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1.

a.

b.

c.

d.

2.

is

a.

b.

c.

d.

3.

a.

b.

c.

d.

C ]

a.

b.

c.

d.

5.

a.

b.

c.

d.

6.

a.

2 C

b.

2 C

d.

7.

a.

b.

c.

d.

8.

a.

b.

c.

d.

a.

10

j C

10

d.

10.

a.

b.

c.

d.

11.

a.

b.

12.

a.

b.

c.

d.

13.

a.

b.

14.

a.

b.

c.

d.

15.

a.

b.

a.

b.

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c.

dc

d.

dc

17.

a.

b.

c.

a.

b.

c.

d.

19.

a.

b.

c.

a.

b.

c.

d.

21.

a.

b.

c.

d.

a.

b.

c.

d.

23.

a.

b.

c.

d.

26.

a.

b.

27.

a.

b.

c.

d.

28.

a.

b.

c.

d.

a.

b.

c.

d.

30.

a.

b.

c.

a.

b.

c.

d.

32.

a.

b.

c.

d.

33.

PWM

AM

b.

c.

d.

25.

b.

c.

d.

34.

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a.
tunable cavity
a.
b.
coaxial cavity
b.
{ cos - cos[ + / V ]}
c.
radial cavity
c.
V { cos - cos[ + / V ]}
d.
toraidal cavity
d.
V { cos - cos[ + ]}
35.
Capacitance of gap, Cg is
44.
The transit time for an electron to travel
a.
a distance of L in 2 cavity klystron is
b.
a.
T [1 - V SIN [ - 0.5] / 2 V ]
c.
b.
T [1 + V SIN [ + 0.5qg] / 2 V ]
d.
c.
T [1 - V SIN [ + 0.5qg] / V ]
36.
For coaxial cavity at resonance, tan βl =
d. T [1 - V SIN [ - 0.5qg] V ]
a.
45. If the electrons are accelerated by high
b.
dV / [ a2 ln b/a ]
dc
voltage V0 before entering the buncher
c.
dV / [ ω ln b/a ]
grids,
d.
dV / [ ln b/a ]
their velocity is
37.
Represents shown in figure (a)
a.
0.593 x 10 m/s
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Figure(a)
b.
593 x 10 m/s
a.
radial cavity
c.
5.93 x 10 m/s
b.
coaxial cavity
d.
59.3 x 10 m/s
c.
tunable cavity
46.
is called depth of
d.
toraidal cavity
velocity modulation
38.
Represents shown in figure (a)
a.
βI V1/ V0
Figure(a)
b.
βI V0/ V1
a.
toraidal cavity
c. βI V1 V0
b.
coaxial cavity
d. βI / V1 V0
c.
radial cavity
47.
The minimum velocity (2 cavity klystron)
d.
tunable cavity
in
bunching process is
39.
In a reentrant cavity
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a.
v0 [ 1 - βI V1/ 2 V0 ]
a.
metallic boundaries extend into interior of
b.
v0 [ 1 + βI V1/ 4 V0 ]
cavity
c.
v0 [ 1 - βI /V1 V0 ]
b.
metallic boundaries are not extend into interior
d.
v0 [ 1 + βI V1/ 3 V0 ]
of cavity
48.
The maximum velocity ( 2 cavity
c.
metallic boundaries extend into interior of drift
klystron) in bunching process is
space
a.
v0 [ 1 + βI V1/ 2 V0 ]
d.
metallic boundaries extend into interior of
b.
v0 [ 1 + βI V1/ 4 V0 ]
cathode
c. v0 [ 1 - βI /V1 V0 ]
40. The inductance of radial reentrant cavity,
d. v0 [ 1 + βI V1/ 3 V0 ]
L is
49.
The distance from buncher grid to
a.
location of dense electron bunching ΔL is
b.
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a.
v0 πV0 /ω βI V1
c.
b.
pV0 /w2 βI V1
d.
c.
v0 V0 /w3 βI V1
41.
Capacitance of radial reentrant cavity is
d.
v0 [ 1 + βI V1/ 3 V0 ]
a.
50.
The equivalent mutual conductance of
b.
klystron amplifier is
c.
a.
2 I J (X) / V
d.
b.
V / 2I V
42.
Beam coupling coefficient of input cavity
c. I J (X) / V
gap is
d. 2 I J (X)
a. sin [ /2 ] / [ /2]
51.
The optimum distance L at which the
b.
sin [ /2 ] / qg
maximum fundamental component of
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c.
sin [ /4 ] / [ /4]
current
d.
sin [ /3 ] / [ /3]
occur is ( klystron amplifier)
43.
The average microwave voltage in
a.
3.682 V v /V ω
buncher gap is
b.
3.675 v /V ω
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c.

