RB215T-90

Diodes

Schottky barrier diode

RB215T-90
zDimensions (Unit : mm)

zApplications
General rectification
(Common cathode dual chip)

zStructure
4.50.3
0.1
2.80.2
0.1

5.00.2

8.00.2
12.00.2

zFeatures
1) Small power mold type.
(PMDU)
2) Low IR
3) High reliability

13.5MIN

1.2
1.3

zConstruction
Silicon epitaxial planar

15.00.4
0.2
8.0

10.00.3
0.1

0.8
(1) (2) (3)

0.70.1
0.05

2.60.5

ROHM : O220FN

Manufacture Date

zAbsolute maximum ratings (Ta=25C)

Parameter
Reverse voltage (repetitive)
Reverse voltage (DC)
Average rectified forward current(*1)
Forward current surge peak 60Hz1cyc(*1)
Junction temperature
Storage temperature

Limits
Symbol
VRM
90
VR
90
20
Io
IFSM
100
150
Tj
-40 to +150
Tstg
(*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=110

zElectrical characteristic (Ta=25C)

Parameter
Symbol

Forward characteristics
Reverse characteristics
Thermal impedance

VF
IR
jc

Min.
-

Typ.
-

Max.
0.75
400
1.75

Unit
V
A
/W

Unit
V
V
A
A

Conditions
IF=10A
VR=90V
junction to case

Rev.C

1/3

RB215T-90
Diodes
zElectrical characteristic curves

Ta=125
1
Ta=75
0.1

Ta=150

100000

Ta=125

Ta=-25
Ta=25

10000

Ta=75

Ta=25

100
10

Ta=-25
1

1000

100

10

0.1
0

100 200 300 400 500 600 700 800 900 1000

FORWARD VOLTAGEVF(mV)
VF-IF CHARACTERISTICS

10 20 30 40 50 60 70 80 90

300

700
690
AVE:692.7mV

680

30

1300
Ta=25
VR=90V
n=30pcs

250
200
150
100

AVE:46.0uA

50

1290
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)

REVERSE CURRENT:IR(uA)

Ta=25
IF=10A
n=30pcs

710

10
20
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS

REVERSE VOLTAGEVR(V)
VR-IR CHARACTERISTICS

720

Ta=25
f=1MHz
VR=0V
n=10pcs

1280
1270
1260
1250
1240

AVE:1257.3pF

1230
1220
1210
1200

670
VF DISPERSION MAP

Ct DISPERSION MAP

IR DISPERSION MAP

1000

1cyc

Ifsm

250
200

RESERVE RECOVERY TIME:trr(ns)

30

8.3ms

150
AVE:168.0A

100
50
0

25
20
AVE:21.6ns

Ta=25
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs

15
10
5

PEAK SURGE
FORWARD CURRENT:IFSM(A)

300

100

10

Ifsm
8.3ms 8.3ms
1cyc

1
IFSM DISPERSION MAP

1000
TRANSIENT
THAERMAL IMPEDANCE:Rth (/W)

PEAK SURGE
FORWARD CURRENT:IFSM(A)

100

10
1

10
TIME:t(s)
IFSM-t CHARACTERISTICS

100

50
IM=100mA

IF=10A

DC

40
10

100

NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS

100
Ifsm

10

trr DISPERSION MAP

1ms

time

Rth(j-a)

300us

Rth(j-c)

FORWARD POWER
DISSIPATION:Pf(W)

FORWARD VOLTAGE:VF(mV)

f=1MHz

1000

0.01

PEAK SURGE
FORWARD CURRENT:IFSM(A)

10000
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)

Ta=150

10

1000000
REVERSE CURRENT:IR(uA)

FORWARD CURRENT:IF(A)

100

D=1/2
30
Sin(180)

20
10

0.1
0.001

0
0.1

10

TIME:t(s)
Rth-t CHARACTERISTICS

1000

10

20
30
40
AVERAGE RECTIFIED
FORWARD CURRENTIo(A)
Io-Pf CHARACTERISTICS

Rev.C

50

2/3

RB215T-90
Diodes
60

60

20
DC
D=1/2
10

Sin(180)

0A
0V

50
40

D=1/2

DC

t
T

VR
D=t/T
VR=45V
Tj=150

30
20
10

Sin(180)

0
0

10

20

30

40

50

60

70

80

90

REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS

Io

0A
0V

Io
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)

AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)

REVERSE POWER
DISSIPATION:PR (W)

30

50
DC

40

D=1/2
T

VR
D=t/T
VR=45V
Tj=150

30
20
Sin(180)

10
0

25

50

75

100

125

AMBIENT TEMPERATURE:Ta()
Derating Curve(Io-Ta)

150

25

50

75

100

125

150

CASE TEMPARATURE:Tc()
Derating Curve(Io-Tc)

ELECTROSTATIC
DISCHARGE TEST ESD(KV)

30
No Break at 30kV

25
20
15
10
5
0

AVE:11.6kV
C=200pF
R=0

C=100pF
R=1.5k

ESD DISPERSION MAP

Rev.C

3/3

Appendix

Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.

The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
of reliability and the malfunction of which would directly endanger human life (such as medical
instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers
and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in
order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.

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Appendix1-Rev2.0