Igbt& Mosfet

IGBT & MOSFET CHARACTERISTICS
STUDY TRAINER
(Model No: VPET-202A)
User Manual
Version 1.0
Technical Clarification /Suggestion :

/
Technical Support Division,
Vi Microsystems Pvt. Ltd.,
Plot No :75, Electronics Estate,
Perungudi, Chennai - 600 096, INDIA.
Ph: 91- 44-2496 1842, 91-44-2496 1852
Mail : rnd@vimicrosystems.com
Web : www.vimicrosystem.com
01 - 13 - 03 - 31
CONTENTS
Chapter - 1
Chapter - 2
Chapter - 3
Chapter - 4
INTRODUCTION
1.1
Introduction
ABOUT OUT TRAINER
2.1
2.2
2.3
2.4
2.5
4
4
5
6
7
Pictorial View
Specification
Front Panel View
Front Panel Description
Protection & Precaution
THEORETICAL CONCEPT
3.1
3.2
9
11
Power MOSFET
Insulated Gate Bipolar Transistor (IGBT)
EXPERIMENTAL SECTION
13
Exp-1
Exp-2
Exp-3
Exp-4
14
17
20
23
OUTPUT CHARACTERISTICS OF IGBT

TRANSFER CHARACTERISTICS OF IGBT
OUTPUT CHARACTERISTICS OF MOSFET
TRANSFER CHARACTERISTICS OF MOSFET
IGBT & MOSFET CHARACTERISTICS STUDY TRAINER
VPET 202A
Chapter - 1
Introduction
[1]
VPET 202A
1. INTRODUCTION
Power electronics deals with the applications of solid-state electronics for the control and
conversion of electrical power. Conversion techniques require the switching ON and OFF of
power semiconductor device.
Power switching devices such as power BJTs, power SCRs, GTOs and other semiconductor
devices find increasing applications in a wide range of products. The applications of modern
microprocessors in synthesizing the control strategy for gating power devices to meet the
conversion specifications are widening the scope of power electronics.
Power Electronics are employed in various fields that include rocket propulsion systems,
motor control, Electric vehicles, air-conditioners, High Voltage Direct Current (HVDC)
transmission systems.
Objectives
On successful completion of this manual you should be able to:
*
*
*
Understand about the IGBT and MOSFET characteristics

Describe the operation of output and transfer characteristics of IGBT and MOSFET.
Work with our module by yourself.
Features of VPET-202A
*
*
*
All necessary points terminated in the front panel.

The module can be used to study the operation of output and transfer characteristics of
both IGBT and MOSFET.
Provision for connecting ammeter and voltmeter.
This manual describes the IGBT and MOSFET characteristics.
[2]
VPET 202A
Chapter - 2
About Our Trainer
[3]

2.1
Pictorial View
2.2
Specification
1.
2.
3.
Power Input
:
Input power for switch SW1 :
Input power for switch SW2 :
VPET 202A
230V AC, 50Hz.

12V DC
30V DC
[4]

2.3
VPET 202A
FRONT PANEL DIAGRAM
[5]

2.4
VPET 202A
FRONT PANEL DESCRIPTION
POT 1
To vary Gate-Source voltage for MOSFET & Gate-Emitter voltage for

IGBT from min to max value.
POT 2
To vary Drain-Source voltage for MOSFET & Collector-Emitter

voltage for IGBT from min to max value.
P1,P2
Terminations for Gate Input DC voltage.
P3,P4
Terminations for Drain / Collector Input DC voltage.
P4,P5
Terminals to connect Gate-Source / Gate-Emitter to the DC supply.
P12,P13
Terminals to connect Drain- Source / Collector-Emitter to the DC

supply.
P6,P7
Terminals to connect Gate voltage measuring Voltmeter.
P8,P11
Terminals to connect Drain current / Collector current measuring

