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Fall 2011
Exam 3
Name: ___________________________
Score__________/94___
Write down one phrase/sentence that describes the purpose of the diodes and constant
current source in the amplifier below.
2.
3.
Answer:
4.
Consider a frequency
?
Consider a frequency
?
in
6.
7.
of a BJT biased at
?
is inversely-proportional to
.
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= 1 mA is100K. What is
) so that
will be
smaller at
8.
9.
True or false: if class-A amplifiers are not carefully biased, they will suffer from
crossover distortion.
Answer: False
10.
11.
, so that
, so that
12.
In the circuit below, what is the maximum current that can flow through
reasonable assumptions. (2 points)
through ) is
13.
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? Make
Consider the current mirror below, and neglect base currents. What is
? (2 points)
Answer:
14.
? (2 points)
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. (2 points)
(a)
(b)
(c)
(d) Need additional information
Answer: (b)
16. A BJT has rated power of 115 W at
and maximum allowable junction
temperature
. It is mounted on a heat sink with
. It is
dissipating 5 W at an ambient temperature
. What is the temperature of the
heat sink? (2 points)
(a) Need additional information
(b)
(c)
(d)
Answer: 5 W through the heat sink will elevate the sinks temperature by
=
above the ambient, so the answer is (c).
17.
Estimate
assuming
and
. (2 points)
(a)
(b)
(c)
(d)
(e) Need additional information
Answer: Using BJT scaling the resistance looking into the transistors base is about
and assuming
and
this about 7.3K. This is in parallel with
the 82K and 22K resistors, so (d) is the correct answer.
18.
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. What is the
An alternate calculation is
) )
Answer: (d)
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(a)
(b)
(c)
(d)
Answer:
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Solution
Replace the base bias network with its Thevenin equivalent network as shown below. For a Si
transistor,
.
Now
However,
so that
(
(
( )
Solving yields
)( )(
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Solution
(
)
(
)
Note that
. Turn off the input voltage
BJT scaling to determine the resistance looking back into the emitter:
(
sees
)(
) (
(
)(
and use
Using BJT scaling, the resistance looking into the base at midband frequencies is
(
The parallel combination of and
input. Since this is a CC amplifier,
)(
)(
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)
(
(3 points)
Now we can determine the maximum allowable power dissipation when the BJT is mounted on a
heat skink with the given parameters. A thermal model for the problem is shown below.
(
(
)
)
(9 points)
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Question 5 Consider the circuit below. The duty cycle and frequency of the 555 astable is 60%
and 10 kHz respectively.
10
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Question 6 In the following circuit, the three transistors are matched and in the same thermal
environment. Determine the values for
and
to produce an output current of 0.4 mA. You
may ignore base currents and make reasonable assumptions about VBE. (6 points)
Solution
The voltage across the diode-strapped transistors is
and we ignore base currents, so the
voltage drop across the base-emitter of the output transistor is
, and the voltage drop across
is
. Assume VBE = 0.7 V, so that
(
and
11
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. Determine
, and estimate
is large,
and
. Then
.
Using BJT scaling:
and
(
This is an Emitter Follower, so
12
)(
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Part (a) The transistor will dissipate the maximum power (25 W) when
13
.
)(
)(
.
.
)