Determination of Bipolar Junction Transistor (BJT)

Output characteristic (VCE Vs IC) curve for C-E configuration

And observing it as Controlled Switch
OBJECTIVE
The purpose of this experiment is to
Measure and calculate the beta and alpha of a BJT.
Study data sheet of BJT
COMPONENTS REQUIRED
Transistor 2N3904 (NPN)
Resistors 100K, 1K
PRELAB
Refer to the specifications for the 2N3904 and find the following information:
a. transistor type
b. maximum power it can dissipate at 250C
c. maximum collector current rating
d. maximum collector to emitter voltage rating
e. operating temperature range
f. minimum and maximum hFE ()
g. the emitter to base breakdown voltage
SUMMARY OF THEORY
A Bipolar junction transistor (BJT) is a three terminal device capable of amplifying an ac
signal. The three terminals are called base (B), emitter (E), collector(C), and come in two flavors
NPN and PNP. The middle letter indicates the type of material used for the base, while outer
letters indicate the emitter and collector material.
BJTs are current amplifiers. They are used as switch as well. A small base current
controls a larger current in the collector-emitter circuit. Consider the NPN transistor connected in
Common-Emitter configuration shown in figure (a). If the base is at higher ( 0.7 volt) potential
than the emitter then a current iB will flow into the base. The current into the collector is times
larger than the base current.
is a ratio of collector current to base current and it specify the current gain for a
transistor.
(Beta) = Collector current (IC) / Base Current (IB)
The quantity (usually called hFE in transistor data sheets) is a characteristic of the
individual transistor and is typically in the range from 100-500 for the types of transistors we
will be using. The transistor can be thought of as a current amplifier device -- the current at the

output (collector or emitter) is times larger than the current at the input (base). Another useful
characteristic is the dc alpha () which is a ratio of collector current to emitter current.
For a transistor to amplify, power is required from dc sources. The dc voltages required
for proper operation are referred to as bias voltages. The purpose of bias is to establish and
maintain the required operating conditions despite variations between transistors or changes in
the circuit parameters. For normal operation, the base emitter junction is forward-biased and
base-collector junction reverse-biased. Since the base emitter junction is forward-biased, it has
characteristics of a forward-biased diode.
OUTPUT (VCE VS IC) CHARACTERISTIC CURVE FOR C-E CONFIGURATION:

Connect the given NPN transistor (2N3904) in the common emitter configuration as
shown in figure (a).

Figure (a)

Find the values of Collector current (IC) and Collector-to-Emitter voltages (VCE) for
different values of Base current (IB) and Vcc.

By applying KVL we find the following formula to set the value of IB.
VBB = IB * RB + VBE
VBB = IB * RB + 0.7
IB = (VBB - 0.7)/ RB

Fix the value of RB resistance to 100 K and vary VBB to get different values of IB.
Note down the value of (also written as hfe value) from the datasheet of 2N3904 NPN
transistor.
Find collector current for each value of base current using formula (IC = * IB ).

IC = * IB =

IB = 0.02mA OR 20A
VBB=

Vary Vcc from 0V to 9v from power supply to get following values of VCE
VCC

1V

2V

3V

4V

5V

6V

7V

8V

9V

8V

9V

8V

9V

VCE
IC
IC = * IB =

IB = 0.04mA OR 40A
VBB=

Vary Vcc from 0V to 9v from power supply to get following values of VCE
VCC

1V

2V

3V

4V

5V

6V

7V

VCE
IC

IC = * IB =

IB = 0.06mA OR 60A
VBB=

Vary Vcc from 0V to 9v from power supply to get following values of VCE
VCC

VCE
IC

1V

2V

3V

4V

5V

6V

7V

IC = * I =

IB = 0.08mA OR 80A
VBB=

Vary Vcc from 0V to 30v from power supply to get following values of VCE
VCC

1V

2V

3V

4V

5V

6V

7V

8V

9V

VCE
IC

After completing first table, draw the points on paper to get graph. It can be seen that for
a fixed value of IB we get a value of collector current IC which is times amplified of
Base current ( IB) i.e IC = * IB.
It can also be seen that when VCC=0 no collector current flows. As we start increasing
VCC voltage, the collector current starts to increase and reach its determined value when
C-B junction is properly reverse biased. Further increase in VCC will not make a
significant increase in collector current (IC).
From table values we also conclude that its base current (IB) that controls the collector
current (IC). And VCC has very minute affect in changing collector current (IC). This
behavior is called switching behavior of BJT.
Complete the graph for all tables values.

IC (mA)

VCE (V)