1.

7 (B) BASIC ELECTRONICS (908)

Teaching Scheme Examination Scheme

Theory Practical Theory
Practical Oral Term-work Sessional
Hrs per Hrs per Marks/ paper
marks marks marks marks
week week duration
2 2 100/3HRS -- -- 50 50

Subject Objective
This subject is classified under engineering science group & intends to
teach the students facts, concepts, principle & procedures of basic electronics
devices & circuits and their application in electronics systems. The knowledge is
essential for the study of the core technology subjects like Applied electronics,
Digital techniques & applications, Linear integrated circuits which in turn will
develop investigation, design and testing skills in students.

Detailed Content
PRACTIC
THEORY CONTENTS
ALS
Unit I
Chapter 1 Introduction to Basic Electronics Marks Period 1) Identi
00 01 ficati
1.1 Definition of Electronics on of
Basic
1.2 Application of Electronics Electr
1.3 Basic Electronic components onic
comp
1.4 Symbols & unit onent
s
Chapter 2 Semiconductor Theory Marks Period 2) Study
08 04 of
2.1 Atomic theory differ
ent
- Structure of atom electr
2.2 Band theory onics
instru
2.3 Classification of material based on band theory ment
2.4 Conductors, insulators ,& semiconductor s&
devic
& their comparison es.
2.5 Semiconductor material 3) V-I
chara
2.5.1 Intrinsic & extrinsic semiconductor cteris
2.5.2 Trivalent & pentavalent impurities tics
of P-
2.5.3 P type & N type semiconductor N
Junct
ion
diode
.

Unit II
Chapter 3 Rectifier Circuits Marks Period 4) Study
10 08 of
3.1 P-N Junction Diode Half
wave
3.1.1 P-N junction with forward & reversed bias rectifi
3 .1.2 V-I Characteristic of p-n junction diode er
5) Study
3 1.3 operating principle, applications of diode of
3.1. 4 Static & dynamic resistance Full
wave
rectifi
er
3.2 Other types of diodes symbol, principle of operation and characteristic
of Photo diode, Varactor diode , Tunnel diode ,Point contact diode
3.3 Diode as Rectifier
3 .3.1 Definition of rectifier circuit
3 .3.2 Rectifier circuits –HW, FW center tapped and FW bridge type
3 .3.3 Ripple factor PIV, comparison, merits and demerits of different
rectifier circuits
Chapter 4 Filter circuits Marks Period
10 06 6) Study
of
4.1 Circuit parameters resistor ,inductor ,capacitor rectifi
4 .2 Necessity of filter circuits ers
with
4 .3 Type of filter circuits capa
 Series inductor type citor
filter.
 Shunt capacitor type
 L-C filter
 filter
4 .4 Comparison ,merits & demerits of different filter
4 .5 Nature of o/p waveform of different filters
4.6 Voltage multipliers
4.6.1 Voltage doubler trippler & quadrupler circuits using P-N junction diode.

Marks Period
8 02 7) V-I
Chapter 5 Zener diode and its application. chara
cteris
5.1 Principle of operation of zener diode tics
5.2 VI characteristics of zener diode of
zener
5.3 Zener diode as voltage regulator 8) Diod
Unit III Marks Period e&
12 06 Zene
Chapter 6 Bipolar Junction Transistor r
6.1 Introduction Diod
6.2 Construction ,symbol ,operating principle of PNP & NPN transistors e as
a
6.3 Transistor configurations - CC, CB, CE volta
6.4 Transistor characteristics in different configurations ge
regul
6.5 Comparison of 3 configuration ator.
6.6 Transistor as an amplifier, commonly used transistor configuration
 Marks Period
10 10
10) JFET
Chapter 7 Field Effect Transistor Characteri
stics
7.1 Construction, symbol & working principle &
types of JFET
7.2 Characteristics of JFET
7.3 FET Parameters / terms
7.3.1 Dynamic drain resistance
7.3.2 Mutual conductance or transconductance
7.3.3 Pinch off voltage
7.3.4 amplification factor
7.4 Caparison, merits & demerits of JFET with BJT
7.5 Metal Oxide Semiconductor FET
7.5.1 Construction, symbol of MOSFET
7.5.2 Working principle of MOSFET
Marks Period 11) Study
16 10 of
Transi
Chapter 8 Transistor Biasing & Stabilization stor
8.1 Introduction Biasin
g
8.2 Transistor biasing Circuit
s.
8.3 Faithful amplification
8.4 Transistor operating points , selection of operating point
8.5 Variation of transistor parameters.
8.6 Stabilization operating point
8.6.1 Need for stabilization
8.6.2 Thermal runaway
8.6.3 Stability factor
8.7. Requirement of transistor biasing
8.8. Methods of transistor biasing
8.8.1 Base resisters method or fixed bias circuits
Biasing with feed back resister or
collector to base bias ckt
8.8.2 Negative feedback & its effect on stabilization
8.8.3 Voltage divider bias method
 8.8.4 Transistor Hybrid Parameters
Four parameter system, meaning of h parameters
for CB, CE & CC configuration.
Marks Period
16 10 12) Study
of
Chapter 9 Transistor Amplifiers single
9.1 Introduction stage
C-E
9 .2 Classification of amplifiers amplifi
er.
9.3 Single stage transistors amplifiers 13) Frequ
ency
9.4 Graphical explanation of transistors amplifiers respo
nse of
two
stage
R-C
couple
d C.
E.
amplifi
er.

9.5 Practical ckt of transistors amplifiers

9.6 D-C & A-C equivalents ckts of transistors amplifiers
9.7 Load line analyses
9.8 Multistage transistors amplifiers
9 .8.1 Amplifiers coupling
9 .8.2 R-C coupled Transformer coupled & Direct coupled
Amplifiers
9.8.3 Comparison of different type of coupling
9.9 Frequency Response of multiple amplifiers
9.10 Gain ,Bandwidth ,Merits & Demerits of deferent coupling
Marks Period
10 8
Chapter 10 Transistor AF Power amplifiers 14) Study
of
10.1 Transistors AF power amplifiers Compl
iment
10.2 Difference between voltage & power amplifiers ary
10.3 Classification of power amplifiers Symm
etry
10.4 Properties of class A,B,AB and C amplifiers ,comparison & their push
pull
applications amplifi
er.
10.4 Single ended, push-pull and complementary symmetry amplifiers
 circuits
10.5 Thermal runaway and heat sinks

Reference:
Sr.
No.
Author Title Publisher
a) Bhargav A.
Basic Electronics & Linear
1. Gupta TTTI, Chandigarth
Circuits
b) Kulshreshtha
2. Allen Mottorshed Electronic Devices and Circuts Tata Mc gra Hill

3. Malvino Electronic Principals Tata Mc Gra Hill

4. V. K. mehta Principals of Electronics S. Chand

5. Sedha Applied Electronics S. Chand