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Biasing

DC Biasing of BJTs

Biasing refers to the DC voltages

applied to the transistor to turn it on
so that it can amplify the AC signal.

Operating Point

Biasing and the Three States of Operation

Active or Linear Region Operation

Base Emitter junction is forward biased
Base Collector junction is reverse biased
Cutoff Region Operation
Base Emitter junction is reverse biased
Base Collector junction is reverse biased
Saturation Region Operation
Base Emitter junction is forward biased
Base Collector junction is forward biased
The DC input establishes an operating or quiescent point called the Q point.

BJT DC Analysis
1.

Draw the DC equivalent circuit

a.
b.
c.

2.

Write KVL for the loop which contains B-E junction

a.
b.

3.

Capacitors are open circuit (f = 0, XC = )

Inductors are short circuit (f = 0, XL = 0) or replaced by
their DC resistance (winding resistance) if given.
Kill the AC power sources (short AC voltage sources and
remove AC current sources)

Take VBE = VBE(ON) to ensure the transistor is on (or not in

the cut-off (OFF) state)
Determine the base current IBQ (or emitter current IEQ)

Write KVL for the loop which contains C-E terminals

a.
b.
c.

DC Biasing Circuits

a. Fixed-Bias Circuit
b. Emitter-Stabilized Bias Circuit
c. Voltage Divider Bias Circuit
d. DC Bias with Voltage Feedback

Assume the transistor is in the forward active (FA) state and

take ICQ= IBQ (or ICQ= IEQ)
Calculate VCEQ
If VCEQ VCE(SAT) then the transistor is in the saturation
(SAT) state (i.e., ICQ IBQ ), so take
VCEQ = VCE(SAT) and calculate ICQ (this is the saturation
current IC(SAT)).

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a. Fixed-Bias Circuit

Base-Emitter Loop

Using Kirchoffs voltage law:

VCC IBRB VBE = 0

Solving for IB:

Collector-Emitter Loop

Example

Knowing:
Using Kirchoffs voltage law:
Because:

IBQ , ICQ=?

Since VE = 0V, then:

IBQ = 47.08 A

And knowing:

VCEQ = ?

VB , VC = ?

And VE = 0V, then:

VCEQ = 6.83 V

VB = 0.7 V

ICQ= 2.35 mA
VBC = ?
VC = 6.83 V

VBC = -6.13 V

Example
Transistor Saturation Level
When the transistor is operating in the Saturation Region
it is conducting at maximum current flow through the transistor.

IBQ = 47.08 A

ICQ= 2.35 mA

VCEQ = 6.83 V
VB = 0.7 V

VC = 6.83 V

VBC = -6.13 V

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Load Line Analysis

Load Line Analysis

VCE = VCC - RC IC

The end points of the line are: IC(sat) and VCE(cutoff)

IC(sat):

VCE(cutoff):

Q-point is the particular operating point:

Value of RB
Sets the value of IBQ
Where IBQ and Load Line intersect
Sets the values of VCEQ and ICQ.

Circuit values effect Q-point

Circuit values effect Q-point (continued)

Example

Circuit values effect Q-point (continued)

VCC , RC , RB = ?

VCC = 20 V

RC = 2 k

RB = 772 k

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b. Emitter-Stabilized Bias Circuit

Base-Emitter Loop

Applying Kirchoffs voltage law:

Knowing:
Combining these two formulas:
Adding a resistor to the emitter circuit stabilizes the bias circuit.

Grouping terms and solving for IB:

Collector-Emitter Loop

Load Line Analysis

Applying Kirchoffs voltage law:

Knowing that IE IC and solving for VCE:
Finding VE:

The load line end points can be calculated:

Finding VC:
or

VCE(cutoff) :

IC(sat) :

Finding VB:
or

c. Voltage Divider Bias

Example:

IBQ , ICQ=?

IBQ = 40.01 A

VCEQ = ?

VCEQ = 13.97 V

VC , VE = ?

VC = 15.98 V

VB , VBC = ?

VB = 2.71

ICsat =?

ICQ= 2.01 mA

VE = 2.01 V
VBC = -13.27 V

This is a very stable bias circuit.

The currents and voltages are almost independent of variations in .

ICsat = 6.67 mA

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Exact Analysis
Example:

RB = 3.55 k
VBB = 2 V
IBQ , ICQ=?

IBQ = 6.05 A

VCEQ = ?

