APM2513NU

N-Channel Enhancement Mode MOSFET

Features

Pin Description

25V/40A,
RDS(ON)=10.5m (typ.) @ VGS=10V
RDS(ON)=16m (typ.) @ VGS=4.5V

Super High Dense Cell Design

Avalanche Rated

Top View of TO-252

Reliable and Rugged

D

Lead Free Available (RoHS Compliant)

Applications
G

Power Management in Desktop Computer or

DC/DC Converters
S

N-Channel MOSFET

Ordering and Marking Information

Package Code
U : TO-252
Operating Junction Temp. Range
C : -55 to 150 C
Handling Code
TU : Tube
TR : Tape & Reel
Lead Free Code
L : Lead Free Device

APM2513N
Lead Free Code
Handling Code
Temp. Range
Package Code

APM2513N U :

APM2513N
XXXXX

XXXXX - Date Code

Note: ANPEC lead-free products contain molding compounds and 100% matte tin plate termination finish;
which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations.
ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL
classification at lead-free peak reflow temperature.

ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
Copyright ANPEC Electronics Corp.
Rev. A.1 - Jan., 2007

www.anpec.com.tw

APM2513NU
Absolute Maximum Ratings
Symbol

Parameter

Rating

Unit

Common Ratings (TA=25C Unless Otherwise Noted)

VDSS

Drain-Source Voltage

25

VGSS

Gate-Source Voltage

20

Maximum Junction Temperature

150

-55 to 150

TC=25C

20

TC=25C

100

TC=100C

80

TC=25C

40

TC=100C

25

TC=25C

50

TC=100C

20

TJ
TSTG

Storage Temperature Range

IS

Diode Continuous Forward Current

IDP

300s Pulse Drain Current Tested

ID

Continuous Drain Current

PD

Maximum Power Dissipation

A
W

RJC

Thermal Resistance-Junction to Case

2.5

C/W

RJA

Thermal Resistance-Junction to Ambient

50

C/W

EAS

Drain-Source Avalanche Energy, L=0.5mH

80

mJ

Notes:
* Current limited by bond wire.

Electrical Characteristics
Symbol

Parameter

Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS

Zero Gate Voltage Drain Current

VGS(th)
IGSS
RDS(ON)

(TA = 25C)

Test Condition

VGS=0V, IDS=250A

Gate Leakage Current

VGS=20V, VDS=0V

trr

Reverse Recovery Time

Qrr

Reverse Recovery Charge

Copyright ANPEC Electronics Corp.

Rev. A.1 - Jan., 2007

Typ.

Max.

25
1
30
1.3

1.8

100

nA

10.5

13

VGS=4.5V, IDS=10A

16

23

ISD=10A, VGS=0V

0.8

1.1

2.5

VGS=10V, IDS=20A

IDS=20A, dlSD/dt=100A/s

Unit

TJ=85C
VDS=VGS, IDS=250A

Diode Characteristics
a
VSD
Diode Forward Voltage

Min.

VDS=20V, VGS=0V

Gate Threshold Voltage

Drain-Source On-state Resistance

APM2513NU

18

ns

nC
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APM2513NU
Electrical Characteristics (Cont.)
Symbol

Parameter

(TA = 25C)

Test Condition

APM2513NU
Min.

Typ.

Max.

0.8

1.5

860

1120

Unit

Dynamic Characteristics
RG
Gate Resistance

VGS=0V,VDS=0V,F=1MHz

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

td(ON)

Turn-on Delay Time

tr

Turn-on Rise Time

td(OFF)

Turn-off Delay Time

tf

VGS=0V,
VDS=15V,
Frequency=1.0MHz

VDD=15V, RL=15,
IDS=1A, VGEN=10V,
RG=6

Turn-off Fall Time

Gate Charge Characteristics

Qg
Total Gate Charge

pF

180
130
8

15

13

24

29

53

15

20

28

ns

Qgs

Gate-Source Charge

Qgd

Gate-Drain Charge

VDS=15V, VGS=10V,
IDS=20A

nC

6.4

Notes:
a : Pulse test ; pulse width300s, duty cycle2%.
b : Guaranteed by design, not subject to production testing.

Copyright ANPEC Electronics Corp.