Ammeter
P9,P10
Terminals to connect Drain voltage / Collector voltage measuring

Voltmeter.
SW1
POT 1 power supply turn ON switch
SW2
POT 2 power supply turn ON switch
POWER ON -
Trainer power supply turn ON switch.
[6]

2.5
VPET 202A
PRECAUTIONS
Don't
i)
Dont short P1 and P2.
ii)
Dont short P14 and P15.
iii)
Don't Inter change Device terminal whenever doing the experiment.
iv)
Don't use Ammeter mode of multimeter operation for voltage measurement and
viceversa.
v)
Don't Interchange Ammeter, Volmeter terminal
Do's
i)
Ensure input power supply +30V, +30V DC.
ii)
Ensure Devices are in good working condition, for that follow Device testing
procedure.
iii)
Ensure the potentiometer's are working condition.
iv)
Ensure the fuse is good condition.
[7]
VPET 202A
Chapter - 3
Theoretical Concept
[8]
VPET 202A
3.1 POWER MOSFET

A metal - oxide semiconductor field-effect transistor (MOSFET) is a recent device developed
by combining the areas of field-effect concept and MOS technology.
A power MOSFET has three terminals called drain, source and gate. The circuit symbol of
power MOSFETis as shown below. Here arrow indicates the direction of electron flow. A
power MOSFET is a unipolar device.
Symbol of MOSFET
MOSFET Static Characteristics
The static characteristics of power MOSFET are now described briefly. The basic circuit
diagram for n-channel power MOSFET is shown below, where voltages and currents are as
indicated.
Circuit diagram of MOSFET
ID
LOAD
RD
+
D
VDD
VDS
G
S
VG
+
-
VGS
[9]

i.
VPET 202A
Transfer Characteristics
This characteristics shows the variation of drain current ID as a function of gate source VGS.
Figure shows typical transfer characteristics for n-channel power MOSFET. It is seen that
there is threshold voltage VGST below which the device is off. The magnitude of VGST is the
order of 2 to 3 V.
D
VGST
10
Transfer characteristics of MOSFET

ii.
Output Characteristics
Power MOSFET output characteristics shown in Figure indicate the variation of drain current
ID as a function drain - source voltage VDS as a parameter. For low values of VDS , the graph
between ID - VDS is almost linear. ; this indicates a constant value of on - resistance RDS =
VDS / ID . For given VGS, if VDS is increased, output characteristics is relatively flat indicating
that drain current is nearly constant.
VGS>VGS0 .............VGS1
Linear Region
VGS7
VGS6
VGS5
VGS4
VGS3
VGS2
VGS1
DRAIN SOURCE VOLTAGE (V )

DS
Output characteristics of MOSFET
[ 10 ]
VPET 202A
3.2 INSULATED GATE BIPOLAR TRANSISTOR (IGBT)

IGBT is a new development in the area of power MOSFET technology. This device
combines into it the advantage of both MOSFET and BJT. So an IGBT has high input
impedance like a MOSFET and low-on-state power loss as in a BJT. Further, IGBT is free
from second breakdown problem present in BJT. IGBT is also known as metal-oxide
insulated gate transistor conductively - modulated field effect transistor (COMFET) or gain modulated FET (GEMFET). It was also initially called insulated gate transistor (IGT).
IGBT Characteristics
The circuit of Fig shows the various parameters pertaining to IGBT characteristics. Static V I or output characteristics of an IGBT (n-channel type) show the plot of collector current IC
versus collector emitter voltage VCE for various values of gate- emitter voltages. These
characteristics are shown in Fig. In the forward direction, the shape of the output
characteristics is similar to that of BJT. But here the controlling parameter is gate-emitter
voltage VGE because IGBT is a voltage controlled device.
Ic
C
Rs
+
V CC
+
E
VG
R GE
V GE
V CE
RE
-
Circuit diagram of IGBT

The transfer characteristic of an IGBT is a plot of collector current IC versus gate-emitter
voltage VGE as shown in Fig. This characteristic is identical to that of power MOSFET.
When VGE is less than the threshold voltage VGET, IGBT is in the off-state.
[ 11 ]
VPET 202A
Ic
(A)
VGE
VGET
Transfer characteristics of IGBT

