00ns
.MODEL DI_1N5711W D ( IS=315n RS=2.80 BV=70.0 IBV=10.0u
+ CJO=2.00p M=0.333 N=2.03 TT=1.44n )
Diodes Inc. -
Diodes Inc.
Diodes Inc. Sc
Diodes Inc. Sc
Diodes Inc. Sc
*SRC=BAS70;DI_BAS70;Diodes;Si; 70.0V 70.0mA 5.00ns Diodes Inc. .MODEL DI_BAS70 D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u
+ CJO=2.00p M=0.333 N=1.70 TT=7.20n )
*SRC=BAS70-04;DI_BAS70-04;Diodes;Si; 70.0V 70.0mA 5.00ns
ky diode, dual, one node of two
.MODEL DI_BAS70-04 D ( IS=99.5p RS=0.600 BV=70.0 IBV=10.0u
+ CJO=2.00p M=0.333 N=1.70 TT=7.20n )
Diodes Inc. Sc
Diodes Inc. Sc
Diodes Inc. Sc
Diodes Inc
Diode
.MODEL DI_BAT43WS D ( IS=87.5u RS=18.1m BV=30.0 IBV=500n
+ CJO=8.88p M=0.333 N=3.51 TT=7.20n )
*SRC=BAT46W;DI_BAT46W;Diodes;Si; 100V 0.150A 5.00ns Diodes Inc. Schottky
.MODEL DI_BAT46W D ( IS=603n RS=0.280 BV=100 IBV=5.00u
+ CJO=7.96p M=0.333 N=1.70 TT=7.20n )
*SRC=BAT54;DI_BAT54;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky
.MODEL DI_BAT54 D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u
+ CJO=13.3p M=0.333 N=2.28 TT=7.20n )
*SRC=BAT54A;DI_BAT54A;Diodes;Si; 30.0V 0.200A 5.00ns Diodes Inc. Schottky d
iode, dual, one node of two
.MODEL DI_BAT54A D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u
+ CJO=13.3p M=0.333 N=2.28 TT=7.20n )
*SRC=BAT54ADW;DI_BAT54ADW;Diodes;Si; 30.0V 0.200A 5.00ns
ky diode, quad, one node of four
.MODEL DI_BAT54ADW D ( IS=34.9u RS=0.210 BV=30.0 IBV=2.00u
+ CJO=13.3p M=0.333 N=2.28 TT=7.20n )
********************************************************************************
***********************************************************
*SRC=QSBT40;DI_QSBT40;Diodes;Si; 30.0V 0.200A 50.0ns Diodes Inc. Schottky B
us - Single Device of Multiple
.MODEL DI_QSBT40 D ( IS=500n RS=0.211 BV=30.0 IBV=2.00u
+ CJO=10.0p M=0.333 N=1.70 TT=72.0n )
********************************************************************************
***********************************************************
*SRC=SD101A;DI_SD101A;Diodes;Si; 60.0V 15.0mA 1.00ns
.MODEL DI_SD101A D ( IS=1.82u RS=2.80 BV=60.0 IBV=200n
+ CJO=2.65p M=0.333 N=1.70 TT=1.44n )
Diodes Inc.
Diodes Inc.
Diodes Inc. Sc
Diodes Inc. Sc
Diodes Inc.
Diodes Inc. Sc
Diodes Inc.
Diodes Inc. Sc
Diodes Inc.
Diodes Inc. Sc
Diodes Inc. Sc
Diodes Inc. Sc
Diodes Inc. Sc
*
*Zetex ZHCS350 Spice Model v1.0 Last revision 26/04/2005
*
.MODEL ZHCS350 D IS=1.35e-7 N=1.06 ISR=6e-7 NR=1.1 RS=0.9
+IKF=0.2 BV=65 TRS1=6.5e-3 XTI=2 EG=0.63 Fc=0.5 CJO=18.84e-12
+M=0.5 VJ=0.33 TT=1.6e-9
*
*$
*
*
(c) 2005 Zetex Semiconductors plc
*
* The copyright in these models and the designs embodied belong
* to Zetex Semiconductors plc (" Zetex "). They are supplied
*
*
*
*
*
*
*
*
*
*
*
*Zetex ZHCS400 Spice Model v1.0 Last Revised 22/05/02
*
.MODEL ZHCS400 D IS=9.1e-8 N=.59 RS=250e-3 IKF=1.37e-3 XTI=2
+EG=.58 CJO=101p M=.5231 VJ=.3905 Fc=.5 BV=60 IBV=100E-6
+ISR=2.2E-6 NR=1.8
*
*$
*
*
(c) 2005 Zetex Semiconductors plc
*
* The copyright in these models and the designs embodied belong
* to Zetex Semiconductors plc (" Zetex "). They are supplied
* free of charge by Zetex for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Zetex PLC, its distributors
* or agents.
*
* Zetex Semiconductors plc, Zetex Technology Park, Chadderton,
* Oldham, United Kingdom, OL9 9LL
*
*Zetex ZLLS350 Spice Model v2.0 Last revision 24/05/2007
*
*This simple model has limitations with respect to temperature
*best fit of forward characteristitics with temperature EG=0.63
*best fit of reverse characteristitics with temperature EG=0.85
*
.MODEL ZLLS350 D IS=14E-8 N=1.03 ISR=9E-8 NR=2 IKF=0.043 BV=56 IBV=1E-4
+RS=1.2 TT=1e-9 CJO=13.5E-12 VJ=0.6 M=0.33 EG=0.63 XTI=2 TRS1=4E-3
*
*$
*
*
(c) 2007 Zetex Semiconductors plc
*
* The copyright in these models and the designs embodied belong
* to Zetex Semiconductors plc (" Zetex "). They are supplied
* free of charge by Zetex for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Zetex PLC, its distributors
* or agents.
*
* Zetex Semiconductors plc, Zetex Technology Park, Chadderton,
Diodes Inc.
Diodes Inc.
Diodes Inc.
Diodes Inc.
Diodes Inc.
DZ 3 1 DR
VZ 2 3 10.9
.MODEL DF D ( IS=34.3p RS=0.620 N=1.10
+ CJO=94.2p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=6.87f RS=0.550 N=1.49 )
.ENDS
*SRC=1N4743A;DI_1N4743A;Diodes;Zener 10V-50V; 13.0V 1.00W
Zener
*SYM=HZEN
.SUBCKT DI_1N4743A 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 11.8
.MODEL DF D ( IS=31.7p RS=0.620 N=1.10
+ CJO=88.1p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=6.34f RS=0.630 N=1.55 )
.ENDS
Diodes Inc.
Diodes Inc.
Diodes Inc.
Diodes Inc.
Diodes Inc.
Zener
*SYM=HZEN
.SUBCKT DI_1N4747A 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 18.4
.MODEL DF D ( IS=20.6p RS=0.620 N=1.10
+ CJO=62.5p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.12f RS=1.31 N=2.12 )
.ENDS
*SRC=1N4748A;DI_1N4748A;Diodes;Zener 10V-50V; 22.0V 1.00W
Zener
*SYM=HZEN
.SUBCKT DI_1N4748A 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 20.3
.MODEL DF D ( IS=18.7p RS=0.620 N=1.10
+ CJO=58.2p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.75f RS=1.54 N=2.29 )
.ENDS
Diodes Inc.
Diodes Inc.
Diodes Inc.
Diodes Inc.
Diodes Inc.
Diodes Inc.
Diodes Inc.
Diodes Inc.
Diodes Inc.
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 44.7
.MODEL DF D ( IS=8.77p RS=0.620 N=1.10
+ CJO=35.2p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.75f RS=10.2 N=3.00 )
.ENDS
*SRC=1N4757A;DI_1N4757A;Diodes;Zener >50V; 51.0V 1.00W
*SYM=HZEN
.SUBCKT DI_1N4757A 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 48.7
.MODEL DF D ( IS=8.08p RS=0.620 N=1.10
+ CJO=33.6p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.62f RS=12.4 N=3.00 )
.ENDS
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 72.7
.MODEL DF D ( IS=5.49p RS=0.620 N=1.10
+ CJO=27.7p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.10f RS=30.4 N=3.00 )
.ENDS
*SRC=1N5221B;DI_1N5221B;Diodes;Zener <=10V; 2.40V 0.500W
*SYM=HZEN
.SUBCKT DI_1N5221B 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 0
.MODEL DF D ( IS=85.8p RS=2.47m N=1.10
+ CJO=388p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=17.2f RS=26.1 N=3.00 )
.ENDS
Diodes Inc.
Diodes Inc.
*SYM=HZEN
.SUBCKT DI_1N5239B 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 6.72
.MODEL DF D ( IS=22.6p RS=2.24 N=1.10
+ CJO=39.7p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.53f RS=6.11 N=3.00 )
.ENDS
*SRC=1N5241B;DI_1N5241B;Diodes;Zener 10V-50V; 11.0V 0.500W
*SYM=HZEN
.SUBCKT DI_1N5241B 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 9.12
.MODEL DF D ( IS=18.7p RS=1.24 N=1.10
+ CJO=58.2p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.75f RS=0.949 N=2.45 )
.ENDS
*SRC=AZ23C10;DI_AZ23C10;Diodes;Zener <=10V; 10.0V 0.300W
. Device contains two
*SYM=HZEN
.SUBCKT DI_AZ23C10 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 8.35
.MODEL DF D ( IS=12.4p RS=31.6 N=1.10
+ CJO=46.3p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.47f RS=3.45 N=2.23 )
Diodes Inc.
Diodes Inc.
Diodes Inc.
Diodes Inc. ZE
Diodes Inc.
Diodes Inc.
Diodes Inc.
Diodes Inc. ZE
Diodes Inc.
Diodes Inc.
Diodes Inc. ZE
Diodes Inc. Ze
Diodes Inc.
DZ 3 1 DR
VZ 2 3 12.7
.MODEL DF D ( IS=13.7p RS=31.9 N=1.10
+ CJO=32.7p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.75f RS=14.5 N=3.00
*SRC=BZT52C15LP;DI_BZT52C15LP;Diodes;Zener 10V-50V; 15.0V 0.250W
QFN Zener
*SYM=HZEN
.SUBCKT DI_BZT52C15LP 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 12.7
.MODEL DF D ( IS=6.87p RS=29.9 N=1.10
+ CJO=25.5p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.37f RS=14.5 N=3.00 )
.ENDS
Diodes Inc.
Diodes Inc. ZE
Diodes Inc.
Diodes Inc.
Diodes Inc.
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 13.6
.MODEL DF D ( IS=6.44p RS=29.7 N=1.10
+ CJO=25.1p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.29f RS=24.5 N=3.00 )
.ENDS
*SRC=BZT52C16S;DI_BZT52C16S;Diodes;Zener 10V-50V; 16.0V 0.200W
NER
*SYM=HZEN
.SUBCKT DI_BZT52C16S 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 13.6
.MODEL DF D ( IS=5.15p RS=29.1 N=1.10
+ CJO=25.4p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.03f RS=24.5 N=3.00 )
Diodes Inc. ZE
Diodes Inc.
Diodes Inc.
Diodes Inc.
********************************************************************************
**************************************************
*SRC=BZT52C18S;DI_BZT52C18S;Diodes;Zener 10V-50V; 18.0V 0.200W Diodes Inc. ZE
NER
*SYM=HZEN
.SUBCKT DI_BZT52C18S 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 15.6
.MODEL DF D ( IS=4.58p RS=28.7 N=1.10
+ CJO=25.3p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=9.16e-016 RS=29.5 N=3.00 )
.ENDS
********************************************************************************
*************************************************
*SRC=BZT52C18T;DI_BZT52C18T;Diodes;Zener 10V-50V; 18.0V 0.500W
*SYM=HZEN
.SUBCKT DI_BZT52C18 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 15.6
.MODEL DF D ( IS=11.4p RS=31.3 N=1.10
+ CJO=27.7p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.29f RS=29.5 N=3.00
*SRC=BZT52C20;DI_BZT52C20;Diodes;Zener 10V-50V; 20.0V 0.500W
*SYM=HZEN
.SUBCKT DI_BZT52C20 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 17.6
.MODEL DF D ( IS=10.3p RS=31.0 N=1.10
+ CJO=23.9p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.06f RS=39.5 N=3.00
Diodes Inc.
Diodes Inc.
Diodes Inc.
Diodes Inc. ZE
Diodes Inc.
Diodes Inc.
Diodes Inc.
Diodes Inc. ZE
Diodes Inc.
Diodes Inc.
Diodes Inc.
Diodes Inc. ZE
Diodes Inc.
Diodes Inc.
VZ 2 3 24.7
.MODEL DF D ( IS=7.63p RS=30.2 N=1.10
+ CJO=20.1p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.53f RS=41.1 N=3.00
*SRC=BZT52C27S;DI_BZT52C27S;Diodes;Zener 10V-50V; 27.0V 0.200W
NER
*SYM=HZEN
.SUBCKT DI_BZT52C27S 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 24.7
.MODEL DF D ( IS=3.05p RS=27.6 N=1.10
+ CJO=20.1p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=6.10e-016 RS=41.1 N=3.00 )
*SRC=BZT52C2V0;DI_BZT52C2V0;Diodes;Zener <=10V; 2.00V 0.500W
*SYM=HZEN
.SUBCKT DI_BZT52C2V0 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 0
.MODEL DF D ( IS=103p RS=37.6 N=1.10
+ CJO=516p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=20.6f RS=84.5 N=3.00
*SRC=BZT52C2V0S;DI_BZT52C2V0S;Diodes;Zener <=10V; 2.00V 0.200W
0 mW Zener
*SYM=HZEN
.SUBCKT DI_BZT52C2V0S 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 0
.MODEL DF D ( IS=41.2p RS=35.0 N=1.10
+ CJO=503p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=8.24f RS=84.5 N=3.00 )
*SRC=BZT52C2V0T;DI_BZT52C2V0T;Diodes;Zener <=10V; 2.00V 0.15W
*SYM=HZEN
.SUBCKT DI_BZT52C2V0T 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 0
.MODEL DF D ( IS=103p RS=37.6 N=1.10
+ CJO=516p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=20.6f RS=84.5 N=3.00
*SRC=BZT52C2V4;DI_BZT52C2V4;Diodes;Zener <=10V; 2.40V 0.500W
*SYM=HZEN
.SUBCKT DI_BZT52C2V4 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 0
.MODEL DF D ( IS=85.8p RS=37.1 N=1.10
+ CJO=461p VJ=0.750 M=0.330 TT=50.1n )
Diodes Inc. ZE
Diodes Inc.
Diodes Inc. 20
Diodes Inc.
Diodes Inc.
DIODES ZENER DI
Diodes Inc. 20
Diodes Inc.
Diodes Inc. -
DIODES ZENER DI
Diodes Inc. 20
Diodes Inc. -
Diodes Inc.
Diodes Inc. ZE
Diodes Inc.
VZ 2 3 30.7
.MODEL DF D ( IS=6.24p RS=29.6 N=1.10
+ CJO=17.6p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.25f RS=41.1 N=3.00
*SRC=BZT52C33S;DI_BZT52C33S;Diodes;Zener 10V-50V; 33.0V 0.200W
NER
*SYM=HZEN
.SUBCKT DI_BZT52C33S 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 30.7
.MODEL DF D ( IS=2.50p RS=27.0 N=1.10
+ CJO=17.6p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.99e-016 RS=41.1 N=3.00 )
Diodes Inc. ZE
DIODES ZENER DI
Diodes Inc. ZE
DZ 3 1 DR
VZ 2 3 36.6
.MODEL DF D ( IS=5.28p RS=29.1 N=1.10
+ CJO=16.3p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.06f RS=91.1 N=3.00 )
.ENDS
*SRC=BZT52C39LP;BZT52C39LP;Diodes;Zener 10V-50V; 39.0V 0.250W
ODE
*SYM=HZEN
.SUBCKT BZT52C39LP 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 36.6
.MODEL DF D ( IS=2.64p RS=27.2 N=1.10
+ CJO=24.9p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=5.28e-016 RS=91.1 N=3.00 )
.ENDS
DIODES ZENER DI
Diodes Inc. ZE
Diodes Inc. -
DIODES ZENER DI
Diodes Inc. 20
.SUBCKT DI_BZT52C3V0S 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 0.463
.MODEL DF D ( IS=27.5p RS=33.8 N=1.10
+ CJO=403p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=5.49f RS=79.5 N=3.00 )
*SRC=BZT52C3V0T;DI_BZT52C3V0T;Diodes;Zener <=10V; 3.00V 0.15W
*SYM=HZEN
.SUBCKT DI_BZT52C3V0T 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 0.534
.MODEL DF D ( IS=68.7p RS=36.4 N=1.10
+ CJO=384p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=13.7f RS=79.5 N=3.00 )
.ENDS
*SRC=BZT52C3V3;DI_BZT52C3V3;Diodes;Zener <=10V; 3.30V 0.500W
*SYM=HZEN
.SUBCKT DI_BZT52C3V3 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 0.827
.MODEL DF D ( IS=62.4p RS=36.2 N=1.10
+ CJO=403p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=12.5f RS=79.5 N=3.00
Diodes Inc. -
Diodes Inc.
DIODES ZENER DI
Diodes Inc. ZE
Diodes Inc.
*SYM=HZEN
.SUBCKT DI_BZT52C3V3T 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 0.827
.MODEL DF D ( IS=62.4p RS=36.2 N=1.10
+ CJO=403p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=12.5f RS=79.5 N=3.00
*SRC=BZT52C3V6;DI_BZT52C3V6;Diodes;Zener <=10V; 3.60V 0.500W
*SYM=HZEN
.SUBCKT DI_BZT52C3V6 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 1.15
.MODEL DF D ( IS=57.2p RS=35.9 N=1.10
+ CJO=390p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=11.4f RS=74.5 N=3.00
Diodes Inc.
DIODES ZENER DI
Diodes Inc. ZE
Diodes Inc.
Diodes Inc.
*SYM=HZEN
.SUBCKT DI_BZT52C3V9 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 1.44
.MODEL DF D ( IS=52.8p RS=35.7 N=1.10
+ CJO=384p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=10.6f RS=74.5 N=3.00
*SRC=BZT52C3V9LP;BZT52C3V9LP;Diodes;Zener <=10V; 3.90V 0.250W
ODE
*SYM=HZEN
.SUBCKT BZT52C3V9LP 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 1.39
.MODEL DF D ( IS=26.4p RS=33.7 N=1.10
+ CJO=122p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=5.28f RS=74.5 N=3.00 )
.END
DIODES ZENER DI
********************************************************************************
************************************************
*SRC=BZT52C3V9S;DI_BZT52C3V9S;Diodes;Zener <=10V; 3.90V 0.200W Diodes Inc. ZE
NER
*SYM=HZEN
.SUBCKT DI_BZT52C3V9S 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 1.37
.MODEL DF D ( IS=21.1p RS=33.1 N=1.10
+ CJO=384p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.23f RS=74.5 N=3.00 )
.ENDS
********************************************************************************
************************************************
*SRC=BZT52C3V9T;DI_BZT52C3V9T;Diodes;Zener <=10V; 3.90V 0.15W
*SYM=HZEN
.SUBCKT DI_BZT52C3V9T 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 1.44
.MODEL DF D ( IS=52.8p RS=35.7 N=1.10
+ CJO=384p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=10.6f RS=74.5 N=3.00
*SRC=BZT52C43;DI_BZT52C43;Diodes;Zener 10V-50V; 43.0V 0.410W
r
*SYM=HZEN
.SUBCKT DI_BZT52C43 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
Diodes Inc.
VZ 2 3 40.3
.MODEL DF D ( IS=3.93p RS=1.51 N=1.10
+ CJO=24.1p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=7.86e-016 RS=84.5 N=3.00 )
.ENDS
*SRC=BZT52C47;DI_BZT52C47;Diodes;Zener 10V-50V; 47.0V 0.410W
r
*SYM=HZEN
.SUBCKT DI_BZT52C47 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 44.3
.MODEL DF D ( IS=3.59p RS=1.48 N=1.10
+ CJO=24.1p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=7.19e-016 RS=84.5 N=3.00 )
.ENDS
Diodes Inc.
DIODES ZENER DI
Diodes Inc. ZE
Diodes Inc.
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 1.83
.MODEL DF D ( IS=47.9p RS=35.4 N=1.10
+ CJO=370p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=9.58f RS=74.5 N=3.00
*SRC=BZT52C4V7;DI_BZT52C4V7;Diodes;Zener <=10V; 4.70V 0.500W
*SYM=HZEN
.SUBCKT DI_BZT52C4V7 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 2.27
.MODEL DF D ( IS=43.8p RS=35.2 N=1.10
+ CJO=357p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=8.77f RS=64.5 N=3.00
Diodes Inc.
DIODES ZENER DI
Diodes Inc. ZE
Diodes Inc.
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 48.3
.MODEL DF D ( IS=3.31p RS=1.45 N=1.10
+ CJO=24.1p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=6.62e-016 RS=84.5 N=3.00 )
.ENDS
*SRC=BZT52C51S;DI_BZT52C51S;Diodes;Zener >50V; 51.0V 0.200W
*SYM=HZEN
.SUBCKT DI_BZT52C51S 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 48.2
.MODEL DF D ( IS=1.62p RS=25.8 N=1.10
+ CJO=24.1p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.23e-016 RS=84.5 N=3.00 )
*SRC=BZT52C5V1;DI_BZT52C5V1;Diodes;Zener <=10V; 5.10V 0.500W
*SYM=HZEN
.SUBCKT DI_BZT52C5V1 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 2.77
.MODEL DF D ( IS=40.4p RS=34.9 N=1.10
+ CJO=145p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=8.08f RS=44.5 N=3.00
Diodes Inc.
Diodes Inc.
Diodes Inc. ZE
Diodes Inc.
.SUBCKT DI_BZT52C5V1T 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 2.77
.MODEL DF D ( IS=40.4p RS=34.9 N=1.10
+ CJO=145p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=8.08f RS=44.5 N=3.00
*SRC=BZT52C5V6;DI_BZT52C5V6;Diodes;Zener <=10V; 5.60V 0.500W
*SYM=HZEN
.SUBCKT DI_BZT52C5V6 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 3.36
.MODEL DF D ( IS=36.8p RS=34.7 N=1.10
+ CJO=99.2p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=7.36f RS=24.5 N=3.00
Diodes Inc.
Diodes Inc.
Diodes Inc. ZE
Diodes Inc.
Diodes Inc.
*SYM=HZEN
.SUBCKT DI_BZT52C6V2 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 5.14
.MODEL DF D ( IS=33.2p RS=34.4 N=1.10
+ CJO=79.4p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=6.65f RS=2.30 N=1.49
*SRC=BZT52C6V2LP;DI_BZT52C6V2LP;Diodes;Zener <=10V; 6.20V 0.250W
QFN Zener
*SYM=HZEN
.SUBCKT DI_BZT52C6V2LP 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 5.11
.MODEL DF D ( IS=16.6p RS=32.4 N=1.10
+ CJO=79.4p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.32f RS=2.30 N=1.49 )
.ENDS
Diodes Inc.
Diodes Inc. ZE
Diodes Inc.
Diodes Inc.
Diodes Inc.
QFN Zener
*SYM=HZEN
.SUBCKT DI_BZT52C6V8LP 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 5.16
.MODEL DF D ( IS=15.1p RS=32.1 N=1.10
+ CJO=66.1p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.03f RS=3.45 N=2.23 )
.ENDS
*SRC=BZT52C6V8S;DI_BZT52C6V8S;Diodes;Zener <=10V; 6.80V 0.200W
NER
*SYM=HZEN
.SUBCKT DI_BZT52C6V8S 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 5.15
.MODEL DF D ( IS=12.1p RS=31.5 N=1.10
+ CJO=72.7p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.42f RS=3.45 N=2.23 )
Diodes Inc. ZE
Diodes Inc.
Diodes Inc.
Diodes Inc.
Diodes Inc. ZE
Diodes Inc.
Diodes Inc. -
Diodes Inc.
Diodes Inc. ZE
Diodes Inc. -
Diodes Inc. -
Diodes Inc.
Diodes Inc. ZE
Diodes Inc. -
Diodes Inc.
Diodes Inc. ZE
Diodes Inc.
Diodes Inc. ZE
Diodes Inc. ZE
Diodes Inc.
Diodes Inc. ZE
Diodes Inc.
Diodes Inc. ZE
Diodes Inc. ZE
Diodes Inc.
Diodes Inc. ZE
Diodes Inc.
Diodes Inc. ZE
Diodes Inc. ZE
Diodes Inc.
Diodes Inc. ZE
Diodes Inc.
Diodes Inc. ZE
Diodes Inc. ZE
Diodes Inc.
Diodes Inc. ZE
Diodes Inc.
Diodes Inc. ZE
Diodes Inc. ZE
Diodes Inc.
Diodes Inc. ZE
Diodes Inc.
Diodes Inc. ZE
Diodes Inc. ZE
Diodes Inc.
Diodes Inc. ZE
Diodes Inc.
Diodes Inc. ZE
Diodes Inc. ZE
Diodes Inc.
Diodes Inc. ZE
Diodes Inc.
Diodes Inc. ZE
Diodes Inc. ZE
Diodes Inc.
Diodes Inc. ZE
Diodes Inc.
Diodes Inc. ZE
Diodes Inc. ZE
Diodes Inc.
Diodes Inc. ZE
Diodes Inc.
Diodes Inc. ZE
Diodes Inc. ZE
Diodes Inc.
Diodes Inc. ZE
Diodes Inc.
Diodes Inc. ZE
Diodes Inc. ZE
Diodes Inc.
Diodes Inc. ZE
Diodes Inc.
Diodes Inc. ZE
Diodes Inc. ZE
Diodes Inc.
Diodes Inc. ZE
Diodes Inc.
Diodes Inc. ZE
Diodes Inc. ZE
Diodes Inc.
Diodes Inc. ZE
Diodes Inc.
Diodes Inc. ZE
Diodes Inc. ZE
Diodes Inc.
Diodes Inc. ZE
Diodes Inc.
Diodes Inc. ZE
Diodes Inc.
Diodes Inc. ZE
Diodes Inc.
Diodes Inc. ZE
Diodes Inc. ZE
Diodes Inc.
Diodes Inc. ZE
Diodes Inc.
Diodes Inc. ZE
Diodes Inc. ZE
Diodes Inc.
Diodes Inc. ZE
Diodes Inc.
Diodes Inc. ZE
Diodes Inc. ZE
Diodes Inc.
Diodes Inc. ZE
Diodes Inc.
Diodes Inc. ZE
Diodes Inc. ZE
Diodes Inc.
Diodes Inc. ZE
Diodes Inc.
Diodes Inc. ZE
Diodes Inc. ZE
Diodes Inc.
Diodes Inc. ZE
Diodes Inc.
Diodes Inc. -
Diodes Inc.
Diodes Inc. ZE
Diodes Inc. ZE
Diodes Inc.
Diodes Inc. ZE
Diodes Inc.
Diodes Inc. ZE
Diodes Inc. ZE
Diodes Inc.
Diodes Inc. ZE
Diodes Inc.
Diodes Inc. ZE
Diodes Inc. ZE
Diodes Inc.
Diodes Inc. ZE
Diodes Inc.
Diodes Inc. ZE
Diodes Inc. ZE
Diodes Inc.
Diodes Inc. ZE
Diodes Inc.
Diodes Inc. ZE
Diodes Inc. ZE
Diodes Inc.
Diodes Inc. ZE
Diodes Inc.
Diodes Inc. ZE
Diodes Inc.
Diodes Inc. ZE
Diodes Inc.
Diodes Inc. ZE
Diodes Inc. ZE
Diodes Inc.
Diodes Inc. ZE
Diodes Inc.
Diodes Inc. ZE
Diodes Inc. ZE
Diodes Inc.
Diodes Inc. ZE
Diodes Inc.
Diodes Inc. ZE
Diodes Inc. ZE
Diodes Inc.
Diodes Inc. ZE
VZ 2 3 12.7
.MODEL DF D ( IS=6.34p RS=29.7 N=1.10
+ CJO=30.2p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.27f RS=69.0 N=0.446 )
.ENDS
*SRC=DDZ9700T;DI_DDZ9700T;Diodes;Zener 10V-50V; 13.0V 0.150W
r
*SYM=HZEN
.SUBCKT DI_DDZ9700T 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 12.7
.MODEL DF D ( IS=4.75p RS=28.8 N=1.10
+ CJO=30.2p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=9.51e-016 RS=69.0 N=0.446 )
.ENDS
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 14.7
.MODEL DF D ( IS=4.12p RS=28.4 N=1.10
+ CJO=25.1p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=8.24e-016 RS=69.0 N=0.446 )
.ENDS
*SRC=DDZ9703;DI_DDZ9703;Diodes;Zener 10V-50V; 16.0V 0.500W
*SYM=HZEN
.SUBCKT DI_DDZ9703 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 15.7
.MODEL DF D ( IS=12.9p RS=31.7 N=1.10
+ CJO=22.6p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.58f RS=69.0 N=0.446 )
.ENDS
r
*SYM=HZEN
.SUBCKT DI_DDZ9705S 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 17.7
.MODEL DF D ( IS=4.58p RS=28.7 N=1.10
+ CJO=17.6p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=9.16e-016 RS=69.0 N=0.446 )
.ENDS
*SRC=DDZ9705T;DI_DDZ9705T;Diodes;Zener 10V-50V; 18.0V 0.150W
r
*SYM=HZEN
.SUBCKT DI_DDZ9705T 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 17.7
.MODEL DF D ( IS=3.43p RS=27.9 N=1.10
+ CJO=17.6p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=6.87e-016 RS=69.0 N=0.446 )
.ENDS
*SRC=DDZ9707;DI_DDZ9707;Diodes;Zener 10V-50V; 20.0V 0.500W
*SYM=HZEN
.SUBCKT DI_DDZ9707 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 19.7
.MODEL DF D ( IS=10.3p RS=31.0 N=1.10
+ CJO=17.6p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.06f RS=69.0 N=0.446 )
.ENDS
VZ 2 3 23.6
.MODEL DF D ( IS=3.43p RS=27.9 N=1.10
+ CJO=16.3p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=6.87e-016 RS=92.0 N=0.594 )
.ENDS
*SRC=DDZ9709T;DI_DDZ9709T;Diodes;Zener 10V-50V; 24.0V 0.150W
r
*SYM=HZEN
.SUBCKT DI_DDZ9709T 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 23.6
.MODEL DF D ( IS=2.57p RS=27.1 N=1.10
+ CJO=16.3p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=5.15e-016 RS=92.0 N=0.594 )
.ENDS
*SRC=DDZ9711;DI_DDZ9711;Diodes;Zener 10V-50V; 27.0V 0.500W
*SYM=HZEN
.SUBCKT DI_DDZ9711 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 26.6
.MODEL DF D ( IS=7.63p RS=30.2 N=1.10
+ CJO=15.1p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.53f RS=92.0 N=0.594 )
.ENDS
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 27.6
.MODEL DF D ( IS=7.36p RS=30.1 N=1.10
+ CJO=15.1p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.47f RS=92.0 N=0.594 )
*SRC=DDZ9712S;DI_DDZ9712S;Diodes;Zener 10V-50V; 28.0V 0.200W
r
*SYM=HZEN
.SUBCKT DI_DDZ9712S 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 27.6
.MODEL DF D ( IS=2.94p RS=27.5 N=1.10
+ CJO=15.1p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=5.89e-016 RS=92.0 N=0.594 )
.ENDS
r
*SYM=HZEN
.SUBCKT DI_DDZ9713T 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 29.6
.MODEL DF D ( IS=2.06p RS=26.5 N=1.10
+ CJO=13.8p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.12e-016 RS=92.0 N=0.594 )
.ENDS
*SRC=DDZ9714;DI_DDZ9714;Diodes;Zener 10V-50V; 33.0V 0.500W
*SYM=HZEN
.SUBCKT DI_DDZ9714 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 31.0
.MODEL DF D ( IS=6.24p RS=29.6 N=1.10
+ CJO=13.8p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.25f RS=1.35k N=3.00 )
.ENDS
.ENDS
*SRC=DDZ9715S;DI_DDZ9715S;Diodes;Zener 10V-50V; 36.0V 0.200W
r
*SYM=HZEN
.SUBCKT DI_DDZ9715S 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 34.0
.MODEL DF D ( IS=2.29p RS=26.8 N=1.10
+ CJO=13.1p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.58e-016 RS=1.45k N=3.00 )
.ENDS
VZ 2 3 36.9
.MODEL DF D ( IS=1.58p RS=25.7 N=1.10
+ CJO=12.8p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.17e-016 RS=1.45k N=3.00 )
.ENDS
*SRC=DDZ9717;DI_DDZ9717;Diodes;Zener 10V-50V; 43.0V 0.500W
*SYM=HZEN
.SUBCKT DI_DDZ9717 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 40.8
.MODEL DF D ( IS=4.79p RS=28.9 N=1.10
+ CJO=22.6p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=9.58e-016 RS=6.25k N=3.00 )
.ENDS
DZ 3 1 DR
VZ 2 3 6.68
.MODEL DF D ( IS=9.05p RS=30.7 N=1.10
+ CJO=41.0p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.81f RS=4.11 N=3.00 )
.ENDS
*SRC=DDZX10C;DI_DDZX10C;Diodes;Zener <=10V; 10.0V 0.300W
*SYM=HZEN
.SUBCKT DI_DDZX10C 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 7.61
.MODEL DF D ( IS=12.4p RS=31.6 N=1.10
+ CJO=39.7p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.47f RS=4.11 N=3.00 )
.ENDS
DZ 3 1 DR
VZ 2 3 11.6
.MODEL DF D ( IS=8.83p RS=30.6 N=1.10
+ CJO=25.1p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.77f RS=8.23 N=3.00 )
.ENDS
*SRC=DDZX15;DI_DDZX15;Diodes;Zener 10V-50V; 15.0V 0.300W
*SYM=HZEN
.SUBCKT DI_DDZX15 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 12.6
.MODEL DF D ( IS=8.24p RS=30.4 N=1.10
+ CJO=22.6p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.65f RS=10.2 N=3.00 )
.ENDS
DZ 3 1 DR
VZ 2 3 19.7
.MODEL DF D ( IS=5.62p RS=29.3 N=1.10
+ CJO=18.9p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.12f RS=14.5 N=3.00 )
.ENDS
*SRC=DDZX24C;DI_DDZX24C;Diodes;Zener 10V-50V; 24.0V 0.300W
*SYM=HZEN
.SUBCKT DI_DDZX24C 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 21.6
.MODEL DF D ( IS=5.15p RS=29.1 N=1.10
+ CJO=17.6p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.03f RS=19.5 N=3.00 )
.ENDS
DZ 3 1 DR
VZ 2 3 33.4
.MODEL DF D ( IS=3.43p RS=27.9 N=1.10
+ CJO=23.9p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=6.87e-016 RS=69.5 N=3.00 )
.ENDS
*SRC=DDZX39F;DI_DDZX39F;Diodes;Zener 10V-50V; 39.0V 0.300W
*SYM=HZEN
.SUBCKT DI_DDZX39 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 36.3
.MODEL DF D ( IS=3.17p RS=27.7 N=1.10
+ CJO=22.6p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=6.34e-016 RS=69.5 N=3.00 )
.ENDS
*SRC=DDZX43;DI_DDZX43;Diodes;Zener 10V-50V; 43.0V 0.300W
*SYM=HZEN
.SUBCKT DI_DDZX43 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 40.3
.MODEL DF D ( IS=2.87p RS=27.4 N=1.10
+ CJO=20.1p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=5.75e-016 RS=74.5 N=3.00 )
.ENDS
DZ 3 1 DR
VZ 2 3 3.87
.MODEL DF D ( IS=19.9p RS=32.9 N=1.10
+ CJO=80.7p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.99f RS=3.11 N=3.00 )
.ENDS
*SRC=DDZX6V8C;DI_DDZX6V8C;Diodes;Zener <=10V; 6.80V 0.300W
*SYM=HZEN
.SUBCKT DI_DDZX6V8C 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 4.52
.MODEL DF D ( IS=18.2p RS=32.7 N=1.10
+ CJO=72.7p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.64f RS=1.15 N=2.97 )
.ENDS
DZ 3 1 DR
VZ 2 3 8.86
.MODEL DF D ( IS=41.2p RS=0.773 N=1.10
+ CJO=622p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=8.24f RS=0.230 N=1.49 )
*SRC=DFLZ11;DI_DFLZ11;Diodes;Zener 10V-50V; 11.0V 1.00W
*SYM=HZEN
.SUBCKT DI_DFLZ11 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 8.58
.MODEL DF D ( IS=37.5p RS=0.759 N=1.10
+ CJO=478p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=7.49f RS=2.45 N=3.00 )
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 30.6
.MODEL DF D ( IS=12.5p RS=0.603 N=1.10
+ CJO=220p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.50f RS=2.89 N=3.00 )
*SRC=DFLZ36;DI_DFLZ36;Diodes;Zener 10V-50V; 36.0V 1.00W
*SYM=HZEN
.SUBCKT DI_DFLZ36 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 34.9
.MODEL DF D ( IS=11.4p RS=0.590 N=1.10
+ CJO=220p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.29f RS=1.15 N=1.49 )
Diodes Inc.