Rev. A.1 - Jan., 2007

www.anpec.com.tw

APM2513NU
Typical Characteristics
Drain Current

Power Dissipation
50

60

40

ID - Drain Current (A)

Ptot - Power (W)

50

40

30

20

30

20

10

10
o

TC=25 C
0

20 40 60 80 100 120 140 160 180

20

40

60

80 100 120 140 160

Tj - Junction Temperature (C)

Tj - Junction Temperature (C)

Safe Operation Area

Thermal Transient Impedance

300

n)
s(o
Rd

Normalized Effective Transient

100

ID - Drain Current (A)

TC=25 C,VG=10V

it
Lim

1ms
10ms

10

100ms
1s
DC

Duty = 0.5
0.2
0.1
0.05
0.02

0.1
0.01

Single Pulse

Mounted on 1in pad

o
RJA :50 C/W

T =25 C
0.1 C
0.1

10

0.01
1E-4

100

0.01

0.1

10

100

Square Wave Pulse Duration (sec)

VDS - Drain - Source Voltage (V)

Copyright ANPEC Electronics Corp.

Rev. A.1 - Jan., 2007

1E-3

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APM2513NU
Typical Characteristics (Cont.)
Drain-Source On Resistance

Output Characteristics
32

100
VGS=6,7,8,9,10V

90

28

RDS(ON) - On - Resistance (m)

5V

ID - Drain Current (A)

80
70

4.5V

60
4V

50
40

3.5V
30
20

3V

10

24

VGS= 4.5V

20
16
VGS=10V

12
8
4

2.5V

0
0.0

0
0.5

1.0

1.5

2.0

2.5

3.0

20

40

60

VDS - Drain-Source Voltage (V)

ID - Drain Current (A)

Drain-Source On Resistance

Gate Threshold Voltage

IDS =250A

ID=20A
28

Normalized Threshold Vlotage

RDS(ON) - On - Resistance (m)

100

1.6

32

24
20
16
12

1.4
1.2
1.0
0.8
0.6
0.4

8
4

80

0.2
-50 -25

10

25

50

75 100 125 150

Tj - Junction Temperature (C)

VGS - Gate - Source Voltage (V)

Copyright ANPEC Electronics Corp.

Rev. A.1 - Jan., 2007

www.anpec.com.tw

APM2513NU
Typical Characteristics (Cont.)
Drain-Source On Resistance

Source-Drain Diode Forward

2.0

100

VGS = 10V
IDS = 20A

1.6
o

1.4

IS - Source Current (A)

Normalized On Resistance

1.8

1.2
1.0
0.8
0.6
0.4

Tj=150 C

10
o

Tj=25 C

0.2
o

RON@Tj=25 C: 10.5m

0.0
-50 -25

25

50

0.5
0.0

75 100 125 150

1.6

Capacitance

Gate Charge
VDS=15V
ID = 20A

VGS - Gate-source Voltage (V)

1200
1000
Ciss
800
600
400
Coss

200 Crss

2.0

10
9

C - Capacitance (pF)

1.2

VSD - Source-Drain Voltage (V)

Frequency=1MHz

8
7
6
5
4
3
2
1
0

0.8

Tj - Junction Temperature (C)

1400

0.4

10

15

20

25

12

16

20

QG - Gate Charge (nC)

VDS - Drain - Source Voltage (V)

Copyright ANPEC Electronics Corp.

Rev. A.1 - Jan., 2007

www.anpec.com.tw

APM2513NU
Avalanche Test Circuit and Waveforms

VDS
L

tp

VDSX(SUS)

DUT

VDS
IAS

RG
VDD

VDD
IL

tp

EAS

0.01

tAV

Avalanche Test Circuit and Waveforms

VDS
RD

VDS

DUT

90%

VGS
RG
VDD
10%

tp

VGS
td(on) tr

Copyright ANPEC Electronics Corp.

Rev. A.1 - Jan., 2007

td(off) tf

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APM2513NU
Package Information
TO252
E

A
c2

E1

L4

D1

L3

b3

c
e

SEE VIEW A

SEATING PLANE
L

0.25

GAUGE PLANE

A1

VIEW A

TO252

S
Y
M
B
O
L

MIN.

MAX.

MIN.

MAX.

2.18

2.39

0.086

0.094

MILLIMETERS

INCHES

0.005

0.13

A1
b

0.50

0.89

0.020

0.035

b3

4.95

5.46

0.195

0.215

0.46

0.61

0.018

0.024

c2

0.46

0.89

0.018

0.035

5.33

6.22

0.210

0.245

D1

4.57

6.35

E1

3.81

0.180
0.250

6.73

0.265

0.150
2.29 BSC

0.090 BSC

9.40

10.41

0.370

0.410

0.90

1.78

0.035

0.070

L3

0.89

2.03

0.035

0.080

L4
0

0.040

1.02
0

Copyright ANPEC Electronics Corp.