VGE4> VGE5 etc..
Ic
(A)
VGE5
VGE4
VGE3
VGE2
VGE1
V
RM
0
VCE
Output Characteristics of IGBT

When the device is off, junction J2 blocks forward voltage and in case reverse voltage
appears across collector and emitter, junction J1 blocks it.
[ 12 ]
VPET 202A
Chapter - 4
Experimental Section
[ 13 ]

EXPERIMENT - 1
VPET 202A
OUTPUT CHARACTERISTICS OF IGBT
AIM
To study the output characteristics of IGBT by using VPET-202A module.
EQUIPMENT REQUIRED
1.
2.
3.
4.
VPET - 202A module.

Voltmeter (0-30V)
Ammeter (0-200mA)
Patch chords
CONNECTION PROCEDURE
1.
Connect the banana connectors P1 to P4, P2 to P5, P12 to P14 and P13 to P15.
2.
Ammeter is connected across the banana connector P8 and P11.
3.
Voltmeter(VGE)is connected across the banana connector P6 and P7.
4.
Voltmeter (VCE) is connected across the banana connector P9 and P10.
5.
Connect the Connector P17 to P6.
6.
7.
EXPERIMENT PROCEDURE
1.
Verify the connection as per the connection procedure.
2.
Switch ON the power supply.
3.
Switch ON the power ON/OFF switch.
4.
Switch ON the switch SW1 and SW2.
5.
Set the Gate-Emitter (VGE) voltage at particular voltage by varying POT1.
6.
Smoothly vary the (POT2) Collector -Emitter (VCE) voltage till the IGBT get turn
on and note down the voltmeter (VCE) and Ammeter (IC) values in the table 1.
[ 14 ]
VPET 202A
7.
Further increase the collector-Emitter (VCE) voltage and note down the readings VCE
and IC in the table 1.
8.
Note the Collector current (Ic) for different values of Gate-Emitter voltage (VGE) in
the table1.
9.
Note down the pinch-off voltage, from the graph sheet.
TABLE:1
S.No
VGE =
VCE
(V)
V
IC(mA)
Note: Voltage and Current value depends upon temperature.

MODEL GRAPH
VGE4> V
GE5 etc..
Ic
(A)
VGE5
V
GE4
VGE3
VGE2
V
GE1
V
RM
0
VCE
[ 15 ]
VPET 202A
CONNECTION DIAGRAM FOR IGBT
RESULT
Thus the output characteristics of IGBT was studied and the graph was plotted.
[ 16 ]
VPET 202A
EXPERIMENT - 2 TRANSFER CHARACTERISTICS OF IGBT

AIM
To Study the Transfer characteristics of IGBT by using VPET-202A Module.
EQUIPMENT REQUIRED
1.
2.
3.
4.
VPET-202A Module.
Voltmeter (0-30V) .
Ammeter (0-200 mA)
Patch chords
PROCEDURE
1.
2.
3.
Voltmeter(VGE)is connected across the banana connector P6 and P7.
4.
Voltmeter (VCE) is connected across the banana connector P9 AND P10.
5.
6.
7.
1.
2.
3.
4.
5.
Keep the Collector-Emitter (VCE) voltage at particular voltage by varying POT2
6.
Smoothly vary the (POT1) Gate-Emitter voltage (VGE) till the IGBT gets turn on and
note down voltmeter (VGE) and Ammeter (IC) values in the table 2.
7.
Note down the Collector Current (IC) for different values of Collector-Emitter voltage
(VCE) in the table2.
[ 17 ]
VPET 202A
TABLE:2
S.No
VCE =
VGE(V)
Ic
mA
MODEL GRAPH
Ic
(A)
VGET
VGE
[ 18 ]
VPET 202A
CONNECTION DIAGRAM
RESULT
Thus the transfer characteristics of IGBT was studied and the graph was plotted.
[ 19 ]

EXPERIMENT - 3
VPET 202A
OUTPUT CHARACTERISTICS OF MOSFET
AIM
To study the output characteristics of MOSFET by using VPET-202A module.
EQUIPMENT REQUIRED
1.
2.
3.
4.
VPET - 202A module.