Diodes Inc.
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 8.80
.MODEL DF D ( IS=13.1p RS=31.7 N=1.10
+ CJO=45.2p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.62f RS=4.60 N=2.97 )
*SRC=DZ23C12;DI_DZ23C12;Diodes;Zener 10V-50V; 12.0V 0.300W
*SYM=HZEN
.SUBCKT DI_DZ23C12 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 9.75
.MODEL DF D ( IS=12.0p RS=31.5 N=1.10
+ CJO=42.7p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.40f RS=9.46 N=3.00 )
Diodes Inc.
Diodes Inc.
Diodes Inc.
Diodes Inc.
Diodes Inc.
Diodes Inc.
Diodes Inc.
Diodes Inc.
Diodes Inc.
Diodes Inc.
Diodes Inc.
.SUBCKT DI_DZ23C30 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 27.4
.MODEL DF D ( IS=4.81p RS=28.9 N=1.10
+ CJO=26.1p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=9.61e-016 RS=64.5 N=3.00 )
*SRC=DZ23C33;DI_DZ23C33;Diodes;Zener 10V-50V; 33.0V 0.300W
*SYM=HZEN
.SUBCKT DI_DZ23C33 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 30.4
.MODEL DF D ( IS=4.37p RS=28.6 N=1.10
+ CJO=25.1p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=8.74e-016 RS=64.5 N=3.00 )
Diodes Inc.
Diodes Inc.
Diodes Inc.
Diodes Inc.
Diodes Inc.
Diodes Inc.
Diodes Inc.
Diodes Inc.
Diodes Inc. -
Diodes Inc.
Diodes Inc.
*SYM=HZEN
.SUBCKT DI_DZ23C4V7 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 2.25
.MODEL DF D ( IS=30.7p RS=34.2 N=1.10
+ CJO=74.9p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=6.14f RS=64.5 N=3.00 )
*SRC=DZ23C51;DI_DZ23C51;Diodes;Zener >50V; 51.0V 0.300W
*SYM=HZEN
.SUBCKT DI_DZ23C51 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 48.5
.MODEL DF D ( IS=2.83p RS=1.77 N=1.10
+ CJO=13.8p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=5.65e-016 RS=141 N=3.00 )
Diodes Inc.
Diodes Inc.
Diodes Inc.
Diodes Inc.
VZ 2 3 5.18
.MODEL DF D ( IS=21.2p RS=33.1 N=1.10
+ CJO=43.0p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.24f RS=3.45 N=2.23 )
*SRC=DZ23C7V5;DI_DZ23C7V5;Diodes;Zener <=10V; 7.50V 0.300W
*SYM=HZEN
.SUBCKT DI_DZ23C7V5 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 5.87
.MODEL DF D ( IS=19.2p RS=32.8 N=1.10
+ CJO=37.1p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.85f RS=3.45 N=2.23 )
Diodes Inc.
Diodes Inc.
Diodes Inc.
DIODES INC
Diodes Inc.
.ENDS
*SRC=MMBZ5221B;DI_MMBZ5221B;Diodes;Zener <=10V; 2.40V 0.350W
*SYM=HZEN
.SUBCKT DI_MMBZ5221B 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 0
.MODEL DF D ( IS=60.1p RS=36.1 N=1.10
+ CJO=205p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=12.0f RS=26.1 N=3.00 )
Diodes Inc.
Diodes Inc. -
Diodes Inc. -
DIODES Zener
*SYM=HZEN
.SUBCKT MMBZ5222B 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 0
.MODEL DF D ( IS=57.7p RS=36.0 N=1.10
+ CJO=255p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=11.5f RS=26.1 N=3.00 )
.ENDS
*SRC=MMBZ5223B;DI_MMBZ5223B;Diodes;Zener <=10V; 2.70V 0.350W
*SYM=HZEN
.SUBCKT DI_MMBZ5223B 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 0
.MODEL DF D ( IS=53.4p RS=35.7 N=1.10
+ CJO=172p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=10.7f RS=26.1 N=3.00 )
.ENDS
Diodes Inc.
Diodes Inc. -
Diodes Inc. -
.SUBCKT DI_MMBZ5223BW 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 0
.MODEL DF D ( IS=30.5p RS=34.1 N=1.10
+ CJO=172p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=6.10f RS=26.1 N=3.00 )
*SRC=MMBZ5225B;DI_MMBZ5225B;Diodes;Zener <=10V; 3.00V 0.350W
*SYM=HZEN
.SUBCKT DI_MMBZ5225B 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 0.274
.MODEL DF D ( IS=48.1p RS=35.4 N=1.10
+ CJO=147p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=9.61f RS=26.1 N=3.00 )
.ENDS
Diodes Inc.
Diodes Inc. -
Diodes Inc. -
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 0.230
.MODEL DF D ( IS=27.5p RS=33.8 N=1.10
+ CJO=147p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=5.49f RS=26.1 N=3.00 )
*SRC=MMBZ5226BS;DI_MMBZ5226BS;Diodes;Zener <=10V; 3.30V 0.200W Diodes Inc. Th
is model covers only one element. There are two elements per pkg.
*SYM=HZEN
.SUBCKT DI_MMBZ5226BS 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 0.563
.MODEL DF D ( IS=25.0p RS=33.6 N=1.10
+ CJO=230p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.99f RS=24.1 N=3.00 )
*SRC=MMBZ5226BT;DI_MMBZ5226BT;Diodes;Zener <=10V; 3.30V 0.150W
*SYM=HZEN
.SUBCKT DI_MMBZ5226BT 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 0.541
.MODEL DF D ( IS=18.7p RS=32.7 N=1.10
+ CJO=127p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.75f RS=24.1 N=3.00 )
Diodes Inc. -
Diodes Inc. -
Diodes Inc.
Diodes Inc. -
Diodes Inc. -
Diodes Inc.
Diodes Inc. -
Diodes Inc. -
Diodes Inc.
Diodes Inc. Th
is model covers only one element. There are two elements per pkg.
*SYM=HZEN
.SUBCKT DI_MMBZ5229BS 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 1.66
.MODEL DF D ( IS=19.2p RS=32.8 N=1.10
+ CJO=170p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.83f RS=18.1 N=3.00 )
*SRC=MMBZ5229BT;DI_MMBZ5229BT;Diodes;Zener <=10V; 4.30V 0.150W
*SYM=HZEN
.SUBCKT DI_MMBZ5229BT 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 1.64
.MODEL DF D ( IS=14.4p RS=32.0 N=1.10
+ CJO=85.6p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.87f RS=18.1 N=3.00 )
Diodes Inc. -
Diodes Inc. -
Diodes Inc.
.SUBCKT DI_MMBZ5230BS 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 2.12
.MODEL DF D ( IS=17.5p RS=32.6 N=1.10
+ CJO=160p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.51f RS=15.1 N=3.00 )
*SRC=MMBZ5230BT;DI_MMBZ5230BT;Diodes;Zener <=10V; 4.70V 0.150W
*SYM=HZEN
.SUBCKT DI_MMBZ5230BT 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 2.09
.MODEL DF D ( IS=13.1p RS=31.7 N=1.10
+ CJO=74.9p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.63f RS=15.1 N=3.00 )
Diodes Inc. -
Diodes Inc. -
Diodes Inc.
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 2.55
.MODEL DF D ( IS=16.2p RS=32.3 N=1.10
+ CJO=145p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.23f RS=13.1 N=3.00 )
*SRC=MMBZ5231BT;DI_MMBZ5231BT;Diodes;Zener <=10V; 5.10V 0.150W
*SYM=HZEN
.SUBCKT DI_MMBZ5231BT 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 2.53
.MODEL DF D ( IS=12.1p RS=31.5 N=1.10
+ CJO=66.2p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.42f RS=13.1 N=3.00 )
Diodes Inc. -
Diodes Inc. -
Diodes Inc.
VZ 2 3 3.16
.MODEL DF D ( IS=14.7p RS=32.1 N=1.10
+ CJO=130p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.94f RS=7.11 N=3.00 )
*SRC=MMBZ5232BT;DI_MMBZ5232BT;Diodes;Zener <=10V; 5.60V 0.150W
*SYM=HZEN
.SUBCKT DI_MMBZ5232BT 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 3.14
.MODEL DF D ( IS=11.0p RS=31.2 N=1.10
+ CJO=57.6p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.21f RS=7.11 N=3.00 )
Diodes Inc. -
Diodes Inc. -
Diodes Inc.
Diodes Inc.
Diodes Inc. -
Diodes Inc. -
Diodes Inc.
Diodes Inc. -
Diodes Inc. -
Diodes Inc.
Diodes
Diodes Inc. -
.SUBCKT DI_MMBZ5236BW 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 5.14
.MODEL DF D ( IS=11.0p RS=31.2 N=1.10
+ CJO=37.1p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.20f RS=2.12 N=3.00 )
*SRC=MMBZ5237B;DI_MMBZ5237B;Diodes;Zener <=10V; 8.20V 0.350W
*SYM=HZEN
.SUBCKT DI_MMBZ5237B 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 5.84
.MODEL DF D ( IS=17.6p RS=32.6 N=1.10
+ CJO=32.5p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.52f RS=4.11 N=3.00 )
.ENDS
Diodes Inc.
Diodes Inc. -
Diodes Inc. -
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 5.79
.MODEL DF D ( IS=10.0p RS=31.0 N=1.10
+ CJO=32.5p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.01f RS=4.11 N=3.00 )
*SRC=MMBZ5238B;DI_MMBZ5238B;Diodes;Zener <=10V; 8.70V 0.350W
*SYM=HZEN
.SUBCKT DI_MMBZ5238B 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 6.33
.MODEL DF D ( IS=16.6p RS=32.4 N=1.10
+ CJO=29.7p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.31f RS=4.11 N=3.00 )
.ENDS
Diodes Inc.
Diodes Inc.
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 6.64
.MODEL DF D ( IS=9.05p RS=30.7 N=1.10
+ CJO=80.0p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.81f RS=6.11 N=3.00 )
*SRC=MMBZ5239BT;DI_MMBZ5239BT;Diodes;Zener <=10V; 9.10V 0.150W
*SYM=HZEN
.SUBCKT DI_MMBZ5239BT 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 6.62
.MODEL DF D ( IS=6.79p RS=29.9 N=1.10
+ CJO=27.8p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.36f RS=6.11 N=3.00 )
Diodes Inc. -
Diodes Inc. -
Diodes Inc.
VZ 2 3 7.40
.MODEL DF D ( IS=8.24p RS=30.4 N=1.10
+ CJO=77.0p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.65f RS=13.1 N=3.00 )
*SRC=MMBZ5240BT;DI_MMBZ5240BT;Diodes;Zener <=10V; 10.0V 0.150W
*SYM=HZEN
.SUBCKT DI_MMBZ5240BT 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 7.37
.MODEL DF D ( IS=6.18p RS=29.6 N=1.10
+ CJO=24.1p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.24f RS=13.1 N=3.00 )
Diodes Inc. -
Diodes Inc. -
Diodes Inc.
Diodes Inc.
Diodes Inc.
Diodes Inc.
Diodes
Diodes Inc.
Diodes Inc.
Diodes Inc.
Diodes Inc.
Diodes Inc. Ze
Diodes Inc.
.ENDS
*SRC=MMBZ5245BS;DI_MMBZ5245BS;Diodes;Zener 10V-50V; 15.0V 0.200W Diodes Inc.
This model covers only one element. There are two elements per pkg.
*SYM=HZEN
.SUBCKT DI_MMBZ5245BS 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 12.6
.MODEL DF D ( IS=5.49p RS=29.3 N=1.10
+ CJO=60.0p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.10f RS=6.86 N=3.00 )
*SRC=MMBZ5245BT;DI_MMBZ5245BT;Diodes;Zener 10V-50V; 15.0V 0.150W
*SYM=HZEN
.SUBCKT DI_MMBZ5245BT 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 12.4
.MODEL DF D ( IS=4.12p RS=28.4 N=1.10
+ CJO=40.6p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=8.24e-016 RS=28.1 N=3.00 )
Diodes Inc.
Diodes Inc.
Diodes Inc.
.ENDS
*SRC=MMBZ5246BS;DI_MMBZ5246BS;Diodes;Zener 10V-50V; 16.0V 0.200W Diodes Inc.
This model covers only one element. There are two elements per pkg.
*SYM=HZEN
.SUBCKT DI_MMBZ5246BS 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 13.6
.MODEL DF D ( IS=5.15p RS=29.1 N=1.10
+ CJO=58.0p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.03f RS=7.04 N=3.00 )
*SRC=MMBZ5246BT;DI_MMBZ5246BT;Diodes;Zener 10V-50V; 16.0V 0.150W
*SYM=HZEN
.SUBCKT DI_MMBZ5246BT 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 13.6
.MODEL DF D ( IS=3.86p RS=28.2 N=1.10
+ CJO=35.8p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=7.73e-016 RS=7.04 N=3.00 )
Diodes Inc.
Diodes Inc.
Diodes Inc.
.ENDS
*SRC=MMBZ5248BS;DI_MMBZ5248BS;Diodes;Zener 10V-50V; 18.0V 0.200W Diodes Inc.
This model covers only one element. There are two elements per pkg.
*SYM=HZEN
.SUBCKT DI_MMBZ5248BS 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 15.6
.MODEL DF D ( IS=4.58p RS=28.7 N=1.10
+ CJO=53.0p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=9.16e-016 RS=9.90 N=3.00 )
SRC=MMBZ5248BT;DI_MMBZ5248BT;Diodes;Zener 10V-50V; 18.0V 0.150W
*SYM=HZEN
.SUBCKT DI_MMBZ5248BT 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 15.6
.MODEL DF D ( IS=3.43p RS=27.9 N=1.10
+ CJO=33.5p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=6.87e-016 RS=9.90 N=3.00 )
.ENDS
Diodes Inc. -
Diodes Inc.
Diodes Inc.
.ENDS
*SRC=MMBZ5250BS;DI_MMBZ5250BS;Diodes;Zener 10V-50V; 20.0V 0.200W Diodes Inc.
This model covers only one element. There are two elements per pkg.
*SYM=HZEN
.SUBCKT DI_MMBZ5250BS 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 17.6
.MODEL DF D ( IS=4.12p RS=28.4 N=1.10
+ CJO=50.0p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=8.24e-016 RS=12.5 N=3.00 )
*SRC=MMBZ5250BT;DI_MMBZ5250BT;Diodes;Zener 10V-50V; 20.0V 0.150W
*SYM=HZEN
.SUBCKT DI_MMBZ5250BT 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 17.6
.MODEL DF D ( IS=3.09p RS=27.6 N=1.10
+ CJO=31.6p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=6.18e-016 RS=12.5 N=3.00 )
Diodes Inc.
Diodes Inc.
Diodes Inc.
.ENDS
*SRC=MMBZ5251BS;DI_MMBZ5251BS;Diodes;Zener 10V-50V; 22.0V 0.200W Diodes Inc.
This model covers only one element. There are two elements per pkg.
*SYM=HZEN
.SUBCKT DI_MMBZ5251BS 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 19.6
.MODEL DF D ( IS=3.75p RS=28.2 N=1.10
+ CJO=48.0p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=7.49e-016 RS=15.1 N=3.00 )
*SRC=MMBZ5251BT;DI_MMBZ5251BT;Diodes;Zener 10V-50V; 22.0V 0.150W
*SYM=HZEN
.SUBCKT DI_MMBZ5251BT 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 19.6
.MODEL DF D ( IS=2.81p RS=27.3 N=1.10
+ CJO=30.1p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=5.62e-016 RS=15.1 N=3.00 )
Diodes Inc.
Diodes Inc.
Diodes Inc.
.ENDS
*SRC=MMBZ5252BS;DI_MMBZ5252BS;Diodes;Zener 10V-50V; 24.0V 0.200W Diodes Inc.
This model covers only one element. There are two elements per pkg.
*SYM=HZEN
.SUBCKT DI_MMBZ5252BS 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 21.6
.MODEL DF D ( IS=3.43p RS=27.9 N=1.10
+ CJO=45.0p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=6.87e-016 RS=18.1 N=3.00 )
*SRC=MMBZ5252BT;DI_MMBZ5252BT;Diodes;Zener 10V-50V; 24.0V 0.150W
*SYM=HZEN
.SUBCKT DI_MMBZ5252BT 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 21.6
.MODEL DF D ( IS=2.57p RS=27.1 N=1.10
+ CJO=28.9p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=5.15e-016 RS=18.1 N=3.00 )
Diodes Inc.
Diodes Inc.
Diodes Inc.
.ENDS
*SRC=MMBZ5254BS;DI_MMBZ5254BS;Diodes;Zener 10V-50V; 27.0V 0.200W Diodes Inc.
This model covers only one element. There are two elements per pkg.
*SYM=HZEN
.SUBCKT DI_MMBZ5254BS 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 24.6
.MODEL DF D ( IS=3.05p RS=27.6 N=1.10
+ CJO=42.0p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=6.10e-016 RS=25.5 N=3.00 )
*SRC=MMBZ5254BT;DI_MMBZ5254BT;Diodes;Zener 10V-50V; 27.0V 0.150W
*SYM=HZEN
.SUBCKT DI_MMBZ5254BT 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 24.5
.MODEL DF D ( IS=2.29p RS=26.8 N=1.10
+ CJO=27.3p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.58e-016 RS=25.5 N=3.00 )
Diodes Inc.
Diodes Inc.
Diodes Inc.
.ENDS
*SRC=MMBZ5255BS;DI_MMBZ5255BS;Diodes;Zener 10V-50V; 28.0V 0.200W Diodes Inc.
This model covers only one element. There are two elements per pkg.
*SYM=HZEN
.SUBCKT DI_MMBZ5255BS 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 25.6
.MODEL DF D ( IS=2.94p RS=27.5 N=1.10
+ CJO=41.0p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=5.89e-016 RS=26.7 N=3.00 )
*SRC=MMBZ5255BT;DI_MMBZ5255BT;Diodes;Zener 10V-50V; 28.0V 0.150W
*SYM=HZEN
.SUBCKT DI_MMBZ5255BT 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 25.6
.MODEL DF D ( IS=2.21p RS=26.7 N=1.10
+ CJO=26.9p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.41e-016 RS=26.7 N=3.00 )
Diodes Inc.
Diodes Inc.
Diodes Inc.
.ENDS
*SRC=MMBZ5256BS;DI_MMBZ5256BS;Diodes;Zener 10V-50V; 30.0V 0.200W Diodes Inc.
This model covers only one element. There are two elements per pkg.
*SYM=HZEN
.SUBCKT DI_MMBZ5256BS 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 27.6
.MODEL DF D ( IS=2.75p RS=27.3 N=1.10
+ CJO=40.0p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=5.49e-016 RS=30.5 N=3.00 )
*SRC=MMBZ5256BT;DI_MMBZ5256BT;Diodes;Zener 10V-50V; 30.0V 0.150W
*SYM=HZEN
.SUBCKT DI_MMBZ5256BT 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 27.5
.MODEL DF D ( IS=2.06p RS=26.5 N=1.10
+ CJO=26.1p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.12e-016 RS=30.5 N=3.00 )
Diodes Inc.
Diodes Inc.
Diodes Inc.
.ENDS
*SRC=MMBZ5257BS;DI_MMBZ5257BS;Diodes;Zener 10V-50V; 33.0V 0.200W Diodes Inc.
This model covers only one element. There are two elements per pkg.
*SYM=HZEN
.SUBCKT DI_MMBZ5257BS 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 30.6
.MODEL DF D ( IS=2.50p RS=27.0 N=1.10
+ CJO=39.0p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.99e-016 RS=37.6 N=3.00 )
*SRC=MMBZ5257BT;DI_MMBZ5257BT;Diodes;Zener 10V-50V; 33.0V 0.150W
*SYM=HZEN
.SUBCKT DI_MMBZ5257BT 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 30.5
.MODEL DF D ( IS=1.87p RS=26.2 N=1.10
+ CJO=25.1p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.75e-016 RS=37.6 N=3.00 )
Diodes Inc.
Diodes Inc.
Diodes Inc.
.ENDS
*SRC=MMBZ5258BS;DI_MMBZ5258BS;Diodes;Zener 10V-50V; 36.0V 0.200W Diodes Inc.
This model covers only one element. There are two elements per pkg.
*SYM=HZEN
.SUBCKT DI_MMBZ5258BS 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 33.5
.MODEL DF D ( IS=2.29p RS=26.8 N=1.10
+ CJO=38.0p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.58e-016 RS=47.1 N=3.00 )
*SRC=MMBZ5258BT;DI_MMBZ5258BT;Diodes;Zener 10V-50V; 36.0V 0.150W
*SYM=HZEN
.SUBCKT DI_MMBZ5258BT 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 33.5
.MODEL DF D ( IS=1.72p RS=25.9 N=1.10
+ CJO=24.2p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.43e-016 RS=47.1 N=3.00 )
Diodes Inc.
Diodes Inc.
Diodes Inc.
.ENDS
*SRC=MMBZ5259BS;DI_MMBZ5259BS;Diodes;Zener 10V-50V; 39.0V 0.200W Diodes Inc.
This model covers only one element. There are two elements per pkg.
*SYM=HZEN
.SUBCKT DI_MMBZ5259BS 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 36.5
.MODEL DF D ( IS=2.11p RS=26.5 N=1.10
+ CJO=37.0p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=4.23e-016 RS=55.7 N=3.00 )
*SRC=MMBZ5259BT;DI_MMBZ5259BT;Diodes;Zener 10V-50V; 39.0V 0.150W
*SYM=HZEN
.SUBCKT DI_MMBZ5259BT 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 36.5
.MODEL DF D ( IS=1.58p RS=25.7 N=1.10
+ CJO=23.5p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.17e-016 RS=55.7 N=3.00 )
Diodes Inc.
Diodes Inc.
Diodes Inc. 50
Diodes Inc. 50
Diodes Inc. 50
Diodes Inc. 50
Diodes Inc. 50
Diodes Inc. 50
Diodes Inc. 50
Diodes Inc. 50
Diodes Inc. 50
Diodes Inc. 50
Diodes Inc. 50
Diodes Inc. 50
Diodes Inc. 50
Diodes Inc. 50
Diodes Inc. 50
Diodes Inc. 50
Diodes Inc. 50
Diodes Inc. 50
Diodes Inc. 50
Diodes Inc.
Diodes Inc. 50
Diodes Inc.
Diodes Inc. 50
Diodes Inc.
Diodes Inc. 50
Diodes Inc.
Diodes Inc. 50
Diodes Inc.
Diodes Inc. 50
Diodes Inc.
Diodes Inc. 50
Diodes Inc.
Diodes Inc. 50
Diodes Inc.
Diodes Inc. 50
Diodes Inc.
Diodes Inc. 50
Diodes Inc.
Diodes Inc. 50
Diodes Inc.
Diodes Inc. 50
Diodes Inc.
Diodes Inc. 50
Diodes Inc.
Diodes Inc. 50
Diodes Inc.
Diodes Inc. 50
Diodes Inc.
DIODES Zener
DIODES ZENER DI
DIODES ZENER DI
DIODES ZENER DI
VZ 2 3 11.9
.MODEL DF D ( IS=15.8p RS=4.57 N=1.10
+ CJO=80.3p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.17f RS=2.30 N=1.49 )
.ENDS
*SRC=PD3Z284C15;PD3Z284C15;Diodes;Zener 10V-50V; 15.0V 0.500W
ODE
*SYM=HZEN
.SUBCKT PD3Z284C15 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 13.4
.MODEL DF D ( IS=13.7p RS=4.53 N=1.10
+ CJO=75.3p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=2.75f RS=3.45 N=2.23 )
.ENDS
DIODES ZENER DI
DIODES ZENER DI
DIODES ZENER DI
DIODES ZENER DI
DIODES ZENER DI
*SYM=HZEN
.SUBCKT PD3Z284C22 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 19.7
.MODEL DF D ( IS=9.36p RS=4.42 N=1.10
+ CJO=59.3p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.87f RS=9.46 N=3.00 )
.ENDS
*SRC=PD3Z284C24;PD3Z284C24;Diodes;Zener 10V-50V; 24.0V 0.500W
ODE
*SYM=HZEN
.SUBCKT PD3Z284C24 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 21.7
.MODEL DF D ( IS=8.58p RS=4.40 N=1.10
+ CJO=55.4p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.72f RS=14.5 N=3.00 )
.ENDS
DIODES ZENER DI
DIODES ZENER DI
DIODES ZENER DI
DIODES ZENER DI
DIODES ZENER DI
DIODES ZENER DI
DIODES ZENER DI
DIODES ZENER DI
DIODES ZENER DI
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 0.534
.MODEL DF D ( IS=68.7p RS=4.99 N=1.10
+ CJO=121p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=13.7f RS=79.5 N=3.00 )
.ENDS
*SRC=PD3Z284C3V3;PD3Z284C3V3;Diodes;Zener <=10V; 3.30V 0.500W
ODE
*SYM=HZEN
.SUBCKT PD3Z284C3V3 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 0.827
.MODEL DF D ( IS=62.4p RS=4.96 N=1.10
+ CJO=117p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=12.5f RS=79.5 N=3.00 )
.ENDS
DIODES ZENER DI
DIODES ZENER DI
DIODES ZENER DI
DIODES ZENER DI
DIODES ZENER DI
DIODES ZENER DI
DIODES ZENER DI
DIODES ZENER DI
DIODES ZENER DI
DIODES ZENER DI
DIODES ZENER DI
DIODES ZENER DI
Diodes Inc. Ze
Diodes Inc. Ze
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 12.7
.MODEL DF D ( IS=5.49p RS=29.3 N=1.10
+ CJO=25.8p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=1.10f RS=14.5 N=3.00 )
*SRC=QZX363C20;DI_QZX363C20;Diodes;Zener 10V-50V; 20.0V 0.200W
ner Diode Array, quad, one node of four
*SYM=HZEN
.SUBCKT DI_QZX363C20 1 2
*
Terminals
A K
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 17.5
.MODEL DF D ( IS=4.12p RS=28.4 N=1.10
+ CJO=22.6p VJ=1.00 M=0.330 TT=50.1n )
.MODEL DR D ( IS=8.24e-016 RS=39.5 N=3.00 )
Diodes Inc. Ze
Diodes Inc. Ze
Diodes Inc. Ze
Diodes Inc.
D1 1 2 DF
DZ 3 1 DR
VZ 2 3 4.20
.MODEL DF D ( IS=16.2p RS=25.3 N=1.10
+ CJO=28.0p VJ=0.750 M=0.330 TT=50.1n )
.MODEL DR D ( IS=3.23f RS=1.89 N=1.22 )
.ENDS
*SRC=MMBD5004BRM;MMBD5004BRM;Diodes;Si; 400V 1.25A 50.0ns
diodes
.MODEL MMBD5004BRM D ( IS=128n RS=33.6m BV=400 IBV=5.00u
+ CJO=2.00p M=0.333 N=2.62 TT=72.0n )
DIODES Switching
Diodes Inc.
Diodes Inc.
Diodes Inc.
Diodes Inc.
Diodes Inc.
Diodes Inc.
Diodes Inc.
Diodes, Inc.
Diodes Inc.
*SRC=BAV20W;DI_BAV20W;Diodes;Si; 150V 0.400A 50.0ns Diodes Inc. .MODEL DI_BAV20W D ( IS=1.09u RS=0.105 BV=150 IBV=100n
+ CJO=5.00p M=0.333 N=3.29 TT=72.0n )
*SRC=BAV20WS;DI_BAV20WS;Diodes;Si; 150V 0.400A 50.0ns
Switching Diode
.MODEL DI_BAV20WS D ( IS=1.09u RS=0.105 BV=150 IBV=100n
+ CJO=5.00p M=0.333 N=3.29 TT=72.0n )
Diodes Inc.
*SRC=BAV21W;DI_BAV21W;Diodes;Si; 200V 0.400A 50.0ns Diodes Inc. .MODEL DI_BAV21W D ( IS=1.09u RS=0.105 BV=200 IBV=100n
+ CJO=5.00p M=0.333 N=3.29 TT=72.0n )
*SRC=BAV21WS;DI_BAV21WS;Diodes;Si; 200V 0.400A 50.0ns
Switching Diode
.MODEL DI_BAV21WS D ( IS=1.09u RS=0.105 BV=200 IBV=100n
+ CJO=5.00p M=0.333 N=3.29 TT=72.0n )
Diodes Inc.
ode
.MODEL DI_BAW56 D ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u
+ CJO=1.72p M=0.333 N=2.34 TT=5.76n )
*SRC=BAW567DW;DI_BAW567DW;Diodes;Si; 75.0V 0.300A 4.00ns
ing Diode
.MODEL DI_BAW567DW D ( IS=68.6n RS=0.377 BV=75.0 IBV=1.00u
+ CJO=1.72p M=0.333 N=2.34 TT=5.76n )
Diodes
DIODES Inc
Diodes Inc.
Diodes Inc. Sw
Diodes Inc.
Diodes Inc.
DIODES Switching D
DIODES Switching D
DIODES Switching di
Diodes INC S
Diodes Inc.
Diodes Inc.
IS
IBV
MJ
EG
BV
=
=
=
=
=
1.5672e-06
0.0001
0.457747
0.750278
50
RS
CJO
FC
TRS1
TT
=
=
=
=
=
0.0209949
8.98694e-10
0.5
0.00406277
0 )
Diodes
Diodes
Diodes
Diodes
*
*Zetex PDS560 Spice Model v1.0 Last Revised 20/02/09
*
.MODEL PDS560 D IS=1E-7 N=1.02 ISR=1.3E-7 NR=1.1 BV=63 IBV=2E-4
+ NBV=2 IBVL=8E-8 NBVL=600 RS=0.026 CJO=520E-12 VJ=1.1 M=0.53
+ EG=0.74 XTI=2 TRS1=4e-3
*
*$
*
*
(c) 2009 Diodes Incorporated
*
* The copyright in these models and the designs embodied belong
* to Diodes Incorporated (" Diodes "). They are supplied
* free of charge by Diodes for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Diodes Incorporated, its distributors
* or agents.
*
* Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, US
A
*
*Zetex PDS760 Spice Model v1.0 Last Revised 24/02/09
*
.MODEL PDS760 D IS=2.1E-7 N=1.02 ISR=2.6E-7 NR=1.1 BV=63 IBV=2E-4
+ NBV=2 IBVL=5.5E-7 NBVL=350 RS=0.016 CJO=1060E-12 VJ=1.1 M=0.53
+ EG=0.74 XTI=2 TRS1=4e-3
*
*$
*
*
(c) 2009 Diodes Incorporated
*
* The copyright in these models and the designs embodied belong
* to Diodes Incorporated (" Diodes "). They are supplied
* free of charge by Diodes for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Diodes Incorporated, its distributors
* or agents.