Rev. A.1 - Jan., 2007

www.anpec.com.tw

APM2513NU
Carrier Tape
t
D

Po
E

P1

Bo

F
W

Ko

Ao

D1

T2

J
C
A

T1

Application

TO-252

J
2 0.5

T1
16.4 + 0.3
-0.2

330 3

100 2

13 0. 5

D1

Po

P1

7.5 0.1

1.5 +0.1

1.5 0.25 4.0 0.1

2.0 0.1

T2

2.5 0.5

W
16+ 0.3
- 0.1

8 0.1

1.75 0.1

Ao

Bo

Ko

2.5 0.1

0.30.05

6.8 0.1 10.4 0.1

(mm)

Cover Tape Dimensions

Application
TO- 252

Carrier Width
16

Copyright ANPEC Electronics Corp.

Rev. A.1 - Jan., 2007

Cover Tape Width

13.3

Devices Per Reel

2500

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APM2513NU
Physical Specifications
Terminal Material
Lead Solderability

Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn

Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.

Reflow Condition

(IR/Convection or VPR Reflow)

tp

TP

Critical Zone
T L to T P

Temperature

Ramp-up

TL

tL
Tsmax

Tsmin
Ramp-down
ts
Preheat

25

t 25 C to Peak

Tim e

Classificatin Reflow Profiles

Profile Feature
Average ramp-up rate
(TL to TP)
Preheat
- Temperature Min (Tsmin)
- Temperature Max (Tsmax)
- Time (min to max) (ts)
Time maintained above:
- Temperature (TL)
- Time (tL)
Peak/Classificatioon Temperature (Tp)
Time within 5C of actual
Peak Temperature (tp)
Ramp-down Rate

Sn-Pb Eutectic Assembly

Pb-Free Assembly

3C/second max.

3C/second max.

100C
150C
60-120 seconds

150C
200C
60-180 seconds

183C
60-150 seconds

217C
60-150 seconds

See table 1

See table 2

10-30 seconds

20-40 seconds

6C/second max.
6C/second max.
6 minutes max.
8 minutes max.
Time 25C to Peak Temperature
Notes: All temperatures refer to topside of the package .Measured on the body surface.
Copyright ANPEC Electronics Corp.
Rev. A.1 - Jan., 2007

10

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APM2513NU
Classification Reflow Profiles(Cont.)
Table 1. SnPb Entectic Process Package Peak Reflow Temperatures
3
3
Package Thickness
Volume mm
Volume mm
<350
350
<2.5 mm
240 +0/-5C
225 +0/-5C
2.5 mm
225 +0/-5C
225 +0/-5C

Table 2. Pb-free Process Package Classification Reflow Temperatures

3
3
3
Package Thickness
Volume mm
Volume mm
Volume mm
<350
350-2000
>2000
<1.6 m m
260 +0C*
260 +0C*
260 +0C*
1.6 m m 2.5 m m
260 +0C*
250 +0C*
245 +0C*
2.5 m m
250 +0C*
245 +0C*
245 +0C*
*Tolerance: The device manufacturer/supplier shall assure process compatibility up to and
including the stated classification temperature (this means Peak reflow temperature +0C.
For example 260C+0C) at the rated MSL level.

Reliability Test Program

Test item
SOLDERABILITY
HOLT
PCT
TST

Method
MIL-STD-883D-2003
MIL-STD-883D-1005.7
JESD-22-B,A102
MIL-STD-883D-1011.9

Description
245C, 5 SEC
1000 Hrs Bias @125C
168 Hrs, 100%RH, 121C
-65C~150C, 200 Cycles

Customer Service
Anpec Electronics Corp.
Head Office :
No.6, Dusing 1st Road, SBIP,
Hsin-Chu, Taiwan, R.O.C.
Tel : 886-3-5642000
Fax : 886-3-5642050
Taipei Branch :
7F, No. 137, Lane 235, Pac Chiao Rd.,
Hsin Tien City, Taipei Hsien, Taiwan, R. O. C.
Tel : 886-2-89191368
Fax : 886-2-89191369

Copyright ANPEC Electronics Corp.

Rev. A.1 - Jan., 2007

11

www.anpec.com.tw