 16-Nov-15
IRF510, SiHF510
www.vishay.com
Vishay Siliconix
L
Vary tp to obtain
required IAS
VDS
QG
10 V
D.U.T
RG
+
-
IAS
QGS
VG
10 V
0.01
tp
QGD
V DD
Charge
Fig. 12a - Unclamped Inductive Test Circuit
VDS
50 k
tp
12 V
0.2 F
VDD
0.3 F
D.U.T.
VDS
VDS
VGS
3 mA
IAS
IG
ID
Current sampling resistors
300
ID
2.3 A
4.0 A
Bottom 5.6 A
Top
250
200
150
100
50
VDD = 25 V
0
25
91015_12c
50
75
100
125
150
175
S15-2693-Rev. C, 16-Nov-15
IRF510, SiHF510
www.vishay.com
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
D.U.T.
Rg
dV/dt controlled by Rg
Driver same type as D.U.T.
ISD controlled by duty factor D
D.U.T. - device under test
+
-
VDD
Period
D=
P.W.
Period
VGS = 10 Va
Re-applied
voltage
Inductor current
VDD
Ripple 5 %
ISD
Note
a. VGS = 5 V for logic level devices
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91015.
S15-2693-Rev. C, 16-Nov-15
Package Information
www.vishay.com
Vishay Siliconix
TO-220-1
A
DIM.
Q
H(1)
D
L(1)
M*
b(1)
INCHES
MIN.
MAX.
MIN.
MAX.
4.24
4.65
0.167
0.183
0.69
1.02
0.027
0.040
b(1)
1.14
1.78
0.045
0.070
F
P
MILLIMETERS
0.36
0.61
0.014
0.024
14.33
15.85
0.564
0.624
9.96
10.52
0.392
0.414
2.41
2.67
0.095
0.105
e(1)
4.88
5.28
0.192
0.208
1.14
1.40
0.045
0.055
H(1)
6.10
6.71
0.240
0.264
0.115
J(1)
2.41
2.92
0.095
13.36
14.40
0.526
0.567
L(1)
3.33
4.04
0.131
0.159
3.53
3.94
0.139
0.155
2.54
3.00
0.100
0.118
b
e
J(1)
e(1)
Package Picture
ASE
Revison: 14-Dec-15
Xian
Vishay
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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Vishay), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Revision: 02-Oct-12