*
* Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, US
A
*SRC=PDS835L;DI_PDS835L;Diodes;Si; 35.0V 8.00A 15.0ns Diodes Inc. 8A Low VF
Schottky Barrier Rectifier
.MODEL DI_PDS835L D ( IS=42.9u RS=6.30m BV=35.0 IBV=1.40m
+ CJO=623p M=0.333 N=1.43 TT=21.6n )
*SRC=SB1100;DI_SB1100;Diodes;Si; 100.0V 1.00A 5.00ns Diodes Inc. Schottky
.MODEL DI_SB1100 D ( IS=6.63u RS=62.3m BV=100.0 IBV=500u
+ CJO=199p M=0.333 N=1.70 TT=7.20n )
*SRC=SB120;DI_SB120;Diodes;Si; 20.0V 1.00A 5.00ns Diodes Inc. Schottky
.MODEL DI_SB120 D ( IS=31.5u RS=49.2m BV=20.0 IBV=500u
+ CJO=239p M=0.333 N=1.70 TT=7.20n )
*SRC=SBL1630;DI_SBL1630;Diodes;Si;
+.MODEL
CJO=1.72n
DI_SBL1630
M=0.333
D N=1.67
( IS=903u
TT=7.20n
RS=3.60m
30.0V
) BV=30.0
16.0AIBV=1.00m
5.00ns Diodes Inc. Schottky
*SRC=SBL1630PT;DI_SBL1630PT;Diodes;Si; 30.0V 16.0A 5.00ns
tky - Single device of dual
.MODEL DI_SBL1630PT D ( IS=575u RS=3.47m BV=30.0 IBV=500u
+ CJO=1.86n M=0.333 N=1.68 TT=7.20n )
*SRC=SBL1635;DI_SBL1635;Diodes;Si;
+.MODEL
CJO=1.72n
DI_SBL1635
M=0.333
D N=1.67
( IS=903u
TT=7.20n
RS=3.60m
35.0V
) BV=35.0
16.0AIBV=1.00m
5.00ns Diodes Inc. Schottky
*SRC=SBL1635PT;DI_SBL1635PT;Diodes;Si; 35.0V 16.0A 5.00ns
tky - Single device of dual
.MODEL DI_SBL1635PT D ( IS=575u RS=3.47m BV=35.0 IBV=500u
+ CJO=1.86n M=0.333 N=1.68 TT=7.20n )
*SRC=SBL1640;DI_SBL1640;Diodes;Si;
+.MODEL
CJO=1.72n
DI_SBL1640
M=0.333
D N=1.67
( IS=903u
TT=7.20n
RS=3.60m
40.0V
) BV=40.0
16.0AIBV=1.00m
5.00ns Diodes Inc. Schottky
*SRC=SBL1640PT;DI_SBL1640PT;Diodes;Si; 40.0V 16.0A 5.00ns
tky - Single device of dual
.MODEL DI_SBL1640PT D ( IS=575u RS=3.47m BV=40.0 IBV=500u
+ CJO=1.86n M=0.333 N=1.68 TT=7.20n )
*SRC=SBL1645;DI_SBL1645;Diodes;Si;
+.MODEL
CJO=1.72n
DI_SBL1645
M=0.333
D N=1.67
( IS=903u
TT=7.20n
RS=3.60m
45.0V
) BV=45.0
16.0AIBV=1.00m
5.00ns Diodes Inc. Schottky
*SRC=SBL1645PT;DI_SBL1645PT;Diodes;Si; 45.0V 16.0A 5.00ns
tky - Single device of dual
.MODEL DI_SBL1645PT D ( IS=575u RS=3.47m BV=45.0 IBV=500u
+ CJO=1.86n M=0.333 N=1.68 TT=7.20n )
*SRC=SBL1650;DI_SBL1650;Diodes;Si;
+.MODEL
CJO=1.72n
DI_SBL1650
M=0.333
D N=2.27
( IS=1.38m
TT=7.20n
RS=3.22m
50.0V
) BV=50.0
16.0A IBV=1.00m
5.00ns Diodes Inc. Schottky
*SRC=SBL1650PT;DI_SBL1650PT;Diodes;Si; 50.0V 16.0A 5.00ns
tky - Single device of dual
.MODEL DI_SBL1650PT D ( IS=89.9u RS=3.60m BV=50.0 IBV=500u
+ CJO=1.86n M=0.333 N=1.67 TT=7.20n )
*SRC=SBL1660;DI_SBL1660;Diodes;Si;
+.MODEL
CJO=1.72n
DI_SBL1660
M=0.333
D N=2.27
( IS=1.38m
TT=7.20n
RS=3.22m
60.0V
) BV=60.0
16.0A IBV=1.00m
5.00ns Diodes Inc. Schottky
*SRC=SBL1660PT;DI_SBL1660PT;Diodes;Si; 60.0V 16.0A 5.00ns
tky - Single device of dual
.MODEL DI_SBL1660PT D ( IS=89.9u RS=3.60m BV=60.0 IBV=500u
*SRC=SBL530;DI_SBL530;Diodes;Si;
+.MODEL
CJO=968p
DI_SBL530
M=0.333
D N=1.69
( IS=926u
TT=14.4n
RS=9.47m
30.0V
) BV=30.0
5.00A IBV=500u
10.0ns Diodes Inc. Schottky
*SRC=SBL535;DI_SBL535;Diodes;Si;
+.MODEL
CJO=968p
DI_SBL535
M=0.333
D N=1.69
( IS=926u
TT=14.4n
RS=9.47m
35.0V
) BV=35.0
5.00A IBV=500u
10.0ns Diodes Inc. Schottky
*SRC=SBL540;DI_SBL540;Diodes;Si;
+.MODEL
CJO=968p
DI_SBL540
M=0.333
D N=1.69
( IS=926u
TT=14.4n
RS=9.47m
40.0V
) BV=40.0
5.00A IBV=500u
10.0ns Diodes Inc. Schottky
*SRC=SBL545;DI_SBL545;Diodes;Si;
+.MODEL
CJO=968p
DI_SBL545
M=0.333
D N=1.69
( IS=926u
TT=14.4n
RS=9.47m
45.0V
) BV=45.0
5.00A IBV=500u
10.0ns Diodes Inc. Schottky
*SRC=SBL550;DI_SBL550;Diodes;Si;
+.MODEL
CJO=968p
DI_SBL550
M=0.333
D N=1.70
( IS=14.0u
TT=14.4n
RS=8.33m
50.0V
) BV=50.0
5.00A IBV=500u
10.0ns Diodes Inc. Schottky
*SRC=SBL560;DI_SBL560;Diodes;Si;
+.MODEL
CJO=968p
DI_SBL560
M=0.333
D N=1.70
( IS=14.0u
TT=14.4n
RS=8.33m
60.0V
) BV=60.0
5.00A IBV=500u
10.0ns Diodes Inc. Schottky
*SRC=SBL6030PT;DI_SBL6030PT;Diodes;Si; 30.0V 60.0A 10.0ns
tkyCJO=3.25n
+.MODEL
- Single
DI_SBL6030PT
device DofN=1.68
M=0.333
(dual
IS=1.93m
TT=14.4n
RS=917u
)
BV=30.0 IBV=20.0m
Diodes Inc. SB
Diodes Inc
/ SKY
.MODEL DI_SBR30A45CT D ( IS=120u RS=1.66m BV=45.0 IBV=500u
+ CJO=1.87n M=0.333 N=1.18 TT=50.7n )
*SRC=SBR30U30CT;DI_SBR30U30CT;Diodes;Si; 20.0V 30.0A 35.0ns
ttky rectifier
.MODEL DI_SBR30U30CT D ( IS=580u RS=3.06m BV=20.0 IBV=230u
+ CJO=997p M=0.333 N=1.35 TT=50.4n
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=02/07/2009
*VERSION=3
*PIN_ORDER anode cathode
*
.SUBCKT SBR3U20SA 1 2
D1 1 3 Dmod
R1 3 2 95
L1 3 2 1.8E-9
.MODEL Dmod D (IS=8E-5 N=1.1 ISR=5E-8 NR=1.0 BV=21 IBV=1E-3 NBV=5
+ IBVL=2E-6 NBVL=500 RS=0.015 CJO=3500E-12 VJ=0.38 M=0.7 EG=0.5 XTI=2
+ TRS1=0.003 TT=3e-9)
.ENDS
*
*$
*SRC=SBR3U30P1;DI_SBR3U30P1;Diodes;Si; 30.0V 3.00A 12.0ns
ky rectifier
.MODEL DI_SBR3U30P1 D ( IS=1.14m RS=11.7m BV=30.0 IBV=146u
+ CJO=951p M=0.333 N=1.71 TT=17.3n)
*SRC=SBR40U45CT;DI_SBR40U45CT;Diodes;Si; 45.0V 40.0A 74.0ns
ttky rectifier
.MODEL DI_SBR40U45CT D ( IS=30.5m RS=1.77m BV=45.0 IBV=250u
+ CJO=8.18n M=0.333 N=2.24 TT=107n
.MODEL SBR4U130LP D (
+ IS=15.568E-6
+
+
+
+
+
+
+
+
+
+
+
N=1.031
RS=20e-3
IKF=257.62E-6
CJO=5.0982E-9
M=1.0812
VJ=68.681E-3
ISR=38.247E-9
NR=4.9950
BV=130.27
IBV=100.00E-6
XTI=2.89 )
*************************************
*SRC=10A04;DI_10A04;Diodes;Si; 400V 10.0A 3.00us Diodes Inc. 10A Rectifier
.MODEL DI_10A04 D ( IS=844n RS=2.06m BV=400 IBV=10.0u
+ CJO=277p M=0.333 N=2.06 TT=4.32u )
********************************************************************************
*************************************
********************************************************************************
*************************************
*SRC=10A05;DI_10A05;Diodes;Si; 600V 10.0A 3.00us Diodes Inc. 10A Rectifier
.MODEL DI_10A05 D ( IS=844n RS=2.06m BV=600 IBV=10.0u
+ CJO=148p M=0.333 N=2.06 TT=4.32u )
********************************************************************************
*************************************
********************************************************************************
*************************************
*SRC=10A06;DI_10A06;Diodes;Si; 800V 10.0A 3.00us Diodes Inc. 10A Rectifier
.MODEL DI_10A06 D ( IS=844n RS=2.06m BV=800 IBV=10.0u
+ CJO=148p M=0.333 N=2.06 TT=4.32u )
********************************************************************************
*************************************
********************************************************************************
*************************************
*SRC=10A07;DI_10A07;Diodes;Si; 1.00kV 10.0A 3.00us Diodes Inc. 10A Rectifie
r
.MODEL DI_10A07 D ( IS=844n RS=2.06m BV=1.00k IBV=10.0u
+ CJO=148p M=0.333 N=2.06 TT=4.32u )
********************************************************************************
*************************************
*SRC=1N4001;DI_1N4001;Diodes;Si; 50.0V 1.00A 3.00us Diodes, Inc. diode
.MODEL DI_1N4001 D ( IS=76.9p RS=42.0m BV=50.0 IBV=5.00u
+ CJO=39.8p M=0.333 N=1.45 TT=4.32u )
********************************************************************************
*******************************************************
*SRC=1N4001G;DI_1N4001G;Diodes;Si; 50.0V 1.00A 2.00us Diodes Inc. Glass Pas
sivated Rectifier
.MODEL DI_1N4001G D ( IS=65.4p RS=42.2m BV=50.0 IBV=5.00u
+ CJO=14.8p M=0.333 N=1.36 TT=2.88u )
********************************************************************************
*******************************************************
********************************************************************************
******************************************************
*SRC=1N4001GL;DI_1N4001GL;Diodes;Si; 50.0V 1.00A 2.00us Diodes Inc. Glass P
assivated Rectifier
.MODEL DI_1N4001GL D ( IS=65.4p RS=42.2m BV=50.0 IBV=5.00u
+ CJO=14.8p M=0.333 N=1.36 TT=2.88u )
********************************************************************************
*******************************************************
*SRC=1N4002;DI_1N4002;Diodes;Si; 100V 1.00A 3.00us Diodes, Inc. diode
.MODEL DI_1N4002 D ( IS=76.9p RS=42.0m BV=100 IBV=5.00u
+ CJO=39.8p M=0.333 N=1.45 TT=4.32u )
********************************************************************************
*******************************************************
Passivated Rectifier
.MODEL DI_1N4007GL D ( IS=65.4p RS=42.2m BV=1.00k IBV=5.00u
+ CJO=14.8p M=0.333 N=1.36 TT=2.88u )
********************************************************************************
******************************************************
*SRC=1N5400;DI_1N5400;Diodes;Si; 50.0V 3.00A 3.00us Diodes Inc. Standard Re
ctifier
.MODEL DI_1N5400 D ( IS=63.0n RS=14.1m BV=50.0 IBV=10.0u
+ CJO=125p M=0.333 N=1.70 TT=4.32u )
*SRC=1N5401;DI_1N5401;Diodes;Si; 100V 3.00A 3.00us Diodes Inc. Standard Rec
tifier
.MODEL DI_1N5401 D ( IS=63.0n RS=14.1m BV=100 IBV=10.0u
+ CJO=125p M=0.333 N=1.70 TT=4.32u )
*SRC=1N5402;DI_1N5402;Diodes;Si; 200V 3.00A 3.00us Diodes Inc. Standard Rec
tifier
.MODEL DI_1N5402 D ( IS=63.0n RS=14.1m BV=200 IBV=10.0u
+ CJO=125p M=0.333 N=1.70 TT=4.32u )
*SRC=1N5404;DI_1N5404;Diodes;Si; 400V 3.00A 3.00us Diodes Inc. Standard Rec
tifier
.MODEL DI_1N5404 D ( IS=63.0n RS=14.1m BV=400 IBV=10.0u
+ CJO=125p M=0.333 N=1.70 TT=4.32u )
*SRC=1N5406;DI_1N5406;Diodes;Si; 600V 3.00A 3.00us Diodes Inc. Standard Rec
tifier
.MODEL DI_1N5406 D ( IS=63.0n RS=14.1m BV=600 IBV=10.0u
+ CJO=53.0p M=0.333 N=1.70 TT=4.32u )
*SRC=1N5407;DI_1N5407;Diodes;Si; 800V 3.00A 3.00us Diodes Inc. Standard Rec
tifier
.MODEL DI_1N5407 D ( IS=63.0n RS=14.1m BV=800 IBV=10.0u
+ CJO=53.0p M=0.333 N=1.70 TT=4.32u )
*SRC=1N5408;DI_1N5408;Diodes;Si; 1.00kV 3.00A 3.00us Diodes Inc. Standard R
ectifier
.MODEL DI_1N5408 D ( IS=63.0n RS=14.1m BV=1.00k IBV=10.0u
+ CJO=53.0p M=0.333 N=1.70 TT=4.32u )
*SRC=6A05;DI_6A05;Diodes;Si; 50.0V 6.00A 2.00us Diodes Inc.
.MODEL DI_6A05 D ( IS=52.4n RS=7.00m BV=50.0 IBV=10.0u
+ CJO=60.0p M=0.333 N=1.70 TT=2.88u )
*SRC=6A1;DI_6A1;Diodes;Si; 100V 6.00A 2.00us Diodes Inc.
.MODEL DI_6A1 D ( IS=52.4n RS=7.00m BV=100 IBV=10.0u
+ CJO=60.0p M=0.333 N=1.70 TT=2.88u )
*SRC=6A10;DI_6A10;Diodes;Si; 1.00kV 6.00A 2.00us Diodes Inc.
.MODEL DI_6A10 D ( IS=52.4n RS=7.00m BV=1.00k IBV=10.0u
+ CJO=60.0p M=0.333 N=1.70 TT=2.88u )
*SRC=6A2;DI_6A2;Diodes;Si; 200V 6.00A 2.00us Diodes Inc.
.MODEL DI_6A2 D ( IS=52.4n RS=7.00m BV=200 IBV=10.0u
+ CJO=60.0p M=0.333 N=1.70 TT=2.88u )
*SRC=6A4;DI_6A4;Diodes;Si; 400V 6.00A 2.00us Diodes Inc.
.MODEL DI_6A4 D ( IS=52.4n RS=7.00m BV=400 IBV=10.0u
+ CJO=60.0p M=0.333 N=1.70 TT=2.88u )
RS
IBV
MJ
EG
TRS1
=
=
=
=
=
0.218519
5e-06
0.395956
1.19064
-0.00446639
RS
IBV
MJ
EG
IKF
=
=
=
=
=
0.146586
1e-06
0.395956
1.05458
9.9308e-06
Diodes Inc.
Diodes Inc.
********************************************************************************
****************************************************
*SRC=MURS140;DI_MURS140;Diodes;Si; 400V 1.00A 50.0ns Diodes Inc. Super Fast
Rectifier
.MODEL DI_MURS140 D ( IS=17.1n RS=20.6m BV=400 IBV=2.00u
+ CJO=45.0p M=0.333 N=1.73 TT=72.0n )
********************************************************************************
***************************************************
*SRC=MURS160;DI_MURS160;Diodes;Si; 600V 1.00A 50.0ns Diodes Inc. Super Fast
Rectifier
.MODEL DI_MURS160 D ( IS=17.1n RS=20.6m BV=600 IBV=2.00u
+ CJO=45.0p M=0.333 N=1.73 TT=72.0n )
********************************************************************************
***************************************************
*SRC=MURS320;DI_MURS320;Diodes;Si; 200V 3.00A 25.0ns Diodes Inc. Super Fast
Rectifier
.MODEL DI_MURS320 D ( IS=11.8n RS=7.89m BV=200 IBV=5.00u
+ CJO=45.0p M=0.333 N=1.56 TT=36.0n )
********************************************************************************
***************************************************
*SRC=PDU340;DI_PDU340;Diodes;Si; 400V 3.00A 50.0ns Diodes Inc. Ultrafast Re
ctifier
.MODEL DI_PDU340 D ( IS=3.74u RS=25.9m BV=400 IBV=10.0u
+ CJO=86.2p M=0.333 N=2.58 TT=72.0n )
*SRC=PDU420;DI_PDU420;Diodes;Si; 400V 4.00A 25.0ns Diodes Inc. ultrafast re
ctifier
.MODEL DI_PDU420 D ( IS=189n RS=10.5m BV=400 IBV=5.00u
+ CJO=276p M=0.333 N=1.73 TT=36.0n )
*SRC=PDU540;DI_PDU540;Diodes;Si; 400V 5.00A 35.0ns Diodes Inc. Ultrafast Re
ctifier
.MODEL DI_PDU540 D ( IS=2.68u RS=8.33m BV=400 IBV=10.0u
+ CJO=196p M=0.333 N=2.27 TT=50.4n )
*SRC=PDU620;DI_PDU620;Diodes;Si; 200V 6.00A 25.0ns Diodes Inc. Ultrafast Re
ctifier
.MODEL DI_PDU620 D ( IS=190n RS=9.91m BV=200 IBV=5.00u
+ CJO=402p M=0.333 N=1.69 TT=36.0n )
*SRC=PDU620CT;DI_PDU620CT;Diodes;Si; 200V 3.00A 25.0ns Diodes Inc. Ultrafas
t Rectifier
.MODEL DI_PDU620CT D ( IS=7.48n RS=19.5m BV=200 IBV=5.00u
+ CJO=223p M=0.333 N=1.42 TT=36.0n )
*SRC=PR1001G;DI_PR1001G;Diodes;Si; 50.0V 1.00A 150ns Diodes Inc. Fast
Rectifier
.MODEL DI_PR1001G D ( IS=5.00n RS=29.8m BV=50.0 IBV=5.00u
+ CJO=27.8p M=0.333 N=1.72 TT=216n )
*SRC=PR1002G;DI_PR1002G;Diodes;Si; 100V 1.00A 150ns Diodes Inc. Fast
Rectifier
.MODEL DI_PR1002G D ( IS=5.00n RS=29.8m BV=100 IBV=5.00u
+ CJO=27.8p M=0.333 N=1.72 TT=216n )
*SRC=PR1003G;DI_PR1003G;Diodes;Si; 200V 1.00A 150ns
Rectifier
.MODEL DI_PR1003G D ( IS=5.00n RS=29.8m BV=200 IBV=5.00u
+ CJO=27.8p M=0.333 N=1.72 TT=216n )
*SRC=PR1004G;DI_PR1004G;Diodes;Si; 400V 1.00A 150ns Diodes Inc. Fast
Rectifier
.MODEL DI_PR1004G D ( IS=5.00n RS=29.8m BV=400 IBV=5.00u
+ CJO=27.8p M=0.333 N=1.72 TT=216n )
*SRC=PR1005G;DI_PR1005G;Diodes;Si; 600V 1.00A 250ns Diodes Inc. Fast
Rectifier
.MODEL DI_PR1005G D ( IS=5.00n RS=29.8m BV=600 IBV=5.00u
+ CJO=19.9p M=0.333 N=1.72 TT=360n )
*SRC=PR1006G;DI_PR1006G;Diodes;Si; 800V 1.00A 500ns Diodes Inc. Fast
Rectifier
.MODEL DI_PR1006G D ( IS=5.00n RS=29.8m BV=800 IBV=5.00u
+ CJO=19.9p M=0.333 N=1.72 TT=720n )
*SRC=PR1007G;DI_PR1007G;Diodes;Si; 1.00kV 1.00A 500ns Diodes Inc. Fast
Rectifier
.MODEL DI_PR1007G D ( IS=5.00n RS=29.8m BV=1.00k IBV=5.00u
+ CJO=19.9p M=0.333 N=1.72 TT=720n )
*SRC=PR6001;DI_PR6001;Diodes;Si; 50.0V 6.00A 150ns Diodes Inc. Fast Rectifi
er
.MODEL DI_PR6001 D ( IS=863n RS=12.6m BV=50.0 IBV=10.0u
+ CJO=663p M=0.333 N=1.70 TT=216n )
*SRC=RS1A;DI_RS1A;Diodes;Si; 50.0V 1.00A 150ns Diodes Inc. Fast Rectifier
.MODEL DI_RS1A D ( IS=948n RS=81.3m BV=50.0 IBV=5.00u
+ CJO=27.7p M=0.333 N=2.48 TT=216n )
********************************************************************************
*****************************************************
*SRC=RS1AB;DI_RS1AB;Diodes;Si; 50.0V 1.00A 150ns Diodes Inc. Fast Rectifier
.MODEL DI_RS1AB D ( IS=948n RS=81.3m BV=50.0 IBV=5.00u
+ CJO=27.7p M=0.333 N=2.48 TT=216n )
********************************************************************************
*****************************************************
*SRC=RS1B;DI_RS1B;Diodes;Si; 100V 1.00A 150ns Diodes Inc. Fast Rectifier
.MODEL DI_RS1B D ( IS=948n RS=81.3m BV=100 IBV=5.00u
+ CJO=27.7p M=0.333 N=2.48 TT=216n )
********************************************************************************
******************************************************
*SRC=RS1BB;DI_RS1BB;Diodes;Si; 100V 1.00A 150ns Diodes Inc. Fast Rectifier
.MODEL DI_RS1BB D ( IS=948n RS=81.3m BV=100 IBV=5.00u
+ CJO=27.7p M=0.333 N=2.48 TT=216n )
********************************************************************************
******************************************************
*SRC=RS1D;DI_RS1D;Diodes;Si; 200V 1.00A 150ns Diodes Inc. Fast Rectifier
.MODEL DI_RS1D D ( IS=948n RS=81.3m BV=200 IBV=5.00u
+ CJO=27.7p M=0.333 N=2.48 TT=216n )
********************************************************************************
******************************************************
*SRC=RS1DB;DI_RS1DB;Diodes;Si; 200V 1.00A 150ns
*SRC=SF10FG;DI_SF10FG;Diodes;Si; 300V 1.00A 40.0ns Diodes Inc. .MODEL DI_SF10FG D ( IS=50.9p RS=75.5m BV=300 IBV=10.0u
+ CJO=139p M=0.333 N=1.70 TT=57.6n )
*SRC=SF10GG;DI_SF10GG;Diodes;Si; 400V 1.00A 40.0ns Diodes Inc. .MODEL DI_SF10GG D ( IS=50.9p RS=75.5m BV=400 IBV=10.0u
+ CJO=139p M=0.333 N=1.70 TT=57.6n )
*SRC=SF10HG;DI_SF10HG;Diodes;Si; 500V 1.00A 50.0ns Diodes Inc. .MODEL DI_SF10HG D ( IS=13.5u RS=30.9m BV=500 IBV=10.0u
+ CJO=92.5p M=0.333 N=5.40 TT=72.0n )
*SRC=SF10JG;DI_SF10JG;Diodes;Si; 600V 1.00A 50.0ns Diodes Inc. .MODEL DI_SF10JG D ( IS=13.5u RS=30.9m BV=600 IBV=10.0u
+ CJO=92.5p M=0.333 N=5.40 TT=72.0n )
*SRC=UF1001;DI_UF1001;Diodes;Si; 50.0V 1.00A 50.0ns Diodes Inc. 1.0A UltraFast Rectifier
.MODEL DI_UF1001 D ( IS=125u RS=17.5m BV=50.0 IBV=5.00u
+ CJO=79.6p M=0.333 N=3.75 TT=72.0n )
*SRC=UF1002;DI_UF1002;Diodes;Si; 100V 1.00A 50.0ns Diodes Inc. 1.0A Ultra-F
ast Rectifier
.MODEL DI_UF1002 D ( IS=125u RS=17.5m BV=100 IBV=5.00u
+ CJO=79.6p M=0.333 N=3.75 TT=72.0n )
*SRC=UF1003;DI_UF1003;Diodes;Si; 200V 1.00A 50.0ns Diodes Inc. 1.0A Ultra-F
ast Rectifier
.MODEL DI_UF1003 D ( IS=125u RS=17.5m BV=200 IBV=5.00u
+ CJO=79.6p M=0.333 N=3.75 TT=72.0n )
*SRC=UF1004;DI_UF1004;Diodes;Si; 400V 1.00A 50.0ns Diodes Inc. 1.0A Ultra-F
ast Rectifier
.MODEL DI_UF1004 D ( IS=38.7u RS=15.4m BV=400 IBV=5.00u
+ CJO=79.6p M=0.333 N=4.17 TT=72.0n )
*SRC=UF1005;DI_UF1005;Diodes;Si; 600V 1.00A 50.0ns Diodes Inc. 1.0A Ultra-F
ast Rectifier
.MODEL DI_UF1005 D ( IS=13.9u RS=56.6m BV=600 IBV=5.00u
+ CJO=46.4p M=0.333 N=4.11 TT=72.0n )
*SRC=UF1006;DI_UF1006;Diodes;Si; 800V 1.00A 50.0ns Diodes Inc. 1.0A Ultra-F
ast Rectifier
.MODEL DI_UF1006 D ( IS=13.9u RS=56.6m BV=800 IBV=5.00u
+ CJO=46.4p M=0.333 N=4.11 TT=72.0n )
*SRC=UF1007;DI_UF1007;Diodes;Si; 1.00kV 1.00A 50.0ns Diodes Inc. 1.0A Ultra
-Fast Rectifier
.MODEL DI_UF1007 D ( IS=13.9u RS=56.6m BV=1.00k IBV=5.00u
+ CJO=46.4p M=0.333 N=4.11 TT=72.0n )
*SRC=UF3001;DI_UF3001;Diodes;Si; 50.0V 3.00A 50.0ns Diodes Inc. Ultra-Fast
Rectifier
.MODEL DI_UF3001 D ( IS=70.7u RS=43.0u BV=50.0 IBV=10.0u
+ CJO=139p M=0.333 N=4.27 TT=72.0n )
*SRC=UF3002;DI_UF3002;Diodes;Si; 100V 3.00A 50.0ns Diodes Inc. Ultra-Fast R
ectifier
.MODEL DI_UF3002 D ( IS=70.7u RS=43.0u BV=100 IBV=5.00u
+ CJO=139p M=0.333 N=4.27 TT=72.0n )
one element
.MODEL DI_2W01G D ( IS=28.4n RS=21.1m BV=100 IBV=5.00u
+ CJO=29.6p M=0.333 N=1.95 TT=4.32u )
*SRC=2W02G;DI_2W02G;Diodes;Si; 200V 2.00A 3.00us Diodes Inc. Bridge -- for
one element
.MODEL DI_2W02G D ( IS=28.4n RS=21.1m BV=200 IBV=5.00u
+ CJO=29.6p M=0.333 N=1.95 TT=4.32u )
*SRC=2W04G;DI_2W04G;Diodes;Si; 400V 2.00A 3.00us Diodes Inc. Bridge -- for
one element
.MODEL DI_2W04G D ( IS=28.4n RS=21.1m BV=400 IBV=5.00u
+ CJO=29.6p M=0.333 N=1.95 TT=4.32u )
*SRC=2W06G;DI_2W06G;Diodes;Si; 600V 2.00A 3.00us Diodes Inc. Bridge -- for
one element
.MODEL DI_2W06G D ( IS=28.4n RS=21.1m BV=600 IBV=5.00u
+ CJO=29.6p M=0.333 N=1.95 TT=4.32u )
*SRC=2W08G;DI_2W08G;Diodes;Si; 800V 2.00A 3.00us Diodes Inc. Bridge -- for
one element
.MODEL DI_2W08G D ( IS=28.4n RS=21.1m BV=800 IBV=5.00u
+ CJO=29.6p M=0.333 N=1.95 TT=4.32u )
*SRC=2W10G;DI_2W10G;Diodes;Si; 1.00kV 2.00A 3.00us Diodes Inc. Bridge -- fo
r one element
.MODEL DI_2W10G D ( IS=28.4n RS=21.1m BV=1.00k IBV=5.00u
+ CJO=29.6p M=0.333 N=1.95 TT=4.32u )
*SRC=DF005M;DI_DF005M;Diodes;Si; 50.0V 1.00A 3.00us Diodes Inc. Bridge -- f
or one element
.MODEL DI_DF005M D ( IS=4.42n RS=42.0m BV=50.0 IBV=10.0u
+ CJO=65.0p M=0.333 N=1.70 TT=4.32u )
*SRC=DF005S;DI_DF005S;Diodes;Si; 50.0V 1.00A 3.00us Diodes Inc. Bridge -- f
or one element
.MODEL DI_DF005S D ( IS=4.42n RS=42.0m BV=50.0 IBV=10.0u
+ CJO=65.0p M=0.333 N=1.70 TT=4.32u )
*SRC=DF01M;DI_DF01M;Diodes;Si; 100V 1.00A 3.00us Diodes Inc. Bridge -- for
one element
.MODEL DI_DF01M D ( IS=4.42n RS=42.0m BV=100 IBV=10.0u
+ CJO=65.0p M=0.333 N=1.70 TT=4.32u )
*SRC=DF01S;DI_DF01S;Diodes;Si; 100V 1.00A 3.00us Diodes Inc. Bridge -- for
one element
.MODEL DI_DF01S D ( IS=4.42n RS=42.0m BV=100 IBV=10.0u
+ CJO=65.0p M=0.333 N=1.70 TT=4.32u )
*SRC=DF02M;DI_DF02M;Diodes;Si; 200V 1.00A 3.00us Diodes Inc. Bridge -- for
one element
.MODEL DI_DF02M D ( IS=4.42n RS=42.0m BV=200 IBV=10.0u
+ CJO=65.0p M=0.333 N=1.70 TT=4.32u )
*SRC=DF02S;DI_DF02S;Diodes;Si; 200V 1.00A 3.00us Diodes Inc. Bridge -- for
one element
.MODEL DI_DF02S D ( IS=4.42n RS=42.0m BV=200 IBV=10.0u
+ CJO=65.0p M=0.333 N=1.70 TT=4.32u )
*SRC=DF04M;DI_DF04M;Diodes;Si; 400V 1.00A 3.00us
one element
.MODEL DI_DF04M D ( IS=4.42n RS=42.0m BV=400 IBV=10.0u
+ CJO=65.0p M=0.333 N=1.70 TT=4.32u )
*SRC=DF04S;DI_DF04S;Diodes;Si; 400V 1.00A 3.00us Diodes Inc. Bridge -- for
one element
.MODEL DI_DF04S D ( IS=4.42n RS=42.0m BV=400 IBV=10.0u
+ CJO=65.0p M=0.333 N=1.70 TT=4.32u )
*SRC=DF06M;DI_DF06M;Diodes;Si; 600V 1.00A 3.00us Diodes Inc. Bridge -- for
one element
.MODEL DI_DF06M D ( IS=4.42n RS=42.0m BV=600 IBV=10.0u
+ CJO=65.0p M=0.333 N=1.70 TT=4.32u )
*SRC=DF06S;DI_DF06S;Diodes;Si; 600V 1.00A 3.00us Diodes Inc. Bridge -- for
one element
.MODEL DI_DF06S D ( IS=4.42n RS=42.0m BV=600 IBV=10.0u
+ CJO=65.0p M=0.333 N=1.70 TT=4.32u )
*SRC=DF08M;DI_DF08M;Diodes;Si; 800V 1.00A 3.00us Diodes Inc. Bridge -- for
one element
.MODEL DI_DF08M D ( IS=4.42n RS=42.0m BV=800 IBV=10.0u
+ CJO=65.0p M=0.333 N=1.70 TT=4.32u )
*SRC=DF08S;DI_DF08S;Diodes;Si; 800V 1.00A 3.00us Diodes Inc. Bridge -- for
one element
.MODEL DI_DF08S D ( IS=4.42n RS=42.0m BV=800 IBV=10.0u
+ CJO=65.0p M=0.333 N=1.70 TT=4.32u )
*SRC=DF10M;DI_DF10M;Diodes;Si; 1.00kV 1.00A 3.00us Diodes Inc. Bridge -- fo
r one element
.MODEL DI_DF10M D ( IS=4.42n RS=42.0m BV=1.00k IBV=10.0u
+ CJO=65.0p M=0.333 N=1.70 TT=4.32u )
*SRC=DF10S;DI_DF10S;Diodes;Si; 1.00kV 1.00A 3.00us Diodes Inc. Bridge -- fo
r one element
.MODEL DI_DF10S D ( IS=4.42n RS=42.0m BV=1.00k IBV=10.0u
+ CJO=65.0p M=0.333 N=1.70 TT=4.32u )
*SRC=DF15005M;DI_DF15005M;Diodes;Si; 50.0V 1.50A 3.00us Diodes Inc. Bridge
-- for one element
.MODEL DI_DF15005M D ( IS=2.06n RS=28.1m BV=50.0 IBV=10.0u
+ CJO=65.0p M=0.333 N=1.70 TT=4.32u )
*SRC=DF15005S;DI_DF15005S;Diodes;Si; 50.0V 1.50A 3.00us Diodes Inc. Bridge
-- for one element
.MODEL DI_DF15005S D ( IS=2.06n RS=28.1m BV=50.0 IBV=10.0u
+ CJO=65.0p M=0.333 N=1.70 TT=4.32u )
*SRC=DF1501M;DI_DF1501M;Diodes;Si; 100V 1.50A 3.00us Diodes Inc. Bridge -for one element
.MODEL DI_DF1501M D ( IS=2.06n RS=28.1m BV=100 IBV=10.0u
+ CJO=65.0p M=0.333 N=1.70 TT=4.32u )
*SRC=DF1501S;DI_DF1501S;Diodes;Si; 100V 1.50A 3.00us Diodes Inc. Bridge -for one element
.MODEL DI_DF1501S D ( IS=2.06n RS=28.1m BV=100 IBV=10.0u
+ CJO=65.0p M=0.333 N=1.70 TT=4.32u )
*SRC=DF1502M;DI_DF1502M;Diodes;Si; 200V 1.50A 3.00us
Diodes Inc.
ectifier--Per Element
.MODEL DI_GBJ2510 D ( IS=379n RS=2.84m BV=1.00k IBV=10.0u
+ CJO=146p M=0.333 N=2.07 TT=4.32u )
*SRC=GBPC3506;DI_GBPC3506;Diodes;Si; 600V 35.0A 3.00us
.MODEL DI_GBPC3506 D ( IS=162u RS=3.32m BV=600 IBV=5.00u
+ CJO=477p M=0.333 N=3.01 TT=4.32u )
*
*
*
*
A
*
*Zetex ZXGD3002E6 Spice Model v2.0 Last Revised 17/09/08
*
.SUBCKT ZXGD3002E6 1 2 3 4 5 6
*pins
Vcc, In1, Gnd, Sink, In2, Source
Q1 1 2 6 ZXGD3002N
Q2 3 5 4 ZXGD3002P
*
.MODEL ZXGD3002N NPN IS=4E-13 BF=550 NF=1 VAF=25 IKF=4.5 ISE=1E-13 NE=1.4
+ BR=120 NR=1 VAR=8 IKR=1.7 ISC=4e-13 NC=1.4 RE=0.010 RB=0.1 RC=0.0085
+ CJE=190E-12 VJE=0.67 MJE=0.345 CJC=47E-12 VJC=0.525 MJC=0.34 TF=0.53E-9 TR=8.6
e-9
+ RCO=0.29 GAMMA=0.8E-9 QUASIMOD=1 XTB=1.4
*
.MODEL ZXGD3002P PNP IS=4E-13 NF=1 BF=510 IKF=3.5 VAF=23 ISE=10E-14 NE=1.49
+ NR=1 BR=97 IKR=1 VAR=4.5 ISC=7.5e-14 NC=1.2 RE=0.0136 RB=0.12 RC=0.0094 RCO=0.
9
+ GAMMA=2.5E-9 CJC=60E-12 MJC=0.33 VJC=0.51 CJE=183E-12 MJE=0.5 VJE=0.9 TF=3.4E10
+ TR=4.5e-9 XTB=1.5 TRE1=.002 TRB1=.002 TRC1=.002 QUASIMOD=1
*
.ENDS ZXGD3002E6
*
*$
*
*
(c) 2008 Diodes Incorporated
*
* The copyright in these models and the designs embodied belong
* to Diodes Incorporated (" Diodes "). They are supplied
* free of charge by Diodes for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Diodes Incorporated, its distributors
* or agents.