Voltmeter (0-30V).
Ammeter (0-200 mA)
Patch chords
1.
2.
3.
Voltmeter(VGS) is connected across the banana connector P6 and P7.
4.
Voltmeter (VDS) is connected across the banana connector P9 and P10.
5.
6.
7.
1.
2.
3.
4.
5.
Set the Gate-Source (VGS) voltage at particular value by varying POT1.
6.
Smoothly vary the (POT2), Drain-Source (VDS) voltage till the MOSFET gets turn
on and note down the voltmeter (VDS) and Ammeter (ID) values in the table 3.
7.
Further increase the drain-source (VDS) voltage and note down the readings VDS and
ID in the table 3.
8.
[ 20 ]
VPET 202A
TABLE:3
S.No
VGS =
VDS
(V)
V
ID(mA)
Note: Voltage and Current values depends upon temperature

MODEL GRAPH
DRAIN CURRENT (ID )
VGS>VGS0.............VGS1
Linear Region
VGS7
VGS6
VGS5
VGS4
VGS3
VGS2
VGS1
DRAIN SOURCE VOLTAGE (V )

DS
Output characteristics of MOSFET
[ 21 ]
VPET 202A
CONNECTION DIAGRAM
RESULT
Thus the output characteristics of MOSFET was studied and the graph was plotted.
[ 22 ]
VPET 202A
EXPERIMENT - 4 TRANSFER CHARACTERISTICS OF MOSFET

AIM
To Study the Transfer characteristics of MOSFET by using VPET-202A Module.
EQUIPMENT REQUIRED
1.
2.
3.
4.
VPET-202A Module.
Voltmeter (0-30 V)
Ammeter (0-200 mA)
Patch chords
1.
2.
3.
Voltmeter(VGS) is connected across the banana connector P6 and P7.
4.
Voltmeter (VDS) is connected across the banana connector P9 and P10.
5.
6.
7.
1.
2.
3.
4.
5.
Set the Gate-Source (VGS) voltage at particular value by varying POT2.
6.
Smoothly vary the (POT1), Drain-Source (VDS) voltage till the MOSFET gets turn
on and note down the voltmeter (VDS) and Ammeter (ID) values in the table 3.
7.
Further increase the drain-source (VDS) voltage and note down the readings VDS and
ID in the table 3.
8.
[ 23 ]
VPET 202A
TABLE:4
S.No
VD S =
VGS(V)
ID
mA
MODEL GRAPH
D
V GST
10
Transfer characteristics of MOSFET
[ 24 ]
VPET 202A
CONNECTION DIAGRAM
RESULT
Thus the transfer characteristics of MOSFET was studied and the graph was plotted.
[ 25 ]

4.3
1.
VPET 202A
SERVICE TIPS
Follow the Device testing procedure to checkout the Device working condition.
FOR IGBT
i)
ii)
iii)
iv)
v)
Made multimeter as Diode mode of operation.

Connect multimeter +ve terminal to Emitter Terminal of IGBT
Connect Multimeter -ve terminal to Collector Terminal of IGBT
Now multimeter will show the Diode internal Resistance.
Remaining Any of two combination will show open value.
FOR MOSFET
D
i)
ii)
iii)
iv)
v)
Made multimeter as Diode mode of operation.

Connect multimeter +ve terminal to source terminal of MOSFET
Connect Multimeter -ve terminal to Drain terminal of MOSFET
Now multimeter will show the Diode internal Resistance.
Remaining Any of two combination will show open value.
2.
Check out the power supply voltage if it is not multi o/p power supply may be fault.
3.
Check out continuity of potentiometer using multimeter. If it is not potentiometer

may be fault.
[ 26 ]

Igbt&amp; Mosfet

Caricato da

Informazioni sul documento

Copyright

Formati disponibili

Condividi questo documento

Condividi o incorpora il documento

Opzioni di condivisione

Hai trovato utile questo documento?