d.

52.

a.

53.

b.

c.

d.

61.

a.

b.

c.

d.

62.

G R

R

G

c.

d.

54.

a.

55.

b.

c.

d.

63.

a.

b.

c.

d.

64.

a.

d.

56.

a.

b.

57.

c.

d.

58.

a.

b.

59.

c.

d.

60.

a.

4I

65.

a.

b.

c.

d.

66.

a.

b.

67.

a.

b.

c.

d.

68.

in

a.

b.

69.

dc

a.

b.

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c.
60 rad
c.
VKC 8269
d.
20 rad
d.
1N 29
70.
In two cavity klystron amplifier Velocity
78.
The varian CW super power klystron
perturbation is
amplifier VKC 8269 A has output power of _
a.
- C sin( z) sin ( t + θ )
_
b.
B cos( z) cos ( t + θ )
_
at 2.114 GHz.
c.
C cos( z) sin ( t + θ )
a.
500 KW
d.
sin( z) cos ( t + θ )
b.
200 KW
71.
The long life klystron amplifier tube
c.
300 KW
cathode is made of
d. 100 KW
a. porous tungsten impregnated with
79. In two cavity klystron, if I = 0.3565 and
barium, calcium & aluminium oxide.
R
= 30 k ohms then induced voltage
b.
porous tungsten impregnated with copper,
in
output cavity is
calcium & silicon oxide.
a.
10.71KV
c.
porous tungsten impregnated with barium,
b.
5.56KV
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copper & germanium oxide.
c.
1.071KV
d.
porous tungsten impregnated with
d.
107.1KV
strontium,silver & aluminium oxide.
80.
The power output by reflex klystron is
72.
In two cavity klystron amplifier , charge
a.
density is
b.
a.
B cos( z) cos ( t + q )
c.
b. B cos ( t + q )
d.
c. B cos( z)
81. The retarding electric field E in reflex
d. cos( z) cos (q )
klystron is
73.
If /ω is smaller than unity, beam current
a.
density is
b.
a.
V B cos( z - ω t ) cos ( t + θ )
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c.
b.
B cos( z) cos ( t + θ )
d.
c.
cos ( t + θ )
82.
The ac power delivered to load by reflex
d. B cos( z)
klystron is
74.
In klystron amplifier If V = 1000V, X =
a.
1.841, = 0.952 & = 40, then
b.
maximum input voltage is
c.
a. 96.5 V
d.
b. 9.65 V
83. The electronic efficiency of reflex
c. 50 V
klystron oscillator is
d.
60 V
a.
75.
In klystron amplifier If I = 25 mA, J (x)
b.
=
0.582, then I is
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c.
a.
29.1 x 10 A
d.
b.
2.91 x 10 A
84.
In two cavity klystron, if I2 = 0.3565 and
c. 9.1 x 10 A
R
= 30 k ohms then power delivered to
d. 3 x 10 A
load is
76.
In klystron amplifier If = 0.952, I = 29.1
a.
3.82KW
mA, R = 30 K ohms,then
b.
38.2KW
V
is
c.
382KW
a.
831 V
d.
0.382KW
b.
80 V
85. Reflex klystron efficiency is
c.
200 V
a. 20 to 30 %
d.
400 V
b.
20 to 60 %
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77.
is a five cavity
c.
10 to 50 %
klystron amplifier
d.
30 to 70 %
a.
VA 884 D
86.
The bunching parameter of reflex
b.
2K 25
klystron oscillator is
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a.
V /2V
b.
amplification
b.
V V
c.
clipping
c.
V /V
d.
clamping