*
* Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, US
A
*
*Zetex ZXGD3003E6 Spice Model v2.0 Last Revised 17/09/08
*
.SUBCKT ZXGD3003E6 1 2 3 4 5 6
*pins
Vcc, In1, Gnd, Sink, In2, Source
Q1 1 2 6 ZXGD3003N
Q2 3 5 4 ZXGD3003P
*
.MODEL ZXGD3003N NPN IS=2.5E-13 NF=1 BF=600 IKF=1 VAF=51 ISE=2E-13
+NE=1.4 NR=1 BR=150 IKR=.5 VAR=25 ISC=1e-13 NC=1.47 RB=0.5
+RE=0.055 RC=0.055 CJC=23E-12 MJC=0.33 VJC=0.75 CJE=98E-12 TF=0.8E-9
+TR=30e-9
*
.MODEL ZXGD3003P PNP IS=2e-13 BF=550 XTB=1.4 NF=1 VAF=21 IKF=0.25
*
*Zetex FMMT413 Spice Model v1.0 Last Revised 15/10/04
*
.SUBCKT FMMT413 16 15 14
*Pins_____________C__B__E
Q_Q1
9 8 7 QMOD_1
R_R1
5 6 100
R_R2
5 4 100
R_R3
12 3 100
R_R4
3 1 500
R_R5
10 2 2k
R_R6
10 11 1.5
D_D1
10 5 DZ20
D_D2
4 2 DZ500
D_D3
10 3 DZ200
D_D4
1 2 DZ500
D_D5
7 9 DZ300
C_C1
10 2 20p
S_S1
13 11 2 10 SMOD1
S_S2
9 13 2 10 SMOD2
S_S3
8 10 2 10 SMOD3
V_H1
7 10 0
H1 6 10 V_H1 50
E1 12 10 11 10 10
L_L1
9 16 1nH
L_L2
15 8 2nH
L_L3
10 14 2nH
.model QMOD_1 NPN IS =1.8E-14 ISE=5.0E-14 NF =.9955 NE =1.46
+BF =400 BR =35.5 IKF=.14 IKR=.03 ISC=1.72E-13 NC =1.27 NR =1.005
+RB =.56 RE =.6 RC =.25 VAF=80 VAR=12.5 CJE=13E-12 CJC=4E-12
+VJC=.54 MJC=.33 TF =.64E-9 TR =50.72E-9
.model DZ20 D Is=1E-15 Bv=20 Ibv=100u
.model DZ200 D Is=1E-15 Bv=200 Ibv=100u
.model DZ300 D Is=1E-15 Rs=0.1 Bv=300 Ibv=100u
.model DZ500 D Is=1E-15 N=10 Bv=500 Ibv=100u
.model SMOD1 VSWITCH Roff=1e10 Ron=0.05 Voff=4.3 Von=4.6
.model SMOD2 VSWITCH Roff=1e3 Ron=.5 Voff=4.5 Von=9
.model SMOD3 VSWITCH Roff=1e10 Ron=0.1 Voff=20 Von=25
.ENDS FMMT413
*
*$
*
*
(c) 2005 Zetex Semiconductors plc
*
* The copyright in these models and the designs embodied belong
* to Zetex Semiconductors plc (" Zetex "). They are supplied
* free of charge by Zetex for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Zetex PLC, its distributors
* or agents.
*
* Zetex Semiconductors plc, Zetex Technology Park, Chadderton,
* Oldham, United Kingdom, OL9 9LL
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=14/01/2003
*VERSION=3
*PIN_ORDER
C B E
*
.SUBCKT FMMT415 16 15 14
Q_Q1 9 8 7 Qmod1
R_R1 5 6 100
R_R2 5 4 100
R_R3 12 3 100
R_R4 3 1 500
R_R5 10 2 2k
R_R6 10 11 2
D_D1 10 5 DZ20
D_D2 4 2 DZ500
D_D3 10 3 DZ200
D_D4 1 2 DZ500
D_D5 7 9 DZ300
C_C1 10 2 20p
S_S1 13 11 2 10 Smod1
S_S2 9 13 2 10 Smod2
S_S3 8 10 2 10 Smod3
V_H1 7 10 0
H1 6 10 V_H1 50
E1 12 10 11 10 10
L_L1 9 16 1nH
L_L2 15 8 2nH
L_L3 10 14 2nH
.MODEL Qmod1 NPN IS=3E-14 NF=1 BF=110 IKF=0.4
+VAF=1900 ISE=1E-12 NE=1.6 NR=1 BR=7 IKR=0.2 VAR=75
+ISC=1E-10 NC=1.9 RB=0.4 RE=0.1 RC=0.1 CJC=10.9E-12
+MJC=0.347 VJC=0.476 CJE=82.6E-12 TF=1.3E-9 TR=2.3E-7
.MODEL DZ20 D IS=1E-15 BV=20 IBV=100u
.MODEL DZ200 D IS=1E-15 BV=200 IBV=100u
.MODEL DZ300 D IS=1E-15 RS=0.1 BV=300 IBV=100u
.MODEL DZ500 D IS=1E-15 N=10 BV=500 IBV=100u
.MODEL Smod1 VSWITCH ROFF=1e10 RON=0.1 VOFF=4.3 VON=4.6
.MODEL Smod2 VSWITCH ROFF=1e3 RON=1.0 VOFF=4.5 VON=9
.MODEL Smod3 VSWITCH ROFF=1e10 RON=0.1 VOFF=20 VON=25
.ENDS
*
*$
*
*Zetex FMMT417 Spice Model v2.0 Last Revised 23/03/07
*
.SUBCKT FMMT417 16 15 14
*Pins______________C__B__E
Q_Q1
9 8 7 QMOD_1
R_R1
5 6 100
R_R2
5 4 100
R_R3
12 3 100
R_R4
3 1 500
R_R5
10 2 2k
R_R6
10 11 2
D_D1
10 5 DZ20
D_D2
4 2 DZ500
D_D3
10 3 DZ200
D_D4
1 2 DZ500
D_D5
7 9 DZ350
C_C1
10 2 20p
S_S1
13 11 2 10 SMOD1
S_S2
9 13 2 10 SMOD2
S_S3
8 10 2 10 SMOD3
V_H1
7 10 0
H1 6 10 V_H1 50
E1 12 10 11 10 10
L_L1
9 16 1nH
L_L2
15 8 2nH
L_L3
10 14 2nH
.model QMOD_1 NPN IS =3E-14 NF =1 BF =110 IKF=0.4
+VAF=1900 ISE=1E-12 NE =1.6
+NR =1 BR =7 IKR=0.2 VAR=75 ISC=1e-10 NC =1.9
+RB =0.4 RE =0.1 RC =0.1
+CJC=10.9E-12 MJC=0.347 VJC=0.476 CJE=82.6E-12
+TF =1.3E-9 TR =2.3e-7
.model DZ20 D Is=1E-15 Bv=20 Ibv=100u
.model DZ200 D Is=1E-15 Bv=200 Ibv=100u
.model DZ350 D Is=1E-15 Rs=0.1 Bv=350 Ibv=100u
.model DZ500 D Is=1E-15 N=10 Bv=500 Ibv=100u
.model SMOD1 VSWITCH Roff=1e10 Ron=0.1 Voff=4.3 Von=4.6
.model SMOD2 VSWITCH Roff=1e3 Ron=1.0 Voff=4.5 Von=9
.model SMOD3 VSWITCH Roff=1e10 Ron=0.1 Voff=20 Von=25
.ENDS FMMT417
*
*$
*
*
(c) 2007 Zetex Semiconductors plc
*
* The copyright in these models and the designs embodied belong
* to Zetex Semiconductors plc (" Zetex "). They are supplied
* free of charge by Zetex for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Zetex PLC, its distributors
* or agents.
*
* Zetex Semiconductors plc, Zetex Technology Park, Chadderton,
* Oldham, United Kingdom, OL9 9LL
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=14/01/2003
*VERSION=3
*PIN_ORDER
C B E
*
.SUBCKT ZTX415 16 15 14
Q_Q1 9 8 7 Qmod1
R_R1 5 6 100
R_R2 5 4 100
R_R3 12 3 100
R_R4 3 1 500
R_R5 10 2 2k
R_R6 10 11 2
D_D1 10 5 DZ20
D_D2 4 2 DZ500
D_D3 10 3 DZ200
D_D4 1 2 DZ500
D_D5 7 9 DZ300
C_C1 10 2 20p
S_S1 13 11 2 10 Smod1
S_S2 9 13 2 10 Smod2
S_S3 8 10 2 10 Smod3
V_H1 7 10 0
H1 6 10 V_H1 50
E1 12 10 11 10 10
L_L1 9 16 1nH
L_L2 15 8 2nH
L_L3 10 14 2nH
.MODEL Qmod1 NPN IS=3E-14 NF=1 BF=110 IKF=0.4
+VAF=1900 ISE=1E-12 NE=1.6 NR=1 BR=7 IKR=0.2 VAR=75
+ISC=1E-10 NC=1.9 RB=0.4 RE=0.1 RC=0.1 CJC=10.9E-12
+MJC=0.347 VJC=0.476 CJE=82.6E-12 TF=1.3E-9 TR=2.3E-7
.MODEL DZ20 D IS=1E-15 BV=20 IBV=100u
.MODEL DZ200 D IS=1E-15 BV=200 IBV=100u
.MODEL DZ300 D IS=1E-15 RS=0.1 BV=300 IBV=100u
.MODEL DZ500 D IS=1E-15 N=10 BV=500 IBV=100u
.MODEL Smod1 VSWITCH ROFF=1e10 RON=0.1 VOFF=4.3 VON=4.6
.MODEL Smod2 VSWITCH ROFF=1e3 RON=1.0 VOFF=4.5 VON=9
.MODEL Smod3 VSWITCH ROFF=1e10 RON=0.1 VOFF=20 VON=25
.ENDS
*
*$
********************************************************************************
**********************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
*SRC=DCX114EH;DI_DCX114EH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBT
s
.MODEL DI_DCX114EH PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )
********************************************************************************
************************************************
********************************************************************************
*******************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
*SRC=DCX114EH;DI_DCX114EH;BJTs NPN; Si; 50.0V 0.150A 200MHz
s
.MODEL DI_DCX114EH NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
********************************************************************************
**********************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
*SRC=DCX114EU;DI_DCX114EU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBT
s
.MODEL DI_DCX114EU PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )
********************************************************************************
************************************************
********************************************************************************
*******************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
********************************************************************************
**********************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
*SRC=DCX114TH;DI_DCX114TH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBT
s
.MODEL DI_DCX114TH PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )
********************************************************************************
************************************************
********************************************************************************
*******************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
*SRC=DCX114TH;DI_DCX114TH;BJTs NPN; Si; 50.0V 0.150A 200MHz
s
.MODEL DI_DCX114TH NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )*********
********************************************************************************
**********************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
*SRC=DCX114TK;DI_DCX114TK;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBT
s
.MODEL DI_DCX114TK PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )
********************************************************************************
************************************************
********************************************************************************
*******************************************************
********************************************************************************
**********************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
*SRC=DCX114TU;DI_DCX114TU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBT
s
.MODEL DI_DCX114TU PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )
********************************************************************************
************************************************
********************************************************************************
*******************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
*SRC=DCX114TU;DI_DCX114TU;BJTs NPN; Si; 50.0V 0.150A 200MHz
s
.MODEL DI_DCX114TU NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )*********
********************************************************************************
**********************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
*SRC=DCX114YH;DI_DCX114YH;BJTs PNP; Si; 50.0V 0.150A 200MHz
s
.MODEL DI_DCX114YH PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
********************************************************************************
**********************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
*SRC=DCX114YK;DI_DCX114YK;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBT
s
.MODEL DI_DCX114YK PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )
********************************************************************************
************************************************
********************************************************************************
*******************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
*SRC=DCX114YK;DI_DCX114YK;BJTs NPN; Si; 50.0V 0.150A 200MHz
s
.MODEL DI_DCX114YK NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )*********
********************************************************************************
**********************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
********************************************************************************
**********************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
*SRC=DCX122LH;DI_DCX122LH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBT
s
.MODEL DI_DCX122LH PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )
********************************************************************************
************************************************
********************************************************************************
*******************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
*SRC=DCX122LH;DI_DCX122LH;BJTs NPN; Si; 50.0V 0.150A 200MHz
s
.MODEL DI_DCX122LH NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )*********
********************************************************************************
**********************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
*SRC=DCX122TH;DI_DCX122TH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBT
s
.MODEL DI_DCX122TH PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )
********************************************************************************
************************************************
********************************************************************************
*******************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
*SRC=DCX122TH;DI_DCX122TH;BJTs NPN; Si; 50.0V 0.150A 200MHz
s
.MODEL DI_DCX122TH NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )*********
********************************************************************************
**********************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
*SRC=DCX123JH;DI_DCX123JH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBT
s
.MODEL DI_DCX123JH PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )
********************************************************************************
************************************************
********************************************************************************
*******************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
*SRC=DCX123JH;DI_DCX123JH;BJTs NPN; Si; 50.0V 0.150A 200MHz
s
.MODEL DI_DCX123JH NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+
+
+
+
********************************************************************************
**********************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
*SRC=DCX123JK;DI_DCX123JK;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBT
s
.MODEL DI_DCX123JK PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )
********************************************************************************
************************************************
********************************************************************************
*******************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
*SRC=DCX123JK;DI_DCX123JK;BJTs NPN; Si; 50.0V 0.150A 200MHz
s
.MODEL DI_DCX123JK NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )*********
********************************************************************************
**********************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
*SRC=DCX123JU;DI_DCX123JU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBT
s
.MODEL DI_DCX123JU PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )
********************************************************************************
************************************************
********************************************************************************
*******************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
*SRC=DCX123JU;DI_DCX123JU;BJTs NPN; Si; 50.0V 0.150A 200MHz
s
.MODEL DI_DCX123JU NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )*********
********************************************************************************
**********************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
*SRC=DCX124EH;DI_DCX124EH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBT
s
.MODEL DI_DCX124EH PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )
********************************************************************************
************************************************
********************************************************************************
*******************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
*SRC=DCX124EH;DI_DCX124EH;BJTs NPN; Si; 50.0V 0.150A 200MHz
s
.MODEL DI_DCX124EH NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )*********
********************************************************************************
**********************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
*SRC=DCX124EK;DI_DCX124EK;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBT
s
.MODEL DI_DCX124EK PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )
********************************************************************************
************************************************
********************************************************************************
*******************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
*SRC=DCX124EK;DI_DCX124EK;BJTs NPN; Si; 50.0V 0.150A 200MHz
s
.MODEL DI_DCX124EK NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )*********
********************************************************************************
**********************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
*SRC=DCX124EU;DI_DCX124EU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBT
s
.MODEL DI_DCX124EU PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )
********************************************************************************
************************************************
********************************************************************************
*******************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
*SRC=DCX124EU;DI_DCX124EU;BJTs NPN; Si; 50.0V 0.150A 200MHz
s
.MODEL DI_DCX124EU NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )*********
********************************************************************************
**********************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
*SRC=DCX142JH;DI_DCX142JH;BJTs PNP; Si; 50.0V 0.150A 200MHz
s
********************************************************************************
**********************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
*SRC=DCX142TH;DI_DCX142TH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBT
s
.MODEL DI_DCX142TH PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )
********************************************************************************
************************************************
********************************************************************************
*******************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
*SRC=DCX142TH;DI_DCX142TH;BJTs NPN; Si; 50.0V 0.150A 200MHz
s
.MODEL DI_DCX142TH NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )*********
********************************************************************************
**********************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
*SRC=DCX143EH;DI_DCX143EH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBT
s
.MODEL DI_DCX143EH PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )
********************************************************************************
************************************************
********************************************************************************
*******************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
*SRC=DCX143EH;DI_DCX143EH;BJTs NPN; Si; 50.0V 0.150A 200MHz
s
.MODEL DI_DCX143EH NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )*********
********************************************************************************
**********************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
*SRC=DCX143TH;DI_DCX143TH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBT
s
.MODEL DI_DCX143TH PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )
********************************************************************************
************************************************
********************************************************************************
*******************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
*SRC=DCX143TH;DI_DCX143TH;BJTs NPN; Si; 50.0V 0.150A 200MHz
s
.MODEL DI_DCX143TH NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
********************************************************************************
**********************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
*SRC=DCX143TU;DI_DCX143TU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBT
s
.MODEL DI_DCX143TU PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )
********************************************************************************
************************************************
********************************************************************************
*******************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
********************************************************************************
**********************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
*SRC=DCX144EH;DI_DCX144EH;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBT
s
.MODEL DI_DCX144EH PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )
********************************************************************************
************************************************
********************************************************************************
*******************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
*SRC=DCX144EH;DI_DCX144EH;BJTs NPN; Si; 50.0V 0.150A 200MHz
s
.MODEL DI_DCX144EH NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )*********
********************************************************************************
**********************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
*SRC=DCX144EK;DI_DCX144EK;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBT
s
.MODEL DI_DCX144EK PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )
********************************************************************************
************************************************
********************************************************************************
*******************************************************
********************************************************************************
**********************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
*SRC=DCX144EU;DI_DCX144EU;BJTs PNP; Si; 50.0V 0.150A 200MHz Diodes Inc. PBT
s
.MODEL DI_DCX144EU PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )
********************************************************************************
************************************************
********************************************************************************
*******************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
*SRC=DCX144EU;DI_DCX144EU;BJTs NPN; Si; 50.0V 0.150A 200MHz
s
.MODEL DI_DCX144EU NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )*********
+
+
+
+
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
*SRC=DDA122LU;DI_DDA122LU;BJTs PNP; Si; 50.0V 0.150A 200MHz
s
.MODEL DI_DDA122LU PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )
s
.MODEL DI_DDA142JH PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain to
add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
*SRC=DDA142JU;DI_DDA142JU;BJTs PNP; Si; 50.0V 0.150A 200MHz
s
.MODEL DI_DDA142JU PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )
********************************************************************************
**********************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
*SRC=DDC114EH;DI_DDC114EH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBT
s
.MODEL DI_DDC114EH NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )
********************************************************************************
*********************************************************
********************************************************************************
**********************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
*SRC=DDC114EU;DI_DDC114EU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBT
s
.MODEL DI_DDC114EU NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )
********************************************************************************
*********************************************************
********************************************************************************
**********************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
**********************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
*SRC=DDC122TU;DI_DDC122TU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBT
s
.MODEL DI_DDC122TU NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )
********************************************************************************
*********************************************************
********************************************************************************
**********************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
*SRC=DDC123JH;DI_DDC123JH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBT
s
.MODEL DI_DDC123JH NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )
********************************************************************************
*********************************************************
********************************************************************************
**********************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
*SRC=DDC123JU;DI_DDC123JU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBT
s
.MODEL DI_DDC123JU NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )
********************************************************************************
*********************************************************
********************************************************************************
**********************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
**********************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
*SRC=DDC143TH;DI_DDC143TH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBT
s
.MODEL DI_DDC143TH NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )
********************************************************************************
*********************************************************
********************************************************************************
**********************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
*SRC=DDC143TU;DI_DDC143TU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBT
s
.MODEL DI_DDC143TU NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )
********************************************************************************
*********************************************************
********************************************************************************
**********************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
*SRC=DDC144EH;DI_DDC144EH;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. PBT
s
.MODEL DI_DDC144EH NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )
********************************************************************************
*********************************************************
********************************************************************************
**********************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
Diodes Inc.
Diodes Inc. P
Diodes Inc.
Diodes Inc.
Diodes Inc.
Diodes Inc. P
Diodes Inc.
Diodes Inc.
Diodes Inc.
Diodes Inc. P
Diodes Inc.
Diodes Inc.
Diodes Inc.
Diodes Inc. P
Diodes Inc. P
Diodes Inc.
Diodes Inc.
Diodes Inc. P
+
+
+
+
Diodes Inc.
Diodes Inc.
Diodes Inc.
Diodes Inc. P
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
*SRC=DDTA114WKA;DI_DDTA114WKA;BJTs PNP; Si; 50.0V 0.150A 200MHz
PBTs
.MODEL DI_DDTA114WKA PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )
Diodes Inc.
Diodes Inc.
Diodes Inc.
Diodes Inc. P
Diodes Inc.
Diodes Inc.
Diodes Inc.
Diodes Inc. P
Diodes Inc.
Diodes Inc.
Diodes Inc.
Diodes Inc. P
Diodes Inc. P
Diodes Inc.
Diodes Inc.
Diodes Inc. P
Diodes Inc.
Diodes Inc.
add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
*SRC=DDTA122LE;DI_DDTA122LE;BJTs PNP; Si; 50.0V 0.150A 200MHz
BTs
.MODEL DI_DDTA122LE PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )
Diodes Inc. P
Diodes Inc. P
Diodes Inc. P
Diodes Inc. P
Diodes Inc.
Diodes Inc. P
Diodes Inc.
Diodes Inc.
Diodes Inc.
Diodes Inc. P
Diodes Inc.
Diodes Inc.
Diodes Inc.
Diodes Inc. P
Diodes Inc.
Diodes Inc.
Diodes Inc.
Diodes Inc. P
Diodes Inc.
+
+
+
+
Diodes Inc.
Diodes Inc.
Diodes Inc. P
Diodes Inc.
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
*SRC=DDTA124EUA;DI_DDTA124EUA;BJTs PNP; Si; 50.0V 0.150A 200MHz
PBTs
.MODEL DI_DDTA124EUA PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )
Diodes Inc.
Diodes Inc.
Diodes Inc. P
Diodes Inc. P
Diodes Inc.
Diodes Inc.
Diodes Inc. P
Diodes Inc.
Diodes Inc.
Diodes Inc.
PBTs
.MODEL DI_DDTA124XCA PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain to
add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
*SRC=DDTA124XE;DI_DDTA124XE;BJTs PNP; Si; 50.0V 0.150A 200MHz
BTs
.MODEL DI_DDTA124XE PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )
Diodes Inc. P
Diodes Inc.
Diodes Inc.
Diodes Inc.
Diodes Inc. P
Diodes Inc.
Diodes Inc.
Diodes Inc. P
Diodes Inc. P
Diodes Inc. P
Diodes Inc. P
Diodes Inc.
Diodes Inc. P
Diodes Inc.
Diodes Inc.
Diodes Inc.
Diodes Inc. P
Diodes Inc.
Diodes Inc.
Diodes Inc.
Diodes Inc. P
Diodes Inc.
Diodes Inc.
Diodes Inc.
Diodes Inc. P
Diodes Inc.
Diodes Inc.
add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
*SRC=DDTA143ZCA;DI_DDTA143ZCA;BJTs PNP; Si; 50.0V 0.150A 200MHz
PBTs
.MODEL DI_DDTA143ZCA PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )
Diodes Inc.
Diodes Inc. P
Diodes Inc.
Diodes Inc.
Diodes Inc.
Diodes Inc. P
Diodes Inc.
Diodes Inc.
Diodes Inc.
Diodes Inc. P
Diodes Inc. P
Diodes Inc.
Diodes Inc.
Diodes Inc. P
Diodes Inc.
Diodes Inc.
Diodes Inc.
Diodes Inc. P
Diodes Inc.
+
+
+
+
Diodes Inc.
Diodes Inc.
Diodes Inc. P
Diodes Inc.
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
*SRC=DDTA144WUA;DI_DDTA144WUA;BJTs PNP; Si; 50.0V 0.150A 200MHz
PBTs
.MODEL DI_DDTA144WUA PNP (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )
Diodes Inc.
********************************************************************************
******************************************************
Note: The following SPICE model is for the transistor element. When applying th
is SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sh
eet. Allow +/- 30% resistance tolerance and +/20% for R2/R1 ratio tolerance.
*SRC=DDTB113EC;DI_DDTB113EC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. P
BTs
.MODEL DI_DDTB113EC PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
********************************************************************************
**********************************************
********************************************************************************
******************************************************
Note: The following SPICE model is for the transistor element. When applying th
is SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sh
eet. Allow +/- 30% resistance tolerance and +/20% for R2/R1 ratio tolerance.
*SRC=DDTB113EU;DI_DDTB113EU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. P
BTs
.MODEL DI_DDTB113EU PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
********************************************************************************
**********************************************
********************************************************************************
******************************************************
Note: The following SPICE model is for the transistor element. When applying th
is SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sh
eet. Allow +/- 30% resistance tolerance and +/20% for R2/R1 ratio tolerance.
*SRC=DDTB113ZC;DI_DDTB113ZC;BJTs PNP; Si; 32.0V 0.500A 220MHz
BTs
.MODEL DI_DDTB113ZC PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
Diodes Inc. P
Note: The following SPICE model is for the transistor element. When applying th
is SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sh
eet. Allow +/- 30% resistance tolerance and +/20% for R2/R1 ratio tolerance.
*SRC=DDTB114GC;DI_DDTB114GC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. P
BTs
.MODEL DI_DDTB114GC PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
********************************************************************************
**********************************************
********************************************************************************
******************************************************
Note: The following SPICE model is for the transistor element. When applying th
is SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sh
eet. Allow +/- 30% resistance tolerance and +/20% for R2/R1 ratio tolerance.
*SRC=DDTB114GU;DI_DDTB114GU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. P
BTs
.MODEL DI_DDTB114GU PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
********************************************************************************
**********************************************
********************************************************************************
******************************************************
Note: The following SPICE model is for the transistor element. When applying th
is SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sh
eet. Allow +/- 30% resistance tolerance and +/20% for R2/R1 ratio tolerance.
*SRC=DDTB114TC;DI_DDTB114TC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. P
BTs
.MODEL DI_DDTB114TC PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
********************************************************************************
**********************************************
********************************************************************************
******************************************************
Note: The following SPICE model is for the transistor element. When applying th
is SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sh
eet. Allow +/- 30% resistance tolerance and +/20% for R2/R1 ratio tolerance.
Diodes Inc. P
Note: The following SPICE model is for the transistor element. When applying th
is SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sh
eet. Allow +/- 30% resistance tolerance and +/20% for R2/R1 ratio tolerance.
*SRC=DDTB123EC;DI_DDTB123EC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. P
BTs
.MODEL DI_DDTB123EC PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
********************************************************************************
**********************************************
********************************************************************************
******************************************************
Note: The following SPICE model is for the transistor element. When applying th
is SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sh
eet. Allow +/- 30% resistance tolerance and +/20% for R2/R1 ratio tolerance.
*SRC=DDTB123EU;DI_DDTB123EU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. P
BTs
.MODEL DI_DDTB123EU PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
********************************************************************************
**********************************************
********************************************************************************
******************************************************
Note: The following SPICE model is for the transistor element. When applying th
is SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sh
eet. Allow +/- 30% resistance tolerance and +/20% for R2/R1 ratio tolerance.
*SRC=DDTB123TC;DI_DDTB123TC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. P
BTs
.MODEL DI_DDTB123TC PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
********************************************************************************
**********************************************
********************************************************************************
******************************************************
Note: The following SPICE model is for the transistor element. When applying th
is SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sh
eet. Allow +/- 30% resistance tolerance and +/20% for R2/R1 ratio tolerance.
Diodes Inc. P
Note: The following SPICE model is for the transistor element. When applying th
is SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sh
eet. Allow +/- 30% resistance tolerance and +/20% for R2/R1 ratio tolerance.
*SRC=DDTB142TC;DI_DDTB142TC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. P
BTs
.MODEL DI_DDTB142TC PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
********************************************************************************
**********************************************
********************************************************************************
******************************************************
Note: The following SPICE model is for the transistor element. When applying th
is SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sh
eet. Allow +/- 30% resistance tolerance and +/20% for R2/R1 ratio tolerance.
*SRC=DDTB142TU;DI_DDTB142TU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. P
BTs
.MODEL DI_DDTB142TU PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
********************************************************************************
**********************************************
********************************************************************************
******************************************************
Note: The following SPICE model is for the transistor element. When applying th
is SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sh
eet. Allow +/- 30% resistance tolerance and +/20% for R2/R1 ratio tolerance.
*SRC=DDTB143EC;DI_DDTB143EC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. P
BTs
.MODEL DI_DDTB143EC PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
********************************************************************************
**********************************************
********************************************************************************
******************************************************
Note: The following SPICE model is for the transistor element. When applying th
is SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sh
eet. Allow +/- 30% resistance tolerance and +/20% for R2/R1 ratio tolerance.
Diodes Inc.
Diodes Inc. P
Diodes Inc.
*SRC=DDTA113TLP;;BJTs PNP; Si; 50.0V 0.100A 250MHz Diodes, Inc. .MODEL PNP (IS=10.2f NF=1.00 BF=415 VAF=127
+ IKF=74.6m ISE=82.5f NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.120 RE=0.615 RB=2.46 RC=0.246
+ XTB=1.5 CJE=30.8p VJE=1.10 MJE=0.500 CJC=9.94p VJC=0.300
+ MJC=0.300 TF=479p TR=97.1n EG=1.12 )
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain to
add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
*SRC=DDTC113TUA;DI_DDTC113TUA;BJTs NPN; Si; 50.0V 0.150A 200MHz
PBTs
.MODEL DI_DDTC113TUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )
Diodes Inc.
Diodes Inc.
add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
*SRC=DDTC113ZE;DI_DDTC113ZE;BJTs NPN; Si; 50.0V 0.150A 200MHz
BTs
.MODEL DI_DDTC113ZE NPN (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )
Diodes Inc. P
Diodes Inc.
Diodes Inc.
Diodes Inc. P
********************************************************************************
**********************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
*SRC=DDTC114EKA;DI_DDTC114EKA;BJTs NPN; Si; 50.0V 0.150A 200MHz
PBTs
Diodes Inc.
*********************************************************
********************************************************************************
**********************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
*SRC=DDTC114GUA;DI_DDTC114GUA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc.
PBTs
.MODEL DI_DDTC114GUA NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )
********************************************************************************
*********************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain to
add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
*SRC=DDTC114TCA;DI_DDTC114TCA;BJTs NPN; Si; 50.0V 0.150A 200MHz
PBTs
.MODEL DI_DDTC114TCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )
Diodes Inc.
Diodes Inc. P
Diodes Inc.
Diodes Inc.
Diodes Inc.
Diodes Inc. P
Diodes Inc.
Diodes Inc.
Diodes Inc.
Diodes Inc. P
Diodes Inc.
Diodes Inc.
Diodes Inc. P
********************************************************************************
**********************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
*SRC=DDTC115EKA;DI_DDTC115EKA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc.
PBTs
.MODEL DI_DDTC115EKA NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )
********************************************************************************
*********************************************************
********************************************************************************
**********************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
*SRC=DDTC115EUA;DI_DDTC115EUA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc.
PBTs
.MODEL DI_DDTC115EUA NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )
********************************************************************************
*********************************************************
********************************************************************************
**********************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
*SRC=DDTC115GE;DI_DDTC115GE;BJTs NPN; Si; 50.0V 0.150A 200MHz
BTs
.MODEL DI_DDTC115GE NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )
Diodes Inc. P
********************************************************************************
*********************************************************
********************************************************************************
**********************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
*SRC=DDTC115GKA;DI_DDTC115GKA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc.
PBTs
.MODEL DI_DDTC115GKA NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )
********************************************************************************
*********************************************************
********************************************************************************
**********************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
*SRC=DDTC115GUA;DI_DDTC115GUA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc.
PBTs
.MODEL DI_DDTC115GUA NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )
********************************************************************************
*********************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain to
add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
*SRC=DDTC115TCA;DI_DDTC115TCA;BJTs NPN; Si; 50.0V 0.150A 200MHz
PBTs
.MODEL DI_DDTC115TCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )
Diodes Inc.
Diodes Inc. P
+
+
+
+
Diodes Inc.
Diodes Inc.
********************************************************************************
**********************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
*SRC=DDTC122LE;DI_DDTC122LE;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. P
BTs
.MODEL DI_DDTC122LE NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )
********************************************************************************
*********************************************************
********************************************************************************
**********************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
*SRC=DDTC122LU;DI_DDTC122LU;BJTs NPN; Si; 50.0V 0.150A 200MHz
BTs
.MODEL DI_DDTC122LU NPN (IS=16.8f NF=1.00 BF=766 VAF=127
Diodes Inc. P
Diodes Inc. P
********************************************************************************
**********************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
*SRC=DDTC123EKA;DI_DDTC123EKA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc.
PBTs
.MODEL DI_DDTC123EKA NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )
********************************************************************************
*********************************************************
********************************************************************************
**********************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
*SRC=DDTC123EUA;DI_DDTC123EUA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc.
PBTs
.MODEL DI_DDTC123EUA NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )
********************************************************************************
*********************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain to
add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
*SRC=DDTC123JCA;DI_DDTC123JCA;BJTs NPN; Si; 50.0V 0.150A 200MHz
PBTs
.MODEL DI_DDTC123JCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )
Diodes Inc.
Diodes Inc. P
add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
*SRC=DDTC123JKA;DI_DDTC123JKA;BJTs NPN; Si; 50.0V 0.150A 200MHz
PBTs
.MODEL DI_DDTC123JKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )
Diodes Inc.
Diodes Inc.
Diodes Inc.
Diodes Inc. P
Diodes Inc.
Diodes Inc.
Diodes Inc.
Diodes Inc. P
Diodes Inc.
Diodes Inc.
Diodes Inc. P
********************************************************************************
**********************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
*SRC=DDTC144EKA;DI_DDTC144EKA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc.
PBTs
.MODEL DI_DDTC144EKA NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )
********************************************************************************
*********************************************************
********************************************************************************
**********************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
*SRC=DDTC124EUA;DI_DDTC124EUA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc.
PBTs
.MODEL DI_DDTC124EUA NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )
********************************************************************************
*********************************************************
********************************************************************************
**********************************************************
Note: The following SPICE model is for the transistor element.
Diodes Inc.
Diodes Inc. P
Diodes Inc.
Diodes Inc.
Diodes Inc.
Diodes Inc. P
Diodes Inc.
Diodes Inc.
Diodes Inc.
Diodes Inc. P
Diodes Inc.
Diodes Inc.
********************************************************************************
**********************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
*SRC=DDTC142JE;DI_DDTC142JE;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. P
BTs
.MODEL DI_DDTC142JE NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )
********************************************************************************
*********************************************************
********************************************************************************
**********************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
*SRC=DDTC142JU;DI_DDTC142JU;BJTs NPN; Si; 50.0V 0.150A 200MHz
BTs
.MODEL DI_DDTC142JU NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )
Diodes Inc. P
********************************************************************************
*********************************************************
********************************************************************************
**********************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
*SRC=DDTC142TE;DI_DDTC142TE;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. P
BTs
.MODEL DI_DDTC142TE NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )
********************************************************************************
*********************************************************
********************************************************************************
**********************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
*SRC=DDTC142TU;DI_DDTC142TU;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc. P
BTs
.MODEL DI_DDTC142TU NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )
********************************************************************************
*********************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain to
add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
*SRC=DDTC143EE;DI_DDTC143EE;BJTs NPN; Si; 50.0V 0.150A 200MHz
BTs
.MODEL DI_DDTC143EE NPN (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )
Diodes Inc. P
********************************************************************************
**********************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
Diodes Inc.
Diodes Inc. P
Diodes Inc.
