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Product specification
TrenchMOS transistor
Logic level FET
BUK9575-100A
BUK9675-100A
GENERAL DESCRIPTION
N-channel enhancement mode logic
level field-effect power transistor in a
plastic envelope available in
TO220AB and SOT404 . Using
trench technology which features
very low on-state resistance. It is
intended for use in automotive and
general
purpose
switching
applications.
PARAMETER
VDS
ID
Ptot
Tj
RDS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
VGS = 5 V
VGS = 10 V
MAX.
UNIT
100
23
99
175
V
A
W
C
75
55
m
m
PINNING
TO220AB & SOT404
PIN
PIN CONFIGURATION
SYMBOL
DESCRIPTION
gate
drain
source
d
tab
mb
2
1
tab/mb drain
3
SOT404
BUK9675-100A
1 2 3
TO220AB
BUK9575-100A
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
VDGR
VGS
ID
ID
IDM
Ptot
Tstg, Tj
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
RGS = 20 k
Tmb = 25 C
Tmb = 100 C
Tmb = 25 C
Tmb = 25 C
-
- 55
100
100
15
23
16
91
98
175
V
V
V
A
A
A
W
C
TYP.
MAX.
UNIT
1.5
K/W
in free air
60
K/W
50
K/W
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
Rth j-mb
Rth j-a
Rth j-a
October 2000
Rev 1.200
Philips Semiconductors
Product specification
TrenchMOS transistor
Logic level FET
BUK9575-100A
BUK9675-100A
STATIC CHARACTERISTICS
Tj= 25C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS
Drain-source breakdown
voltage
Gate threshold voltage
VGS(TO)
MIN.
TYP.
MAX.
UNIT
VGS = 10 V; ID = 10 A
VGS = 4.5 V; ID = 10 A
100
89
1
0.5
-
1.5
0.05
2
60
55
61
2.0
2.3
10
500
100
75
188
72
84
V
V
V
V
V
A
A
nA
m
m
m
m
MIN.
TYP.
MAX.
UNIT
Tj = -55C
VDS = VGS; ID = 1 mA
Tj = 175C
Tj = -55C
IDSS
IGSS
RDS(ON)
VGS = 10 V; VDS = 0 V
VGS = 5 V; ID = 10 A
Tj = 175C
Tj = 175C
DYNAMIC CHARACTERISTICS
Tmb = 25C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
Ciss
Coss
Crss
Input capacitance
Output capacitance
Feedback capacitance
1278
129
88
1704
155
120
pF
pF
pF
td on
tr
td off
tf
13
120
58
57
20
168
87
86
ns
ns
ns
ns
Ld
4.5
nH
Ld
3.5
nH
Ld
2.5
nH
Ls
7.5
nH
MIN.
TYP.
MAX.
UNIT
23
IF = 10 A; VGS = 0 V
IF = 23 A; VGS = 0 V
0.85
1.1
92
1.2
-
A
V
V
63
0.22
ns
C
PARAMETER
IDR
IDRM
VSD
trr
Qrr
October 2000
CONDITIONS
Rev 1.200
Philips Semiconductors
Product specification
TrenchMOS transistor
Logic level FET
BUK9575-100A
BUK9675-100A
120
PARAMETER
CONDITIONS
Drain-source non-repetitive
unclamped inductive turn-off
energy
ID = 14.2 A; VDD 25 V;
VGS = 5 V; RGS = 50 ; Tmb = 25 C
PD%
MIN.
TYP.
MAX.
