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Classes of Materials
Conductors
Materials with very low resistance
Gold, Copper and Aluminum
Insulators
Materials with very high resistance
Dry wood and plastic
Semiconductors
Materials with properties that fall somewhere
between conductors and insulators
Conduction
The transfer of energy, such as heat or an
electric charge, through a substance.
Occur from the movement of either electrons
or holes.
Doping
The processing of semiconductor materials for
device construction.
Addition of impurities (donors or acceptors)
Semiconductor Material
P-type
Semiconductor materials having an excess of
positive charge carriers
N-type
Materials having an excess of negative charge
carriers
Diodes
Junction Diode
Created by combining a section of P-type
material with a section of N-type material.
Current flows
easily in this
direction
P-type Material
N-type Material
Strong opposition
to current flow in
this direction
Anode
Cathode
Schematic Symbol
Junction Diode
Diode Terminal Characteristics
ID
Forward Bias
R
A
Vs
V
Breakdown
Voltage
Reverse Bias
Threshold VD
Voltage
Forward
Bias
Reverse
Bias
+
VD
ID
-
Short
Circuit
ID
Open
Circuit
VR
+
VD
Reverse
Bias
Forward
Bias
+
VD
ID
-
Constant +
Voltage -
VD0.7 V
Open
Circuit
VR
+
VD
VD0.7 V
Example 1
For the circuit, determine the loop current,
the voltage across the diode, and the voltage
across the resistance.
VD
+
I
12V
+
_
+
VR
-
2k
Example 2
For the circuit, determine the loop current,
the voltage across the diode, and the voltage
across the resistance.
VD
+
I
12V
+
_
+
VR
-
2k
Optocoupler
Implented with diodes consists of LED
coupled with photodiode
Varactor Diode
It exploits the capacitance effect when diode is
reverse biased.
Transistor
Transistor
A transistor is a semiconductor device used to
amplify and switch electronic signals and
electrical power.
Three terminal active devices made from
different semiconductor materials that can act
as either an insulator or a conductor.
Types:
Bipolar Junction Transistor (BJT)
Field Effect Transistor (FET)
C
B
B
E
NPN or P-type
E
PNP or N-type
BJT Construction
IE IC IB
Saturation Region
- Corresponds to forward bias for
both base-emitter and the basecollector junctions.
Active Region
- Corresponds to forward bias for the
base-emitter and reverse bias for
the base-collector junctions.
Saturation
Region
Active Region
Cutoff Region
BJT Configurations
Common Base Configuration
BJT Configurations
Common Emitter Configuration
BJT Configurations
Common Collector Configuration
I E I B IC
IC
IB
IC
IE
Example 4
Determine the value of dc for the idealized
transistor.
IC
20 mA
16 mA
12 mA
8 mA
4 mA
IB = 100 A
IB = 80 A
IB = 60 A
IB = 40 A
IB = 20 A
IB = 0
VCE
Junction Field
Effect Transistors
(JFETs)
Depletion Mode
N-Channel
P-Channel
Metal-oxide
Semiconductor
FETs (MOSFETs)
Enhancement
Mode
Depletion Mode
N-Channel
P-Channel
N-Channel
P-Channel
JFET Construction
N-channel
P-channel
Ohmic Region
When VGS = 0 the depletion layer of the
channel is very small and the JFET acts like a
voltage controlled resistor.
Cut-Off Region
This is also known as the pinch-off region
were the Gate voltage, VGS is sufficient to
cause the JFET to act as an open circuit as the
channel resistance is at maximum.
Breakdown Region
The voltage between the Drain and the
Source, ( VDS ) is high enough to causes the
JFETs resistive channel to break down and
pass uncontrolled maximum current.
MOSFET Configuration
N-type
P-type