PBTs
.MODEL DI_DDTC143FKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain to
add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
*SRC=DDTC143FUA;DI_DDTC143FUA;BJTs NPN; Si; 50.0V 0.150A 200MHz
PBTs
.MODEL DI_DDTC143FUA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )
Diodes Inc.
Diodes Inc.
Diodes Inc. P
Diodes Inc.
Diodes Inc.
Diodes Inc.
Diodes Inc. P
Diodes Inc.
Diodes Inc.
Diodes Inc.
Diodes Inc. P
Diodes Inc.
Diodes Inc.
Diodes Inc. P
********************************************************************************
**********************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
*SRC=DDTC144EKA;DI_DDTC144EKA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc.
PBTs
.MODEL DI_DDTC144EKA NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )
********************************************************************************
*********************************************************
********************************************************************************
**********************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
*SRC=DDTC144EUA;DI_DDTC144EUA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc.
PBTs
.MODEL DI_DDTC144EUA NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )
********************************************************************************
*********************************************************
********************************************************************************
**********************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
*SRC=DDTC144GE;DI_DDTC144GE;BJTs NPN; Si; 50.0V 0.150A 200MHz
BTs
.MODEL DI_DDTC144GE NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )
Diodes Inc. P
********************************************************************************
*********************************************************
********************************************************************************
**********************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
*SRC=DDTC144GKA;DI_DDTC144GKA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc.
PBTs
.MODEL DI_DDTC144GKA NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )
********************************************************************************
*********************************************************
********************************************************************************
**********************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain
to add R1 and/or R2 values per the table found on sheet 1 of the data
sheet. Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio
tolerance.
*SRC=DDTC144GUA;DI_DDTC144GUA;BJTs NPN; Si; 50.0V 0.150A 200MHz Diodes Inc.
PBTs
.MODEL DI_DDTC144GUA NPN (IS=16.8f NF=1.00 BF=766 VAF=127
+ IKF=91.1m ISE=3.59p NE=2.00 BR=4.00 NR=1.00
+ VAR=28.0 IKR=0.225 RE=0.665 RB=2.66 RC=0.266
+ XTB=1.5 CJE=11.3p VJE=1.10 MJE=0.500 CJC=4.50p VJC=0.300
+ MJC=0.300 TF=549p TR=119n EG=1.12 )
********************************************************************************
*********************************************************
Note: The following SPICE model is for the transistor element.
When applying this SPICE model to your circuit simulation be certain to
add R1 and/or R2 values per the table found on sheet 1 of the data sheet.
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
*SRC=DDTC144TCA;DI_DDTC144TCA;BJTs NPN; Si; 50.0V 0.150A 200MHz
PBTs
.MODEL DI_DDTC144TCA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )
Diodes Inc.
Diodes Inc. P
+
+
+
+
Diodes Inc.
Diodes Inc.
Diodes Inc.
Diodes Inc. P
Allow +/- 30% resistance tolerance and +/- 20% for R2/R1 ratio tolerance.
*SRC=DDTC144VKA;DI_DDTC144VKA;BJTs NPN; Si; 50.0V 0.150A 200MHz
PBTs
.MODEL DI_DDTC144VKA NPN (IS=9.98f NF=1.00 BF=766 VAF=127
+ IKF=54.7m ISE=2.14p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=0.135 RE=0.815 RB=3.26 RC=0.326
+ XTB=1.5 CJE=20.7p VJE=1.10 MJE=0.500 CJC=11.4p VJC=0.300
+ MJC=0.300 TF=567p TR=119n EG=1.12 )
Diodes Inc.
Diodes Inc.
Diodes Inc.
Diodes Inc. P
Diodes Inc.
Diodes Inc.
********************************************************************************
******************************************************
Note: The following SPICE model is for the transistor element. When applying th
is SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sh
eet. Allow +/- 30% resistance tolerance and +/20% for R2/R1 ratio tolerance.
*SRC=DDTD113EC;DI_DDTD113EC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. P
BTs
.MODEL DI_DDTD113EC PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
********************************************************************************
**********************************************
********************************************************************************
******************************************************
Note: The following SPICE model is for the transistor element. When applying th
is SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sh
eet. Allow +/- 30% resistance tolerance and +/20% for R2/R1 ratio tolerance.
*SRC=DDTD113EU;DI_DDTD113EU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. P
BTs
.MODEL DI_DDTD113EU PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
********************************************************************************
**********************************************
********************************************************************************
******************************************************
Note: The following SPICE model is for the transistor element. When applying th
is SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sh
eet. Allow +/- 30% resistance tolerance and +/20% for R2/R1 ratio tolerance.
*SRC=DDTD113ZC;DI_DDTD113ZC;BJTs PNP; Si; 32.0V 0.500A 220MHz
Diodes Inc. P
BTs
.MODEL DI_DDTD113ZC PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
********************************************************************************
**********************************************
********************************************************************************
******************************************************
Note: The following SPICE model is for the transistor element. When applying th
is SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sh
eet. Allow +/- 30% resistance tolerance and +/20% for R2/R1 ratio tolerance.
*SRC=DDTD113ZU;DI_DDTD113ZU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. P
BTs
.MODEL DI_DDTD113ZU PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
********************************************************************************
**********************************************
********************************************************************************
******************************************************
Note: The following SPICE model is for the transistor element. When applying th
is SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sh
eet. Allow +/- 30% resistance tolerance and +/20% for R2/R1 ratio tolerance.
*SRC=DDTD114EC;DI_DDTD114EC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. P
BTs
.MODEL DI_DDTD114EC PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
********************************************************************************
**********************************************
********************************************************************************
******************************************************
Note: The following SPICE model is for the transistor element. When applying th
is SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sh
eet. Allow +/- 30% resistance tolerance and +/20% for R2/R1 ratio tolerance.
*SRC=DDTD114EU;DI_DDTD114EU;BJTs PNP; Si; 32.0V 0.500A 220MHz
BTs
.MODEL DI_DDTD114EU PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
Diodes Inc. P
********************************************************************************
**********************************************
********************************************************************************
******************************************************
Note: The following SPICE model is for the transistor element. When applying th
is SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sh
eet. Allow +/- 30% resistance tolerance and +/20% for R2/R1 ratio tolerance.
*SRC=DDTD114GC;DI_DDTD114GC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. P
BTs
.MODEL DI_DDTD114GC PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
********************************************************************************
**********************************************
********************************************************************************
******************************************************
Note: The following SPICE model is for the transistor element. When applying th
is SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sh
eet. Allow +/- 30% resistance tolerance and +/20% for R2/R1 ratio tolerance.
*SRC=DDTD114GU;DI_DDTD114GU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. P
BTs
.MODEL DI_DDTD114GU PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
********************************************************************************
**********************************************
********************************************************************************
******************************************************
Note: The following SPICE model is for the transistor element. When applying th
is SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sh
eet. Allow +/- 30% resistance tolerance and +/20% for R2/R1 ratio tolerance.
*SRC=DDTD114TC;DI_DDTD114TC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. P
BTs
.MODEL DI_DDTD114TC PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
********************************************************************************
**********************************************
********************************************************************************
******************************************************
Note: The following SPICE model is for the transistor element. When applying th
Diodes Inc. P
BTs
.MODEL DI_DDTD122LC PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
********************************************************************************
**********************************************
********************************************************************************
******************************************************
Note: The following SPICE model is for the transistor element. When applying th
is SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sh
eet. Allow +/- 30% resistance tolerance and +/20% for R2/R1 ratio tolerance.
*SRC=DDTD122LU;DI_DDTD122LU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. P
BTs
.MODEL DI_DDTD122LU PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
********************************************************************************
**********************************************
********************************************************************************
******************************************************
Note: The following SPICE model is for the transistor element. When applying th
is SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sh
eet. Allow +/- 30% resistance tolerance and +/20% for R2/R1 ratio tolerance.
*SRC=DDTD122TC;DI_DDTD122TC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. P
BTs
.MODEL DI_DDTD122TC PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
********************************************************************************
**********************************************
********************************************************************************
******************************************************
Note: The following SPICE model is for the transistor element. When applying th
is SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sh
eet. Allow +/- 30% resistance tolerance and +/20% for R2/R1 ratio tolerance.
*SRC=DDTD122TU;DI_DDTD122TU;BJTs PNP; Si; 32.0V 0.500A 220MHz
BTs
.MODEL DI_DDTD122TU PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
Diodes Inc. P
********************************************************************************
**********************************************
********************************************************************************
******************************************************
Note: The following SPICE model is for the transistor element. When applying th
is SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sh
eet. Allow +/- 30% resistance tolerance and +/20% for R2/R1 ratio tolerance.
*SRC=DDTD123EC;DI_DDTD123EC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. P
BTs
.MODEL DI_DDTD123EC PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
********************************************************************************
**********************************************
********************************************************************************
******************************************************
Note: The following SPICE model is for the transistor element. When applying th
is SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sh
eet. Allow +/- 30% resistance tolerance and +/20% for R2/R1 ratio tolerance.
*SRC=DDTD123EU;DI_DDTD123EU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. P
BTs
.MODEL DI_DDTD123EU PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
********************************************************************************
**********************************************
********************************************************************************
******************************************************
Note: The following SPICE model is for the transistor element. When applying th
is SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sh
eet. Allow +/- 30% resistance tolerance and +/20% for R2/R1 ratio tolerance.
*SRC=DDTD123TC;DI_DDTD123TC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. P
BTs
.MODEL DI_DDTD123TC PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
********************************************************************************
**********************************************
********************************************************************************
******************************************************
Note: The following SPICE model is for the transistor element. When applying th
Diodes Inc. P
BTs
.MODEL DI_DDTD133HC PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
********************************************************************************
**********************************************
********************************************************************************
******************************************************
Note: The following SPICE model is for the transistor element. When applying th
is SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sh
eet. Allow +/- 30% resistance tolerance and +/20% for R2/R1 ratio tolerance.
*SRC=DDTD133HU;DI_DDTD133HU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. P
BTs
.MODEL DI_DDTD133HU PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
********************************************************************************
**********************************************
********************************************************************************
******************************************************
Note: The following SPICE model is for the transistor element. When applying th
is SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sh
eet. Allow +/- 30% resistance tolerance and +/20% for R2/R1 ratio tolerance.
*SRC=DDTD142JC;DI_DDTD142JC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. P
BTs
.MODEL DI_DDTD142JC PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
********************************************************************************
**********************************************
********************************************************************************
******************************************************
Note: The following SPICE model is for the transistor element. When applying th
is SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sh
eet. Allow +/- 30% resistance tolerance and +/20% for R2/R1 ratio tolerance.
*SRC=DDTD142JU;DI_DDTD142JU;BJTs PNP; Si; 32.0V 0.500A 220MHz
BTs
.MODEL DI_DDTD142JU PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
Diodes Inc. P
********************************************************************************
**********************************************
********************************************************************************
******************************************************
Note: The following SPICE model is for the transistor element. When applying th
is SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sh
eet. Allow +/- 30% resistance tolerance and +/20% for R2/R1 ratio tolerance.
*SRC=DDTD142TC;DI_DDTD142TC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. P
BTs
.MODEL DI_DDTD142TC PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
********************************************************************************
**********************************************
********************************************************************************
******************************************************
Note: The following SPICE model is for the transistor element. When applying th
is SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sh
eet. Allow +/- 30% resistance tolerance and +/20% for R2/R1 ratio tolerance.
*SRC=DDTD142TU;DI_DDTD142TU;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. P
BTs
.MODEL DI_DDTD142TU PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
********************************************************************************
**********************************************
********************************************************************************
******************************************************
Note: The following SPICE model is for the transistor element. When applying th
is SPICE model to your circuit simulation be
certain to add R1 and/or R2 values per the table found on sheet 1 of the data sh
eet. Allow +/- 30% resistance tolerance and +/20% for R2/R1 ratio tolerance.
*SRC=DDTD143EC;DI_DDTD143EC;BJTs PNP; Si; 32.0V 0.500A 220MHz Diodes Inc. P
BTs
.MODEL DI_DDTD143EC PNP (IS=50.6f NF=1.00 BF=534 VAF=102
+ IKF=0.340 ISE=17.3p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.840 RE=0.283 RB=1.13 RC=0.113
+ XTB=1.5 CJE=55.3p VJE=1.10 MJE=0.500 CJC=21.3p VJC=0.300
+ MJC=0.300 TF=605p TR=120n EG=1.12 )
********************************************************************************
**********************************************
********************************************************************************
******************************************************
Note: The following SPICE model is for the transistor element. When applying th
*
*
*
*
*
*
*
*Zetex FCX705 Spice Model v1.0 Last Revised 12/08/08
*
.SUBCKT FCX705 1 2 3
*
C B E
Q1 1 2 4 SUB705
Q2 1 4 3 SUB705 4
*
.MODEL SUB705 PNP IS=3.35584E-14 BF=85 VAF=212 NF=1.002 IKF=0.817
+ ISE=3.6E-13 NE=4.1 BR=24 VAR=6 NR=0.999 IKR=0.114 ISC=1.406E-13 NC=1.13
+ RB=1.1 RE=0.4 RC=0.0339 CJE=100E-12 CJC=37E-12 VJC=1.045 MJC=0.595
.ENDS FCX705
*
*$
*
*
(c) 2008 Diodes Incorporated
*
* The copyright in these models and the designs embodied belong
* to Diodes Incorporated (" Diodes "). They are supplied
* free of charge by Diodes for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Diodes Incorporated, its distributors
* or agents.
*
* Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, US
A
*
*Zetex FMMT38C Spice Model v1.0 Last Revised 12/6/02
*
.SUBCKT FMMT38C 1 2 3
*
C B E
Q1 1 2 4 SUB38C
Q2 1 4 3 SUB38C 12.75
*
.MODEL SUB38C NPN IS=1.1E-14 ISE=7.1E-15 NF=1.012 NE=1.4758
+BF=220 IKF=.12 BR=15 IKR=.05 RE=1.3 RC=.5 RB=.3 VAF=150
+CJE=14.5E-12 CJC=4.14E-12 VJC=.515 MJC=.26 TF=1.15E-9 TR=75E-9
.ENDS FMMT38C
*
*$
*
*
(c) 2005 Zetex Semiconductors plc
*
* The copyright in these models and the designs embodied belong
* to Zetex Semiconductors plc (" Zetex "). They are supplied
* free of charge by Zetex for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
*
*
*
*
*
*
*
*Zetex FMMT614 Spice Model v1.0 Last Revised 2/8/2004
*
.SUBCKT FMMT614 1 2 3
*
C B E
Q1 1 2 4 SUB614
Q2 1 4 3 SUB614 5.39
.ENDS FMMT614
*
.MODEL SUB614 NPN IS =1.575E-14 NF =1.00 BF =280 IKF=0.08 VAF=284
+
ISE=5.8853E-15 NE =1.3517 NR =1.0469 BR =11 IKR=0.2
+
VAR=13 ISC=5.3795E-14 NC =1.257 RB =0.22 RE =0.375
+
RC =0.40 CJC=3.6E-12 MJC=0.3393 VJC=0.4127
+
CJE=23.7E-12 TF =1.73E-9 TR =260E-9
*
*$
*
*
(c) 2005 Zetex Semiconductors plc
*
* The copyright in these models and the designs embodied belong
* to Zetex Semiconductors plc (" Zetex "). They are supplied
* free of charge by Zetex for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Zetex PLC, its distributors
* or agents.
*
* Zetex Semiconductors plc, Zetex Technology Park, Chadderton,
* Oldham, United Kingdom, OL9 9LL
*
*Zetex FMMT634 Spice Model v1.0 Last Revised 17/10/97
*
.SUBCKT FMMT634 1 2 3
*
C B E
Q1 5 2 4 SUB634
Q2 5 4 3 SUB634 4.45
R1 1 5 .27
*
.MODEL SUB634 NPN IS=4.5E-14 ISE=1E-14 NF =1 NE =1.45 BF =250 IKF=.16
+RE=.09 RB=1 BR =12 IKR=.15 VAF=240 CJE=65E-12 CJC=7E-12
+VJC=.85 MJC=.45 TF =.95E-9 TR =300E-9
.ENDS FMMT634
*
*$
*
*
(c) 2005 Zetex Semiconductors plc
*
* The copyright in these models and the designs embodied belong
* to Zetex Semiconductors plc (" Zetex "). They are supplied
* free of charge by Zetex for the purpose of research and design
*
*
*
*
*
*
*
*
*
*
*ZETEX FMMT734 Spice Model v1.0 Last Revised 29/8/2006
*
.SUBCKT FMMT734 1 2 3
*
C B E
Q1 1 2 4 SUB734 0.4
Q2 1 4 3 SUB734 2
*
.MODEL SUB734 PNP IS =2E-13 NF =1 BF =330 IKF=0.8
+VAF=44 ISE=1E-13 NE =1.4 RCO=4.5 GAMMA=5E-9
+NR =1 BR =20 IKR=0.2 VAR=10 ISC=2e-13 NC =1.25
+RB =0.15 RE =0.15 RC =0.2 QUASIMOD=1
+CJC=36E-12 MJC=0.45 VJC=0.75 CJE=110E-12
+TF =0.8E-9 TR =10e-9 XTB=1.4
.ENDS FMMT734
*
*$
*
*
(c) 2006 Zetex Semiconductors plc
*
* The copyright in these models and the designs embodied belong
* to Zetex Semiconductors plc (" Zetex "). They are supplied
* free of charge by Zetex for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Zetex PLC, its distributors
* or agents.
*
* Zetex Semiconductors plc, Zetex Technology Park, Chadderton,
* Oldham, United Kingdom, OL9 9LL
*
*Zetex FMMTA13 Spice Model v1.1 Last Revised 6/1/03
*
.SUBCKT FMMTA13 1 2 3
*
C B E
Q1 1 2 4 SUB38B
Q2 1 4 3 SUB38B 12.75
*
.MODEL SUB38B NPN IS =1.1E-14 ISE=7.1E-15 NF =1.012 NE =1.4758
+BF =147 IKF=.12 BR =15 IKR=.05 RE =1.3 RC =.5 RB =.3 VAF=150
+CJE=14.5E-12 CJC=4.14E-12 VJC=.515 MJC=.26 TF =1.15E-9 TR =75E-9
.ENDS FMMTA13
*
*$
*
*
(c) 2005 Zetex Semiconductors plc
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*Zetex FMMTA14 Spice Model v1.0 Last Revised 12/6/2002
*
.SUBCKT FMMTA14 1 2 3
*
C B E
Q1 1 2 4 SUB38C
Q2 1 4 3 SUB38C 12.75
*
.MODEL SUB38C NPN IS=1.1E-14 ISE=7.1E-15 NF=1.012 NE=1.4758
+BF=220 IKF=.12 BR=15 IKR=.05 RE=1.3 RC=.5 RB=.3 VAF=150
+CJE=14.5E-12 CJC=4.14E-12 VJC=.515 MJC=.26 TF=1.15E-9 TR=75E-9
.ENDS FMMTA14
*
*$
*
*
(c) 2005 Zetex Semiconductors plc
*
* The copyright in these models and the designs embodied belong
* to Zetex Semiconductors plc (" Zetex "). They are supplied
* free of charge by Zetex for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Zetex PLC, its distributors
* or agents.
*
* Zetex Semiconductors plc, Zetex Technology Park, Chadderton,
* Oldham, United Kingdom, OL9 9LL
*
*Zetex FZT600 Spice Model v1.0 Last Revised 23/12/04
*
.SUBCKT FZT600 1 2 3
*
C B E
Q1 1 2 4 SUB600
Q2 1 4 3 SUB600 2.74
*
.MODEL SUB600 NPN IS=8.354E-14 BF=70 VAF=18.3 IKF=0.25 ISE=2E-13
+NE=1.45 BR=2 VAR=6.5 NR=1 IKR=0.2 ISC=6.138E-13 NC=1.46 RB=0.5 RE=0.25
+RC=0.3 CJE=83.7E-12 VJE=0.6868 MJE=0.3362 CJC=8.6E-12 VJC=0.3679
+MJC=0.3607 TF=1E-9 TR=1800E-9
.ENDS FZT600
*
*$
*
*
(c) 2005 Zetex Semiconductors plc
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*Zetex FZT603 Spice Model v1.0 Last Revised 1/7/03
*
.SUBCKT FZT603 1 2 3
*
C B E
Q1 1 2 4 SUB603
Q2 1 4 3 SUB603 3.46
*
.MODEL SUB603 NPN IS=1E-13 BF=130 VAF=200 NF=1 IKF=0.45 ISE=1.8E-13
+NE=1.5 BR=20 VAR=30 NR=1 IKR=0.45 ISC=7E-13 NC=1.2 RB=0.3 RE=0.3
+RC=0.5 CJE=115E-12 CJC=11E-12 VJC=0.85 MJC=0.41 TF=1E-9 TR=250E-9
+XTB=1.5
.ENDS
*
*$
*
*
(c) 2005 Zetex Semiconductors plc
*
* The copyright in these models and the designs embodied belong
* to Zetex Semiconductors plc (" Zetex "). They are supplied
* free of charge by Zetex for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Zetex PLC, its distributors
* or agents.
*
* Zetex Semiconductors plc, Zetex Technology Park, Chadderton,
* Oldham, United Kingdom, OL9 9LL
*
*Zetex FZT605 Spice Model v1.0 Last revision 27/04/05
*
.SUBCKT FZT605 1 2 3
*
C B E
Q1 1 2 4 SUB605
Q2 1 4 3 SUB605 3.46
*
.MODEL SUB605 NPN IS=4.8E-14 BF=170 VAF=542 NF=1.0039 IKF=0.2 ISE=1.5E-14
+NE=1.55 BR=12 VAR=20 NR=1.007 IKR=0.35 ISC=7.486E-14 NC=1.0984 RB=0.17 RE=0.3
+RC=0.14 CJE=81E-12 CJC=10.8E-12 VJC=0.58 MJC=0.41 TF=1.024E-9 TR=700E-9
.ENDS FZT605
*
*$
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*Zetex FZT705 Spice Model v1.0 Last Revised 9/8/90
*
.SUBCKT FZT705 1 2 3
*
C B E
Q1 1 2 4 SUB704
Q2 1 4 3 SUB704 4
*
.MODEL SUB704 PNP IS =3.35584E-14 BF =85 VAF=212 NF =1.002 IKF=.817
+ISE=3.6E-13 NE =4.1 BR =24 VAR=6 NR =.999 IKR=.114 ISC=1.406E-13 NC =1.13
+RB =1.1 RE =.4 RC =.0339 CJE=100E-12 CJC=37E-12 VJC=1.045 MJC=.595
.ENDS FZT705
*
*$
*
*
(c) 2005 Zetex Semiconductors plc
*
* The copyright in these models and the designs embodied belong
* to Zetex Semiconductors plc (" Zetex "). They are supplied
* free of charge by Zetex for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Zetex PLC, its distributors
* or agents.
*
* Zetex Semiconductors plc, Zetex Technology Park, Chadderton,
* Oldham, United Kingdom, OL9 9LL
*
*ZETEX FZTA14 Spice model v1.0 Last revision 25/11/2005
*
.SUBCKT FZTA14 1 2 3
*
C B E
Q1 1 2 4 SUB38C
Q2 1 4 3 SUB38C 12.75
*
.MODEL SUB38C NPN IS=1.1E-14 ISE=7.1E-15 NF=1.012 NE=1.4758
+BF=220 IKF=.12 BR=15 IKR=.05 RE=1.3 RC=.5 RB=.3 VAF=150
+CJE=14.5E-12 CJC=4.14E-12 VJC=.515 MJC=.26 TF=1.15E-9 TR=75E-9
.ENDS FZTA14
*
*$
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*Zetex ZTX603 Spice Model v1.0 Last Revised 1/7/03
*
.SUBCKT ZTX603 1 2 3
*
C B E
Q1 1 2 4 SUB603
Q2 1 4 3 SUB603 3.46
*
.MODEL SUB603 NPN IS=1E-13 BF=130 VAF=200 NF=1 IKF=0.45 ISE=1.8E-13
+NE=1.5 BR=20 VAR=30 NR=1 IKR=0.45 ISC=7E-13 NC=1.2 RB=0.3 RE=0.3
+RC=0.5 CJE=115E-12 CJC=11E-12 VJC=0.85 MJC=0.41 TF=1E-9 TR=250E-9
+XTB=1.5
.ENDS
*
*$
*
*
(c) 2005 Zetex Semiconductors plc
*
* The copyright in these models and the designs embodied belong
* to Zetex Semiconductors plc (" Zetex "). They are supplied
* free of charge by Zetex for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Zetex PLC, its distributors
* or agents.
*
* Zetex Semiconductors plc, Zetex Technology Park, Chadderton,
* Oldham, United Kingdom, OL9 9LL
*
*Zetex ZTX605 Spice Model v1.0 Last Revised 24/6/93
*
.SUBCKT ZTX605 1 2 3
*
C B E
Q1 1 2 4 SUB605
Q2 1 4 3 SUB605 3.46
*
.MODEL SUB605 NPN IS=4.8E-14 BF=170 VAF=542 NF=1.0039 IKF=0.2 ISE=1.5E-14
+NE=1.55 BR=12 VAR=20 NR=1.007 IKR=0.35 ISC=7.486E-14 NC=1.0984 RB=0.17 RE=0.3
+RC=0.14 CJE=81E-12 CJC=10.8E-12 VJC=0.58 MJC=0.41 TF=1.024E-9 TR=700E-9
.ENDS ZTX605
*
*$
*
*
(c) 2005 Zetex Semiconductors plc
*
* The copyright in these models and the designs embodied belong
* to Zetex Semiconductors plc (" Zetex "). They are supplied
* free of charge by Zetex for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Zetex PLC, its distributors
* or agents.
*
* Zetex Semiconductors plc, Zetex Technology Park, Chadderton,
*
*Zetex ZTX614 Spice Model v1.0 Last Revised 17/12/92
*
.SUBCKT ZTX614 1 2 3
*
C B E
Q1 1 2 4 SUB614
Q2 1 4 3 SUB614 5.39
.ENDS ZTX614
*
.MODEL SUB614 NPN IS =1.575E-14 NF =1.00 BF =280 IKF=0.08 VAF=284
+
ISE=5.8853E-15 NE =1.3517 NR =1.0469 BR =11 IKR=0.2
+
VAR=13 ISC=5.3795E-14 NC =1.257 RB =0.22 RE =0.375
+
RC =0.40 CJC=3.6E-12 MJC=0.3393 VJC=0.4127
+
CJE=23.7E-12 TF =1.73E-9 TR =260E-9
*
*$
*
*
(c) 2005 Zetex Semiconductors plc
*
* The copyright in these models and the designs embodied belong
* to Zetex Semiconductors plc (" Zetex "). They are supplied
* free of charge by Zetex for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Zetex PLC, its distributors
* or agents.
*
* Zetex Semiconductors plc, Zetex Technology Park, Chadderton,
* Oldham, United Kingdom, OL9 9LL
*
*Zetex ZTX705 Spice Model v1.0 Last Revised 9/8/90
*
.SUBCKT ZTX705 1 2 3
*
C B E
Q1 1 2 4 SUB704
Q2 1 4 3 SUB704 4
*
.MODEL SUB704 PNP IS =3.35584E-14 BF =85 VAF=212 NF =1.002 IKF=.817
+ISE=3.6E-13 NE =4.1 BR =24 VAR=6 NR =.999 IKR=.114 ISC=1.406E-13 NC =1.13
+RB =1.1 RE =.4 RC =.0339 CJE=100E-12 CJC=37E-12 VJC=1.045 MJC=.595
.ENDS ZTX705
*
*$
*
*
(c) 2005 Zetex Semiconductors plc
*
* The copyright in these models and the designs embodied belong
* to Zetex Semiconductors plc (" Zetex "). They are supplied
* free of charge by Zetex for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Zetex PLC, its distributors
* or agents.
*
*
*
*
*Zetex ZXTN04120HFF Spice Model v1.0 Last Revised 09/02/07
*
.SUBCKT ZXTN04120HFF 1 2 3
*
C B E
Q1 1 2 4 SUB605
Q2 1 4 3 SUB605 3.46
*
.MODEL SUB605 NPN IS=4.8E-14 BF=170 VAF=542 NF=1.0039 IKF=0.2 ISE=1.5E-14
+NE=1.55 BR=12 VAR=20 NR=1.007 IKR=0.35 ISC=7.486E-14 NC=1.0984 RB=0.17 RE=0.3
+RC=0.14 CJE=81E-12 CJC=10.8E-12 VJC=0.58 MJC=0.41 TF=1.024E-9 TR=700E-9
.ENDS ZXTN04120HFF
*
*$
*
*
(c) 2007 Zetex Semiconductors plc
*
* The copyright in these models and the designs embodied belong
* to Zetex Semiconductors plc (" Zetex "). They are supplied
* free of charge by Zetex for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Zetex PLC, its distributors
* or agents.
*
* Zetex Semiconductors plc, Zetex Technology Park, Chadderton,
* Oldham, United Kingdom, OL9 9LL
*
*Zetex ZXTP05120HFF Spice Model v1.0 Last Revised 08/02/07
*
.SUBCKT ZXTP05120HFF 1 2 3
*
C B E
Q1 1 2 4 SUB704
Q2 1 4 3 SUB704 4
*
.MODEL SUB704 PNP IS =3.35584E-14 BF =85 VAF=212 NF =1.002 IKF=.817
+ISE=3.6E-13 NE =4.1 BR =24 VAR=6 NR =.999 IKR=.114 ISC=1.406E-13 NC =1.13
+RB =1.1 RE =.4 RC =.0339 CJE=100E-12 CJC=37E-12 VJC=1.045 MJC=.595
.ENDS ZXTP05120HFF
*
*$
*
*
(c) 2007 Zetex Semiconductors plc
*
* The copyright in these models and the designs embodied belong
* to Zetex Semiconductors plc (" Zetex "). They are supplied
* free of charge by Zetex for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Zetex PLC, its distributors
* or agents.
*
*
*
Diodes
********************************************************************************
*********************************************************
*SRC=DMMT3906;DI_DMMT3906;BJTs PNP; Si; 40.0V 0.200A 257MHz Diodes Inc. Mat
ched BJTs - Single device of dual
.MODEL DI_DMMT3906 PNP (IS=20.3f NF=1.00 BF=437 VAF=114
+ IKF=44.6m ISE=6.81p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.120 RE=1.16 RB=4.63 RC=0.463
+ XTB=1.5 CJE=23.5p VJE=1.10 MJE=0.500 CJC=10.7p VJC=0.300
+ MJC=0.300 TF=504p TR=94.3n EG=1.12 )
********************************************************************************
*********************************************************
*SRC=DMMT3906W;DI_DMMT3906W;BJTs PNP; Si; 40.0V 0.200A 257MHz
PNP
.MODEL DI_DMMT3906W PNP (IS=20.3f NF=1.00 BF=274 VAF=114
+ IKF=36.4m ISE=6.99p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=90.0m RE=1.01 RB=4.03 RC=0.403
+ XTB=1.5 CJE=12.1p VJE=1.10 MJE=0.500 CJC=10.7p VJC=0.300
+ MJC=0.300 TF=531p TR=85.6n EG=1.12 )
Diodes, Inc.
*
*Diodes DMMT5401 Spice Model v1.0 Last Revised 16/02/09
*
.MODEL MMDT5401 PNP IS=6E-14 NF=1 BF=130 VAF=360 ISE=6E-14
+ NE=1.5 NR=1 BR=6.5 VAR=37 ISC=8E-12 NC=1.35 RC=0.08 RB=1 RE=0.25
+ CJC=13E-12 MJC=0.46 VJC=0.7 CJE=63E-12 MJE=0.41 VJE=0.9
+ TF=6.7E-10 TR=1.03E-6 XTB=1.5 QUASIMOD=1 RCO=14 GAMMA=1.5E-8
*
*$
*
*
(c) 2009 Diodes Incorporated
*
* The copyright in these models and the designs embodied belong
* to Diodes Incorporated (" Diodes "). They are supplied
* free of charge by Diodes for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Diodes Incorporated, its distributors
* or agents.