d.
V /2V
96.
For oscillations in reflex klystron θ ;'0 is
87.
The round trip transit angle referring to
a.
N2π
center of bunch is
b.
n2π
a. 2nπ - π /2
c.
Nnπ
b.
2n pi2 - π /8
d.
n6π
c. 8nπ - pi2 /2
97.
For high average power purpose
d. 4nπ - π /3
are used
88. If n = 2 then maximum electronic
a. coupled cavity TWTs
efficiency is
b.
reflex klystron
a.
22.7 %
c.
2 cavity klystron
b.
30 %
d.
3 cavity klystron
c.
20 %
98.
In TWT the microwave circuit is
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d.
60 %
a.
non resonant
89.
The electronic admittance of reflex
b.
resonant
klystron is
c.
complex
a.
non linear
d.
linear
b.
linear
99.
The wave in TWT is
c.
zero
a.
propagating wave
d.
infinity
b.
non propagating wave
90. Represents shown in figure (a)
c. pulse only
Figure(a)
d. complex
a.
equivalent circuit of reflex klystron
100.
Represents shown in figure (a)
b.
equivalent circuit of klystron amplifier
Figure(a)
c.
equivalent circuit of TWT
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a.
zigzag slow wave structure
d.
equivalent circuit of magnetron
b.
helical slow wave structure
91.
The necessary condition for oscillation in
c.
folded back line slow wave structure
reflex klystron is
d.
inter digital slow wave structure
a.
101.
The efficiency of TWT is
b.
a.
20 to 40 %
c.
b.
10 to 50 %
d.
c.
5 to 40 %
92.
When signal voltage goes to zero the
d. 20 to 70 %
factor 2J1 [X1 ] / X1 approaches
102. The power out put of TWT is
a.
unity
a.
upto 10 KW
b.
zero
b.
20KW
c.
2
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c.
50KW
d.
10
d.
100KW
93.
The electronic admittance is a function of
103.
Represents shown in figure (a)
a.
dc beam admittance & dc transit angle
Figure(a)
b.
dc beam admittance & ac transit angle
a.
folded back line slow wave structure
c.
ac beam admittance & dc transit angle
b.
helical slow wave structure
d.
ac beam admittance & ac transit angle
c.
zigzag slow wave structure
94.
Rectangular plot of electron admittance
d.
inter digital slow wave structure
Ye is
104. Represents shown in figure (a)
a.
spiral
Figure(a)
b.
linear
a. inter digital slow wave structure
c.
circle
b.
helical slow wave structure
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d.
ellipse
c.
folded back line slow wave structure
95.
Any value of for which the spiral lies in
d.
zigzag slow wave structure
the area to the left of line [-G-JB] will give
105.
The interaction of electron beam and rf
a.
oscillations
field in TWT IS
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a.

b.

c.

d.

a.

b.

b.

c.

d.

a.

b.

a.

a.

b.

c.

d.

a.

a.

b.

c.

d.

a.

b.

c.

d.

a.

b.

c.

v

v

v

v

d.

a.

b.

c.

d.

a.

b.

c.

d.

a.

b.

c.

d.

b.

c.

d.

a.

b.

c.

0

a.

b.

c.

d.

by

a.

b.

c.

d.

b.

c.

d.

