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2SK3569

2SK3569

TOSHIBA Field Effect Transistor

Silicon N Channel MOS Type (π-MOSVI)

2SK3569

Switching Regulator Applications

Unit: mm

1: Gate 2: Drain 3: Source JEDEC ― JEITA SC-67 TOSHIBA 2-10U1B
1: Gate
2: Drain
3: Source
JEDEC
JEITA
SC-67
TOSHIBA
2-10U1B

Weight : 1.7 g (typ.)

Low drain-source ON resistance: R DS (ON) = 0.54Ω (typ.)

High forward transfer admittance: |Y fs | = 8.5S (typ.)

Low leakage current: I DSS = 100 μA (V DS = 600 V)

Enhancement-mode: V th = 2.0~4.0 V (V DS = 10 V, I D = 1 mA)

Maximum Ratings (Ta ==== 25°C)

Characteristics

   

Symbol

 

Rating

Unit

Drain-source voltage

 

V

DSS

 

600

V

Drain-gate voltage (R GS = 20 k)

 

V

DGR

 

600

V

Gate-source voltage

 

V

GSS

 

±30

V

 

DC

(Note 1)

 

I

D

 

10

Drain current

Pulse (t = 1 ms) (Note 1)

 

I

DP

 

40

A

Drain power dissipation (Tc = 25°C)

 

P

D

 

45

W

Single pulse avalanche energy (Note 2)

 

E

AS

 

363

mJ

Avalanche current

 

I

AR

 

10

A

Repetitive avalanche energy

(Note 3)

 

E

AR

 

4.5

mJ

Channel temperature

 

T

ch

 

150

°C

Storage temperature range

   

T

stg

 

-55~150

°C

Characteristics

   

Symbol

Max

Unit

Thermal resistance, channel to case

   

R th (ch-c)

2.78

°C/W

Thermal resistance, channel to ambient

 

R th (ch-a)

62.5

°C/W

Thermal Characteristics

2 3
2
3

Note 1:

Please use devices on conditions that the channel temperature is below 150°C.

Note 2:

V DD = 90 V, T ch = 25°C(initial), L = 6.36 mH, I AR = 10 A, R G = 25

1

Note 3:

Repetitive rating: Pulse width limited by maximum channel temperature

This transistor is an electrostatic sensitive device. Please handle with caution.

2SK3569

2SK3569

Electrical Characteristics (Ta ==== 25°C)

Characteristics

   

Symbol

   

Test Condition

 

Min

Typ.

Max

Unit

Gate leakage current

   

I

GSS

 

V GS = ±25 V, V DS = 0 V

 

±10

µA

Gate-source breakdown voltage

 

V

(BR) GSS

I G = ±10 µA, V DS = 0 V

 

±30

V

Drain cut-off current

 

I

DSS

 

V DS = 600 V, V GS = 0 V

 

100

µA

Drain-source breakdown voltage

 

V

(BR) DSS

I D = 10 mA, V GS = 0 V

 

600

V

Gate threshold voltage

   

V

th

 

V DS = 10 V, I D = 1 mA

 

2.0

4.0

V

Drain-source ON resistance

 

R DS (ON)

 

V GS = 10 V, I D = 5 A

 

0.54

0.75

Forward transfer admittance

   

Y fs

 

V DS = 10 V, I D = 5 A

 

0.7

8.5

S

Input capacitance

 

C

iss

   

1500

 

Reverse transfer capacitance

   

C

rss

 

V DS = 25 V, V GS = 0 V, f = 1 MHz

15

pF

Output capacitance

 

C

oss

 

180

 

Rise time

   

t

r

   

10 V

V OUT

22

 

V

GS

 
     
   

0 V

     

Turn-on time

 

t

on

I D = 5 A 50 Ω
I D = 5 A
50 Ω

R L = 40

50

Switching time

Fall time

 

t

f

36

ns

   

V

DD

200 V

Turn-off time

 

t

off

Duty < = 1%, t w = 10 µs

 

180

Total gate charge

 

Q

g

   

42

 

Gate-source charge

 

Q

gs

 

V DD

400 V, V GS = 10 V, I D = 10 A

23

nC

Gate-drain charge

 

Q

gd

 

19

Characteristics

   

Symbol

   

Test Condition

Min

Typ.

