AO4421

60V P-Channel MOSFET

General Description

Product Summary

The AO4421 combines advanced trench MOSFET

technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load switch
and battery protection applications.

ID (at VGS=-10V)

-60V
-6.2A

RDS(ON) (at VGS=-10V)

< 40m

RDS(ON) (at VGS = -4.5V)

< 50m

VDS

100% UIS Tested

100% Rg Tested

SO8

Top View
D
D

Bottom View

D
D
G
G
S

S
S
S

Absolute Maximum Ratings TA=25C unless otherwise noted

Symbol
Parameter
Drain-Source Voltage
VDS
Gate-Source Voltage

VGS
TA=25C

Continuous Drain
Current A
Pulsed Drain Current

TA=70C
B

Junction and Storage Temperature Range

Maximum Junction-to-Lead

Rev 3: Nov 2010

20

ID

-5

IDM

-40

3.1

PD

TA=70C

Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A

Units
V

-6.2

TA=25C
Power Dissipation A

Maximum
-60

TJ, TSTG

-55 to 150

Symbol
t 10s
Steady-State
Steady-State

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RJA
RJL

Typ
24
54
21

Max
40
75
30

Units
C/W
C/W
C/W

Page 1 of 4

Electrical Characteristics (TJ=25C unless otherwise noted)

Symbol

Parameter

STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS

Zero Gate Voltage Drain Current

IGSS

Gate-Body leakage current

Conditions

Min

ID=-250A, VGS=0V

-60
-5

VDS=0V, VGS=20V

100

Gate Threshold Voltage

VDS=VGS ID=-250A

-1

On state drain current

VGS=-10V, VDS=-5V

-40

VGS=-10V, ID=-6.2A

70

VGS=-4.5V, ID=-5A

40

50

VDS=-5V, ID=-6.2A

18

Forward Transconductance

VSD

Diode Forward Voltage

IS=-1A,VGS=0V

IS

Maximum Body-Diode Continuous Current

TJ=125C

DYNAMIC PARAMETERS
Ciss
Input Capacitance

Rg

Gate resistance

-0.74

2417
VGS=0V, VDS=-30V, f=1MHz

nA
V

m
m
S

-1

-4.2

2900

pF

179

pF

120
VGS=0V, VDS=0V, f=1MHz

A
53

gFS

Output Capacitance

-3
40

Static Drain-Source On-Resistance

Reverse Transfer Capacitance

-2
32

RDS(ON)

Units

-1
TJ=55C

VGS(th)

Crss

Max

VDS=-48V, VGS=0V

ID(ON)

Coss

Typ

pF

1.9

2.3

SWITCHING PARAMETERS
Qg(10V) Total Gate Charge (10V)

46.5

55

Qg(4.5V) Total Gate Charge (4.5V)

22.7

nC

9.1

nC

Qgs

Gate Source Charge

VGS=-10V, VDS=-30V, ID=-6.2A

nC

Qgd

Gate Drain Charge

9.2

nC

tD(on)

Turn-On DelayTime

9.8

ns

tr

Turn-On Rise Time

6.1

ns

VGS=-10V, VDS=-30V, RL=4.7,

RGEN=3

tD(off)

Turn-Off DelayTime

tf

Turn-Off Fall Time

44

ns

12.7

ns

trr

Body Diode Reverse Recovery Time

IF=-6.2A, dI/dt=100A/s

34

Qrr

Body Diode Reverse Recovery Charge IF=-6.2A, dI/dt=100A/s

47

42

ns
nC

A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C.
The value in any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal
resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The
SOA curve provides a single pulse rating.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE

Rev 3: Nov 2010

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Page 2 of 4

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL

30

25
-10V

-4V
-4.5V

20

-5V

-3.5V

-6V

20

15
-ID(A)

-ID (A)

VDS=-5V

25

15

10
10

125C

VGS=-3V

5
25C

0
0

1.5

45
Normalized On-Resistance

RDS(ON) (m )

2.5

3.5

2.00
VGS=-4.5V

40

35
VGS=-10V

VGS=-10V
ID=-6.2A

1.80
1.60

VGS=-4.5V
ID=-5A

1.40
1.20
1.00
0.80

30
0

10
15
20
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage

100

25

50

75

100

125

150

175

Temperature (C)
Figure 4: On-Resistance vs. Junction
Temperature
1.0E+01

90

1.0E+00

ID=-6.2A

125C

80

1.0E-01

70

125C

-IS (A)

RDS(ON) (m )

-VGS(Volts)
Figure 2: Transfer Characteristics

-VDS (Volts)
Fig 1: On-Region Characteristics

60

1.0E-02
1.0E-03

50
1.0E-04
25C

40
1.0E-05
25C

30

1.0E-06
20
2

3
4
5 -VGS
6 (Volts)
7
8
9
10
Figure 5: On-Resistance vs. Gate-Source Voltage

Rev 3: Nov 2010

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0.0

0.2

0.4

0.6

0.8

1.0

-VSD (Volts)
Figure 6: Body-Diode Characteristics

Page 3 of 4

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL

3500

10
VDS=-30V
ID=-6.2A

3000
Capacitance (pF)

-VGS (Volts)

Ciss

2500
2000
1500
1000

Coss

Crss

500
0

0
0

10

20

30

40

50

-Qg (nC)
Figure 7: Gate-Charge Characteristics

40

50

60

100

1000

TJ(Max)=150C
TA=25C

RDS(ON)
limited

100s
1ms
0.1s

10s

30
Power (W)

-ID (Amps)

30

40

TJ(Max)=150C, T A=25C

1.0

20

-VDS (Volts)
Figure 8: Capacitance Characteristics

100.0

10.0

10

10ms

1s

20

10
10s
DC
0

0.1
0.1

10

100

0.001

0.01

0.1

10

Pulse Width (s)

Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)

-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)

Z JA Normalized Transient
Thermal Resistance

10
D=Ton/T
TJ,PK=TA+PDM.ZJA.RJA
RJA=40C/W

In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

PD

0.1

Ton

Single Pulse
0.01
0.00001

Rev 3: Nov 2010

0.0001

0.001

0.01

0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance

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100

1000

Page 4 of 4