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the
cathode depends on
132.
IF E/M = 1.759 X 10 & B0 = 0.336
a.
V0 & B0
Wb/m2 then cyclotron angular frequency
b.
e & B0
is
c.
b2 & m
a.
5.91 x 10
d. e & b2
b.
6.91 x 10
124.
For TWT V0 = 3KV, I0 =30mA and Z0 =
c.
8.91 x 10
10 ohms then gain parameter is
d.
5.78 x 10
a. 0.0292
133.
For given V0 is
then the
b. 0.00292
electron will not reach the anode
c. 2.92
a. B0 > B
d. 292
b. B0 < B
125.
For TWT circuit length is 50 & gain
c.
B0 < 100 B
parameter is 0.0292 then output power gain
d.
B0 = B
is
134.
In magnetron there are N reentrant
a.
59.52db
cavities in anode structure the phase shift
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b.
49.53db
between two adjacent cavities is
c.
70 db
a.
2nπ /N
d. 40.87db
b.
2nπ /7N
126.
For TWT I IS
c.
2nπ N
a.
d.
7nπ /N
b. KV
135.
The unloaded quality factor of
c. KV
resonator of slow wave structure is
d. KV
a. C /G
127. For TWT P IS
b. C /L G
a.
c.
CL /G
b.
KV
d.
C LG
c.
KV
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136.
The external quality factor of load
d.
KV
circuit in resonator of slow wave structure is
128.
The over all efficiency of coupled cavity
a.
C /G
TWT IS
b.
C /G
a.
20 to 55 %
c.
CL /G
b. 20 to 69 %
d.
C L /G
c. 10 to 80 %
137.
The loaded quality factor of resonant
d. 30 to 70 %
circuit is
129. For given B0 if
then the
a. C / [G +G ]
electron will not reach the anode
b. CL / [G +G ]
a.
V0 < V
c.
C / [G +LG ]
b.
V0 > V
d.
CL / [G L+G ]
c.
V0 = V
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138.
The maximum circuit efficiency is
d.
V0 > 10 V
obtained when magnetron is
130.
IF E/M = 1.759 X 10 , B0 = 0.336
a.
heavily loaded
Wb/m2 , a = 5 cm, b= 10 cm then cutoff
b.
lightly loaded
voltage is
c.
GL Gr
a.
139.5KV
d.
GL = Gr
b.
156.9KV
139.
For traveling wave high power
c.
149.34KV
magnetron peak power output is
d.
178.98KV
a. 40MW
131. IF E/M = 1.759 X 10 , a = 5 cm, b= 10
b. 100MW
cm V0 = 26KV then cutoff magnetic
c. 40KW
flux density is
d.
70KW
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a.
14.495 mwb/m2
140.
For n type GaAs, lower valley effective
b.
1.4495 mwb/m2
mass is
c.
14.95 mwb/m2
a.
0.068
d.
1.495 mwb/m2
b.
0.68
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c.

d.

a.

c.

d.

a.

b.

a.

b.

c.

d.

a.

b.

c.

a.

b.

a.

b.

c.

d.

a.

b.

c.

1.2

2

Si

100

d.

a.

b.

c.

d.

b.

c.

d.

is

a.

b.

c.

d.

b.

c.

d.

is

a.

b.

c.

d.

b.

c.

d.

a.

1.9

2.5

b.

c.

d.

b.

c.

d.

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a.

b.

c.

d.

a.

b.

c.

d.

a.

b.

c.

d.

a.

b.

c.

d.

a.

b.

c.

d.

a.

b.

c.

d.

c.

d.

a.

b.

c.

d.

a.

d.

a.

b.

c.

d.

a.

b.

c.

d.

b.

c.

d.

a.

b.

c.

d.

c.

d.

a.

b.

a.

b.

c.

d.

a.

b.

c.

d.

a.

b.

c.

d.

c.

d.

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a.

b.

c.

d.

b.

c.

d.

a.

b.

c.

d.

a.

c.

d.

a.

b.

c.

d.

b.

c.

d.

as

a.

b.

c.

d.

a.

b.

c.

a.

b.

c.

d.

a.

b.

c.

d.

b.

c.

d.

a.

b.

c.