Questo contenuto è inappropriato?

Copyright:

Formati disponibili

Igbt&amp; Mosfet

Caricato da

Copyright:

Formati disponibili

IGBT & MOSFET CHARACTERISTICS

Technical Clarification /Suggestion :

ABOUT OUT TRAINER

OUTPUT CHARACTERISTICS OF IGBT

IGBT & MOSFET CHARACTERISTICS STUDY TRAINER

Vi Microsystems Pvt. Ltd.,

IGBT & MOSFET CHARACTERISTICS STUDY TRAINER

Understand about the IGBT and MOSFET characteristics

All necessary points terminated in the front panel.

This manual describes the IGBT and MOSFET characteristics.

Vi Microsystems Pvt. Ltd.,

IGBT & MOSFET CHARACTERISTICS STUDY TRAINER

About Our Trainer

Vi Microsystems Pvt. Ltd.,

IGBT & MOSFET CHARACTERISTICS STUDY TRAINER

Vi Microsystems Pvt. Ltd.,

230V AC, 50Hz.

IGBT & MOSFET CHARACTERISTICS STUDY TRAINER

FRONT PANEL DIAGRAM

Vi Microsystems Pvt. Ltd.,

IGBT & MOSFET CHARACTERISTICS STUDY TRAINER

FRONT PANEL DESCRIPTION

To vary Gate-Source voltage for MOSFET & Gate-Emitter voltage for

To vary Drain-Source voltage for MOSFET & Collector-Emitter

Terminations for Gate Input DC voltage.

Terminations for Drain / Collector Input DC voltage.

Terminals to connect Gate-Source / Gate-Emitter to the DC supply.

Terminals to connect Drain- Source / Collector-Emitter to the DC

Terminals to connect Gate voltage measuring Voltmeter.

Terminals to connect Drain current / Collector current measuring

Terminals to connect Drain voltage / Collector voltage measuring

POT 1 power supply turn ON switch

POT 2 power supply turn ON switch

Trainer power supply turn ON switch.

Vi Microsystems Pvt. Ltd.,

IGBT & MOSFET CHARACTERISTICS STUDY TRAINER

Dont short P1 and P2.

Dont short P14 and P15.

Don't Inter change Device terminal whenever doing the experiment.

Don't Interchange Ammeter, Volmeter terminal

Ensure input power supply +30V, +30V DC.

Ensure the potentiometer's are working condition.

Ensure the fuse is good condition.

Vi Microsystems Pvt. Ltd.,

IGBT & MOSFET CHARACTERISTICS STUDY TRAINER

Vi Microsystems Pvt. Ltd.,

IGBT & MOSFET CHARACTERISTICS STUDY TRAINER

3.1 POWER MOSFET

Vi Microsystems Pvt. Ltd.,

IGBT & MOSFET CHARACTERISTICS STUDY TRAINER

Transfer characteristics of MOSFET

DRAIN SOURCE VOLTAGE (V )

Output characteristics of MOSFET

Vi Microsystems Pvt. Ltd.,

IGBT & MOSFET CHARACTERISTICS STUDY TRAINER

3.2 INSULATED GATE BIPOLAR TRANSISTOR (IGBT)

Circuit diagram of IGBT

Vi Microsystems Pvt. Ltd.,

IGBT & MOSFET CHARACTERISTICS STUDY TRAINER

Transfer characteristics of IGBT

Output Characteristics of IGBT

Vi Microsystems Pvt. Ltd.,

IGBT & MOSFET CHARACTERISTICS STUDY TRAINER

Vi Microsystems Pvt. Ltd.,

Igbt& Mosfet

Igbt& Mosfet