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MP4004
NANYANG TECHNOLOGICAL UNIVERSITY
SEMESTER 1 EXAMINATION 2007-2008
MP4004 Advanced Manufacturing and Nanotechnology

Time Allowed : 21/2 hours

November 2007
INSTRUCTIONS
1.

This paper contains FIVE (5) questions and comprises SIX (6) pages.

2.

Answer ALL questions.

3.

All questions carry equal marks.

1(a)

(i)

Briefly explain the purpose of depth of focus in projection printing lithography.

(2 marks)

(ii)

A projection lithography system with a numerical aperture (NA) of 0.7 is

adaptable to a variety of light sources ranging from deep ultraviolet and visible
light. Calculate and plot exposure wavelengths between 100 nm and 1000 nm
versus the theoretical resolution and depth of focus. Assume k1 = 0.6 and
k2 = 0.5 (which are the factors used in the expressions for resolution and depth
of focus, respectively).
(4 marks)

(iii) Various exposure wavelengths as shown in Table 1 can be used for the
conventional projection lithography system.
Table 1 Exposure source
Exposure source

g-line

i-line

KrF

ArF

Wavelength (nm)

436

365

248

193

Will an ArF source be adequate for the 0.13 m technology generation

according to your plot? Justify your answer for its suitability. Otherwise
suggest a suitable resolution enhancement technique to realise the 0.13 m
technology.
(4 marks)
(b)

Provide a sketch of an etch profile if the degree of anisotropy of an etching process is

0.45. The etching process consists of a combination of physical and chemical
components. Determine the percentage of the etch rate in the vertical direction that is
due to the chemical component. State all assumptions made.
(5 marks)

Note: Question No. 1 continues on Page 2.

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MP4004
(c)

Range and Strangle are roughly proportional to ion energy over a wide range of
energy as shown in Figure 1. A silicon device requires an implant of boron with a
peak at a depth of 0.3 m and a peak concentration of 1017 cm-3. Determine the
implant energy and the dose that should be used for the process. Note that:
Q = 2 N p R p

where the symbols carry the usual meanings.

2
1

PROJECTED AND TRANSVERSE STRAGGLE (m)

(5 marks)

Rp IN Si
Rp IN SiO2

PROJECTED RANGE (m)

B
P

0.1

As

0.01

0.2
0.1

B
P
As
0.01

0.001
10
0.003
10

100 ENERGY (keV)

1000

Figure 1 Ion implantation

Si
Rp
R

100

ENERGY (keV)

1000

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MP4004
2(a)

Laser beam characteristics have significant influence on machining processes, and

they are as follows:
Wavelength
Spatial mode
Temporal mode
Optical focal length
Provide a match of the appropriate characteristic that has the most influence on each
of the issue in the following:
(i)
(ii)
(iii)
(iv)

Minimise taper on a groove or hole with a higher aspect.

Minimise recast layer and heat affected zone in machined features.
Maximise absorption in a specific work material.
High quality for precision machining
(4 marks)

(b)

A pulsed Nd:YAG laser is used to drill 0.5 mm diameter holes in a nickel plate of
1 mm thick. The laser is capable of generating 5 kW peak power output. The
material properties are as follows:
Density
Latent heat of vaporisation
Specific heat
Vaporisation temperature

8960 kg/m3
6.47x106 J/kg
444 J/kg K
3110 K

Assume that all the beam energy is absorbed in the work material, estimate the pulse
duration required.
(6 marks)
(c)

A transistor-based pulse generator in a EDM system is used to conduct an experiment

using the machining parameters as follows:
Open voltage
Discharge voltage
Discharge current
Discharge duration
Ignition delay
Pulse interval

100V
20 V
5A
100 s
1 s
5 s

(i)

Sketch a pulse train of the voltage and current waveforms, indicating clearly the
machining parameters.
(4 marks)

(ii)

Determine the pulse energy. Describe the distribution of the pulse energy
dissipated at the spark gap in a typical die sinking EDM process.
(4 marks)

(iii) Determine the duty cycle.

