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EE 230
MOSFETs 1
e
gat e
d
oxi
in
dra
rc
u
o
s
EE 230
MOSFETs 2
Critical dimensions
e
gat e
d
oxi
wid
(L
h
t
g
len
th (
W)
rce
u
o
s
in
dra
width: typical L to 10 L
(W/L ratio is important)
EE 230
MOSFETs 3
gate
source
drain
If VDS > 0, the diode at the drain end will be reverse-biased, preventing
current flow.
Reversing the polarity doesnt help, because then the other junction
will be reverse biased.
EE 230
MOSFETs 4
body
substrate (body)
Define oxide
capacitance
units:
EE 230
F/m2 (or
F/m2)
gate
body
P-type semiconductor
the carriers are mostly
holes, but there are few
electron lurking around.
+
+ +
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
+
vGB < 0
+
body
gate
+ + + ++ + + ++ +
+ +
+ +
+ + + + +
+
substrate (body)
MOSFETs 6
vGB > 0
gate
body
+
+
+
+
+
+
+
+
+
+
+
+ + + +
+
substrate (body)
EE 230
MOSFETs 7
vGB > VT
+
gate
body
+
+
+
+
+
+ ++ +
+
++
substrate (body)
MOSFETs 8
vOV = vGB VT
gate
substrate (body)
This gives just enough electrons so that the region under the gate begins
to act like it is n-type. A detailed physical description is beyond our
capabilities now. (See EE 332 and beyond.) But we can get a good
approximation by using the fact that the MOS structure is basically a
capacitor. Once the gate voltage is bigger than the threshold, electrons
pile up under gate just like charge on a plate of a capacitor.
Qinv = Cgate vov = Cgate (vGB
Qinv
= Cox (vGB
A
EE 230
Vt ) = qns
Vt )
vOV = vGB VT
gate
substrate (body)
EE 230
EE 230
vGB < 0
hole accumulation
carrier depletion
inversion
electron layer forms,
qns = Cox(vGB VT)
MOSFETs 11
vGS > VT
body
n
source
gate
n
drain
For now, we connect the source to the body (call this ground) and
apply the controlling voltage between the gate and the source. This is
OK for the time being, but we will have to revisit the issue of the body
connection later. With the drain also at ground, the inversion layer
(channel) is uniform between source and drain.
EE 230
MOSFETs 12
Drain current
With the inversion layer in place, we can apply a positive voltage
between the drain and source. This creates an electric field that will
push electrons from the source through the inversion layer channel to
the drain. The moving electrons represent a drain current flowing from
drain to source.
vDS > 0
+
vGS > VT
body
n
source
gate
EE 230
n
drain
iD
MOSFETs 13
vDS > 0
vGS > VT
body
n
source
gate
n
drain
iD
The total resistance is the sum the resistances of the three regions: RDS
= Rsource + Rinversion + Rdrain. Usually, the source and drain are very
heavily doped (lots of electrons) and so the resistances there are small.
Most of the resistance is associated with the inversion layer: RDS
Rinversion.
EE 230
MOSFETs 14
where ninv is the electron concentration (m3) in the inversion layer, tinv
is the thickness of the inversion layer, n is the electron mobility, q is
the charge on one electron and L and W are the gate length and width.
=
)
MOSFETs 15
MOSFETs 16
vS (=0)
n
source
+
vGS
vD
+
vGD
n
drain
MOSFETs 17
vG
gate
vS (=0)
n
source
+
vGS
vD
+
vGD
n
drain
MOSFETs 18
VGS > VT
VGS
gate
VDS > 0
VGD
n
source
n
electron concentration decreases
at drain end
drain
ID
VDS
MOSFETs 19
So a more correct analysis of the current flow shows that the iD-vDS
relationship is not linear, but parabolic. (See EE 332.)
=
Study exercise: Show that this reduces to the linear equation for small
values of vDS.
Notation: To save on ink and time, define the constant in front as:
=
The units of this MOS current parameter are A/V2. Or more typically
mA/V2. (Check it.)
Note: This use of K is not standard. Different textbooks will handle the
current parameter differently.
EE 230
MOSFETs 20
current saturation
VGS > VT
VGS
gate
VDS > 0
VGD < VT
source
drain
electron layer is "pinched down"
The usual terminology is to say that the channel is pinched off at the
drain end, but this is slightly misleading. If the channel were truly
pinched off, then the electron concentration would go to zero there
and the current would necessarily have to go to zero, also.
Instead, it might be better to say that the channel is pinched down.
The electron concentration goes to some minimum value, but never
really shuts off. In effect, the flowing current works to hold the
channel open, even though the drain voltage seems high enough to
truly pinch off the channel.
EE 230
MOSFETs 21
)=
] =
MOSFETs 22
5
5
V =5V
GS
V =5V
3
3
GS
D
D
I (mA)
I (mA)
4
4
2
2
V =4V
GS
V =4V
GS
V =3V
GS
V =3V
1
1
GS
0
00
0
1
1
2
2
3
3
4
4
5
5
6
6
7
7
8
8
V (V)
DS
V (V)
DS
EE 230
MOSFETs 23
Another useful plot is iD vs. vGS, with vDS fixed. If vDS is kept large so
that the NMOS does not go into the ohmic region, the curve is
essentially a plot of the saturation equation.
2.5
(mA)
1.5
NMOS in
saturation
1/2
(I )
I (mA)
NMOS in
saturation
V
1
1/2
0.5
NMOS off
0
GS
(V)
NMOS off
0
GS
(V)
MOSFETs 24
off
vGS VT
on
iD = 0
vDS < vGS VT
ohmic or linear
vDS vGS VT
=
saturation
]
MOSFETs 25