Max

Unit

Continuous drain reverse current

(Note 1)

 

I

DR

   

10

A

Pulse drain reverse current

(Note 1)

 

I

DRP

   

40

A

Forward voltage (diode)

   

V

DSF

 

I DR = 10 A, V GS = 0 V

 

1.7

V

Reverse recovery time

   

t

rr

 

I DR = 10 A, V GS = 0 V,

 

1300

ns

Reverse recovery charge

   

Q

rr

dI DR /dt = 100 A/µs

 

16

µC

Source-Drain Ratings and Characteristics (Ta ==== 25°C)

Marking K3569 ※
Marking
K3569

TYPE

Lot Number

2SK3569

2SK3569

I D – V DS I D – V DS 10 20 COMMON SOURCE Tc
I D – V DS
I D – V DS
10
20
COMMON SOURCE
Tc = 25°C
PULSE TEST
6
5.3
COMMON SOURCE
8
10
5.1
6
Tc = 25°C
PULSE TEST
8
16
5
10,8
5.5
4.8
5.25
6
12
5
4.6
4
8
4.75
4.4
4.2
4.5
2
4
V GS =
4 V
V GS =
4V
0
0
DRAIN CURRENT
I D
(A)
DRAIN CURRENT
I D
(A)

0

2

4

6

8

10

DRAIN-SOURCE VOLTAGE

V DS

(V)

I D – V GS

20 COMMON SOURCE V DS = 20 V 16 PULSE TEST 12 8 Tc =
20
COMMON SOURCE
V DS = 20
V
16
PULSE TEST
12
8
Tc
= −55°C
100
4
25
0 0
2
4
6
8
10
GATE-SOURCE VOLTAGE
(V)
V GS
DRAIN CURRENT
I D
(A)
DRAIN-SOURCE VOLTAGE
V DS
(V)

Y fs – I D

100 Tc = −55°C 10 25 100 1 COMMON SOURCE V DS = 20 V
100
Tc = −55°C
10
25
100
1
COMMON SOURCE
V DS = 20 V
PULSE
TEST
0.1
0.1
1
10
100
DRAIN CURRENT
I D
(A)
FORWARD TRANSFER
Y fs 
(S) ADMITTANCE
DRAIN-SOURCE ON RESISTANCE
R DS (ON)
(Ω)

0

10

20

30

40

50

DRAIN-SOURCE VOLTAGE (V) V DS V DS – V GS 10 COMMON SOURCE Tc =
DRAIN-SOURCE VOLTAGE
(V)
V DS
V DS – V GS
10
COMMON
SOURCE
Tc = 25 ℃
8
PULSE TEST
6
I D = 10 A
4
5
2
2.5
0
0 4
8
12
16
20
GATE-SOURCE VOLTAGE
(V)
V GS
R DS (ON) – I D 10 COMMON SOURCE Tc = 25°C PULSE TEST 1
R DS (ON) – I D
10
COMMON
SOURCE
Tc
= 25°C
PULSE TEST
1
V GS =
10 V、
15V
0.1
0.1
1
10
100
DRAIN CURRENT
I D
(A)
2SK3569

2SK3569

R DS (ON) – Tc

2.5 COMMON SOURCE PULSE TEST 2.0 I D = 12A 1.5 6 1.0 3 V
2.5
COMMON
SOURCE
PULSE TEST
2.0
I D = 12A
1.5
6
1.0
3
V GS = 10 V
0.5
0
−80
−40
0
40
80
120
160
CASE TEMPERATURE
Tc
(°C)
DRAIN-SOURCE ON RESISTANCE
R DS (ON)
( Ω)

CAPACITANCE – V DS

10000 C iss 1000 C oss 100 C rss COMMON SOURCE 10 V GS =
10000
C
iss
1000
C
oss
100
C
rss
COMMON
SOURCE
10
V
GS
= 0
V
f
= 1
MHz
Tc = 25°C
1
0.1 1
10
100
DRAIN-SOURCE VOLTAGE
(V)
V DS
CAPACITANCE
C
(pF)