(2 marks)

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MP4004
3(a)

Illustrate the important difference between measurement error and measurement

uncertainty.
(4 marks)

(b)

A gauge block is calibrated using a mechanical dial comparator. Initially the

comparator is set with a measurement standard and hence the differences in each test
are recorded for Type A evaluation. Each test is repeated five times and the results
are:
(215; 212; 211; 213; 213) nm
Finally, the estimation of Type B evaluation takes into account of the maximum and
minimum of the measured values. A rectangular distribution is assumed. (Note that
standard uncertainty, u, for a rectangular distribution is: u = a/3 where a = the halfwidth between the upper and lower limits). Other Type B values are ignored.
Determine the combined standard uncertainty for the gauge block.
(6 marks)

(c)

For the simple triangular surface roughness profile shown in Figure 2, determine the
average surface roughness. Assume that the cut-off length = 4b.
b

2a

b
Figure 2 Surface profile
(4 marks)
(d)

Your company has purchased a CNC co-ordinate measuring machine that has a range
of X = 700 mm, Y = 700 mm and Z = 600 mm, and a resolution of 0.0001 mm on each
axis. The manufacturer of the measuring machine claims that it has an accuracy
based on the ISO standard of maximum permissible error, MPE, given as:

MPE = 1.2 + 3L/1000 m where L is in mm

Explain what you understand by the above measurement performance characteristics.
Provide an estimate of the maximum error, for measurement of a small object and
large object.
(6 marks)

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MP4004
4(a)

Name three significant effects of material structure at the nanometre scale and provide
a brief discussion for each of them.
(4 marks)

(b)

Figure 3 shows 12 nearest neighbours (open circles) of an atom (solid circle) in a

face-centred cubic (FCC) lattice. These 13 atoms constitute the smallest theoretical
nanoparticle for the FCC lattice. The 12 neighbouring atoms can form a polyhedron
called a dekatessarahedron that is generated by connecting the atoms to form a
number of square planar faces and equilateral triangular planar faces.
(i)

Sketch schematically how a square planar face and an equilateral triangular

planar face are formed.
(2 marks)

(ii)

How many square planar faces and equilateral triangular planar faces can the
polyhedron have?
(2 marks)

Figure 3

(c)

Schematic of an atom (solid circle) with its 12 nearest neighbouring

atoms (open circles) in an FCC lattice

In a photocatalysis reaction on a semiconductor nanoparticle using UV light, a certain

level of light energy is required to stimulate the reaction. It was observed from the
reaction process that the UV light with a wavelength of = 450 nm is necessary for
the effective radiation. Calculate the activation energy produced by the UV light.
The following constants may be useful: h = 6.63 x 10-34 J-s (Planck's constant),
c = 3 x 108 m/s (speed of light), and l eV = 1.6 x 10-19 J.
(3 marks)

(d)

Complete the following table for three types of hybrid orbitals:

Type of spn hybridisation

Digonal sp
Trigonal sp2
Tetrahedral sp3

Orbitals used for bond

Bond angle ()

(6 marks)
(e)

Solid carbon has three main structures called allotropic forms: diamond, graphite and
fullerene (C60). What are their typical chemical bonding structures?
(3 marks)

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MP4004
5(a)

There are three typical structures of single-wall carbon nanotubes (SWCNTs) as

shown schematically in Figure 4. Name each of the three structures.
(2 marks)

Figure 4 Schematic of three typical structures of SWCNTs

(b)

Name three potential applications of carbon nanotubes.

(2 marks)

(c)

Quantum well, quantum wire and quantum dot are some important nanostructures that
can be formed by nanolithography.
(i) Briefly describe the typical characteristics of these three nanostrucutures.
(3 marks)
(ii) Schematically illustrate the typical steps in forming a quantum dot (or wire) by
nanolithography.
(7 marks)

(d)

Describe the basic working principle, typical operation modes, and metrological
applications of scanning tunnelling microscopy (STM).
(6 marks)

End of Paper