Philips Semiconductors

Product specification

Triacs
logic level
GENERAL DESCRIPTION
Passivated, sensitive gate triac in a
plastic envelope, intended for use in
general purpose bidirectional switching
and phase control applications. This
device is intended to be interfaced
directly to microcontrollers, logic
integrated circuits and other low power
gate trigger circuits.

PINNING - TO220AB
PIN

DESCRIPTION

main terminal 1

main terminal 2

gate

BT137-600D

QUICK REFERENCE DATA

SYMBOL

PARAMETER

MAX.

UNIT

VDRM
IT(RMS)
ITSM

BT137Repetitive peak off-state voltages

RMS on-state current
Non-repetitive peak on-state current

600D
600
8
65

V
A
A

PIN CONFIGURATION

SYMBOL

tab

T2

tab

T1

1 23

main terminal 2

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL

PARAMETER

VDRM

Repetitive peak off-state

voltages

IT(RMS)
ITSM

RMS on-state current

Non-repetitive peak
on-state current

I2t
dIT/dt

IGM
VGM
PGM
PG(AV)
Tstg
Tj

I2t for fusing

Repetitive rate of rise of
on-state current after
triggering

Peak gate current

Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature

CONDITIONS

MIN.

full sine wave; Tmb 102 C

full sine wave; Tj = 25 C prior to
surge
t = 20 ms
t = 16.7 ms
t = 10 ms
ITM = 12 A; IG = 0.2 A;
dIG/dt = 0.2 A/s
T2+ G+
T2+ GT2- GT2- G+

over any 20 ms period

MAX.

UNIT

600

65
71
21

A
A
A2s

-40
-

50
50
50
10
2
5
5
0.5
150
125

A/s
A/s
A/s
A/s
A
V
W
W
C
C

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 6 A/s.
June 2001

Rev 1.000

Philips Semiconductors

Product specification

Triacs
logic level

BT137-600D

THERMAL RESISTANCES
SYMBOL

PARAMETER

Rth j-mb

Thermal resistance
full cycle
junction to mounting base half cycle
Thermal resistance
in free air
junction to ambient

Rth j-a

CONDITIONS

MIN.

TYP.

MAX.

UNIT

60

2.0
2.4
-

K/W
K/W
K/W

MIN.

TYP.

MAX.

UNIT

T2+ G+
T2+ GT2- GT2- G+

2.5
3.5
3.5
6.5

5
5
5
10

mA
mA
mA
mA

T2+ G+
T2+ GT2- GT2- G+

VD = 12 V; IGT = 0.1 A
IT = 10 A
VD = 12 V; IT = 0.1 A
VD = 400 V; IT = 0.1 A; Tj = 125 C
VD = VDRM(max); Tj = 125 C

0.25
-

1.6
8.5
1.2
2.5
1.5
1.3
0.7
0.4
0.1

15
20
15
20
10
1.65
1.5
0.5

mA
mA
mA
mA
mA
V
V
V
mA

MIN.

TYP.

MAX.

UNIT

V/s

STATIC CHARACTERISTICS
Tj = 25 C unless otherwise stated
SYMBOL

PARAMETER

CONDITIONS

IGT

Gate trigger current

VD = 12 V; IT = 0.1 A

IL

Latching current

IH
VT
VGT

Holding current
On-state voltage
Gate trigger voltage

ID

Off-state leakage current

VD = 12 V; IGT = 0.1 A

DYNAMIC CHARACTERISTICS
Tj = 25 C unless otherwise stated
SYMBOL

PARAMETER

CONDITIONS

dVD/dt

Critical rate of rise of

off-state voltage
Gate controlled turn-on
time

VDM = 67% VDRM(max); Tj = 125 C;

exponential waveform; RGK = 1 k
ITM = 12 A; VD = VDRM(max); IG = 0.1 A;
dIG/dt = 5 A/s

tgt

June 2001

Rev 1.000

Philips Semiconductors

Product specification

Triacs
logic level

12

BT137-600D

Tmb(max) / C
101
= 180

Ptot / W

120

10

10

105

102 C

109

60

30

BT137

90

IT(RMS) / A

113

4
4

117

121

4
6
IT(RMS) / A

125
10

0
-50

Fig.1. Maximum on-state dissipation, Ptot, versus rms

on-state current, IT(RMS), where = conduction angle.