*
* Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, US
A
*
*Diodes DMMT5551 Spice Model v1.0 Last Revised 17/02/09
*
DDG 15 14 DCGD
R2 12 15 1.00
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 7.50n
.MODEL DMOS NMOS(LEVEL=3 VMAX=62.5k THETA=60.0m
+ ETA=2.00m VTO=3.00 KP=27.5
.MODEL DCGD D (CJO=907p VJ=0.600 M=0.680
.MODEL DSUB D (IS=28.6n N=1.50 RS=65.2m BV=30.0
+ CJO=257p VJ=0.800 M=0.420 TT=252n
.MODEL DLIM D (IS=100U)
.ENDS
******************************************
*SRC=DMC3018LSD (P-Ch);DI_DMC3018LSD (P-Ch);MOSFETs P;Enh;30.0V 6.00A 45.0mohms
Diodes Inc Complementary (P-Channel Model)
*SYM=POWMOSP
.SUBCKT DI_DMC3018LSD (P-Ch) 10 20 30
*
TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 20.4m
RS 40 3 2.12m
RG 20 2 25.0
CGS 2 3 630p
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 843p
R1 13 0 1.00
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1.00
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 7.50n
.MODEL DMOS PMOS(LEVEL=3 VMAX=62.5k THETA=60.0m
+ ETA=2.30m VTO=-3.00 KP=21.3
.MODEL DCGD D (CJO=843p VJ=0.600 M=0.680
.MODEL DSUB D (IS=24.9n N=1.50 RS=75.0m BV=30.0
+ CJO=200p VJ=0.800 M=0.420 TT=252n
.MODEL DLIM D (IS=100U)
.ENDS
*SRC=DMC3035LSD;DI_DMC3035LSD;MOSFETs N;Enh;30.0V 6.90A 35.0mohms Diodes Inc MO
SFET (N-Channel Element)
*SYM=POWMOSN
.SUBCKT DI_DMC3035LSD 10 20 30
*
TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 15.6m
RS 40 3 1.87m
RG 20 2 39.2
CGS 2 3 336p
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 440p
R1 13 0 1.00
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1.00
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 7.50n
.MODEL DMOS NMOS(LEVEL=3 VMAX=62.5k THETA=80.0m
+ ETA=2.00m VTO=2.10 KP=16.7
.MODEL DCGD D (CJO=440p VJ=0.600 M=0.680
.MODEL DSUB D (IS=28.6n N=1.50 RS=65.2m BV=30.0
+ CJO=117p VJ=0.800 M=0.420 TT=252n
.MODEL DLIM D (IS=100U)
.ENDS
*SRC=DMC3035LSD;DI_DMC3035LSD;MOSFETs P;Enh;30.0V 5.00A 65.0mohms Diodes Inc MO
SFET (P-Channel Element)
*SYM=POWMOSP
.SUBCKT DI_DMC3035LSD 10 20 30
*
TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 29.9m
RS 40 3 2.62m
RG 20 2 30.0
CGS 2 3 287p
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 629p
R1 13 0 1.00
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1.00
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 7.50n
.MODEL DMOS PMOS(LEVEL=3 VMAX=62.5k THETA=80.0m
+ ETA=2.76m VTO=-2.10 KP=30.0
.MODEL DCGD D (CJO=629p VJ=0.600 M=0.680
.MODEL DSUB D (IS=20.8n N=1.50 RS=90.0m BV=30.0
+ CJO=151p VJ=0.800 M=0.420 TT=252n
.MODEL DLIM D (IS=100U)
.ENDS
*SRC=DMC3036LSD;DI_DMC3036LSD;MOSFETs N;Enh;30.0V 6.90A 36.0mohms Diodes Inc MO
SFET (N-Channel)
*SYM=POWMOSN
.SUBCKT DI_DMC3036LSD 10 20 30
*
TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 16.1m
RS 40 3 1.90m
RG 20 2 39.2
CGS 2 3 336p
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 440p
R1 13 0 1.00
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1.00
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 7.50n
.MODEL DMOS NMOS(LEVEL=3 VMAX=62.5k THETA=80.0m
+ ETA=2.00m VTO=2.10 KP=16.7
.MODEL DCGD D (CJO=440p VJ=0.600 M=0.680
.MODEL DSUB D (IS=28.6n N=1.50 RS=65.2m BV=30.0
+ CJO=117p VJ=0.800 M=0.420 TT=252n
.MODEL DLIM D (IS=100U)
.ENDS
*SRC=DMC3036LSD;DI_DMC3036LSD;MOSFETs P;Enh;30.0V 6.00A 36.0mohms Diodes Inc MO
SFET (P-Channel)
*SYM=POWMOSP
.SUBCKT DI_DMC3036LSD 10 20 30
*
TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 16.1m
RS 40 3 1.90m
RG 20 2 25.0
CGS 2 3 532p
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 962p
R1 13 0 1.00
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1.00
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 7.50n
.MODEL DMOS PMOS(LEVEL=3 VMAX=62.5k THETA=80.0m
+ ETA=2.30m VTO=-2.20 KP=25.0
.MODEL DCGD D (CJO=962p VJ=0.600 M=0.680
.MODEL DSUB D (IS=24.9n N=1.50 RS=75.0m BV=30.0
+ CJO=257p VJ=0.800 M=0.420 TT=252n
.MODEL DLIM D (IS=100U)
.ENDS
*N-CH
.SUBCKT DMG1016VN D=10 G=20 S=30
*
TERMINALS: D G S
M1 1 2 3 3 NMOS L=0.6U W=57.5m
RD 10 1 240m
RS 30 3 60m
RG 20 2 93
CGS 2 3 57p
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 27p
R1 13 0 1.00
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1.00
D2 15 0 DLIM
DSD 3 10 DSUB
*********************************************
.MODEL NMOS NMOS LEVEL=3 U0=500 VMAX=80k
+ ETA=0.1m VTO=0.93 TOX=16.8n NSUB=1e17
*********************************************
*********************************************
.MODEL DCGD D CJO=27p VJ=80m M=0.320
*********************************************
.MODEL DSUB D IS=36.1n N=1.50 RS=21.8m BV=20
+ CJO=14p VJ=0.800 M=0.420
*********************************************
.MODEL DLIM D IS=100U
*********************************************
.ENDS DMG1016VN
*P-CH
.SUBCKT DMG1016VP D=10 G=20 S=30
*
TERMINALS: D G S
M1 1 2 3 3 PMOS L=0.6U W=41m
RD 10 1 300m
RS 30 3 75m
RG 20 2 150
CGS 2 3 54.55p
EGD 12 30 2 1 1
VFB 14 30 0
FFB 2 1 VFB 1
CGD 13 14 22.2p
R1 13 30 1.00
D1 13 12 DLIM
DDG 14 15 DCGD
R2 12 15 1.00
D2 30 15 DLIM
DSD 10 3 DSUB
*********************************************
.MODEL PMOS PMOS LEVEL=3 U0=300 VMAX=40k
+ ETA=0.1m VTO=-0.952 TOX=16.8n NSUB=2e17
*********************************************
.MODEL DCGD D CJO=22.2p VJ=0.150 M=0.270
*********************************************
.MODEL DSUB D IS=36.1n N=1.50 RS=21.8m BV=20
+ CJO=20p VJ=0.600 M=0.350
*********************************************
.MODEL DLIM D IS=100U
*********************************************
.ENDS DMG1016VP
*SRC=DMS2120LFWB;DI_DMS2120LFWB;MOSFETs P;Enh;20.0V 2.90A 95.0mohms Diodes Inc
MOSFET element
*SYM=POWMOSP
.SUBCKT DI_DMS2120LFWB 10 20 30
*
TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 44.1m
RS 40 3 3.37m
RG 20 2 51.7
CGS 2 3 578p
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 381p
R1 13 0 1.00
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1.00
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 7.50n
.MODEL DMOS PMOS(LEVEL=3 VMAX=41.7k THETA=80.0m
+ ETA=2.00m VTO=-1.30 KP=56.9
.MODEL DCGD D (CJO=381p VJ=0.600 M=0.680
.MODEL DSUB D (IS=12.0n N=1.50 RS=0.155 BV=20.0
+ CJO=97.0p VJ=0.800 M=0.420 TT=194n
.MODEL DLIM D (IS=100U)
.ENDS
SpiceMod Diode
Page 0
FileVersion 1
Model DI_SBR1U40LP
Manufacturer "Diodes Inc."
Note 1 "SBR/ SKY"
PartNumber SBR1U40LP
1004 1 1.00
1009 1 10.0
1007 1 10.0m
1005 1 0.100
1010 1 1.09
1014 1 1.00
1008 1 0.229
1011 1 40.0
1006 1 0.301
1012 1 50.0u
1013 1 700p
1015 1 5.60n
Material 0
*SRC=DMN55D0UT;DI_DMN55D0UT;MOSFETs N;Enh;50.0V 0.160A 4.00ohms Diodes Inc MOSFE
T
.MODEL DI_DMN55D0UT NMOS( LEVEL=1 VTO=1.00 KP=0.324 GAMMA=1.24
+ PHI=.75 LAMBDA=133u RD=0.560 RS=0.560
+ IS=80.0f PB=0.800 MJ=0.460 CBD=9.60p
+ CBS=11.5p CGSO=25.2n CGDO=21.0n CGBO=204n )
* -- Assumes default L=100U W=100U -*SRC=BC847BVC;DI_BC847BVC;BJTs NPN; Si; 45.0V 0.100A 300MHz Diodes, Inc. transis
tor
.MODEL DI_BC847BVC NPN (IS=3.75f NF=1.00 BF=1.61k VAF=121
+ IKF=8.79m ISE=8.38p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=90.0m RE=0.765 RB=3.06 RC=0.306
+ XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300
+ MJC=0.300 TF=520p TR=78.9n EG=1.12 )
*SRC=DMN55D0UT;DI_DMN55D0UT;MOSFETs N;Enh;50.0V 0.160A 4.00ohms Diodes Inc MOSFE
T
.MODEL DI_DMN55D0UT NMOS( LEVEL=1 VTO=1.00 KP=0.324 GAMMA=1.24
+ PHI=.75 LAMBDA=133u RD=0.560 RS=0.560
+ IS=80.0f PB=0.800 MJ=0.460 CBD=9.60p
+ CBS=11.5p CGSO=25.2n CGDO=21.0n CGBO=204n )
* -- Assumes default L=100U W=100U -*SRC=BC847BVC;DI_BC847BVC;BJTs NPN; Si; 45.0V 0.100A 300MHz Diodes, Inc. transis
tor
.MODEL DI_BC847BVC NPN (IS=3.75f NF=1.00 BF=1.61k VAF=121
+ IKF=8.79m ISE=8.38p NE=2.00 BR=4.00 NR=1.00
+ VAR=24.0 IKR=90.0m RE=0.765 RB=3.06 RC=0.306
+ XTB=1.5 CJE=13.3p VJE=1.10 MJE=0.500 CJC=8.67p VJC=0.300
+ MJC=0.300 TF=520p TR=78.9n EG=1.12 )
*SRC=DMN55D0UT;DI_DMN55D0UT;MOSFETs N;Enh;50.0V 0.160A 4.00ohms Diodes Inc MOSFE
T
.MODEL DI_DMN55D0UT NMOS( LEVEL=1 VTO=1.00 KP=0.324 GAMMA=1.24
+ PHI=.75 LAMBDA=133u RD=0.560 RS=0.560
+ IS=80.0f PB=0.800 MJ=0.460 CBD=9.60p
+ CBS=11.5p CGSO=25.2n CGDO=21.0n CGBO=204n )
* -- Assumes default L=100U W=100U -*SRC=BC857BV;DI_BC857BV;BJTs PNP; Si; 45.0V 0.100A 250MHz Diodes Inc. BJTs
.MODEL DI_BC857BV PNP (IS=10.2f NF=1.00 BF=650 VAF=121
+ IKF=42.5m ISE=2.25p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.105 RE=0.715 RB=2.86 RC=0.286
+ XTB=1.5 CJE=37.6p VJE=1.10 MJE=0.500 CJC=12.1p VJC=0.300
+ MJC=0.300 TF=499p TR=95.9n EG=1.12 )=499p TR=95.9n EG=1.12 )
*SRC=DMN55D0UT;DI_DMN55D0UT;MOSFETs N;Enh;50.0V 0.160A 4.00ohms Diodes Inc MOSFE
T
.MODEL DI_DMN55D0UT NMOS( LEVEL=1 VTO=1.00 KP=0.324 GAMMA=1.24
+ PHI=.75 LAMBDA=133u RD=0.560 RS=0.560
+ IS=80.0f PB=0.800 MJ=0.460 CBD=9.60p
+ CBS=11.5p CGSO=25.2n CGDO=21.0n CGBO=204n )
* -- Assumes default L=100U W=100U -*SRC=BC857BV;DI_BC857BV;BJTs PNP; Si; 45.0V 0.100A 250MHz Diodes Inc. BJTs
.MODEL DI_BC857BV PNP (IS=10.2f NF=1.00 BF=650 VAF=121
+ IKF=42.5m ISE=2.25p NE=2.00 BR=4.00 NR=1.00
+ VAR=20.0 IKR=0.105 RE=0.715 RB=2.86 RC=0.286
+ XTB=1.5 CJE=37.6p VJE=1.10 MJE=0.500 CJC=12.1p VJC=0.300
+ MJC=0.300 TF=499p TR=95.9n EG=1.12 )=499p TR=95.9n EG=1.12 )
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=27/11/09
*VERSION=2
*PIN_ORDER
D G S
*
.SUBCKT ZXMS6001N3 1 2 3
M1 31 4 33 33 Mmod1
M2 4 4 43 3 Mmod2 M=25
M3 41 37 38 38 Mmod3
M4 16 45 17 3 Mmod2 M=200
M5 15 16 17 3 Mmod2 M=200
M6 14 15 3 3 Mmod2 M=400
R1 2 4 20E3
R2 41 31 0.01
R3 3 33 0.25
R4 1 3 10E6
R5 37 3 20E3
R6 2 13 15E3
R7 2 3 26E3
R8 12 10 30E3
R9 12 11 28E3
R10 11 3 2.3E3
R11 13 16 35E3
R12 13 15 35E3
R13 17 3 2.5E3
R14 4 14 300
R15 18 45 50E3
R16 44 12 1.2E3
C1 4 33 400E-12
C2 4 1 75E-12
C3 35 36 400E-12
C4 16 3 200E-12
S1 43 3 41 42 Smod1
S2 4 35 31 4 Smod2
S3 34 35 31 4 Smod3
E1 42 3 2 3 0.22
E2 34 33 4 33 1
E3 18 19 11 10 100
E4 44 3 2 3 1
E6 36 3 31 4 1
D1 5 2 Dmod1
D2 5 3 Dmod1
D3 38 4 Dmod3
D4 3 12 Dmod4
D5 3 13 Dmod5
D6 10 3 Dmod6
D7 37 41 Dmod7
D8 3 1 Dmod8
D9 3 45 Dmod2
V1 1 41 0
*
*Distributed Thermal Model for device mounted on minimum copper Rth=208C/W
*To enable thermal feedback for transient analysis only change **G1 to G1
*Transient junction temperature may be observed at node 100 where 1V=1C
*
**G1 3 20 VALUE = {ABS( I(V1) * V(1,3) ) }
R21 20 21 0.07
R22 21 22 0.17
R23 22 23 0.37
R24 23 24 1.34
R25 24 25 2.80
R26 25 26 11.19
R27 26 27 48.10
R28 27 28 78.30
R29 28 29 65.99
C21 20 21 7.45E-5
C22 21 22 2.98E-4
C23 22 23 8.94E-4
C24 23 24 2.23E-3
C25 24 25 1.97E-2
C26 25 26 3.58E-2
C27 26 27 5.61E-2
C28 27 28 4.47E-1
C29 28 29 1.36
V2 29 3 25
E5 19 3 22 29 0.201
*Junction temperature at node 20 is 1V/C
*Ambient temperature set V2 at 1V per 1C
*
*
.MODEL Mmod1 NMOS (LEVEL=1 VTO=1.95 IS=1E-15 KP=2.2 )
.MODEL Mmod2 NMOS (LEVEL=1 VTO=2.5)
.MODEL Mmod3 NMOS (LEVEL=1 VTO=1.95 IS=1E-15 KP=0.002 RS=150)
.MODEL Dmod1 D (RS=11 BV=11)
.MODEL Dmod2 D (RS=1 BV=5 CJO=10p)
.MODEL Dmod3 D (RS=10 BV=12)
.MODEL Dmod4 D (RS=10 BV=4)
.MODEL Dmod5 D (RS=10 BV=7)
.MODEL Dmod6 D (IS=1E-14 RS=10 BV=12)
.MODEL Dmod7 D (RS=1 BV=65)
.MODEL
.MODEL
.MODEL
.MODEL
.ENDS
*
*$
Dmod8
Smod1
Smod2
Smod3
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=12/11/2009
*VERSION=1
*PIN_ORDER
D G S
*
.SUBCKT BSP75G 1 2 3
M1 31 4 33 33 Mmod1
M2 4 4 43 3 Mmod2 M=25
M3 41 37 38 38 Mmod3
M4 16 18 17 3 Mmod2 M=200
M5 15 16 17 3 Mmod2 M=200
M6 14 15 3 3 Mmod2 M=400
R1 2 4 20E3
R2 41 31 0.01
R3 3 33 0.25
R4 1 3 10E6
R5 37 3 20E3
R6 2 13 15E3
R7 2 12 1.7E3
R8 12 10 30E3
R9 12 11 28E3
R10 11 3 2300
R11 13 16 35E3
R12 13 15 35E3
R13 17 3 2.5E3
R14 4 14 300
R15 18 45 50E3
C1 4 33 200E-12
C2 4 1 60E-12
C3 35 33 200E-12
S1 43 3 41 42 Smod1
S2 4 35 31 4 Smod2
S3 34 35 31 4 Smod3
E1 42 3 2 3 0.22
E2 34 33 4 33 1
E3 18 19 11 10 100
D1 5 2 Dmod1
D2 5 3 Dmod1
D3 38 4 Dmod3
D4 3 12 Dmod4
D5 3 13 Dmod5
D6 10 3 Dmod6
D7 37 41 Dmod7
D8 3 1 Dmod8
D9 3 45 Dmod2
*
*Distributed Thermal Model for device mounted on minimum copper Rth=208C/W
*To enable thermal feedback for transient analysis change **G1 to G1
V1 1 41 0
R3 3 33 0.25
R4 1 3 10E6
R5 37 3 20E3
R6 2 13 15E3
R7 2 12 1.7E3
R8 12 10 30E3
R9 12 11 28E3
R10 11 3 2300
R11 13 16 35E3
R12 13 15 35E3
R13 17 3 2.5E3
R14 4 14 300
R15 18 45 50E3
C1 4 33 200E-12
C2 4 1 60E-12
C3 35 33 200E-12
S1 43 3 41 42 Smod1
S2 4 35 31 4 Smod2
S3 34 35 31 4 Smod3
E1 42 3 2 3 0.22
E2 34 33 4 33 1
E3 18 19 11 10 100
D1 5 2 Dmod1
D2 5 3 Dmod1
D3 38 4 Dmod3
D4 3 12 Dmod4
D5 3 13 Dmod5
D6 10 3 Dmod6
D7 37 41 Dmod7
D8 3 1 Dmod8
D9 3 45 Dmod2
*
*Distributed Thermal Model - minimum copper Rth=208C/W
*To enable thermal feedback change *G1 to G1
V1 1 41 0
*G1 3 20 VALUE = {ABS( I(V1) * V(1,3) ) }
R21 20 21 0.07
R22 21 22 0.17
R23 22 23 0.37
R24 23 24 1.34
R25 24 25 2.80
R26 25 26 11.19
R27 26 27 48.10
R28 27 28 78.30
R29 28 29 65.99
C21 20 21 7.45E-5
C22 21 22 2.98E-4
C23 22 23 8.94E-4
C24 23 24 2.23E-3
C25 24 25 1.97E-2
C26 25 26 3.58E-2
C27 26 27 5.61E-2
C28 27 28 4.47E-1
C29 28 29 1.36
V2 29 3 25
E4 19 3 22 29 0.201
*Junction temperature node 20 at 1V=1C
*Ambient temperature set V2 at 1V=1C
*
.MODEL Mmod1 NMOS (LEVEL=1 VTO=1.95 IS=1E-15 KP=2.2)
D3 38 4 Dmod3
D4 3 12 Dmod4
D5 13 3 Dmod6
D6 10 13 Dmod6
D7 37 41 Dmod7
D8 3 41 Dmod8
V1 1 41 0
V2 3 111 1
I1 3 110 1
*
* Distributed Thermal Model 15mm x 15mm x 1.6mm FR4 1oz Cu
* To enable thermal feedback for transient analysis only change **G1 to G1
* Transient junction temperature may be observed at node 100 where 1V=1C
*
**G1 3 100 value={ABS( I(V1) * V(1,3) ) }
R21 100 101 0.23
R22 101 102 0.275
R23 102 103 1.265
R24 103 104 2.875
R25 104 105 10.925
R26 105 106 28.175
R27 106 107 29.67
R28 107 108 11.73
R29 108 109 67.85
C21 100 101 2.17E-5
C22 101 102 1.09E-4
C23 102 103 2.37E-4
C24 103 104 6.61E-4
C25 104 105 2.563E-3
C26 105 106 6.744E-3
C27 106 107 2.7974E-2
C28 107 108 0.8525
C29 108 109 0.8843
*
.MODEL Mmod1 NMOS (LEVEL=1 VTO=1.35 IS=1E-15 KP=10)
.MODEL Mmod2 NMOS (LEVEL=1 VTO=2.7 )
.MODEL Mmod3 NMOS (LEVEL=1 VTO=1.95 IS=1E-15 KP=0.001 RS=10)
.MODEL Dmod1 D (RS=11 BV=11)
.MODEL Dmod2 D (RS=1 BV=5 CJO=10p)
.MODEL Dmod3 D (RS=10 BV=12)
.MODEL Dmod4 D (RS=10 BV=6)
.MODEL Dmod5 D (RS=10 BV=7)
.MODEL Dmod6 D (IS=1E-14 RS=10 BV=12)
.MODEL Dmod7 D (RS=1 BV=65)
.MODEL Dmod8 D (IS=1E-13 RS=0.05 N=1.005 BV=90 CJO=212E-12 M=0.5 VJ=0.75)
.MODEL Smod1 VSWITCH RON=100 ROFF=1E6 VON=0.5 VOFF=0
.MODEL Smod2 VSWITCH RON=1 ROFF=1E6 VON=-0.5 VOFF=0.5
.MODEL Smod3 VSWITCH RON=1 ROFF=1E6 VON=0.5 VOFF=-0.5
.MODEL Rmod1 RES (TC1=1e-3)
.ENDS
*
*$
*SRC=DMG6968U;DI_DMG6968U;MOSFETs N;Enh;20.0V 6.50A 25.0mohms Diodes Inc MOSFET
*SYM=POWMOSN
.SUBCKT DI_DMG6968U 10 20 30
*
TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 10.9m
RS 40 3 1.62m
RG 20 2 33.7
CGS 2 3 119p
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 226p
R1 13 0 1.00
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1.00
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 7.50n
.MODEL DMOS NMOS(LEVEL=3 VMAX=41.7k THETA=80.0m
+ ETA=2.00m VTO=0.900 KP=31.8
.MODEL DCGD D (CJO=226p VJ=0.600 M=0.680
.MODEL DSUB D (IS=27.0n N=1.50 RS=55.4m BV=20.0
+ CJO=176p VJ=0.800 M=0.420 TT=247n
.MODEL DLIM D (IS=100U)
.ENDS
*SYM=POWMOSN
.SUBCKT DMG1012T D=10 G=20 S=30
*
TERMINALS: D G S
M1 1 20 3 3 NMOS L=0.6U W=47.66m
RD 10 1 220m
RS 30 3 80m
CGS 20 3 57p
EGD 12 0 20 1 1
VFB 14 0 0
FFB 20 1 VFB 1
CGD 13 14 27p
R1 13 0 1.00
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1.00
D2 15 0 DLIM
DSD 3 10 DSUB
.MODEL NMOS NMOS LEVEL=3 U0=500 VMAX=80k
+ ETA=0.1m VTO=0.99 TOX=16.8n NSUB=4.57e16
.MODEL DCGD D CJO=27p VJ=80m M=0.320
.MODEL DSUB D IS=36.1n N=1.50 RS=21.8m BV=20
+ CJO=14p VJ=0.800 M=0.420
.MODEL DLIM D IS=100U
.ENDS
*SYM=POWMOSN
.SUBCKT DMG1012T
*
TERMINALS:
M1 1 20 3 3
RD 10 1 220m
RS 30 3 80m
CGS 20 3 57p
EGD 12 0 20 1
VFB 14 0 0
FFB 20 1 VFB
CGD 13 14 27p
R1 13 0 1.00
D1 12 13 DLIM
DDG 15 14 DCGD
1
1
R2 12 15 1.00
D2 15 0 DLIM
DSD 3 10 DSUB
.MODEL NMOS NMOS LEVEL=3 U0=500 VMAX=80k
+ ETA=0.1m VTO=0.99 TOX=16.8n NSUB=4.57e16
.MODEL DCGD D CJO=27p VJ=80m M=0.320
.MODEL DSUB D IS=36.1n N=1.50 RS=21.8m BV=20
+ CJO=14p VJ=0.800 M=0.420
.MODEL DLIM D IS=100U
.ENDS
*SYM=POWMOSN
.SUBCKT DMG2302U D=10 G=20 S=30
*
TERMINALS: D G S
M1 1 2 3 3 NMOS L=0.6U W=539m
RD 10 1 47m
RS 30 3 5m
RG 20 2 1.5
CGS 2 3 552p
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 338p
R1 13 0 1.00
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1.00
D2 15 0 DLIM
DSD 3 10 DSUB
.MODEL NMOS NMOS LEVEL=3 U0=500 VMAX=110k
+ ETA=0.1m VTO=0.98 TOX=16.8n NSUB=5.36e16
.MODEL DCGD D CJO=338p VJ=0.150 M=0.430
.MODEL DSUB D IS=36.1n N=1.50 RS=21.8m BV=20.0
+ CJO=28p VJ=0.800 M=0.420
.MODEL DLIM D IS=100U
.ENDS
*SYM=POWMOSN
.SUBCKT DMG4800LSD D=10 G=20 S=30
*
TERMINALS: D G S
M1 1 20 3 3 NMOS L=0.6U W=2.304672
RD 10 1 2m
RS 30 3 4m
CGS 20 3 692p
EGD 12 0 20 1 1
VFB 14 0 0
FFB 20 1 VFB 1
CGD 13 14 488p
R1 13 0 1.00
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1.00
D2 15 0 DLIM
DSD 3 10 DSUB
.MODEL NMOS NMOS LEVEL=3 U0=400 VMAX=40k
+ ETA=0.1m VTO=1.62 TOX=60n NSUB=2.16e16
.MODEL DCGD D CJO=488p VJ=450m M=0.420
.MODEL DSUB D IS=36.1n N=1.50 RS=21.8m BV=30
+ CJO=48p VJ=0.950 M=0.920
.MODEL DLIM D IS=100U
.ENDS
*SYM=POWMOSN
.SUBCKT DMG6402LDM D=10 G=20 S=30
*
TERMINALS: D G S
M1 1 2 3 3 NMOS L=0.6U W=985.2m
RD 10 1 8m
RS 30 3 14m
RG 20 2 1.5
CGS 2 3 372p
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 212p
R1 13 0 1.00
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1.00
D2 15 0 DLIM
DSD 3 10 DSUB
.MODEL NMOS NMOS LEVEL=3 U0=600 VMAX=70k
+ ETA=0.1m VTO=2.18 TOX=50n NSUB=1e16
.MODEL DCGD D CJO=212p VJ=0.250 M=0.380
.MODEL DSUB D IS=36.1n N=1.50 RS=21.8m BV=30.0
+ CJO=45p VJ=0.450 M=0.520
.MODEL DLIM D IS=100U
.ENDS
*SRC=DMG6968UDM;DI_DMG6968UDM;MOSFETs N;Enh;20.0V 6.50A 25.0mohms Diodes Inc MO
SFET
*SYM=POWMOSN
.SUBCKT DI_DMG6968UDM 10 20 30
*
TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 10.9m
RS 40 3 1.62m
RG 20 2 40.7
CGS 2 3 114p
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 204p
R1 13 0 1.00
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1.00
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 7.50n
.MODEL DMOS NMOS(LEVEL=3 VMAX=41.7k THETA=80.0m
+ ETA=2.00m VTO=0.900 KP=31.8
.MODEL DCGD D (CJO=204p VJ=0.600 M=0.680
.MODEL DSUB D (IS=27.0n N=1.50 RS=55.4m BV=20.0
+ CJO=134p VJ=0.800 M=0.420 TT=247n
.MODEL DLIM D (IS=100U)
.ENDS
*SYM=POWMOSN
.SUBCKT DMN2075 D=10 G=20 S=30
*
TERMINALS: D G S
RG 20 2 1.5
CGS 2 3 872p
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 408p
R1 13 0 1.00
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1.00
D2 15 0 DLIM
DSD 3 10 DSUB
*********************************************
.MODEL NMOS NMOS LEVEL=3 U0=500 VMAX=80k
+ ETA=0.1m VTO=1.0 TOX=16.8n NSUB=5.36e16
*********************************************
.MODEL DCGD D CJO=448p VJ=0.450 M=0.550
*********************************************
.MODEL DSUB D IS=36.1n N=1.50 RS=21.8m BV=20
+ CJO=28p VJ=0.800 M=0.420
*********************************************
.MODEL DLIM D IS=100U
*********************************************
.ENDS
*SRC=DMN100;DI_DMN100;MOSFETs N;Enh;30.0V 1.10A 0.150ohms Diodes Inc. MOSFET
.MODEL DI_DMN100 NMOS( LEVEL=1 VTO=2.00 KP=11.5 GAMMA=2.48
+ PHI=.75 LAMBDA=306u RD=21.0m RS=21.0m
+ IS=550f PB=0.800 MJ=0.460 CBD=199p
+ CBS=238p CGSO=360n CGDO=300n CGBO=840n ) * -- Assumes default L=100U W=1
00U -*SRC=DMN2004DMK;DI_DMN2004DMK;MOSFETs N;Enh;20.0V 0.540A 0.550ohms Diodes Inc.
N Channel MOSFET
.MODEL DI_DMN2004DMK NMOS( LEVEL=1 VTO=1.00 KP=0.200 GAMMA=1.24
+ PHI=.75 LAMBDA=117u RD=77.0m RS=77.0m
+ IS=270f PB=0.800 MJ=0.460 CBD=20.3p
+ CBS=24.3p CGSO=240n CGDO=200n CGBO=1.06u )
* -- Assumes default L=100U W=100U -*SRC=DMN2004DMK;DI_DMN2004DMK;MOSFETs N;Enh;20.0V 0.540A 0.550ohms Diodes Inc.
