MJE13009

HIGH VOLTAGE FAST-SWITCHING

NPN POWER TRANSISTOR

STMicroelectronics PREFERRED
SALESTYPE
HIGH VOLTAGE CAPABILITY
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
LOW BASE-DRIVE REQUIREMENTS
VERY HIGH SWITCHING SPEED
FULLY CHARACTERIZED AT 125oC
3

APPLICATIONS
ELECTRONIC TRANSFORMER FOR
HALOGEN LAMPS
SWITCH MODE POWER SUPPLIES
DESCRIPTION
The MJE13009 is a high voltage Multiepitaxial
Mesa NPN transistor mounted in Jedec TO-220
plastic package. It uses a Hollow Emitter
structure to enhance switching speeds.

TO-220

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

V CEO

Collector-Emitter Voltage (I B = 0)

400

V CEV

Collector-Emitter Voltage (V BE = -1.5 V)

700

V EBO

Emitter-Base Voltage (I C = 0)

Collector Current

12

Collector Peak Current (t p 10 ms)

Base Current

25

IC
I CM
IB
I BM
IE

Base Peak Current (t p 10 ms)

Emitter Current

I EM

Emitter Peak Current

P tot

Total Power Dissipation at T c 25 o C

Storage Temperature

T stg
Tj

Max. Operating Junction Temperature

12

18

36

110

-65 to 150

150

November 2002

This datasheet has been downloaded from http://www.digchip.com at this page

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MJE13009
THERMAL DATA
R thj-case

Thermal Resistance Junction-case

Max

1.14

C/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

Symbol

Parameter

Test Conditions

I CEV

Collector Cut-off
V CE = 700 V
Current (V EB = -1.5 V) V CE = 700 V

I EBO

Emitter Cut-off
Current (I C = 0)

V CEO(sus) Collector-Emitter
Sustaining Voltage
(I B = 0)
V CE(sat)

V BE(sat)

h FE
fT
C OB

t on
ts
tf

Collector-Emitter
Saturation Voltage

Base-Emitter
Saturation Voltage

Min.

T case = 100 o C

V EB = 9 V
I C = 10 mA

IC = 5 A
IC = 8 A
I C = 12 A
IC = 8 A
T case = 100 o C

IB
IB
IB
IB

IC = 5 A
IC = 8 A
IC = 8 A
T case = 100 o C

IB = 1 A
I B = 1.6 A
I B = 1.6 A

=
=
=
=

V CE = 5 V
V CE = 5 V

8
6

Transition Frequency

I C = 500 mA

V CE = 10 V

Output Capacitance
(I E = 0)

V CB = 10 V

f = 0.1 MHz

I C = 8A
t p = 25 s
(see figure 2)

Pulsed: Pulse duration = 300s, duty cycle 2 %

Safe Operating Areas

2/6

Unit

1
5

mA
mA

mA
V

1A
1.6 A
3A
1.6 A

IC = 5 A
IC = 8 A

V CC = 125 V
I B1 = -IB2 = 1.6 A
Duty Cycle 1

Max.

400

DC Current Gain

RESISTIVE LOAD
Turn-on Time
Storage Time
Fall Time

Typ.

Derating Curve

1
1.5
3

V
V
V

1.2
1.6

V
V

1.5

40
30
MHz
180

pF

1.1
3
0.7

s
s
s

MJE13009
DC Current Gain

DC Current Gain

Collector Emitter Saturation Voltage

Base Emitter Saturation Voltage

Inductive Load Fall Time

Inductive Load Storage Time

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MJE13009
Reverse Biased SOA

Figure 1: Inductive Load Switching Test Circuit

1) Fast electronic switch

2) Non-inductive Resistor
3) Fast recovery rectifier

Figure 2: Resistive Load Switching Test Ciurcuit

1) Fast electronic switch

2) Non-inductive Resistor

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MJE13009

TO-220 MECHANICAL DATA

DIM.

mm
MIN.

TYP.

inch
MAX.

MIN.

TYP.

MAX.

4.40

4.60

0.173

0.181

1.23

1.32

0.048

0.052

2.40

2.72

0.094

0.107

0.49

0.70

0.019

0.027

0.61

0.88

0.024

0.034

F1

1.14

1.70

0.044

0.067

F2

1.14

1.70

0.044

0.067

4.95

5.15

0.194

0.202

G1

2.40

2.70

0.094

0.106

H2

10.00

10.40

0.394

L2
L4

16.40
13.00

0.409
0.645

14.00

0.511

0.551
0.116

L5

2.65

2.95

0.104

L6

15.25

15.75

0.600

0.620

L7

6.20

6.60

0.244

0.260

L9

3.50

3.93

0.137

0.154

3.85

0.147

M
DIA.

2.60
3.75

0.102
0.151

P011CI
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MJE13009

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granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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