1000

50
Tmb / C

100

150

Fig.4. Maximum permissible rms current IT(RMS) ,

versus mounting base temperature Tmb.

ITSM / A
IT

I TSM

25

time

20

IT(RMS) / A

Tj initial = 25 C max

15
100
dI T /dt limit

10

T2- G+ quadrant

10
10us

100us

1ms
T/s

10ms

0
0.01

100ms

Fig.2. Maximum permissible non-repetitive peak

on-state current ITSM, versus pulse width tp, for
sinusoidal currents, tp 20ms.

80

60
50

1.6

ITSM

IT
T

10

Fig.5. Maximum permissible repetitive rms on-state

current IT(RMS), versus surge duration, for sinusoidal
currents, f = 50 Hz; Tmb 102C.

ITSM / A

70

0.1
1
surge duration / s

VGT(Tj)
VGT(25 C)

1.4

time

Tj initial = 25 C max

1.2

40

30

0.8
20

0.6

10

0
1

10
100
Number of cycles at 50Hz

0.4
-50

1000

Fig.3. Maximum permissible non-repetitive peak

on-state current ITSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.

June 2001

50
Tj / C

100

150

Fig.6. Normalised gate trigger voltage

VGT(Tj)/ VGT(25C), versus junction temperature Tj.

Rev 1.000

Philips Semiconductors

Product specification

Triacs
logic level

BT137-600D

IGT(Tj)
IGT(25 C)

25

Tj = 125 C
Tj = 25 C

T2+ G+
T2+ GT2- GT2- G+

2.5

IT / A

max

typ

20

Vo = 1.264 V
Rs = 0.0378 Ohms

15

1.5
10

1
5

0.5
0
-50

50
Tj / C

100

150

0.5

1.5
VT / V

2.5

Fig.10. Typical and maximum on-state characteristic.

Fig.7. Normalised gate trigger current

IGT(Tj)/ IGT(25C), versus junction temperature Tj.

IL(Tj)
IL(25 C)

10

Zth j-mb (K/W)

2.5

unidirectional
1

bidirectional

2
1.5
0.1

P
D

tp

0.5
0
-50

50
Tj / C

100

0.01
10us

150

1ms

10ms

0.1s

1s

10s

tp / s

Fig.11. Transient thermal impedance Zth j-mb, versus

pulse width tp.

Fig.8. Normalised latching current IL(Tj)/ IL(25C),

versus junction temperature Tj.

0.1ms

IH(Tj)
IH(25C)

1000

dVD/dt (V/us)

2.5
100

2
1.5

10

1
0.5
0
-50

50
Tj / C

100

150

50

100

150

Tj / C

Fig.9. Normalised holding current IH(Tj)/ IH(25C),

versus junction temperature Tj.

June 2001

Fig.12. Typical, critical rate of rise of off-state voltage,

dVD/dt versus junction temperature Tj.

Rev 1.000

Philips Semiconductors

Product specification

Triacs
logic level

BT137-600D

MECHANICAL DATA
Dimensions in mm

4,5
max

Net Mass: 2 g

10,3
max
1,3

3,7
2,8

5,9
min

15,8
max

3,0 max
not tinned

3,0

13,5
min
1,3
max 1 2 3
(2x)

0,9 max (3x)

2,54 2,54

0,6
2,4

Fig.13. SOT78 (TO220AB). pin 2 connected to mounting base.

Notes
1. Refer to mounting instructions for SOT78 (TO220) envelopes.
2. Epoxy meets UL94 V0 at 1/8".

June 2001

Rev 1.000

Philips Semiconductors

Product specification

Triacs
logic level

BT137-600D

DEFINITIONS
DATA SHEET STATUS
DATA SHEET
STATUS2

PRODUCT
STATUS3

DEFINITIONS

Objective data

Development

This data sheet contains data from the objective specification for
product development. Philips Semiconductors reserves the right to
change the specification in any manner without notice

Preliminary data

Qualification

This data sheet contains data from the preliminary specification.

Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in ordere to improve the design and supply the best possible
product

Product data

Production

This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in
order to improve the design, manufacturing and supply. Changes will
be communicated according to the Customer Product/Process
Change Notification (CPCN) procedure SNW-SQ-650A

Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 2001
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

2 Please consult the most recently issued datasheet before initiating or completing a design.
3 The product status of the device(s) described in this datasheet may have changed since this datasheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
June 2001

Rev 1.000