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IRF510, SiHF510

www.vishay.com

Vishay Siliconix

Power MOSFET
FEATURES

PRODUCT SUMMARY
VDS (V)

100

RDS(on) ()

VGS = 10 V

Qg max. (nC)

0.54
8.3

Qgs (nC)

2.3

Qgd (nC)

3.8

Configuration

Single
D

Dynamic dV/dt rating


Available
Repetitive avalanche rated
175 C operating temperature
Available
Fast switching
Ease of paralleling
Simple drive requirements
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912

Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.

TO-220AB

DESCRIPTION
G

Third generation power MOSFETs from Vishay provide the


designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.

S
N-Channel MOSFET

ORDERING INFORMATION INFORMATION


Package

TO-220AB
IRF510PbF

Lead (Pb)-free

SiHF510-E3
IRF510

SnPb

SiHF510

ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)


PARAMETER

SYMBOL

LIMIT

Drain-Source Voltage

VDS

100

Gate-Source Voltage

VGS

20

Continuous Drain Current

VGS at 10 V

TC = 25 C
TC = 100 C

Pulsed Drain Current a

ID
IDM

Linear Derating Factor

UNIT
V

5.6
4.0

20
0.29

W/C

Single Pulse Avalanche Energy b

EAS

75

mJ

Repetitive Avalanche Current a

IAR

5.6

EAR

4.3

mJ

PD

43

dV/dt

5.5

V/ns

TJ, Tstg

-55 to +175

Repetitive Avalanche

Energy a

Maximum Power Dissipation

TC = 25 C

Peak Diode Recovery dV/dt c


Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak temperature) d
Mounting Torque

for 10 s
6-32 or M3 screw

300

10

lbf in

1.1

Nm

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 C, L = 4.8 mH, Rg = 25 , IAS = 5.6 A (see fig. 12).
c. ISD 5.6 A, dI/dt 75 A/s, VDD VDS, TJ 175 C.
d. 1.6 mm from case.
S15-2693-Rev. C, 16-Nov-15

Document Number: 91015


1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF510, SiHF510
www.vishay.com

Vishay Siliconix

THERMAL RESISTANCE RATINGS


PARAMETER

SYMBOL

TYP.

MAX.

Maximum Junction-to-Ambient

RthJA

62

Case-to-Sink, Flat, Greased Surface

RthCS

0.50

Maximum Junction-to-Case (Drain)

RthJC

3.5

UNIT

C/W

SPECIFICATIONS (TJ = 25 C, unless otherwise noted)


PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

VDS

VGS = 0 V, ID = 250 A

100

VDS/TJ

Reference to 25 C, ID = 1 mA

0.12

V/C

VGS(th)

VDS = VGS, ID = 250 A

2.0

4.0

Gate-Source Leakage

IGSS

VGS = 20 V

100

nA

25

IDSS

VDS = 100 V, VGS = 0 V

Zero Gate Voltage Drain Current

VDS = 80 V, VGS = 0 V, TJ = 150 C

250

0.54

1.3

180

Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage

Drain-Source On-State Resistance


Forward Transconductance

RDS(on)
gfs

ID =3.4 A b

VGS = 10 V

VDS = 50 V, ID = 3.4

Ab

Dynamic
Input Capacitance

Ciss

VGS = 0 V,

Output Capacitance

Coss

VDS = 25 V,

81

Reverse Transfer Capacitance

Crss

f = 1.0 MHz, see fig. 5

15

Total Gate Charge

Qg

ID = 5.6 A, VDS = 80 V

8.3

Gate-Source Charge

Qgs

VDS = 10 V,

2.3

Gate-Drain Charge

Qgd

Turn-On Delay Time

td(on)

Rise Time
Turn-Off Delay Time
Fall Time

tr
td(off)