P D – Tc

80 60 40 20 0 0 40 80 120 160 200 CASE TEMPERATURE Tc (°C)
80
60
40
20
0
0
40
80
120
160
200
CASE TEMPERATURE
Tc
(°C)
DRAIN POWER DISSIPATION
P D
(W)

I DR – V DS

100 COMMON SOURCE Tc = 25°C PULSE TEST 10 1 10 5 3 1 V
100
COMMON
SOURCE
Tc = 25°C
PULSE
TEST
10
1
10
5
3
1
V GS = 0, −1 V
0.1
0
−0.2
−0.4
−0.6
−0.8
−1.0
−1.2
DRAIN-SOURCE VOLTAGE
(V)
V DS
DRAIN REVERSE CURRENT
I DR

V th – Tc

5 4 3 2 COMMON SOURCE V DS = 10 V 1 I D =
5
4
3
2
COMMON
SOURCE
V DS = 10 V
1
I D = 1
mA
PULSE TEST
0
−80
−40
0
40
80
120
160
CASE TEMPERATURE
Tc
(°C)
GATE THRESHOLD VOLTAGE
V th
(V)

DYNAMIC INPUT / OUTPUT

CHARACTERISTICS

500 20 400 16 V DS V DD = 100 V 300 12 200 200
500
20
400
16
V
DS
V DD = 100 V
300
12
200
200
8
400
COMMON SOURCE
V
GS
I
D
= 3 A
100
4
Tc
= 25°C
PULSE
TEST
0
0
0
10
20
30
40
50
60
TOTAL GATE CHARGE
Q g
(nC)
DRAIN-SOURCE VOLTAGE
V DS
(V)
GATE-SOURCE VOLTAGE
V GS
(V)
2SK3569

2SK3569

r th – t w

10 1 Duty=0.5 Duty=0.5 0.2 0.1 0.1 0.05 P DM 0.02 t 0.01 T 0.01
10
1
Duty=0.5
Duty=0.5
0.2
0.1
0.1
0.05
P
DM
0.02
t
0.01
T
0.01
SINGLE PULSE
Duty = t/T
R th (ch-c) = 2.78°C/W
0.001
10μ
100μ
1m
10m
100m
1
10
PULSE WIDTH
t w
(s)
NORMALIZED TRANSIENT THERMAL
IMPEDANCE
r th (t) /R th (ch-c)

SAFE OPERATING AREA

100 I D max (PULSED) * 100 µs * I D max (CONTINUOUS) * 10
100
I D max (PULSED) *
100
µs *
I D max
(CONTINUOUS) *
10
1
ms *
DC
OPERATION
Tc
= 25°C
1
0.1
※ SINGLE NONREPETITIVE PULSE
Tc=25℃
CURVES
MUST
BE
DERATED
LINEARLY
WITH
INCREASE
IN
V DSS max
TEMPERATURE.
0.01
1 10
100
1000
DRAIN-SOURCE VOLTAGE
(V)
V DS
DRAIN CURRENT
I D
(A)

E AS – T ch

500 400 300 200 100 0 25 50 75 100 125 150 CHANNEL TEMPERATURE (INITIAL)
500
400
300
200
100
0 25
50
75
100
125
150
CHANNEL TEMPERATURE (INITIAL)
(°C)
T ch
B VDSS
15 V
I AR
−15 V
V
V DD
DS
TEST CIRCUIT
WAVE FORM
1
R G = 25 Ω
V DD = 90 V, L = 6.36mH
2
B VDSS
=
L
I
Ε AS
 
2
B VDSS
− V DD 
AVALANCHE
ENERGY
E AS
(mJ)
2SK3569

2SK3569

RESTRICTIONS ON PRODUCT USE

030619EAA

The information contained herein is subject to change without notice.

The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.

TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc

The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,

Unintended Usage of TOSHIBA products listed in this

medical instruments, all types of safety devices, etc document shall be made at the customer’s own risk.

TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations.

This datasheet has been download from:

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