N Channel MOSFET
.MODEL DI_DMN2004DMK NMOS( LEVEL=1 VTO=1.00 KP=0.200 GAMMA=1.24
+ PHI=.75 LAMBDA=117u RD=77.0m RS=77.0m
+ IS=270f PB=0.800 MJ=0.460 CBD=20.3p
+ CBS=24.3p CGSO=240n CGDO=200n CGBO=1.06u )
* -- Assumes default L=100U W=100U -*SRC=DMN2004K;DI_DMN2004K;MOSFETs N;Enh;20.0V 0.540A 0.550ohms Diodes Inc. N Ch
annel MOSFET
.MODEL DI_DMN2004K NMOS( LEVEL=1 VTO=1.00 KP=0.200 GAMMA=1.24
+ PHI=.75 LAMBDA=117u RD=77.0m RS=77.0m
+ IS=270f PB=0.800 MJ=0.460 CBD=20.3p
+ CBS=24.3p CGSO=240n CGDO=200n CGBO=1.06u )
* -- Assumes default L=100U W=100U -*SRC=DMN2004TK;DI_DMN2004TK;MOSFETs N;Enh;20.0V 0.540A 0.550ohms Diodes Inc. N
Channel MOSFET
.MODEL DI_DMN2004TK NMOS( LEVEL=1 VTO=1.00 KP=0.200 GAMMA=1.24
+ PHI=.75 LAMBDA=117u RD=77.0m RS=77.0m
RG 20 2 12.5
CGS 2 3 2.46n
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 663p
R1 13 0 1.00
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1.00
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 7.50n
.MODEL DMOS NMOS(LEVEL=3 VMAX=41.7k THETA=60.0m
+ ETA=2.00m VTO=3.00 KP=274
.MODEL DCGD D (CJO=663p VJ=0.600 M=0.680
.MODEL DSUB D (IS=49.8n N=1.50 RS=37.5m BV=20.0
+ CJO=1.28n VJ=0.800 M=0.420 TT=297n
.MODEL DLIM D (IS=100U)
.ENDS
*SYM=POWMOSN
.SUBCKT DMN2020LSN D=10 G=20 S=30
*
TERMINALS: D G S
M1 1 2 3 3 NMOS L=0.6U W=1943.229m
RD 10 1 5m
RS 30 3 4m
RG 20 2 1.5
CGS 2 3 952p
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 550p
R1 13 0 1.00
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1.00
D2 15 0 DLIM
DSD 3 10 DSUB
.MODEL NMOS NMOS LEVEL=3 U0=500 VMAX=80k
+ ETA=0.1m VTO=1.525 TOX=25n NSUB=5.3e16
.MODEL DCGD D CJO=550p VJ=0.350 M=0.410
.MODEL DSUB D IS=36.1n N=1.50 RS=21.8m BV=20
+ CJO=116p VJ=0.120 M=0.380
.MODEL DLIM D IS=100U
.ENDS
*SRC=DMN2040LSD;DI_DMN2040LSD;MOSFETs N;Enh;20.0V 7.00A 26.0mohms Diodes Inc MO
SFET
*SYM=POWMOSN
.SUBCKT DI_DMN2040LSD 10 20 30
*
TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 11.3m
RS 40 3 1.65m
RG 20 2 21.4
CGS 2 3 497p
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 458p
R1 13 0 1.00
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1.00
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 7.50n
.MODEL DMOS NMOS(LEVEL=3 VMAX=41.7k THETA=80.0m
+ ETA=1.54m VTO=1.20 KP=59.7
.MODEL DCGD D (CJO=458p VJ=0.600 M=0.680
.MODEL DSUB D (IS=29.1n N=1.50 RS=21.4m BV=20.0
+ CJO=112p VJ=0.800 M=0.420 TT=234n
.MODEL DLIM D (IS=100U)
.ENDS
*SRC=DMN2050L;DI_DMN2050L;MOSFETs N;Enh;20.0V 5.90A 29.0mohms Diodes Inc MOSFET
*SYM=POWMOSN
.SUBCKT DI_DMN2050L 10 20 30
*
TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 12.8m
RS 40 3 1.72m
RG 20 2 25.4
CGS 2 3 415p
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 825p
R1 13 0 1.00
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1.00
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 7.50n
.MODEL DMOS NMOS(LEVEL=3 VMAX=41.7k THETA=80.0m
+ ETA=1.83m VTO=1.40 KP=75.8
.MODEL DCGD D (CJO=825p VJ=0.600 M=0.680
.MODEL DSUB D (IS=24.5n N=1.50 RS=25.4m BV=20.0
+ CJO=215p VJ=0.800 M=0.420 TT=234n
.MODEL DLIM D (IS=100U)
.ENDS
*SRC=DMN2075U;DI_DMN2075U;MOSFETs N;Enh;20.0V 4.20A 38.0mohms Diodes Inc MOSFET
*SYM=POWMOSN
.SUBCKT DI_DMN2075U 10 20 30
*
TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 17.0m
RS 40 3 1.95m
RG 20 2 35.7
CGS 2 3 536p
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 409p
R1 13 0 1.00
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1.00
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 7.50n
.MODEL DMOS NMOS(LEVEL=3 VMAX=41.7k THETA=80.0m
+ ETA=2.00m VTO=1.00 KP=117
.MODEL DCGD D (CJO=409p VJ=0.600 M=0.680
.MODEL DSUB D (IS=17.4n N=1.50 RS=59.5m BV=20.0
+ CJO=97.0p VJ=0.800 M=0.420 TT=217n
.MODEL DLIM D (IS=100U)
.ENDS
*SRC=DMN2100UDM;DI_DMN2100UDM;MOSFETs N;Enh;20.0V 3.30A 55.0mohms Diodes Inc MO
SFET
.MODEL DI_DMN2100UDM NMOS( LEVEL=1 VTO=1.00 KP=10.7 GAMMA=1.24
+ PHI=.75 LAMBDA=50.9u RD=7.70m RS=7.70m
+ IS=1.65p PB=0.800 MJ=0.460 CBD=-238p
+ CBS=-286p CGSO=1.01u CGDO=840n CGBO=3.70u )
* -- Assumes default L=100U W=100U -*SRC=DMN2112SN;DI_DMN2112SN;MOSFETs N;Enh;20.0V 1.20A 0.100ohms DIODES INC MOSF
ET
.MODEL DI_DMN2112SN NMOS( LEVEL=1 VTO=1.20 KP=35.3 GAMMA=1.49
+ PHI=.75 LAMBDA=83.3u RD=14.0m RS=14.0m
+ IS=600f PB=0.800 MJ=0.460 CBD=248p
+ CBS=298p CGSO=540n CGDO=450n CGBO=1.21u )
* -- Assumes default L=100U W=100U -*SRC=DMN2114SN;DI_DMN2114SN;MOSFETs N;Enh;20.0V 1.20A 0.100ohms DIODES INC MOSF
ET
.MODEL DI_DMN2114SN NMOS( LEVEL=1 VTO=1.40 KP=21.8 GAMMA=1.74
+ PHI=.75 LAMBDA=83.3u RD=14.0m RS=14.0m
+ IS=600f PB=0.800 MJ=0.460 CBD=248p
+ CBS=298p CGSO=540n CGDO=450n CGBO=810n )
* -- Assumes default L=100U W=100U -*SRC=DMN2170U;DI_DMN2170U;MOSFETs N;Enh;20.0V 2.30A 70.0mohms Diodes Inc MOSFET
.MODEL DI_DMN2170U NMOS( LEVEL=1 VTO=1.00 KP=15.7 GAMMA=1.24
+ PHI=.75 LAMBDA=133u RD=9.80m RS=9.80m
+ IS=1.15p PB=0.800 MJ=0.460 CBD=92.7p
+ CBS=111p CGSO=408n CGDO=340n CGBO=1.42u )
* -- Assumes default L=100U W=100U -*SRC=DMN2215UDM;DI_DMN2215UDM;MOSFETs N;Enh;20.0V 2.00A 0.100ohms Diodes Inc MO
SFET
*SYM=POWMOSN
.SUBCKT DI_DMN2215UDM 10 20 30
*
TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 46.5m
RS 40 3 3.50m
RG 20 2 75.0
CGS 2 3 158p
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 211p
R1 13 0 1.00
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1.00
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 7.50n
.MODEL DMOS NMOS(LEVEL=3 VMAX=41.7k THETA=80.0m
+ ETA=2.00m VTO=1.00 KP=25.9Meg
.MODEL DCGD D (CJO=211p VJ=0.600 M=0.680
.MODEL DSUB D (IS=8.30n N=1.50 RS=0.175 BV=20.0
+ CJO=65.6p VJ=0.800 M=0.420 TT=174n
.MODEL DLIM D (IS=100U)
.ENDS
*SRC=DMN2230U;DI_DMN2230U;MOSFETs N;Enh;20.0V 2.00A 0.110ohms Diodes Inc MOSFET
.MODEL DI_DMN2230U NMOS( LEVEL=1 VTO=1.00 KP=10.4 GAMMA=1.24
+ PHI=.75 LAMBDA=127u RD=15.4m RS=15.4m
+ IS=1.00p PB=0.800 MJ=0.460 CBD=46.4p
+ CBS=55.6p CGSO=360n CGDO=300n CGBO=1.22u )
* -- Assumes default L=100U W=100U -*SRC=DMN3007LSS;DI_DMN3007LSS;MOSFETs N;Enh;30.0V 16.0A 7.00mohms Diodes Inc. M
OSFET
*SYM=POWMOSN
.SUBCKT DI_DMN3007LSS 10 20 30
*
TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 2.32m
RS 40 3 1.17m
RG 20 2 9.37
CGS 2 3 2.33n
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 3.48n
R1 13 0 1.00
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1.00
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 7.50n
.MODEL DMOS NMOS(LEVEL=3 VMAX=62.5k THETA=80.0m
+ ETA=1.50m VTO=2.10 KP=34.8
.MODEL DCGD D (CJO=3.48n VJ=0.600 M=0.680
.MODEL DSUB D (IS=66.4n N=1.50 RS=28.1m BV=30.0
+ CJO=763p VJ=0.800 M=0.420 TT=297n
.MODEL DLIM D (IS=100U)
.ENDS
*SRC=DMN3010LSS;DI_DMN3010LSS;MOSFETs N;Enh;30.0V 16.0A 9.00mohms Diodes Inc MO
SFET
*SYM=POWMOSN
.SUBCKT DI_DMN3010LSS 10 20 30
*
TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 3.27m
RS 40 3 1.22m
RG 20 2 9.37
CGS 2 3 1.68n
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 2.23n
R1 13 0 1.00
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1.00
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 7.50n
.MODEL DMOS NMOS(LEVEL=3 VMAX=62.5k THETA=80.0m
+ ETA=2.00m VTO=2.00 KP=41.4
.MODEL DCGD D (CJO=2.23n VJ=0.600 M=0.680
.MODEL DSUB D (IS=66.4n N=1.50 RS=28.1m BV=30.0
+ CJO=485p VJ=0.800 M=0.420 TT=324n
.MODEL DLIM D (IS=100U)
.ENDS
*SRC=DMN3030LSS;DI_DMN3030LSS;MOSFETs N;Enh;30.0V 7.00A 18.0mohms Diodes Inc MO
SFET
*SYM=POWMOSN
.SUBCKT DI_DMN3030LSS 10 20 30
*
TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 7.55m
RS 40 3 1.45m
RG 20 2 21.4
CGS 2 3 628p
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 852p
R1 13 0 1.00
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1.00
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 7.50n
.MODEL DMOS NMOS(LEVEL=3 VMAX=62.5k THETA=60.0m
+ ETA=2.00m VTO=3.00 KP=9.12Meg
.MODEL DCGD D (CJO=852p VJ=0.600 M=0.680
.MODEL DSUB D (IS=29.1n N=1.50 RS=64.3m BV=30.0
+ CJO=201p VJ=0.800 M=0.420 TT=253n
.MODEL DLIM D (IS=100U)
.ENDS
*SRC=DMN3031LSS;DI_DMN3031LSS;MOSFETs N;Enh;30.0V 9.00A 18.0mohms Diodes Inc MO
SFET
*SYM=POWMOSN
.SUBCKT DI_DMN3031LSS 10 20 30
*
TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 7.55m
RS 40 3 1.45m
RG 20 2 16.7
CGS 2 3 628p
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 852p
R1 13 0 1.00
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1.00
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 7.50n
.MODEL DMOS NMOS(LEVEL=3 VMAX=62.5k THETA=80.0m
+ ETA=1.56m VTO=2.10 KP=9.32Meg
.MODEL DCGD D (CJO=852p VJ=0.600 M=0.680
.MODEL DSUB D (IS=37.4n N=1.50 RS=50.0m BV=30.0
+ CJO=201p VJ=0.800 M=0.420 TT=253n
.MODEL DLIM D (IS=100U)
*SRC=DMN3033LDM;DI_DMN3033LDM;MOSFETs N;Enh;30.0V 6.90A 33.0mohms Diodes Inc MO
SFET
*SYM=POWMOSN
.SUBCKT DI_DMN3033LDM 10 20 30
*
TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 14.7m
RS 40 3 1.82m
RG 20 2 21.7
CGS 2 3 647p
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 761p
R1 13 0 1.00
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1.00
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 7.50n
.MODEL DMOS NMOS(LEVEL=3 VMAX=62.5k THETA=80.0m
+ ETA=2.00m VTO=2.10 KP=6.06
.MODEL DCGD D (CJO=761p VJ=0.600 M=0.680
.MODEL DSUB D (IS=28.6n N=1.50 RS=50.7m BV=30.0
+ CJO=203p VJ=0.800 M=0.420 TT=252n
.MODEL DLIM D (IS=100U)
.ENDS
*SRC=DMN3033LSD;DI_DMN3033LSD;MOSFETs N;Enh;30.0V 6.90A 22.0mohms Diodes Inc MO
SFET
*SYM=POWMOSN
.SUBCKT DI_DMN3033LSD 10 20 30
*
TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 9.45m
RS 40 3 1.55m
RG 20 2 21.7
CGS 2 3 633p
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 843p
R1 13 0 1.00
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1.00
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 7.50n
.MODEL DMOS NMOS(LEVEL=3 VMAX=62.5k THETA=60.0m
+ ETA=2.00m VTO=3.00 KP=13.5
.MODEL DCGD D (CJO=843p VJ=0.600 M=0.680
.MODEL DSUB D (IS=28.6n N=1.50 RS=65.2m BV=30.0
+ CJO=200p VJ=0.800 M=0.420 TT=252n
.MODEL DLIM D (IS=100U)
.ENDS
*SRC=DMN3033LSN;DI_DMN3033LSN;MOSFETs N;Enh;30.0V 6.00A 30.0mohms DIODES INC MO
SFET
.MODEL DI_DMN3033LSN NMOS( LEVEL=1 VTO=2.10 KP=3.12u GAMMA=2.60
+ PHI=.75 LAMBDA=56.2u RD=4.20m RS=4.20m
+ IS=3.00p PB=0.800 MJ=0.460 CBD=92.7p
+ CBS=111p CGSO=1.30u CGDO=1.08u CGBO=5.17u )
* -- Assumes default L=100U W=100U -*SRC=DMN3050S;DI_DMN3050S;MOSFETs N;Enh;30.0V 5.20A 50.0mohms Diodes Inc MOSFET
*SYM=POWMOSN
.SUBCKT DI_DMN3050S 10 20 30
*
TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 22.7m
RS 40 3 2.25m
RG 20 2 80.8
CGS 2 3 345p
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 412p
R1 13 0 1.00
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1.00
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 7.50n
.MODEL DMOS NMOS(LEVEL=3 VMAX=62.5k THETA=60.0m
+ ETA=2.00m VTO=3.00 KP=15.4
.MODEL DCGD D (CJO=412p VJ=0.600 M=0.680
.MODEL DSUB D (IS=21.6n N=1.50 RS=48.1m BV=30.0
+ CJO=96.3p VJ=0.800 M=0.420 TT=231n
.MODEL DLIM D (IS=100U)
.ENDS
*SRC=DMN3051L;DI_DMN3051L;MOSFETs N;Enh;30.0V 5.80A 38.0mohms Diodes Inc MOSFET
*SYM=POWMOSN
.SUBCKT DI_DMN3051L 10 20 30
*
TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 17.0m
RS 40 3 1.95m
RG 20 2 47.0
CGS 2 3 343p
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 370p
R1 13 0 1.00
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1.00
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 7.50n
.MODEL DMOS NMOS(LEVEL=3 VMAX=62.5k THETA=80.0m
+ ETA=2.00m VTO=2.20 KP=15.6
.MODEL DCGD D (CJO=370p VJ=0.600 M=0.680
.MODEL DSUB D (IS=24.1n N=1.50 RS=70.7m BV=30.0
+ CJO=132p VJ=0.800 M=0.420 TT=239n
.MODEL DLIM D (IS=100U)
.ENDS
*SRC=DMN3051LDM;DI_DMN3051LDM;MOSFETs N;Enh;30.0V 4.00A 38.0mohms
*SYM=POWMOSN
.SUBCKT DI_DMN3051LDM 10 20 30
*
TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 17.0m
RS 40 3 1.95m
RG 20 2 47.0
CGS 2 3 343p
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 370p
R1 13 0 1.00
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1.00
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 7.50n
.MODEL DMOS NMOS(LEVEL=3 VMAX=62.5k THETA=80.0m
+ ETA=2.00m VTO=2.20 KP=16.9
.MODEL DCGD D (CJO=370p VJ=0.600 M=0.680
.MODEL DSUB D (IS=16.6n N=1.50 RS=0.102 BV=30.0
+ CJO=132p VJ=0.800 M=0.420 TT=214n
.MODEL DLIM D (IS=100U)
.ENDS
*SRC=DMN3052L;DI_DMN3052L;MOSFETs N;Enh;30.0V 5.40A 32.0mohms Diodes Inc MOSFET
*SYM=POWMOSN
.SUBCKT DI_DMN3052L 10 20 30
*
TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 14.2m
RS 40 3 1.80m
RG 20 2 27.8
CGS 2 3 473p
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 374p
R1 13 0 1.00
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1.00
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 7.50n
.MODEL DMOS NMOS(LEVEL=3 VMAX=62.5k THETA=80.0m
+ ETA=2.00m VTO=1.20 KP=40.0
.MODEL DCGD D (CJO=374p VJ=0.600 M=0.680
.MODEL DSUB D (IS=22.4n N=1.50 RS=83.3m BV=30.0
+ CJO=125p VJ=0.800 M=0.420 TT=234n
.MODEL DLIM D (IS=100U)
.ENDS
*SRC=DMN3052LSS;DI_DMN3052LSS;MOSFETs N;Enh;30.0V 7.10A 30.0mohms DIodes Inc MO
SFET
*SYM=POWMOSN
.SUBCKT DI_DMN3052LSS 10 20 30
*
TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 13.2m
RS 40 3 1.75m
RG 20 2 21.1
CGS 2 3 471p
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 384p
R1 13 0 1.00
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1.00
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 7.50n
.MODEL DMOS NMOS(LEVEL=3 VMAX=62.5k THETA=80.0m
+ ETA=2.00m VTO=1.20 KP=38.0
.MODEL DCGD D (CJO=384p VJ=0.600 M=0.680
.MODEL DSUB D (IS=29.5n N=1.50 RS=57.7m BV=30.0
+ CJO=125p VJ=0.800 M=0.420 TT=254n
.MODEL DLIM D (IS=100U)
.ENDS
*SRC=DMN3112S;DI_DMN3112S;MOSFETs N;Enh;30.0V 5.80A 57.0mohms Diodes Inc MOSFET
*SYM=POWMOSN
.SUBCKT DI_DMN3112S 10 20 30
*
TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 26.1m
RS 40 3 2.42m
RG 20 2 105
CGS 2 3 218p
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 228p
R1 13 0 1.00
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1.00
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 7.50n
.MODEL DMOS NMOS(LEVEL=3 VMAX=62.5k THETA=80.0m
+ ETA=2.00m VTO=2.20 KP=10.2
.MODEL DCGD D (CJO=228p VJ=0.600 M=0.680
.MODEL DSUB D (IS=24.1n N=1.50 RS=60.3m BV=30.0
+ CJO=83.9p VJ=0.800 M=0.420 TT=239n
.MODEL DLIM D (IS=100U)
.ENDS
*SRC=DMN3112SSS;DI_DMN3112SSS;MOSFETs N;Enh;30.0V 6.00A 57.0mohms Diodes Inc MO
SFET
*SYM=POWMOSN
.SUBCKT DI_DMN3112SSS 10 20 30
*
TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 26.1m
RS 40 3 2.42m
RG 20 2 56.0
CGS 2 3 218p
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 458p
R1 13 0 1.00
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1.00
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 7.50n
.MODEL DMOS NMOS(LEVEL=3 VMAX=62.5k THETA=80.0m
+ ETA=1.93m VTO=2.20 KP=4.11
.MODEL DCGD D (CJO=458p VJ=0.600 M=0.680
.MODEL DSUB D (IS=24.9n N=1.50 RS=75.0m BV=30.0
+ CJO=128p VJ=0.800 M=0.420 TT=239n
.MODEL DLIM D (IS=100U)
.ENDS
*SRC=DMN3115UDM;DI_DMN3115UDM;MOSFETs N;Enh;30.0V 3.20A 60.0mohms Diodes Inc MO
SFET
.MODEL DI_DMN3115UDM NMOS( LEVEL=1 VTO=1.00 KP=10.7 GAMMA=1.24
+ PHI=.75 LAMBDA=50.9u RD=8.40m RS=8.40m
+ IS=1.60p PB=0.800 MJ=0.460 CBD=76.2p
+ CBS=91.4p CGSO=648n CGDO=540n CGBO=3.57u )
* -- Assumes default L=100U W=100U -*SRC=DMN3150L;DI_DMN3150L;MOSFETs N;Enh;28.0V 3.10A 85.0mohms DIODES INC MOSFET
.MODEL DI_DMN3150L NMOS( LEVEL=1 VTO=1.40 KP=2.90u GAMMA=1.74
+ PHI=.75 LAMBDA=145u RD=11.9m RS=11.9m
+ IS=1.55p PB=0.800 MJ=0.460 CBD=64.7p
+ CBS=77.6p CGSO=576n CGDO=480n CGBO=1.99u )
* -- Assumes default L=100U W=100U -*SRC=DMN3150LW;DI_DMN3150LW;MOSFETs N;Enh;28.0V 1.60A 88.0mohms Diodes Inc MOSF
ET
*SYM=POWMOSN
.SUBCKT DI_DMN3150LW 10 20 30
*
TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 40.8m
RS 40 3 3.20m
RG 20 2 93.7
CGS 2 3 257p
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 219p
R1 13 0 1.00
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1.00
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 7.50n
.MODEL DMOS NMOS(LEVEL=3 VMAX=58.3k THETA=80.0m
+ ETA=2.00m VTO=1.40 KP=21.8
.MODEL DCGD D (CJO=219p VJ=0.600 M=0.680
.MODEL DSUB D (IS=6.64n N=1.50 RS=0.256 BV=28.0
+ CJO=85.0p VJ=0.800 M=0.420 TT=162n
.MODEL DLIM D (IS=100U)
.ENDS
*SRC=DMN3200U;DI_DMN3200U;MOSFETs N;Enh;30.0V 2.20A 90.0mohms Diodes Inc MOSFET
.MODEL DI_DMN3200U NMOS( LEVEL=1 VTO=1.00 KP=11.4 GAMMA=1.24
+ PHI=.75 LAMBDA=139u RD=12.6m RS=12.6m
+ IS=1.10p PB=0.800 MJ=0.460 CBD=103p
+ CBS=123p CGSO=420n CGDO=350n CGBO=2.13u )
* -- Assumes default L=100U W=100U -*SRC=DMN32D2LDF;DI_DMN32D2LDF;MOSFETs N;Enh;30.0V 0.400A 1.20ohms Diodes Inc MO
SFET
.MODEL DI_DMN32D2LDF NMOS( LEVEL=1 VTO=1.20 KP=0.100 GAMMA=1.49
+ PHI=.75 LAMBDA=555u RD=0.168 RS=0.168
+ IS=200f PB=0.800 MJ=0.460 CBD=13.1p
+ CBS=15.7p CGSO=43.2n CGDO=36.0n CGBO=311n )
* -- Assumes default L=100U W=100U -*SRC=DMN32D2LFB4;DMN32D2LFB4_DI;MOSFETs N;Enh;30.0V 0.300A 2.20ohms Diodes Inc
MOSFET
.MODEL DMN32D2LFB4_DI NMOS( LEVEL=1 VTO=1.20 KP=0.100 GAMMA=1.49
+ PHI=.75 LAMBDA=416u RD=0.308 RS=0.308
+ IS=150f PB=0.800 MJ=0.460 CBD=13.1p
+ CBS=15.7p CGSO=43.2n CGDO=36.0n CGBO=311n )
* -- Assumes default L=100U W=100U -*SRC=DMN32D2LV;???;MOSFETs N;Enh;30.0V 0.400A 1.20ohms Diodes, Inc.
.MODEL ??? NMOS( LEVEL=1 VTO=-1.20 KP=0.100 GAMMA=1.49
+ PHI=.75 LAMBDA=556u RD=0.168 RS=0.168
+ IS=200f PB=0.800 MJ=0.460 CBD=13.1p
+ CBS=15.7p CGSO=43.2n CGDO=36.0n CGBO=1.37u )
* -- Assumes default L=100U W=100U -*SRC=DMN3300U;DI_DMN3300U;MOSFETs N;Enh;30.0V 2.00A 0.150ohms Diodes Inc MOSFET
.MODEL DI_DMN3300U NMOS( LEVEL=1 VTO=1.00 KP=10.4 GAMMA=1.24
+ PHI=.75 LAMBDA=127u RD=21.0m RS=21.0m
+ IS=1.00p PB=0.800 MJ=0.460 CBD=39.7p
+ CBS=47.7p CGSO=276n CGDO=230n CGBO=1.42u )
* -- Assumes default L=100U W=100U -*SRC=DMN3404L;DI_DMN3404L;MOSFETs N;Enh;30.0V 4.30A 28.0mohms Diodes Inc MOSFET
*SYM=POWMOSN
.SUBCKT DI_DMN3404L 10 20 30
*
TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 12.3m
RS 40 3 1.70m
RG 20 2 44.2
CGS 2 3 347p
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 357p
R1 13 0 1.00
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1.00
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 7.50n
.MODEL DMOS NMOS(LEVEL=3 VMAX=62.5k THETA=80.0m
+ ETA=3.02m VTO=2.00 KP=33.4
.MODEL DCGD D (CJO=357p VJ=0.600 M=0.680
.MODEL DSUB D (IS=17.8n N=1.50 RS=58.1m BV=30.0
+ CJO=77.0p VJ=0.800 M=0.420 TT=247n
.MODEL DLIM D (IS=100U)
.ENDS
*SRC=DMN4468LSS;DI_DMN4468LSS;MOSFETs N;Enh;30.0V 8.70A 14.0mohms Diodes Inc MO
SFET
*SYM=POWMOSN
.SUBCKT DI_DMN4468LSS 10 20 30
*
TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 5.65m
RS 40 3 1.35m
RG 20 2 20.0
CGS 2 3 852p
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 108p
R1 13 0 1.00
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1.00
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 7.50n
.MODEL DMOS NMOS(LEVEL=3 VMAX=62.5k THETA=80.0m
+ ETA=1.61m VTO=1.95 KP=10.7
.MODEL DCGD D (CJO=108p VJ=0.600 M=0.680
.MODEL DSUB D (IS=36.1n N=1.50 RS=21.8m BV=30.0
+ CJO=208p VJ=0.800 M=0.420 TT=253n
.MODEL DLIM D (IS=100U)
.ENDS
*SRC=DMN4800LSS;DI_DMN4800LSS;MOSFETs N;Enh;30.0V 10.0A 14.0mohms Diodes Inc MO
SFET
*SYM=POWMOSN
.SUBCKT DI_DMN4800LSS 10 20 30
*
TERMINALS: D G S
M1 1 2 3 3 DMOS L=1U W=1U
RD 10 1 5.65m
RS 40 3 1.35m
RG 20 2 15.0
CGS 2 3 775p
EGD 12 0 2 1 1
VFB 14 0 0
FFB 2 1 VFB 1
CGD 13 14 162p
R1 13 0 1.00
D1 12 13 DLIM
DDG 15 14 DCGD
R2 12 15 1.00
D2 15 0 DLIM
DSD 3 10 DSUB
LS 30 40 7.50n
.MODEL DMOS NMOS(LEVEL=3 VMAX=62.5k THETA=80.0m
+ ETA=1.40m VTO=1.60 KP=13.8
.MODEL DCGD D (CJO=162p VJ=0.600 M=0.680
.MODEL DSUB D (IS=41.5n N=1.50 RS=19.0m BV=30.0
+ CJO=313p VJ=0.800 M=0.420 TT=253n
.MODEL DLIM D (IS=100U)
.ENDS
*
*ZETEX ZXMN61N02F Spice Model v1.0 Last Revised 24/2/04
*
.SUBCKT ZXM61N02F 3 4 5
*----connections----D-G-S
*
M1 6 20 8 8 MOSMOD
M2 6 20 8 8 MOSMODS
RG 4 2 6
RIN 2 8 200E6
RD 3 6 RMOD1 0.03
RS 8 5 RMOD1 0.0225
RL 3 5 35E6
C1 2 8 158E-12
C3 15 14 175E-12
C4 16 8 183E-12
D1 5 3 DMOD1
D2 17 3 DMOD2
S1 2 15 14 13 SMOD1a
S2 13 15 14 13 SMOD1b
S3 16 13 13 8 SMOD2a
S4 16 2 13 8 SMOD2b
Egs1 2 17 2 8 1
Egs2 13 8 2 8 1
Eds1 14 8 3 8 1
Egt1 2 20 21 8 -1
Vgt1 8 22 1
Igt1 8 21 1
Rgt 21 22 RMOD2 1
.MODEL MOSMOD NMOS VTO=1.35 IS=1E-15 KP=5.5 CBD=90E-12 LAMBDA=4.9E-3
.MODEL MOSMODS NMOS VTO=0.95 IS=1E-15 KP=0.055
.MODEL DMOD1 D IS=1E-13 RS=0.15 BV=24 IBV=1E-6 TT=9e-9
.MODEL DMOD2 D CJO=190e-12 IS=1e-30 N=10
.MODEL SMOD1a VSWITCH RON=1e-2 ROFF=1e4 VON=-1.75 VOFF=2.75
.MODEL SMOD1b VSWITCH RON=1e-2 ROFF=1e4 VON=2.75 VOFF=-1.75
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*Zetex ZXM62N03G Spice Model v1.0 Last Revised 24/1/03
*
.SUBCKT ZXM62N03G 3 4 5
*----connections----D-G-S
*
M1 6 2 8 8 MOSMOD
M2 6 2 8 8 MOSMODS
RG 4 2 5
RIN 2 8 200E6
RD 3 6 RDSMOD 0.051
RS 8 5 RDSMOD 0.0093
RL 3 5 35E6
C1 2 8 349E-12
C2 2 3 43E-12
C3 15 14 453E-12
C4 16 8 474E-12
D1 5 3 DMOD1
S1 2 15 14 13 SMOD1a
S2 13 15 14 13 SMOD1b
S3 16 13 13 8 SMOD2a
S4 16 2 13 8 SMOD2b
Egs2 13 8 2 8 1
Eds1 14 8 3 8 1
.MODEL MOSMOD NMOS VTO=2.2 IS=1E-15 KP=6.5 CBD=221E-12 LAMBDA=4.9E-3
.MODEL MOSMODS NMOS VTO=1.8 IS=1E-15 KP=0.04
.MODEL DMOD1 D IS=2.6E-13 RS=0.058 BV=38 IBV=1E-6 TT=21e-9
.MODEL SMOD1a VSWITCH RON=1e-2 ROFF=1e4 VON=-1.5 VOFF=1.5
.MODEL SMOD1b VSWITCH RON=1e-2 ROFF=1e4 VON=1.5 VOFF=-1.5
.MODEL SMOD2a VSWITCH RON=1e2 ROFF=1e4 VON=-1.5 VOFF=-3.5
.MODEL SMOD2b VSWITCH RON=1e-2 ROFF=1e4 VON=-3.5 VOFF=-1.5
.MODEL RDSMOD RES (TC1=3E-3 TC2=2E-5)
.ENDS ZXM62N03G
*
*$
*
*
(c) 2005 Zetex Semiconductors plc
*
* The copyright in these models and the designs embodied belong
* to Zetex Semiconductors plc (" Zetex "). They are supplied
* free of charge by Zetex for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Zetex PLC, its distributors
*
*
*
*
or agents.
Zetex Semiconductors plc, Zetex Technology Park, Chadderton,
Oldham, United Kingdom, OL9 9LL
*
*ZETEX ZXM64N02X Spice Model v1.0 Last revision 10/01/2005
*
.SUBCKT ZXM64N02X 3 4 5
*----connections----D-G-S
*
M1 6 20 8 8 MOSMOD
M2 6 20 8 8 MOSMODS
RG 4 2 1.7
RIN 2 8 200E6
RD 3 6 RDSMOD 0.02
RS 8 5 RDSMOD 0.004
RL 3 5 35E6
C1 2 8 1000E-12
C2 2 3 130E-12
C3 15 14 1150E-12
C4 16 8 1100E-12
D1 5 3 DMOD1
S1 2 15 14 13 SMOD1a
S2 13 15 14 13 SMOD1b
S3 16 13 13 8 SMOD2a
S4 16 2 13 8 SMOD2b
Egs2 13 8 2 8 1
Eds1 14 8 3 8 1
Egt1 20 2 5 21 1
Vgt1 5 22 1
Igt1 5 21 1
Rgt 21 22 RMOD2 1
.MODEL MOSMOD NMOS VTO=1.29 IS=1E-15 KP=35 LAMBDA=4.9E-3
.MODEL MOSMODS NMOS VTO=0.8 IS=1E-15 KP=0.35
.MODEL DMOD1 D IS=6E-13 RS=0.025 BV=22 CJO=750E-12 IBV=1E-6 TT=21e-9
.MODEL SMOD1a VSWITCH RON=1e-2 ROFF=1e4 VON=-1 VOFF=1.5
.MODEL SMOD1b VSWITCH RON=1e-2 ROFF=1e4 VON=1.5 VOFF=-1
.MODEL SMOD2a VSWITCH RON=1e2 ROFF=1e4 VON=-1.5 VOFF=-3.5
.MODEL SMOD2b VSWITCH RON=1e-2 ROFF=1e4 VON=-3.5 VOFF=-1.5
.MODEL RDSMOD RES (TC1=2.3E-3 TC2=0.8E-5)
.MODEL RMOD2 RES (TC1=-1.9e-3 TC2=1e-6)
.ENDS ZXM64N02X
*
*$
*
*
(c) 2005 Zetex Semiconductors plc
*
* The copyright in these models and the designs embodied belong
* to Zetex Semiconductors plc ("Zetex"). They are supplied
* free of charge by Zetex for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Zetex PLC, its distributors
* or agents.
*
* Zetex Semiconductors plc, Zetex Technology Park, Chadderton,
* Oldham, United Kingdom, OL9 9LL
*
*ZETEX ZXMD63N02X Mosfet Spice Subcircuit Last revision 3/7/00
*
.SUBCKT ZXMD63N02X 3 4 5
*
D G S
M1 3 2 5 5 M63N02
RG 4 2 18
RL 3 5 1E9
C1 2 5 700E-12
C2 3 2 50E-12
D1 5 3 D63N02
*
.MODEL M63N02 NMOS VTO=1.40 RS=0.04 RD=0.02 KP=15
+CBD=600E-12 LAMBDA=8.7E-3
.MODEL D63N02 D IS=4E-12 N=1.04 IKF=82E-3 RS=105E-3
.ENDS ZXMD63N02X
*
*$
*
*ZETEX ZXMD63N03X Mosfet Spice Subcircuit Last revision 3/7/00
*
.SUBCKT ZXMD63N03X 3 4 5
*
D G S
M1 3 2 5 5 M63N03
RG 4 2 18
RL 3 5 1E9
C1 2 5 450E-12
C2 3 2 35E-12
D1 5 3 D63N03
*
*ZETEX ZXMD63N02X Mosfet Spice Subcircuit Last revision 3/7/00
*
.MODEL M63N03 NMOS VTO=2.40 RS=0.045 RD=0.025 KP=6.5
+CBD=400E-12 LAMBDA=4.9E-3
.MODEL D63N03 D IS=4E-13 N=1.04 IKF=187E-3 RS=113E-3
.ENDS ZXMD63N03X
*
*$
*
*Zetex ZXMN2A01E6 Spice Model v2.0 Last Revised 22/2/05
*
.SUBCKT ZXMN2A01E6 30 40 50
*------connections-------D-G-S
M1 6 20 5 5 Nmod L=1.16E-6 W=0.46
M2 5 20 5 6 Pmod L=1.3E-6 W=0.22
RG 4 2 5
RIN 2 5 1E12
RD 3 6 Rmod1 0.036
RL 3 5 3E9
C1 2 5 8.5E-12
C2 3 4 3E-12
D1 5 3 Dbodymod
Egt1 2 20 21 5 1
Vgt1 5 22 1
Igt1 5 21 1
Rgt 21 22 Rmod2 1
LD 3 30 0.3E-9
LG 4 40 1.9E-9
LS 5 50 1.9E-9
.MODEL Nmod NMOS (LEVEL=3 TOX=4.5E-8 NSUB=3.5E16 VTO=1.31
+KP=4E-5 RS=.03 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10)
.MODEL Pmod PMOS (LEVEL=3 TOX=4.5E-8 NSUB=3.3E16
+TPG=-1 IS=1E-15 N=10)
.MODEL Dbodymod D (IS=5E-12 RS=.025 IKF=0.1 TRS1=1.5e-3
+CJO=230e-12 BV=23)
.MODEL Rmod1 RES (TC1=5.8e-3 TC2=1.3E-5)
.MODEL Rmod2 RES (TC1=-3e-4 TC2=0)
.ENDS
*
*$
*
*
(c) 2005 Zetex Semiconductors plc
*
* The copyright in these models and the designs embodied belong
* to Zetex Semiconductors plc (" Zetex "). They are supplied
* free of charge by Zetex for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Zetex PLC, its distributors
* or agents.
*
* Zetex Semiconductors plc, Zetex Technology Park, Chadderton,
* Oldham, United Kingdom, OL9 9LL
*
*Zetex ZXMN2A01F Spice Model v2.0 Last Revised 22/2/05
*
.SUBCKT ZXMN2A01F 30 40 50
*------connections-------D-G-S
M1 6 20 5 5 Nmod L=1.16E-6 W=0.46
M2 5 20 5 6 Pmod L=1.3E-6 W=0.22
RG 4 2 5
RIN 2 5 1E12
RD 3 6 Rmod1 0.036
RL 3 5 3E9
C1 2 5 8.5E-12
C2 3 4 3E-12
D1 5 3 Dbodymod
Egt1 2 20 21 5 1
Vgt1 5 22 1
Igt1 5 21 1
Rgt 21 22 Rmod2 1
LD 3 30 0.5E-9
LG 4 40 1.0E-9
LS 5 50 1.0E-9
.MODEL Nmod NMOS (LEVEL=3 TOX=4.5E-8 NSUB=3.5E16 VTO=1.31
+KP=4E-5 RS=.03 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10)
.MODEL Pmod PMOS (LEVEL=3 TOX=4.5E-8 NSUB=3.3E16
+TPG=-1 IS=1E-15 N=10)
.MODEL Dbodymod D (IS=5E-12 RS=.025 IKF=0.1 TRS1=1.5e-3
+CJO=230e-12 BV=23)
.MODEL Rmod1 RES (TC1=5.8e-3 TC2=1.3E-5)
.MODEL Rmod2 RES (TC1=-3e-4 TC2=0)
.ENDS ZXMN2A01F
*
*$
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*
*Zetex ZXMN2A02N8 Spice Model v2.0 Last Revised 22/2/05
*
.SUBCKT ZXMN2A02N8 30 40 50
*---connections---D-G-S
M1 6 2 7 7 Nmod L=1.16E-6 W=2.3
M2 7 2 7 6 Pmod L=1.3E-6 W=1.3
RG 4 2 1
RIN 2 5 1E12
RD 3 6 Rdmod 0.0045
RS 7 5 Rdmod 0.01
RL 3 5 3E9
C1 2 5 10E-12
C2 3 2 5E-12
D1 5 3 Dbodymod
LD 3 30 1.3E-9
LG 4 40 1.2E-9
LS 5 50 1.2E-9
.MODEL Nmod NMOS (LEVEL=3 TOX=4.5E-8 NSUB=10E16
+VTO=1.365 KP=3.6E-5 NFS=2E11 KAPPA=0.1 UO=650 IS=1E-15 N=10)
.MODEL Pmod PMOS (LEVEL=3 TOX=4.5E-8 NSUB=1.5E16
+TPG=-1 IS=1E-15 N=10)
.MODEL Dbodymod D (IS=2E-11 RS=.015 XTI=1.5 TRS1=1.5e-3 TT=7e-9
+CJO=450e-12 BV=22)
.MODEL Rdmod RES (TC1=3e-3 TC2=6E-6)
.ENDS
*
*$
*
*
(c) 2005 Zetex Semiconductors plc
*
* The copyright in these models and the designs embodied belong
* to Zetex Semiconductors plc (" Zetex "). They are supplied
* free of charge by Zetex for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Zetex PLC, its distributors
* or agents.