VGS = 10 V

see fig. 6 and fig. 13 b

VDD = 50 V, ID = 5.6 A
Rg = 24 , RD = 8.4, see fig. 10 b

tf

Internal Drain Inductance

LD

Internal Source Inductance

LS

Between lead,
6 mm (0.25") from
package and center of
die contact

pF

nC

3.8

6.9

16

15

9.4

4.5

7.5

5.6

20

2.5

100

200

ns

0.44

0.88

ns

nH

Drain-Source Body Diode Characteristics


Continuous Source-Drain Diode Current

IS

Pulsed Diode Forward Currenta

ISM

Body Diode Voltage

VSD

Body Diode Reverse Recovery Time

trr

Body Diode Reverse Recovery Charge

Qrr

Forward Turn-On Time

ton

MOSFET symbol
showing the
integral reverse
p - n junction diode

TJ = 25 C, IS = 5.6 A, VGS = 0 V b
TJ = 25 C, IF = 5.6 A, dI/dt = 100 A/s b

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 s; duty cycle 2 %.

S15-2693-Rev. C, 16-Nov-15

Document Number: 91015


2
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF510, SiHF510
www.vishay.com

Vishay Siliconix

VGS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
Top

100
4.5 V
20 s pulse width
TC = 25 C
10-1

100

101

VDS, Drain-to-Source Voltage (V)

91015_01

Fig. 1 - Typical Output Characteristics, TC = 25 C

ID, Drain Current (A)

ID = 5.6 A
VGS = 10 V

2.5
2.0
1.5
1.0
0.5
0.0
- 60 - 40 - 20 0

20 40 60 80 100 120 140 160 180

TJ, Junction Temperature (C)

Fig. 4 - Normalized On-Resistance vs. Temperature

400

VGS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom 4.5 V

101

3.0

91015_04

VGS = 0 V, f = 1 MHz
Ciss = Cgs + Cgd, Cds shorted
Crss = Cgd
Coss = Cds + Cgd

Top

100

320

4.5 V

Capacitance (pF)

ID, Drain Current (A)

101

RDS(on), Drain-to-Source On Resistance


(Normalized)

TYPICAL CHARACTERISTICS (25 C, unless otherwise noted)

240
Ciss
160

Coss

80
Crss

20 s pulse width
TC = 175 C
100

10-1

100

VDS, Drain-to-Source Voltage (V)

91015_02

25 C

VGS, Gate-to-Source Voltage (V)

ID, Drain Current (A)

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

20

101

175 C

100

20 s pulse width
VDS = 50 V

10-1
4

VGS, Gate-to-Source Voltage (V)


Fig. 3 - Typical Transfer Characteristics

S15-2693-Rev. C, 16-Nov-15

101

VDS, Drain-to-Source Voltage (V)

91015_05

Fig. 2 - Typical Output Characteristics, TC = 175 C

91015_03

101

ID = 5.6 A
VDS = 80 V

16

VDS = 50 V
VDS = 20 V

12

4
For test circuit
see figure 13

10

0
91015_06

10

QG, Total Gate Charge (nC)

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

Document Number: 91015


3
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF510, SiHF510
www.vishay.com

Vishay Siliconix

175 C

100

5.0

ID, Drain Current (A)

ISD, Reverse Drain Current (A)

6.0

25 C

4.0
3.0
2.0
1.0

10-1
VGS = 0 V
0.5

0.6

0.7

0.8

0.9

1.0

1.1

0.0

1.2

25

VSD, Source-to-Drain Voltage (V)

91015_07

50

ID, Drain Current (A)

125

150

RD

VDS

Operation in this area limited


by RDS(on)

VGS

D.U.T.

RG

10

175

Fig. 9 - Maximum Drain Current vs. Case Temperature

102
5

100

TC, Case Temperature (C)

91015_09

Fig. 7 - Typical Source-Drain Diode Forward Voltage

75

+
- VDD

100 s

10 V
1 ms

Pulse width 1 s
Duty factor 0.1 %

10 ms

Fig. 10a - Switching Time Test Circuit

TC = 25 C
TJ = 175 C
single pulse

0.1

10

VDS
102

90 %

103

VDS, Drain-to-Source Voltage (V)

91015_08

Fig. 8 - Maximum Safe Operating Area

10 %
VGS
td(on)

td(off) tf

tr

Fig. 10b - Switching Time Waveforms

Thermal Response (ZthJC)

