P E1 probability to have an electron in the state

characterise by energy E1 (to have an electron on the

level of energy E1)

1 P E1 is the probability to have not an electron in this state (on this energy level)

P E1 P E2 1 P E3 1 P E4 this product is the probability to have E1 and E2 states filled with

electrons and E3 and E4 states empty of electrons;

1 P E1 1 P E2 P E3 P E4

The complementary situation has this realisation probability. Both

probability must be equal.

The principle of energy conservation said us than

1
1
P E3

1
1
1
P E4
P E1

only the function

A exp( E)

E1 E 2 E3 E 4

1
1
P E2

can fulfil this equality, where 1 /

kT and A exp( EF / kT)

in conclusion the probability to have an electron in the state characterise by energy E is :

fe E

1
1 e

E EF
kT

and the probability to have an empty state is :

f p E 1 fe E

1
1 e

EF E
kT

The function f is known as the Fermi-Dirac distribution

At T=0 K, the shape of this function is like the shape of a stage function (see dotted line) ;
At T 0 0 K , for E EF , the probability to have an electron on this state is 1/2. The shape of
Fermi-Dirac distribution to this temperature is plotted by uninterrupted line.
The state characterised by E EF is known as Fermi level and repressed an virtual energy level
characteristically for any solid state material.
That means than on this level dont exist electrons.

Next problem, in solid state physics, is to obtain the formula for density of such energy states (the
number of energy levels in the unity volume).
For that we must work in the space of impulses
The quantum mechanics said us than in a stationary state, an electron can be described by a stationary
wave function. Phenomenological, that means than in a material with the lengths L , can exist only
electrons which have the wave lengths which respect next formula

Ln

, where n is an positive integer, and this formula must be valuable on all three directions (x, y,

z). But the wave length depends of the impulse by de Broglie formula

h
. In consequece we have
p

next relations between impuls (on a direction of space) and the length of material (sistem)
2

px

nh
n xh
nh
; p y y ; pz z
2L
2L
2L

and for the unity cell in the space of impulses (

nx ny nz 1), with the volume

have 2 electrons (Paulis Principle).

2
L

, we can

In consequece, the density of electrons in the unity cell

is

2
h

2L

2L

In this case we can compute which is the number of electrons which have the impulse lying between p
and p+dp
2L

dn p , p dp d dV 2

1
4p 2 dp
8

from

this formula we can find the density of

electronically states which have the impulse
lying between p and p+dp

2
dn p , p dp 8p 2 dp
p
, but Ek
, and we will transform this formula in the density of
N p dp

L3
h3
2m
electronically states which have the energy lying between E and E+dE
3/ 2
4

2mn* Ek1 / 2 (m*n is the effective mass of the electron)

3
h
a similar formula we can find for holes (the density of unfilled electronically states which have the
energy lying between E and E+dE

N Ek

3/ 2
4

2m*p Ek1 / 2 (m*p is the effective mass of the hole)

3
h
for electrons Ek E Ec and for holes Ek E v E ; Now we can compute the density of charge
carriers in CB or in VB:

N p Ek

ne n

EC

4 2mn*
n=
h3
Ec

Ev

p=

3/ 2

4 2m*p

1 e

1
1 e

EV

f p ( E ) N p ( E )dE

dE and for holes next similar formula

E EF
kT

Ev E 1 / 2

h3

E Ec 1 / 2

3/ 2

np p

or, for holes,

f e ( E ) N ( E ) dE

EF E
kT

dE

For computing such integrals we must make an approximation, which is allowed by the physical
conditions. At room temperature, T=300oK, the index of exponential from the denominator of FermiDirac distribution is very high, and in this situation we can neglect the factor 1 from this denominator.
In this situation the Fermi-Dirac distribution become:

fe E

1 e

E EF
kT

E EF
kT

and for holes become f p E

1 e

EF E
kT

EF E
kT

Now we can make the next mathematical trick

E EF Ec Ec
kT

Ec EF
kT

E Ec
kT

, where the first term is a constant for the semiconductor

material, than can be put out of the integral. Finally the expression for density of electrons in conduction
band is

4 2mn*
n=
h3

3/ 2

Ec EF
kT

1/ 2
E Ec e

E Ec
kT

dE

Ec

and for holes we will find a similar expression

p=

4 2m*p

3/ 2

h3

EF Ev Ev
kT

1/ 2
Ev E e

Ev E
kT

dE

now in both integrals we must change the variable in this way

x2

E Ec
kT

4 2mn*
n=
h3

or x2

3/ 2

Ec E F
kT

Ev E
kT

kT 3 / 2

, than the expression for electrons density become

2

2 x 2 e x dx

respectively the expression for holes density become

p=

4 2m*p
h

3/ 2

E F Ev
kT

kT

3/ 2

2 x 2 e x dx

Now both integrals can be compute by the method of parts

2 x
x
2 x e dx xe
2

x2

dx

e x dx
2

because the last integral is half of Poisson integral

Now we have the final expression for both density of charge carriers

2 2mn*kT
n
h3

3/ 2

Ec EF
kT

NCe

Ec E F
kT

respective

2 2m*p kT
h3

3/ 2

E F Ev
kT

NV e

EF Ev
kT

The constants Nc and Nv are so called density of energy states in C.B., respectively in V.B.

NC NV

becouse m*n m*p