VCEQ = 12.22 V

ICQ= 0.85 mA

Approximate Analysis
Example:
For Voltage Divider bias circuits in which:
IB << I1 and I2 and I1 I2 then the following approximations will do.

if
then

and

Applying Kirchoffs voltage law:

IE IC then

Load Line Analysis

ICQ=?

ICQ= 0.867 mA

VCEQ = ?

VCEQ = 12.03 V

ICsat = ?

ICsat = 1.91 mA

d. DC Bias with Voltage Feedback

The load line end points can be calculated:

VCEcutoff :

ICsat :

Another way to improve the stability of a bias circuit is to add a feedback path from
collector to base. In this bias circuit the Q-point is only slightly dependent on the transistor
Beta .

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Base Emitter Loop

Collector Emitter Loop

Applying Kirchoffs voltage law:

Note:

IC = IC + IB

VCC ICRC IBRB VBE IERE = 0

-- but usually IB << IC

Knowing IC = IB and IE IC then:

-- so IC IC

VCC IB RC IBRB VBE IBRE = 0

Applying Kirchoffs voltage law:

IE + VCE + ICRC VCC = 0

Since IC IC and IC = IB:

IC(RC + RE) + VCE VCC =0

Solving for VCE:

VCE = VCC IC(RC + RE)

Simplifying and solving for IB:

Various Different Bias Circuits

Troubleshooting Techniques
A few rules of thumb:

VBE 0.7V for silicon transistors

VCE 25% to 75% of VCC

PNP Transistors
The analysis for PNP bias transistor circuits is the same as that for NPN transistor circuits.
The only difference is that the currents are flowing in the opposite direction.

Example: Determine the IEQ and VCEQ for the figure above?
IEQ = 4.16 mA

Bias Stabilization
Variation of BJT (Si) Parametes with Temperature
T (C)

ICO (nA)

-65

0.2 x 10-3

20

0.85

25

0.1

50

0.65

100

20

80

0.48

175

3.3 x 103

120

0.3

ICO

VBE

VCEQ = 11.68 V

Shift in dc bias point (Q-point) due to change in temperature

for the fixed-bias circuit

VBE (V)

ICO (reverse saturation current)

doubles in value for every 10 C

increases with temperature

VBE (base-emitter junction forward bias potential)
decreases about 7.5mV per 1 C increase in temperature

a) at 25C

b) at 100C

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Stability factors (Voltage-divider bias circuit)

Stability factors
Stability of the collector current IC depends on the stability of several parameters like

ICO, , VBE, VCC, RB, RC etc.

Stability factors (Simplification)

Stability factors (Voltage-divider bias circuit) (continued)

Variation of stability factor S (ICO) with the resistor ration RB/RE for the emitter-bias configuration

Example

Stability factors (Voltage-feedback bias circuit)

T (C)

ICO (nA)

VBE (V)

-65

0.2 x 10-3

20

0.85

25

0.1

50

0.65

100

20

80

0.48

175

3.3 x 103

120

0.3

Find and compare the collector current change IC for a fixed-bias circuit and voltagedivider bias circuit when the temperature rises from 25C to 100C where RB = 240k,
IC1= 2mA and RTh / RE = 2, RE = 4.7k. Use the table above.

ICO = 19.9 nA

= 30

VBE = -0.17 V

For fixed-bias circuit

= 51

= 0.04 mA

= -0.21 m-1

IC = 1.236 mA
For voltage-divider bias circuit

=3

= 1.5 A

= -0.2 m-1

IC = 80 A

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Stability of Transistor Circuits with Active Components

VBE compensation
by using a reverse-biased diode at the emitter

VBE compensation
by using a reverse-biased diode at the emitter

ICO compensation
by replacing R2 with a reverse-biased diode
IC compensation (without RE)
by using a current mirror

ICO compensation (esp. for Ge transistors)

by replacing R2 with a reverse-biased diode

IC compensation (without RE)

by using a current mirror

Relay Driver
Practical Applications
Relay Driver
Transistor Switch
Logic Gates
Current Mirror
Voltage Level Indicator

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Transistor Switch

Transistor Switching Networks

Transistors with only the DC source applied can be used as electronic switches.

Switching Circuit Calculations

Switching Circuit Calculations

The transistor will switch between saturation and cutoff regions.

You must ensure that:

Also consider the resistance across the transistor at saturation:

The resistance across the transistor in cutoff is theoretically infinite, but it is calculated:

Switching Time

Logic Gates

Another consideration is the time it takes the transistor to switch.

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Current Mirror

Voltage Level Indicator

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