10

0 - 0.5
1
0.2
0.1

0.1

0.05
0.02
0.01

PDM
t1

Single pulse
(thermal response)

t2
Notes:
1. Duty factor, D = t1/t2
2. Peak Tj = PDM x ZthJC + TC

10-2
10-5
91015_11

10-4

10-3

10-2

0.1

10

t1, Rectangular Pulse Duration (s)


Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

S15-2693-Rev. C, 16-Nov-15

Document Number: 91015


4
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF510, SiHF510
www.vishay.com

Vishay Siliconix

L
Vary tp to obtain
required IAS

VDS

QG

10 V

D.U.T

RG

+
-

IAS

QGS

VG

10 V

0.01

tp

QGD

V DD

Charge
Fig. 12a - Unclamped Inductive Test Circuit

Fig. 13a - Basic Gate Charge Waveform


Current regulator
Same type as D.U.T.

VDS
50 k

tp

12 V

0.2 F

VDD

0.3 F

D.U.T.

VDS

VDS

VGS
3 mA

IAS

IG
ID
Current sampling resistors

Fig. 12b - Unclamped Inductive Waveforms

EAS, Single Pulse Energy (mJ)

300

Fig. 13b - Gate Charge Test Circuit

ID
2.3 A
4.0 A
Bottom 5.6 A
Top

250
200
150
100
50
VDD = 25 V
0
25

91015_12c

50

75

100

125

150

175

Starting TJ, Junction Temperature (C)

Fig. 12c - Maximum Avalanche Energy vs. Drain Current

S15-2693-Rev. C, 16-Nov-15

Document Number: 91015


5
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

IRF510, SiHF510
www.vishay.com

Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+

D.U.T.

Circuit layout considerations


Low stray inductance
Ground plane
Low leakage inductance
current transformer

Rg

dV/dt controlled by Rg
Driver same type as D.U.T.
ISD controlled by duty factor D
D.U.T. - device under test

+
-

VDD

Driver gate drive


P.W.

Period

D=

P.W.
Period
VGS = 10 Va

D.U.T. lSD waveform


Reverse
recovery
current

Body diode forward


current
dI/dt
D.U.T. VDS waveform
Diode recovery
dV/dt

Re-applied
voltage
Inductor current

VDD

Body diode forward drop

Ripple 5 %

ISD

Note
a. VGS = 5 V for logic level devices

Fig. 14 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91015.

S15-2693-Rev. C, 16-Nov-15

Document Number: 91015


6
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Package Information
www.vishay.com

Vishay Siliconix

TO-220-1
A

DIM.

Q
H(1)
D

L(1)

M*

b(1)

INCHES

MIN.

MAX.

MIN.

MAX.

4.24

4.65

0.167

0.183

0.69

1.02

0.027

0.040

b(1)

1.14

1.78

0.045

0.070

F
P

MILLIMETERS

0.36

0.61

0.014

0.024

14.33

15.85

0.564

0.624

9.96

10.52

0.392

0.414

2.41

2.67

0.095

0.105

e(1)

4.88

5.28

0.192

0.208

1.14

1.40

0.045

0.055

H(1)

6.10

6.71

0.240

0.264
0.115

J(1)

2.41

2.92

0.095

13.36

14.40

0.526

0.567

L(1)

3.33

4.04

0.131

0.159

3.53

3.94

0.139

0.155

2.54

3.00

0.100

0.118

ECN: X15-0364-Rev. C, 14-Dec-15


DWG: 6031
Note
M* = 0.052 inches to 0.064 inches (dimension including
protrusion), heatsink hole for HVM
C

b
e
J(1)
e(1)

Package Picture
ASE

Revison: 14-Dec-15

Xian

Document Number: 66542


1
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Legal Disclaimer Notice


www.vishay.com

Vishay

Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
Vishay), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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Statements regarding the suitability of products for certain types of applications are based on Vishays knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customers responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customers
technical experts. Product specifications do not expand or otherwise modify Vishays terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Material Category Policy


Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.

Revision: 02-Oct-12

Document Number: 91000

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