UNIT
100
mJ
100
RDS(ON)=VDS/ID
110
tp =
1us
ID/A
100
90
80
10us
70
60
10
100us
50
40
DC
30
1ms
20
10
10ms
0
0
20
40
60
80
100
Tmb / C
120
140
160
180
10
100
1000
VDS/V
120
ID%
Zth/(K/W)
10
110
100
90
80
70
60
50
0.1
40
0.5
0.2
0.1
0.05
0.02
30
0.01
1E-07
20
10
1E-05
1E-03
1E-01
1E+01
0
0
20
40
60
80
100
Tmb / C
120
140
160
180
t/s
Rev 1.200
Philips Semiconductors
Product specification
TrenchMOS transistor
Logic level FET
BUK9575-100A
BUK9675-100A
VGS/V =
ID/A
5.0
10.0
75
4.0
3.8
3.6
3.4
50
40
3.2
30
3.0
RDS(ON) Ohm
60
70
65
60
2.8
20
2.6
10
55
2.4
2.2
50
0
0
10
6
7
VGS/V
VDS/V
RDS(ON)/mOhm
140
10
25
4.0
4.2
130
ID/A
20
120
110
4.4
100
15
4.6
4.8
5.0
90
10
80
Tj/C= 175
70
25
60
50
40
10
15
20
25
ID/A
30
35
0.0
40
1.0
2.0
VGS/V
3.0
4.0
40
75
RDS(ON) Ohm
gfs/S
70
30
65
20
60
10
55
0
50
3
6
7
VGS/V
10
20
30
40
50
60
ID/A
October 2000
10
Rev 1.200
Philips Semiconductors
Product specification
TrenchMOS transistor
Logic level FET
BUK9575-100A
BUK9675-100A
3.0
2.5
Capacitance / nF
2.5
1.5
Ciss
1.0
Coss
Crss
0.0
0.01
-100
-50
50
100
Tmb / degC
150
0.1
1
VDS/V
200
2.5
1.5
0.5
0.5
2.0
10
100
VGS(TO) / V
5
VGS / V
max.
VDS = 14V
VDS = 44V
typ.
1.5
min.
1
0.5
0
0
-100
-50
50
Tj / C
100
150
200
10
15
20
25
QG / nC
Sub-Threshold Conduction
1E-01
40
IF/A
30
1E-02
2%
1E-03
typ
25
Tj/C= 150
98%
20
1E-04
10
1E-05
0
1E-05
0.0
0.5
1.5
2.5
October 2000
0.2
0.4
0.6
0.8
VSDS/V
1.0
1.2
1.4
Rev 1.200
Philips Semiconductors
Product specification
TrenchMOS transistor
Logic level FET
120
BUK9575-100A
BUK9675-100A
WDSS%
100
110
25C
IAV
100
90
80
25C
10
70
60
50
40
30
20
1
0.001
10
0.01
0.1
10
0
20
40
60
80
100
120
Tmb / C
140
160
180
VDD
RD
VDS
VDS
VGS
T.U.T.
0
RGS
RG
T.U.T.
R 01
shunt
October 2000
VGS
-ID/100
0
VDD
Rev 1.200
Philips Semiconductors
Product specification
TrenchMOS transistor
Logic level FET
BUK9575-100A
BUK9675-100A
MECHANICAL DATA
Dimensions in mm
4,5
max
Net Mass: 2 g
10,3
max
1,3
3,7
2,8
5,9
min
15,8
max
3,0 max
not tinned
3,0
13,5
min
1,3
max 1 2 3
(2x)
2,54 2,54
0,6
2,4
October 2000
Rev 1.200
Philips Semiconductors
Product specification
TrenchMOS transistor
Logic level FET
BUK9575-100A
BUK9675-100A
MECHANICAL DATA
Plastic single-ended surface mounted package (Philips version of D2-PAK); 3 leads
(one lead cropped)
SOT404
A
A1
mounting
base
D1
HD
2
Lp
3
c
b
e
2.5
5 mm
scale
A1
mm
4.50
4.10
1.40
1.27
0.85
0.60
0.64
0.46
OUTLINE
VERSION
D
max.
D1
11
1.60
1.20
10.30
9.70
Lp
HD
2.54
2.90
2.10
15.40
14.80
2.60
2.20
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
98-12-14
99-06-25
SOT404
Fig.22. SOT404 surface mounting package. Centre pin connected to mounting base.
Notes
1. This product is supplied in anti-static packaging. The gate-source input must be protected against static
discharge during transport or handling.
2. Refer to SMD Footprint Design and Soldering Guidelines, Data Handbook SC18.
3. Epoxy meets UL94 V0 at 1/8".
October 2000
Rev 1.200
Philips Semiconductors
Product specification
TrenchMOS transistor
Logic level FET
BUK9575-100A
BUK9675-100A
MOUNTING INSTRUCTIONS
Dimensions in mm
11.5
9.0
17.5
2.0
3.8
5.08
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 2000
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
October 2000
Rev 1.200