*
* Zetex Semiconductors plc, Zetex Technology Park, Chadderton,
* Oldham, United Kingdom, OL9 9LL
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=22/02/2005
*VERSION=2
*PIN_ORDER
D G S
*
.SUBCKT ZXMN2A02X8 30 40 50
M1 6 2 7 7 Nmod L=1.16E-6 W=2.3
M2 7 2 7 6 Pmod L=1.3E-6 W=1.3
RG 4 2 1
RIN 2 5 1E12
RD 3 6 Rdmod 0.0045
RS 7 5 Rdmod 0.01
RL 3 5 3E9
C1 2 5 10E-12
C2 3 2 5E-12
D1 5 3 Dbodymod
LD 3 30 1.5E-9
LG 4 40 1.0E-9
LS 5 50 1.0E-9
.MODEL Nmod NMOS (LEVEL=3 TOX=4.5E-8 NSUB=10E16
+VTO=1.365 KP=3.6E-5 NFS=2E11 KAPPA=0.1 UO=650 IS=1E-15 N=10)
.MODEL Pmod PMOS (LEVEL=3 TOX=4.5E-8 NSUB=1.5E16
+TPG=-1 IS=1E-15 N=10)
.MODEL Dbodymod D (IS=2E-11 RS=.015 XTI=1.5 TRS1=1.5e-3 TT=7e-9
+CJO=450e-12 BV=22)
.MODEL Rdmod RES (TC1=3e-3 TC2=6E-6)
.ENDS
*
*$
*
*ZETEX ZXMN2A03E6 Spice Model v1.0 Last Revised 11/08/05
*
.SUBCKT ZXMN2A03E6 30 40 50
*------connections-------D-G-S
M1 6 20 5 5 Nmod
M2 5 20 5 6 Pmod
RG 4 2 1
RIN 2 5 1E12
RD 3 6 Rmod1 0.04
RL 3 5 3E9
C1 2 5 1.5E-10
C2 3 4 2.5E-10
D1 5 3 Dbodymod
Egt1 2 20 21 5 1
Vgt1 5 22 1
Igt1 5 21 1
Rgt 21 22 Rmod2 1.45
LD 3 30 0.3E-9
LG 4 40 1.9E-9
LS 5 50 1.9E-9
.MODEL Nmod NMOS (LEVEL=3 L=0.7E-6 W=0.77 TOX=45E-9 NSUB=4.09E16 UO=929)
+VTO=0.9 KP=34E-6 GAMMA=1.52 PHI=0.77 RS=0.02 KAPPA=0.01)
.MODEL Pmod PMOS (LEVEL=3 L=0.6E-6 W=0.8 TOX=70E-9 NSUB=4.09E16 UO=373)
.MODEL Dbodymod D (IS=2E-11 N=1 IKF=3 RS=0.05 TRS1=1E-5 TRS2=3E-5 XTI=0.1)
.MODEL Rmod1 RES (TC1=0 TC2=0)
.SUBCKT ZXMN2B01F 30 40 50
*------connections-------D-G-S
M1 6 2 5 5 Nmod L=1.16E-6 W=0.55
M2 5 2 5 6 Pmod L=1.2E-6 W=0.22
RG 4 22 4.2
RIN 2 5 1E12
RD 3 6 Rmod1 0.05
RL 3 5 3E9
C1 2 5 10E-12
C2 3 4 3E-12
D1 5 3 Dmod1
Rt 5 61 Rmod2 1
Vt 61 62 1
It 5 62 1
Et 2 22 62 5 1
LD 3 30 0.5E-9
LG 4 40 1.0E-9
LS 5 50 1.0E-9
.MODEL Nmod NMOS (LEVEL=3 TOX=3.5E-8 NSUB=1E17 VTO=0.66
+KP=7E-5 RS=.025 KAPPA=0.07 NFS=2E11 IS=1E-15 N=10)
.MODEL Pmod PMOS (LEVEL=3 TOX=3.5E-8 NSUB=4.1E16
+TPG=-1 IS=1E-15 N=10)
.MODEL Dmod1 D (IS=6E-13 RS=.025 IKF=0.1 TRS1=3e-3 TT=0.6E-8
+CJO=115e-12 BV=23)
.MODEL Rmod1 RES (TC1=4.6e-3 TC2=0.9E-5)
.MODEL Rmod2 RES (TC1=-1.4e-3 TC2=0E-5)
.ENDS ZXMN2B01F
*
*$
*
*
(c) 2007 Zetex Semiconductors plc
*
* The copyright in these models and the designs embodied belong
* to Zetex Semiconductors plc (" Zetex "). They are supplied
* free of charge by Zetex for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Zetex, its distributors
* or agents.
*
* Zetex Semiconductors plc, Zetex Technology Park, Chadderton,
* Oldham, United Kingdom, OL9 9LL
*
*Zetex ZXMN2B03E6 Spice Model v1.0 Last Revised 7/12/07
*
.SUBCKT ZXMN2B03E6 30 40 50
*------connections-------D-G-S
M1 6 2 5 5 Nmod L=1.16E-6 W=1.83
M2 5 2 5 6 Pmod L=1.2E-6 W=0.67
RG 4 22 1.5
RIN 2 5 1E12
RD 3 6 Rmod1 0.015
RL 3 5 3E9
C1 2 5 10E-12
C2 3 4 3E-12
D1 5 3 Dmod1
Rt 5 61 Rmod2 1
Vt 61 62 1
It 5 62 1
Et 2 22 62 5 1
LD 3 30 0.5E-9
LG 4 40 1.0E-9
LS 5 50 1.0E-9
.MODEL Nmod NMOS (LEVEL=3 TOX=3.5E-8 NSUB=1E17 VTO=0.8
+KP=7E-5 RS=.020 NFS=1E11 KAPPA=0.06 IS=1E-15 N=10)
.MODEL Pmod PMOS (LEVEL=3 TOX=3.5E-8 NSUB=4.1E16
+TPG=-1 IS=1E-15 N=10)
.MODEL Dmod1 D (IS=1E-11 RS=.05 IKF=.5 TT=0.6E-8
+CJO=200e-12 BV=23)
.MODEL Rmod1 RES (TC1=8e-3 TC2=0.9E-5)
.MODEL Rmod2 RES (TC1=-1.2e-3 TC2=-1E-6)
.ENDS ZXMN2B03E6
*
*$
*
*
(c) 2007 Zetex Semiconductors plc
*
* The copyright in these models and the designs embodied belong
* to Zetex Semiconductors plc (" Zetex "). They are supplied
* free of charge by Zetex for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Zetex, its distributors
* or agents.
*
* Zetex Semiconductors plc, Zetex Technology Park, Chadderton,
* Oldham, United Kingdom, OL9 9LL
*
*Zetex ZXMN2B14FH Spice Model v1.0 Last Revised 30/11/07
*
.SUBCKT ZXMN2B14FH 30 40 50
*------connections-------D-G-S
M1 6 2 5 5 Nmod L=1E-6 W=1.1
M2 5 2 5 6 Pmod L=1E-6 W=0.55
RG 4 22 2.8
RIN 2 5 1E12
RD 3 6 Rmod1 0.03
RL 3 5 3E9
C1 2 5 300E-12
C2 3 4 3E-12
D1 5 3 Dmod1
Rt 5 61 Rmod2 1
Vt 61 62 1
It 5 62 1
Et 2 22 62 5 1
LD 3 30 0.5E-9
LG 4 40 1.0E-9
LS 5 50 1.0E-9
.MODEL Nmod NMOS (LEVEL=3 TOX=3.5E-8 NSUB=1E17 VTO=0.84
+KP=3.7E-5 RS=.006 NFS=1E11 KAPPA=0.06 IS=1E-15 N=10)
.MODEL Pmod PMOS (LEVEL=3 TOX=3.5E-8 NSUB=4.1E16
+TPG=-1 IS=1E-15 N=10)
.MODEL Dmod1 D (IS=1E-11 RS=.03 IKF=.5 TRS1=3e-3 TT=0.6E-8
+CJO=200e-12 BV=23)
*
*
*
*
*
*
*
*
*
*
*
*
*
A
*
*Zetex ZXMN2F34MA Spice Model v1.0 Last Revised 31/07/08
*
.SUBCKT ZXMN2F34MA 3 4 5
*------connections-------D-G-S
M1 6 20 8 8 Nmod
RG 4 2 7
RD 3 6 Rmod1 0.025
RS 8 5 Rmod1 0.0033
RL 3 5 100E6
D1 5 3 Dmod1
I1 8 21 1
V1 22 21 1
RT 22 8 Rmod2 1
Et 2 20 21 8 1
Egs2 13 8 2 8 1
Eds1 14 8 3 8 1
C1 2 8 200E-12
C2 2 3 40E-12
C3 15 14 270E-12
C4 16 8 230E-12
S1 2 15 14 13 SMOD1
S2 13 15 14 13 SMOD2
S3 16 13 13 8 SMOD3
S4 16 2 13 8 SMOD4
.MODEL SMOD1 VSWITCH RON=.001 ROFF=100 VON=0.5 VOFF=1.5
.MODEL SMOD2 VSWITCH RON=.001 ROFF=100 VON=1.5 VOFF=0.5
.MODEL SMOD3 VSWITCH RON=.001 ROFF=100 VON=-2 VOFF=-3
.MODEL SMOD4 VSWITCH RON=.001 ROFF=100 VON=-3 VOFF=-2
.MODEL Nmod NMOS (LEVEL=3 VTO=1.574 KP=16 NFS=1.33E12 KAPPA=500 TOX=30E-9 NSU
B=1E16 IS=1E-15 N=10)
.MODEL Dmod1 D (IS=8.7E-14 RS=0.026 CJO=320E-12 VJ=0.55 M=0.45 TT=1e-9 TRS1=1e-4
BV=22)
.MODEL Rmod1 RES (TC1=3.1e-3 TC2=0.6E-5)
.MODEL Rmod2 RES (TC1=-1.9e-3 TC2=-6E-6)
.ENDS ZXMN2F34MA
*
*$
*
*
(c) 2008 Diodes Incorporated
*
* The copyright in these models and the designs embodied belong
* to Diodes Incorporated (" Diodes "). They are supplied
* free of charge by Diodes for the purpose of research and design
* and may be used or copied intact (including this notice) for
*
*
*
*
*
*
*
A
that purpose only. All other rights are reserved. The models
are believed accurate but no condition or warranty as to their
merchantability or fitness for purpose is given and no liability
in respect of any use is accepted by Diodes Incorporated, its distributors
or agents.
Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, US
*
*Zetex ZXMN3A01E6 Spice Model v2.0 Last Revised 22/2/05
*
.SUBCKT ZXMN3A01E6 30 40 50
*------connections-------D-G-S
M1 6 2 5 5 Nmod L=1.16E-6 W=0.28
M2 5 2 5 6 Pmod L=1.3E-6 W=0.13
RG 4 2 5
RIN 2 5 1E12
RD 3 6 Rdmod 0.08
RL 3 5 3E9
C1 2 5 8.5E-12
C2 3 4 3E-12
D1 5 3 Dbodymod
LD 3 30 0.3E-9
LG 4 40 1.9E-9
LS 5 50 1.9E-9
.MODEL Nmod NMOS (LEVEL=3 TOX=5.5E-8 NSUB=5E17 VTO=2.3
+KP=15E-5 RS=.045 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10)
.MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1.5E16
+TPG=-1 IS=1E-15 N=10)
.MODEL Dbodymod D (IS=6E-13 RS=.025 IKF=0.1 TRS1=1.5e-3
+CJO=85e-12 BV=33)
.MODEL Rdmod RES (TC1=4.2e-3 TC2=1E-5)
.ENDS ZXMN3A01E6
*
*$
*
*
(c) 2005 Zetex Semiconductors plc
*
* The copyright in these models and the designs embodied belong
* to Zetex Semiconductors plc (" Zetex "). They are supplied
* free of charge by Zetex for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Zetex PLC, its distributors
* or agents.
*
* Zetex Semiconductors plc, Zetex Technology Park, Chadderton,
* Oldham, United Kingdom, OL9 9LL
*
*Zetex ZXMN3A01F Spice Model v2.0 Last Revised 22/2/05
*
.SUBCKT ZXMN3A01F 30 40 50
*------connections-------D-G-S
M1 6 2 5 5 Nmod L=1.16E-6 W=0.28
M2 5 2 5 6 Pmod L=1.3E-6 W=0.13
RG 4 2 5
RIN 2 5 1E12
RD 3 6 Rdmod 0.08
RL 3 5 3E9
C1 2 5 8.5E-12
C2 3 4 3E-12
D1 5 3 Dbodymod
LD 3 30 0.5E-9
LG 4 40 1.0E-9
LS 5 50 1.0E-9
.MODEL Nmod NMOS (LEVEL=3 TOX=5.5E-8 NSUB=5E17 VTO=2.3
+KP=15E-5 RS=.045 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10)
.MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1.5E16
+TPG=-1 IS=1E-15 N=10)
.MODEL Dbodymod D (IS=6E-13 RS=.025 IKF=0.1 TRS1=1.5e-3
+CJO=85e-12 BV=33)
.MODEL Rdmod RES (TC1=4.2e-3 TC2=1E-5)
.ENDS ZXMN3A01F
*
*$
*
*
(c) 2005 Zetex Semiconductors plc
*
* The copyright in these models and the designs embodied belong
* to Zetex Semiconductors plc (" Zetex "). They are supplied
* free of charge by Zetex for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Zetex PLC, its distributors
* or agents.
*
* Zetex Semiconductors plc, Zetex Technology Park, Chadderton,
* Oldham, United Kingdom, OL9 9LL
*
*Zetex ZXMN3A02N8 Spice Model v2.0 Last Revised 22/2/05
*
*
.SUBCKT ZXMN3A02N8 30 40 50
*----connections----D-G-S
M1 6 2 7 7 Nmod L=1.16E-6 W=2.3
M2 7 2 7 6 Pmod L=1.3E-6 W=1.3
RG 4 2 3
RIN 2 5 1E12
RD 3 6 Rdmod 0.001
RS 7 5 Rdmod 0.018
RL 3 5 3E9
C1 2 5 8.5E-12
C2 3 2 3E-12
D1 5 3 Dbodymod
LD 3 30 1.3E-9
LG 4 40 1.2E-9
LS 5 50 1.2E-9
.MODEL Nmod NMOS (LEVEL=3 TOX=5.5E-8 NSUB=1E17 VTO=2
+KP=5E-5 NFS=2E11 KAPPA=0.1 UO=650 IS=1E-15 N=10)
.MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1.5E16
+TPG=-1 IS=1E-15 N=10)
.MODEL Dbodymod D (IS=4E-12 RS=.014 IKF=3.6 TRS1=1.5e-3
+CJO=1070e-12 BV=33)
*
*
*
*
or agents.
Zetex Semiconductors plc, Zetex Technology Park, Chadderton,
Oldham, United Kingdom, OL9 9LL
*
*ZETEX ZXMN3A03E6 Spice Model v2.0 Last revision 15/03/07
*
.SUBCKT ZXMN3A03E6 30 40 50
*------connections-------D-G-S
M1 6 20 5 5 Nmod
M2 5 20 5 6 Pmod
RG 4 2 1
RIN 2 5 1E12
RD 3 6 Rmod1 0.04
RL 3 5 1E8
C1 2 5 2E-11
C2 3 4 1E-12
D1 5 3 Dbodymod
Egt1 2 20 21 5 1.0
Vgt1 5 22 1.0
Igt1 5 21 1.0
Rgt 21 22 Rmod2 1.8
LD 3 30 0.3E-9
LG 4 40 1.9E-9
LS 5 50 1.9E-9
.MODEL Nmod NMOS (LEVEL=3 L=0.7E-6 W=0.77 TOX=60E-9 NSUB=2.58E16 UO=1022)
+VTO=1.2 KP=65E-6 GAMMA=1.61 PHI=0.74 RS=0.035 KAPPA=0.03 NFS=2.0E12 RD=0.03)
.MODEL Pmod PMOS (LEVEL=3 L=1.2E-6 W=1.0 TOX=64E-9 NSUB=2.58E16 UO=396)
.MODEL Dbodymod D (IS=1.5E-10 N=1.13 RS=0.06 IKF=0.3 XTI=0.1 TRS1=6E-3
+TIKF=6E-2 CJO=1E-12)
.MODEL Rmod1 RES (TC1=1E-5 TC2=1E-6)
.MODEL Rmod2 RES (TC1=4E-4 TC2=1E-6)
.ENDS ZXMN3A03E6
*
*$
*
*
(c) 2007 Zetex Semiconductors plc
*
* The copyright in these models and the designs embodied belong
* to Zetex Semiconductors plc (" Zetex "). They are supplied
* free of charge by Zetex for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Zetex PLC, its distributors
* or agents.
*
* Zetex Semiconductors plc, Zetex Technology Park, Chadderton,
* Oldham, United Kingdom, OL9 9LL
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=30/01/2009
*VERSION=3
*PIN_ORDER
Sn1, Gn1, Sn2, Gn2, Dn2, Dn2, Dn1, Dn1
*
.SUBCKT ZXMN3A04DN8 1 2 3 4 5 6 7 8
*Dev1 N-channel
M11 20 21 22 22 Nnmod1 L=0.7E-6 W=2.183
M12 22 21 22 20 Pnmod1 L=1.2E-6 W=2.183
RG1 26 27 1.1
RIN1 21 22 1E12
RD1 20 24 Rnmod1 0.01
RS1 22 23 1E-6
RL1 23 24 1E8
C11 21 22 11E-10
C12 20 21 1E-12
D1 23 24 Dnmod1
Egt1 26 21 30 22 1
Vgt1 22 31 1
Igt1 22 30 1
Rgt1 30 31 Rnmod2 2.3
LD1 24 25 1.5E-9
RP11 7 25 1E-6
RP12 8 25 1E-6
LG1 2 27 1.2E-9
LS1 1 23 1.2E-9
*Dev2 N-channel
M21 60 61 62 62 Nnmod1 L=0.7E-6 W=2.183
M22 62 61 62 60 Pnmod1 L=1.2E-6 W=2.183
RG2 66 67 1.1
RIN2 61 62 1E12
RD2 60 64 Rnmod1 0.01
RS2 62 63 1E-6
RL2 63 64 1E8
C21 61 62 11E-10
C22 60 61 1E-12
D2 63 64 Dnmod1
Egt2 66 61 70 62 1
Vgt2 62 71 1
Igt2 62 70 1
Rgt2 70 71 Rnmod2 2.3
LD2 64 65 1.5E-9
RP21 5 65 1E-6
RP22 6 65 1E-6
LG2 4 67 1.2E-9
LS2 3 63 1.2E-9
.MODEL Nnmod1 NMOS (LEVEL=3 TOX=64E-9 NSUB=3.07E16 UO=389 RS=0.02 XJ=1.6e-6)
.MODEL Pnmod1 PMOS (LEVEL=3 TOX=64E-9 NSUB=1.07E16 UO=429 TPG=-1)
.MODEL Dnmod1 D (IS=6E-10 N=1.2 RS=0.03 IKF=1 TIKF=2 TRS1=4E-4 XTI=0.1)
.MODEL Rnmod1 RES (TC1=10.7E-3 TC2=-4E-5)
.MODEL Rnmod2 RES (TC1=-2.6E-3 TC2=-5E-6)
.ENDS
*
*$
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=25/02/2009
*VERSION=1
*PIN_ORDER
D G S
*
.SUBCKT ZXMN3A04K 1 2 3
M11 20 21 22 22 Nnmod1 L=0.7E-6 W=2.183
D2 63 64 Dnmod1
LD2 64 65 1.5E-9
RP21 5 65 1E-6
RP22 6 65 1E-6
LG2 4 67 1.2E-9
LS2 3 63 1.2E-9
.MODEL Nnmod1 NMOS (LEVEL=3 TOX=7.5E-8 NSUB=8.5E16 VTO= 2.08
+KP=3.2E-5 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10)
.MODEL Pnmod1 PMOS (LEVEL=3 TOX=7.5E-8 NSUB=2E16
+TPG=-1 IS=1E-15 N=10)
.MODEL Dnmod1 D (IS=13E-12 RS=0.0207 IKF=0.2 TRS1=0.9e-3
+CJO=240e-12 BV=33 TT=16e-9)
.MODEL Rnmod1 RES (TC1=2.8e-3 TC2=5E-6)
.ENDS
*
*$
*
*ZETEX ZXMN3A14F Spice Model v1.0 Last revision 31/5/06
*
.SUBCKT ZXMN3A14F 30 40 50
*------connections-------D-G-S
M1 6 2 5 5 Nmod L=1.16E-6 W=0.76
M2 5 2 5 6 Pmod L=1.3E-6 W=0.35
RG 4 2 4.5
RIN 2 5 1E12
RD 3 6 Rmod 0.04
RS 5 55 Rmod 0.015
RL 3 5 3E9
C1 2 5 8.5E-12
C2 3 4 3E-12
D1 5 3 Dbodymod
LD 3 30 0.5E-9
LG 4 40 1.0E-9
LS 55 50 1.0E-9
.MODEL Nmod NMOS (LEVEL=3 TOX=5.5E-8 NSUB=5E16 VTO=2.13
+KP=2.5E-5 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10)
.MODEL Pmod PMOS (LEVEL=3 TOX=5.5E-8 NSUB=1.5E16
+TPG=-1 IS=1E-15 N=10)
.MODEL Dbodymod D (IS=6E-13 RS=.025 IKF=0.1 TRS1=1.5e-3
+CJO=150e-12 BV=33 TT=12e-9)
.MODEL Rmod RES (TC1=2.8e-3 TC2=0.8E-5)
.ENDS ZXMN3A14F
*
*$
*
*
(c) 2006 Zetex Semiconductors plc
*
* The copyright in these models and the designs embodied belong
* to Zetex Semiconductors plc (" Zetex "). They are supplied
* free of charge by Zetex for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Zetex PLC, its distributors
* or agents.
*
* Zetex Semiconductors plc, Zetex Technology Park, Chadderton,
* Oldham, United Kingdom, OL9 9LL
*
*ZETEX ZXMN3B04N8 Spice Model v2.0 Last Revised 15/3/07
*
.SUBCKT ZXMN3B04N8 30 40 50
*------connections-------D-G-S
M1 6 2 5 5 Nmod L=1.16E-6 W=2.9
M2 5 2 5 6 Pmod L=1.3E-6 W=1.6
RG 4 2 1
RIN 2 5 1E12
RD 3 6 Rdmod 0.01
RL 3 5 3E9
C1 2 5 8.5E-12
C2 3 4 3E-12
D1 5 3 Dbodymod
LD 3 30 1.3E-9
LG 4 40 1.2E-9
LS 5 50 1.2E-9
.MODEL Nmod NMOS (LEVEL=3 TOX=3.7E-8 NSUB=3E17 VTO=1.32
+KP=15E-5 RS=.008 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10)
.MODEL Pmod PMOS (LEVEL=3 TOX=5E-8 NSUB=1.5E16
+TPG=-1 IS=1E-15 N=10)
.MODEL Dbodymod D (IS=1E-11 RS=.01 IKF=.5 TRS1=3e-3
+CJO=85e-12 BV=33)
.MODEL Rdmod RES (TC1=5.2e-3 TC2=1E-5)
.ENDS ZXMN3B04N8
*
*$
*
*
(c) 2007 Zetex Semiconductors plc
*
* The copyright in these models and the designs embodied belong
* to Zetex Semiconductors plc (" Zetex "). They are supplied
* free of charge by Zetex for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Zetex PLC, its distributors
* or agents.
*
* Zetex Semiconductors plc, Zetex Technology Park, Chadderton,
* Oldham, United Kingdom, OL9 9LL
*
*ZETEX ZXMN3B14F Spice Model v1.0 Last revision 6/1/06
*
.SUBCKT ZXMN3B14F 30 40 50
*------connections-------D-G-S
M1 6 2 5 5 Nmod L=0.7E-6 W=1.3
M2 5 2 5 6 Pmod L=1.3E-6 W=0.34
RG 4 2 2.8
RIN 2 5 1E12
RD 3 6 Rdmod 0.03
RL 3 5 3E9
C1 2 5 8.5E-12
C2 3 4 3E-12
D1 5 3 Dbodymod
LD 3 30 0.5E-9
LG 4 40 1.0E-9
LS 5 50 1.0E-9
.MODEL Nmod NMOS (LEVEL=3 TOX=3.7E-8 NSUB=5E16 VTO=1.24
+KP=1.5E-5 RS=.01 NFS=2E11 KAPPA=0.06 UO=650 IS=1E-15 N=10)
.MODEL Pmod PMOS (LEVEL=3 TOX=3.7E-8 NSUB=2.58E16
+TPG=-1 IS=1E-15 N=10)
.MODEL Dbodymod D (IS=1E-11 RS=.025 IKF=.5 TRS1=3e-3 TT=1.2E-8
+CJO=200e-12 BV=33)
.MODEL Rdmod RES (TC1=4.9e-3 TC2=1E-5)
.ENDS ZXMN3B14F
*
*$
*
*
(c) 2006 Zetex Semiconductors plc
*
* The copyright in these models and the designs embodied belong
* to Zetex Semiconductors plc (" Zetex "). They are supplied
* free of charge by Zetex for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Zetex PLC, its distributors
* or agents.
*
* Zetex Semiconductors plc, Zetex Technology Park, Chadderton,
* Oldham, United Kingdom, OL9 9LL
*
*DIODES_INC_SPICE_MODEL
*ORIGIN=DZSL_DPG
*SIMULATOR=PSPICE
*DATE=02/11/2009
*VERSION=1
*PIN_ORDER
D G S
*
.SUBCKT ZXMN6A08K 30 40 50
M1 6 2 5 5 Nmod L=1E-6 W=0.6
M2 5 2 5 6 Pmod L=1E-6 W=0.45
RG 4 2 4
RIN 2 5 1E12
RD 3 6 Rmod1 0.075
RL 6 5 10E9
C1 2 5 100E-12
C2 3 4 5E-12
D1 5 3 Dbodymod
LD 3 30 1E-9
LG 4 40 2.3E-9
LS 5 50 2.3E-9
.MODEL Nmod NMOS (LEVEL=3 TOX=5E-8 NSUB=2E17 VTO=2.25
+KP=1.8E-5 RS=0.009 NFS=2E12 KAPPA=0.06 UO=650 IS=1E-15 N=10)
.MODEL Pmod PMOS (LEVEL=3 TOX=8E-8 NSUB=1E16
+TPG=-1 IS=1E-15 N=10)
.MODEL Dbodymod D (IS=2E-12 RS=0.025 IKF=0.06 TRS1=1.5e-3
+CJO=120e-12 BV=61)
.MODEL Rmod1 RES (TC1=6e-3 TC2=1.2E-5)
.ENDS ZXMN6A08K
*
*$
*SRC=2N7002;2N7002;MOSFETs N;Enh;60.0V 0.115A 7.50ohms Diodes Inc. -
S4 16 2 13 8
.MODEL SMOD1
.MODEL SMOD2
.MODEL SMOD3
.MODEL SMOD4
.MODEL Nmod1
.MODEL Nmod2
.MODEL Nmod3
.MODEL Jmod1
.MODEL Dmod1
V=52
.MODEL Dmod2
.MODEL Dmod3
.MODEL Rmod1
.MODEL Rmod2
.ENDS
*
*$
SMOD4
VSWITCH RON=.001 ROFF=100 VON=-0.5 VOFF=1
VSWITCH RON=.001 ROFF=100 VON=1 VOFF=-0.5
VSWITCH RON=.001 ROFF=100 VON=0 VOFF=-2
VSWITCH RON=.001 ROFF=100 VON=-2 VOFF=0
NMOS LEVEL=1 VTO=0.94 KP=4 LAMBDA=0.15 IS=1E-15 N=10
NMOS LEVEL=1 VTO=0.77 KP=.4 IS=1E-15 N=10
NMOS LEVEL=1 VTO=0.60 KP=.04 IS=1E-15 N=10
NJF VTO=-3.1 BETA=0.5 VTOTC=-0.006 LAMBDA=0.15
D IS=5.516E-13 RS=0.2084 N=1 CJO=18.5E-12 VJ=0.46 M=0.44 TT=20E-9 B
D CJO=33E-12 VJ=0.4 M=0.44 RS=0.1
D RS=1 BV=20
RES (TC1=-1.5e-3 TC2=-1E-6)
RES (TC1=8e-3 TC2=2E-5)
FET
.MODEL DI_DMN601DWK NMOS( LEVEL=1 VTO=2.50 KP=32.0m GAMMA=3.10
+ PHI=.75 LAMBDA=104u RD=0.280 RS=0.280
+ IS=150f PB=0.800 MJ=0.460 CBD=98.8p
+ CBS=119p CGSO=60.0n CGDO=50.0n CGBO=390n )
* -- Assumes default L=100U W=100U -*SRC=DMN601K;DI_DMN601K;MOSFETs N;Enh;60.0V 0.300A 2.00ohms Diodes Inc. MOSFET
.MODEL DI_DMN601K NMOS( LEVEL=1 VTO=2.50 KP=32.0m GAMMA=3.10
+ PHI=.75 LAMBDA=104u RD=0.280 RS=0.280
+ IS=150f PB=0.800 MJ=0.460 CBD=98.8p
+ CBS=119p CGSO=60.0n CGDO=50.0n CGBO=390n )
* -- Assumes default L=100U W=100U -*SRC=DMN601TK;DI_DMN601TK;MOSFETs N;Enh;60.0V 0.300A 2.00ohms Diodes Inc. MOSFE
T
.MODEL DI_DMN601TK NMOS( LEVEL=1 VTO=2.50 KP=32.0m GAMMA=3.10
+ PHI=.75 LAMBDA=104u RD=0.280 RS=0.280
+ IS=150f PB=0.800 MJ=0.460 CBD=98.8p
+ CBS=119p CGSO=60.0n CGDO=50.0n CGBO=390n )
* -- Assumes default L=100U W=100U -*SRC=DMN601VK;DI_DMN601VK;MOSFETs N;Enh;60.0V 0.300A 2.00ohms Diodes Inc. MOSFE
T
.MODEL DI_DMN601VK NMOS( LEVEL=1 VTO=2.50 KP=32.0m GAMMA=3.10
+ PHI=.75 LAMBDA=104u RD=0.280 RS=0.280
+ IS=150f PB=0.800 MJ=0.460 CBD=98.8p
+ CBS=119p CGSO=60.0n CGDO=50.0n CGBO=390n )
* -- Assumes default L=100U W=100U -*SRC=DMN601WK;DI_DMN601WK;MOSFETs N;Enh;60.0V 0.300A 2.00ohms Diodes Inc. MOSFE
T
.MODEL DI_DMN601WK NMOS( LEVEL=1 VTO=2.50 KP=32.0m GAMMA=3.10
+ PHI=.75 LAMBDA=104u RD=0.280 RS=0.280
+ IS=150f PB=0.800 MJ=0.460 CBD=98.8p
+ CBS=119p CGSO=60.0n CGDO=50.0n CGBO=390n )
* -- Assumes default L=100U W=100U -*SRC=DMN66D0LDW;DI_DMN66D0LDW;MOSFETs N;Enh;60.0V 0.115A 5.00ohms Diodes Inc MO
SFET
.MODEL DI_DMN66D0LDW NMOS( LEVEL=1 VTO=2.00 KP=55.7m GAMMA=2.48
+ PHI=.75 LAMBDA=69.6u RD=0.700 RS=0.700
+ IS=57.5f PB=0.800 MJ=0.460 CBD=9.88p
+ CBS=11.9p CGSO=16.8n CGDO=14.0n CGBO=199n )
* -- Assumes default L=100U W=100U -*SRC=DMN66D0LW;DI_DMN66D0LW;MOSFETs N;Enh;60.0V 0.115A 5.00ohms Diodes Inc MOSF
ET
.MODEL DI_DMN66D0LW NMOS( LEVEL=1 VTO=2.00 KP=55.7m GAMMA=2.48
+ PHI=.75 LAMBDA=69.6u RD=0.700 RS=0.700
+ IS=57.5f PB=0.800 MJ=0.460 CBD=9.88p
+ CBS=11.9p CGSO=16.8n CGDO=14.0n CGBO=199n )
* -- Assumes default L=100U W=100U -*SRC=MMBF170;DI_MMBF170;MOSFETs N;Enh;60.0V 0.500A 2.10ohms Diodes Inc. MOSFET
.MODEL DI_MMBF170 NMOS( LEVEL=1 VTO=2.10 KP=18.8m GAMMA=2.60
+ PHI=.75 LAMBDA=1.04m RD=0.294 RS=0.294
+ IS=250f PB=0.800 MJ=0.460 CBD=29.8p
+ CBS=35.8p CGSO=24.0n CGDO=20.0n CGBO=176n )
* -- Assumes default L=100U W=100U --
*
*Zetex ZVN2106A Spice Model v2.0 Last Revised 30/6/08
*
.SUBCKT ZVN2106A 3 4 5
*------connections-------D-G-S
M1 6 2 8 8 N2106AM
M2 6 2 8 8 N2106AMS
RG 4 2 15
RD 3 6 0.25
RS 8 5 0.94
RL 3 5 100E6
D1 5 3 N2106AD
Egs2 13 8 2 8 1
Eds1 14 8 6 8 1
C1 2 8 72E-12
C2 2 3 20E-12
C3 15 14 70E-12
C4 16 8 83E-12
S1 2 15 14 13 SMOD1
S2 13 15 14 13 SMOD2
S3 16 13 13 8 SMOD3
S4 16 2 13 8 SMOD4
.MODEL SMOD1 VSWITCH RON=.001 ROFF=100 VON=1.5 VOFF=2.5
.MODEL SMOD2 VSWITCH RON=.001 ROFF=100 VON=2.5 VOFF=1.5
.MODEL SMOD3 VSWITCH RON=.001 ROFF=100 VON=-4.5 VOFF=-5.5
.MODEL SMOD4 VSWITCH RON=.001 ROFF=100 VON=-5.5 VOFF=-4.5
.MODEL N2106AM NMOS VTO=1.6 IS=1E-15 KP=0.67 CBD=50E-12 PB=1
.MODEL N2106AMS NMOS VTO=.98 IS=1E-15 KP=0.006 PB=1
.MODEL N2106AD D IS=5.516E-13 RS=.2084 N=1.0078
.ENDS ZVN2106A
*
*$
*
*
(c) 2008 Diodes Incorporated
*
* The copyright in these models and the designs embodied belong
* to Diodes Incorporated (" Diodes "). They are supplied
* free of charge by Diodes for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liability
* in respect of any use is accepted by Diodes Incorporated, its distributors
* or agents.
*
* Diodes Incorporated, 1566 N. Dallas Parkway, Suite 850, Dallas, TX 75248, US
A
*
*Zetex ZVN2106G Spice Model v2.0 Last Revised 30/6/08
*
.SUBCKT ZVN2106G 3 4 5
*------connections-------D-G-S
M1 6 2 8 8 N2106AM
M2 6 2 8 8 N2106AMS
RG 4 2 15
RD 3 6 0.25
RS 8 5 0.94
RL 3 5 100E6
D1 5 3 N2106AD
Egs2 13 8 2 8 1
Eds1 14 8 6 8 1
C1 2 8 72E-12
C2 2 3 20E-12
C3 15 14 70E-12
C4 16 8 83E-12
S1 2 15 14 13 SMOD1
S2 13 15 14 13 SMOD2
S3 16 13 13 8 SMOD3
S4 16 2 13 8 SMOD4
.MODEL SMOD1 VSWITCH RON=.001 ROFF=100 VON=1.5 VOFF=2.5
.MODEL SMOD2 VSWITCH RON=.001 ROFF=100 VON=2.5 VOFF=1.5
.MODEL SMOD3 VSWITCH RON=.001 ROFF=100 VON=-4.5 VOFF=-5.5
.MODEL SMOD4 VSWITCH RON=.001 ROFF=100 VON=-5.5 VOFF=-4.5
.MODEL N2106AM NMOS VTO=1.6 IS=1E-15 KP=0.67 CBD=50E-12 PB=1
.MODEL N2106AMS NMOS VTO=.98 IS=1E-15 KP=0.006 PB=1
.MODEL N2106AD D IS=5.516E-13 RS=.2084 N=1.0078
.ENDS ZVN2106G
*
*$
*
*
(c) 2008 Diodes Incorporated
*
* The copyright in these models and the designs embodied belong
* to Diodes Incorporated (" Diodes "). They are supplied
* free of charge by Diodes for the purpose of research and design
* and may be used or copied intact (including this notice) for
* that purpose only. All other rights are reserved. The models
* are believed accurate but no condition or warranty as to their
* merchantability or fitness for purpose is given and no liabili